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1. 发明申请

WO2014150091A1 EPI-POLY ETCH STOP FOR OUT OF PLANE SPACER DEFINED ELECTRODE 审中-公开
标题翻译： EPI-POLY ETCH STOP FOR PLANE SPACER定义电极
公开(公告)号：WO2014150091A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/022186
申请日：2014-03-08
申请人： ROBERT BOSCH GMBH , GRAHAM, Andrew , YAMA, Gary , O'BRIEN, Gary
发明人： GRAHAM, Andrew , YAMA, Gary , O'BRIEN, Gary
IPC分类号： H01L21/28
CPC分类号： B81B3/0021 , B81B2201/0271 , B81B2203/04 , B81B2203/053 , B81C1/00095 , B81C1/00166 , B81C2201/0132 , B81C2201/014 , B81C2201/0177 , B81C2203/0136
摘要： In one embodiment, a method of forming an out-of-plane electrode includes forming an oxide layer above an upper surface of a device layer, etching an etch stop perimeter defining trench extending through the oxide layer, forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the deposited first material portion, and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.
摘要翻译：在一个实施例中，形成平面外电极的方法包括在器件层的上表面上形成氧化物层，蚀刻限定延伸穿过氧化物层的沟槽的蚀刻停止周界，在第一帽层部分上形成氧化物层的上表面，并且在蚀刻停止周界内限定沟槽，蚀刻延伸穿过第一盖层部分并停止在氧化物层处的第一电极周界，限定沟槽，在第一电极周界限定沟槽内沉积第一材料部分，沉积在沉积的第一材料部分上方的第二盖层部分，以及用蚀刻停止部分提供横向蚀刻停止物来释放一部分氧化物层的蒸气。

2. 发明申请

WO2014100648A1 THIN-FILM ENCAPSULATED INFRARED SENSOR 审中-公开
标题翻译：薄膜封装的红外传感器
公开(公告)号：WO2014100648A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/077052
申请日：2013-12-20
申请人： ROBERT BOSCH GmbH , PURKL, Fabian , YAMA, Gary , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , O'BRIEN, Gary
发明人： PURKL, Fabian , YAMA, Gary , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , O'BRIEN, Gary
IPC分类号： G01J5/04 , G01J5/20
CPC分类号： H01L31/0203 , G01J5/045 , G01J5/20 , H01L31/09 , H01L31/18
摘要： A method of fabricating a bolometer infrared sensor includes depositing a first sacrificial layer on a surface of a substrate over a sensor region, and forming an absorber structure for the infrared sensor on top of the first sacrificial layer. A second sacrificial layer is deposited on top of the absorber structure. An encapsulating thin film is then deposited on top of the second sacrificial layer. Vent holes are formed in the encapsulating thin film. The first and the second sacrificial layers are removed below the encapsulating thin film to release the absorber structure and form a cavity above the sensing region that extends down to the substrate in which the absorber structure is located via the vent holes. The vent holes are then closed in a vacuum environment to seal the absorber structure within the cavity.
摘要翻译：一种制造测辐射热计红外传感器的方法包括在传感器区域上的衬底表面上沉积第一牺牲层，以及在第一牺牲层的顶部上形成用于红外传感器的吸收体结构。第二牺牲层沉积在吸收体结构的顶部。然后将封装的薄膜沉积在第二牺牲层的顶部上。在封装薄膜中形成排气孔。在封装薄膜下方移除第一和第二牺牲层以释放吸收体结构，并在感测区域上方形成一个空腔，该腔体通过通气孔向下延伸到吸收体结构位于其中的衬底。然后在真空环境中关闭通气孔以密封空腔内的吸收体结构。

3. 发明申请

WO2014099915A1 RESISTIVE MEMS HUMIDITY SENSOR 审中-公开
标题翻译：电阻式MEMS湿度传感器
公开(公告)号：WO2014099915A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/075677
申请日：2013-12-17
申请人： ROBERT BOSCH GMBH , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , YAMA, Gary , O'BRIEN, Gary
发明人： FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , YAMA, Gary , O'BRIEN, Gary
IPC分类号： G01N27/12
CPC分类号： G01N27/121
摘要： A semiconductor device includes a substrate, an insulating film provided on a surface of the substrate, and a sensing film formed of a conductive material deposited on top of the insulating film. The sensing film defines at least one conductive path between a first position and a second position on the insulating film. A first circuit connection is electrically connected to the sensing film at the first position on the insulating layer, and a second circuit connection is electrically connected to the sensing film at the second position. A control circuit is operatively connected to the first circuit connection and the second circuit connection for measuring an electrical resistance of the sensing film. The sensing film has a thickness that enables a resistivity of the sensing film to be altered predictably in a manner that is dependent on ambient moisture content.
摘要翻译：半导体器件包括衬底，设置在衬底的表面上的绝缘膜和由沉积在绝缘膜的顶部上的导电材料形成的感测膜。感测膜在绝缘膜上的第一位置和第二位置之间限定至少一个导电路径。第一电路连接在绝缘层上的第一位置处电连接到感测膜，并且第二电路连接在第二位置电连接到感测膜。控制电路可操作地连接到第一电路连接和用于测量感测膜的电阻的第二电路连接。感测膜具有能够以取决于环境水分含量的方式预测地改变感测膜的电阻率的厚度。

4. 发明申请

WO2012142424A1 WAFER WITH RECESSED PLUG 审中-公开
标题翻译：带有接收插头的波形
公开(公告)号：WO2012142424A1
公开(公告)日：2012-10-18
申请号：PCT/US2012/033542
申请日：2012-04-13
申请人： ROBERT BOSCH GMBH , GRAHAM, Andrew, B. , YAMA, Gary , O'BRIEN, Gary
发明人： GRAHAM, Andrew, B. , YAMA, Gary , O'BRIEN, Gary
IPC分类号： B81C1/00 , H01L21/762
CPC分类号： B81B7/00 , B81B2203/0307 , B81C1/00126 , H01L21/76283
摘要： In one embodiment, a method of forming a plug includes providing a base layer, providing an intermediate oxide layer above an upper surface of the base layer, providing an upper layer above an upper surface of the intermediate oxide layer, etching a trench including a first trench portion extending through the upper layer, a second trench portion extending through the oxide layer, and a third trench portion extending into the base layer, depositing a first material portion within the third trench portion, depositing a second material portion within the second trench portion, and depositing a third material portion within the first trench portion.
摘要翻译：在一个实施例中，形成插头的方法包括提供基底层，在基底层的上表面上方提供中间氧化物层，在中间氧化物层的上表面上方提供上层，蚀刻包括第一延伸穿过上层的沟槽部分，延伸穿过氧化物层的第二沟槽部分和延伸到基层中的第三沟槽部分，在第三沟槽部分内沉积第一材料部分，在第二沟槽部分内沉积第二材料部分并且在第一沟槽部分内沉积第三材料部分。

5. 发明申请

WO2014150093A1 TRENCH BASED CAPACITIVE HUMIDITY SENSOR 审中-公开
标题翻译：基于TRENCH的电容式湿度传感器
公开(公告)号：WO2014150093A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/022205
申请日：2014-03-09
申请人： ROBERT BOSCH GMBH , O'BRIEN, Gary , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , YAMA, Gary
发明人： O'BRIEN, Gary , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , YAMA, Gary
IPC分类号： G01N27/22
CPC分类号： G01N27/223 , B81B7/0006 , B81B2201/0292 , G01N27/225
摘要： A trenched base capacitive humidity sensor includes a plurality of trenches formed in a conductive layer, such as polysilicon or metal, on a substrate. The trenches are arranged parallel to the each other and partition the conductive layer into a plurality of trenched silicon electrodes. At least two trenched silicon electrodes are configured to form a capacitive humidity sensor. The trenches that define the trenched silicon electrodes can be filled partially ( e.g. , sidewall coverage) or completely with polyimide (PI) or silicon nitride (SiN). A polyimide layer may also be provided on the conductive layer over the trenches and trenched electrodes. The trenches and the trenched silicon electrodes may have different widths to enable different sensor characteristics in the same structure.
摘要翻译：沟底基电容式湿度传感器包括在基板上形成在诸如多晶硅或金属的导电层中的多个沟槽。沟槽彼此平行配置，并将导电层分隔成多个沟槽硅电极。至少两个沟槽硅电极被配置成形成电容式湿度传感器。限定沟槽硅电极的沟槽可以部分地（例如，侧壁覆盖）填充或完全用聚酰亚胺（PI）或氮化硅（SiN）填充。也可以在沟槽和沟槽电极上的导电层上设置聚酰亚胺层。沟槽和沟槽硅电极可以具有不同的宽度，以实现相同结构中不同的传感器特性。

6. 发明申请

WO2012142400A1 METHOD OF FORMING MEMBRANES WITH MODIFIED STRESS CHARACTERISTICS 审中-公开
标题翻译：具有改性应力特征的膜的形成方法
公开(公告)号：WO2012142400A1
公开(公告)日：2012-10-18
申请号：PCT/US2012/033501
申请日：2012-04-13
申请人： ROBERT BOSCH GMBH , GRAHAM, Andrew, B. , YAMA, Gary , O'BRIEN, Gary
发明人： GRAHAM, Andrew, B. , YAMA, Gary , O'BRIEN, Gary
IPC分类号： B81B3/00 , B81C1/00 , G01L9/00
CPC分类号： B81B3/0072 , B81B2201/0264 , B81C1/00666 , G01L9/0042
摘要： A method of modifying stress characteristics of a membrane in one embodiment includes providing a membrane layer, determining a desired stress modification, and forming at least one trough in the membrane layer based upon the determined desired stress modification.
摘要翻译：在一个实施方案中，改进膜的应力特性的方法包括提供膜层，确定所需的应力改性，以及基于确定的所需应力改变在膜层中形成至少一个槽。

7. 发明申请

WO2012141854A1 MEMS PACKAGE OR SENSOR PACKAGE WITH INTRA-CAP ELECTRICAL VIA AND METHOD THEREOF 审中-公开
标题翻译：具有内部电气的MEMS封装或传感器封装及其方法
公开(公告)号：WO2012141854A1
公开(公告)日：2012-10-18
申请号：PCT/US2012/029862
申请日：2012-03-21
申请人： ROBERT BOSCH GMBH , GRAHAM, Andrew, B. , YAMA, Gary , O'BRIEN, Gary
发明人： GRAHAM, Andrew, B. , YAMA, Gary , O'BRIEN, Gary
IPC分类号： B81B7/00
CPC分类号： B81B7/007 , B81B2207/092 , B81B2207/095
摘要： A MEMS device structure including a lateral electrical via encased in a cap layer and a method for manufacturing the same. The MEMS device structure includes a cap layer positioned on a MEMS device layer. The cap layer covers a MEMS device and one or more MEMS device layer electrodes in the MEMS device layer. The cap layer includes at least one cap layer electrode accessible from the surface of the cap layer. An electrical via is encased in the cap layer extending across a lateral distance from the cap layer electrode to the one or more MEMS device layer electrodes. An isolating layer is positioned around the electrical via to electrically isolate the electrical via from the cap layer.
摘要翻译：包括封装在盖层中的横向电通路的MEMS器件结构及其制造方法。 MEMS器件结构包括位于MEMS器件层上的盖层。盖层覆盖MEMS器件和MEMS器件层中的一个或多个MEMS器件层电极。盖层包括可从盖层的表面接近的至少一个盖层电极。电通孔被封装在覆盖层中，该覆盖层跨越从帽层电极到一个或多个MEMS器件层电极的横向距离延伸。绝缘层位于电通孔周围，以将电通孔与盖层电隔离。

8. 发明申请

WO2014159946A1 MEMS DEVICE HAVING A GETTER 审中-公开
标题翻译：具有GETTER的MEMS器件
公开(公告)号：WO2014159946A1
公开(公告)日：2014-10-02
申请号：PCT/US2014/025498
申请日：2014-03-13
申请人： ROBERT BOSCH GMBH , SAMARAO, Ashwin , O'BRIEN, Gary , FEYH, Ando , YAMA, Gary , GRAHAM, Andrew , KIM, Bongsang , PURKL, Fabian
发明人： SAMARAO, Ashwin , O'BRIEN, Gary , FEYH, Ando , YAMA, Gary , GRAHAM, Andrew , KIM, Bongsang , PURKL, Fabian
IPC分类号： H01L23/12 , H01L21/322 , B81B7/02
CPC分类号： B81C1/00285 , B81C2201/0115 , B81C2203/0109 , B81C2203/0118 , B81C2203/035 , H01L21/3223 , H01L21/3225 , H01L23/28
摘要： A microelectromechanical system (MEMS) device includes a high density getter. The high density getter includes a silicon surface area formed by porosification or by the formation of trenches within a sealed cavity of the device. The silicon surface area includes a deposition of titanium or other gettering material to reduce the amount of gas present in the sealed chamber such that a low pressure chamber is formed. The high density getter is used in bolometers and gyroscopes but is not limited to those devices.
摘要翻译：微机电系统（MEMS）装置包括高密度吸气剂。高密度吸气剂包括通过孔化形成的硅表面积或通过在该装置的密封腔内形成沟槽。硅表面积包括钛或其它吸气材料的沉积物，以减少密封室中存在的气体的量，从而形成低压室。高密度吸气剂用于测辐射仪和陀螺仪，但不限于这些设备。

9. 发明申请

WO2014088976A1 STRUCTURED GAP FOR A MEMS PRESSURE SENSOR 审中-公开
标题翻译： MEMS压力传感器的结构差距
公开(公告)号：WO2014088976A1
公开(公告)日：2014-06-12
申请号：PCT/US2013/072694
申请日：2013-12-02
申请人： ROBERT BOSCH GMBH , GRAHAM, Andrew, B. , YAMA, Gary , O'BRIEN, Gary
发明人： GRAHAM, Andrew, B. , YAMA, Gary , O'BRIEN, Gary
IPC分类号： G01L9/00 , B81C1/00
CPC分类号： B81C1/00642 , B81B3/0021 , G01L9/0047 , G01L9/0073
摘要： A method of fabricating a pressure sensor (30) includes performing a chemical vapor deposition (CVD) process to deposit a first sacrificial layer having a first thickness onto a substrate (12). A portion of the first sacrificial layer is then removed down to the substrate to form a central region of bare silicon. One of a thermal oxidation process and an atomic layer deposition process is then performed to form a second sacrificial layer on the substrate having a second thickness in the central region that is less than the first thickness. A cap layer(14) is then deposited over the first and second sacrificial layers. The second sacrificial layer is removed from the central region, and the first and second sacrificial layers are removed from a perimeter region that at least partially surrounds the central region on the substrate to form a contiguous, structured gap between the cap layer and the substrate, the structured gap having a first width in the central region and a second width in the perimeter region with the second width being greater than the first width.
摘要翻译：制造压力传感器（30）的方法包括进行化学气相沉积（CVD）工艺以将具有第一厚度的第一牺牲层沉积到衬底（12）上。然后将第一牺牲层的一部分下移到衬底以形成裸硅的中心区域。然后执行热氧化工艺和原子层沉积工艺之一，以在衬底上形成第二牺牲层，其中心区域的第二厚度小于第一厚度。然后在第一和第二牺牲层上沉积覆盖层（14）。从中心区域去除第二牺牲层，并且从周边区域去除第一和第二牺牲层，周边区域至少部分地围绕衬底上的中心区域，以在盖层和衬底之间形成连续的，结构化的间隙，所述结构化间隙在所述中心区域具有第一宽度，并且所述周边区域中的第二宽度具有大于所述第一宽度的所述第二宽度。

10. 发明申请

WO2012142431A1 METHOD OF FORMING MEMBRANES WITH MODIFIED STRESS CHARACTERISTICS 审中-公开
标题翻译：改性应力特性成膜的方法
公开(公告)号：WO2012142431A1
公开(公告)日：2012-10-18
申请号：PCT/US2012/033553
申请日：2012-04-13
申请人： ROBERT BOSCH GMBH , GRAHAM, Andrew, B. , YAMA, Gary , O'BRIEN, Gary
发明人： GRAHAM, Andrew, B. , YAMA, Gary , O'BRIEN, Gary
IPC分类号： B81B3/00 , B81C1/00 , G01L9/00
CPC分类号： B81B3/0072 , B81B2201/0264 , B81C1/00666 , G01L9/0042
摘要： A method of modifying stress characteristics of a membrane in one embodiment includes providing a membrane layer, determining a desired stress modification, and forming at least one trough in the membrane layer based upon the determined desired stress modification.
摘要翻译：在一个实施例中，改变膜的应力特性的方法包括提供膜层，确定期望的应力修改，以及基于所确定的期望应力修改在膜层中形成至少一个槽。

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