专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2016100504A3 A MEMS GAS CHROMATOGRAPH AND METHOD OF FORMING A SEPARATOR COLUMN FOR A MEMS GAS CHROMATOGRAPH 审中-公开
公开(公告)号：WO2016100504A3
公开(公告)日：2016-06-23
申请号：PCT/US2015/066076
申请日：2015-12-16
申请人： ROBERT BOSCH GMBH , FEYN, Ando , O'BRIEN, Gary , KIM, Bongsang , STEHLE, Jochen
发明人： FEYN, Ando , O'BRIEN, Gary , KIM, Bongsang , STEHLE, Jochen
IPC分类号： G01N30/60 , B81B7/00 , B81C1/00
摘要： A micro gas chromatograph includes one or more separator columns formed within a device layer. The separator columns have small channel cross sections and long channel lengths with atomic-smooth channel sidewalls enabling a high channel packaging density, multiple channels positioned on top of each other, and channel segments that are thermally decoupled from the substrates. The micro gas-chromatograph also enables electrostatic and thermal actuators to be positioned in close proximity to the separator columns such that the material passing through the columns is one or more of locally heated, locally cooled, and electrically biased.

2. 发明申请

WO2016057880A1 METHOD TO MODULATE THE SENSITIVITY OF A BOLOMETER VIA NEGATIVE INTERFERENCE 审中-公开
标题翻译：通过负面干扰来调节玻璃体的灵敏度的方法
公开(公告)号：WO2016057880A1
公开(公告)日：2016-04-14
申请号：PCT/US2015/054855
申请日：2015-10-09
申请人： ROBERT BOSCH GMBH , ROCZNIK, Thomas , PURKL, Fabian , O'BRIEN, Gary , FEYH, Ando , KIM, Bongsang , SAMARAO, Ashwin , YAMA, Gary
发明人： ROCZNIK, Thomas , PURKL, Fabian , O'BRIEN, Gary , FEYH, Ando , KIM, Bongsang , SAMARAO, Ashwin , YAMA, Gary
IPC分类号： G01J5/10 , G01J5/22 , G01J5/00
CPC分类号： G01J5/06 , G01J5/0809 , G01J5/0853 , G01J5/20 , G01J5/24 , G01J2005/066 , G01J2005/067
摘要： A semiconductor sensor system, in particular a bolometer, includes a substrate, an electrode supported by the substrate, an absorber spaced apart from the substrate, a voltage source, and a current source. The electrode can include a mirror, or the system may include a mirror separate from the electrode. Radiation absorption efficiency of the absorber is based on a minimum gap distance between the absorber and mirror. The current source applies a DC current across the absorber structure to produce a signal indicative of radiation absorbed by the absorber structure. The voltage source powers the electrode to produce a modulated electrostatic field acting on the absorber to modulate the minimum gap distance. The electrostatic field includes a DC component to adjust the absorption efficiency, and an AC component that cyclically drives the absorber to negatively interfere with noise in the signal.
摘要翻译：半导体传感器系统，特别是测辐射热计，包括基板，由基板支撑的电极，与基板间隔开的吸收体，电压源和电流源。电极可以包括反射镜，或者系统可以包括与电极分离的反射镜。吸收器的辐射吸收效率基于吸收器和反射镜之间的最小间隙距离。电流源通过吸收器结构施加直流电流以产生指示由吸收体结构吸收的辐射的信号。电压源为电极供电以产生作用在吸收器上的调制静电场，以调制最小间隙距离。静电场包括用于调节吸收效率的DC分量，以及周期性地驱动吸收体负相干扰信号中的噪声的AC分量。

3. 发明申请

WO2014159946A1 MEMS DEVICE HAVING A GETTER 审中-公开
标题翻译：具有GETTER的MEMS器件
公开(公告)号：WO2014159946A1
公开(公告)日：2014-10-02
申请号：PCT/US2014/025498
申请日：2014-03-13
申请人： ROBERT BOSCH GMBH , SAMARAO, Ashwin , O'BRIEN, Gary , FEYH, Ando , YAMA, Gary , GRAHAM, Andrew , KIM, Bongsang , PURKL, Fabian
发明人： SAMARAO, Ashwin , O'BRIEN, Gary , FEYH, Ando , YAMA, Gary , GRAHAM, Andrew , KIM, Bongsang , PURKL, Fabian
IPC分类号： H01L23/12 , H01L21/322 , B81B7/02
CPC分类号： B81C1/00285 , B81C2201/0115 , B81C2203/0109 , B81C2203/0118 , B81C2203/035 , H01L21/3223 , H01L21/3225 , H01L23/28
摘要： A microelectromechanical system (MEMS) device includes a high density getter. The high density getter includes a silicon surface area formed by porosification or by the formation of trenches within a sealed cavity of the device. The silicon surface area includes a deposition of titanium or other gettering material to reduce the amount of gas present in the sealed chamber such that a low pressure chamber is formed. The high density getter is used in bolometers and gyroscopes but is not limited to those devices.
摘要翻译：微机电系统（MEMS）装置包括高密度吸气剂。高密度吸气剂包括通过孔化形成的硅表面积或通过在该装置的密封腔内形成沟槽。硅表面积包括钛或其它吸气材料的沉积物，以减少密封室中存在的气体的量，从而形成低压室。高密度吸气剂用于测辐射仪和陀螺仪，但不限于这些设备。

4. 发明申请

WO2016094693A1 RESISTIVE SWITCHING FOR MEMS DEVICES 审中-公开
标题翻译： MEMS器件的电阻开关
公开(公告)号：WO2016094693A1
公开(公告)日：2016-06-16
申请号：PCT/US2015/065050
申请日：2015-12-10
申请人： ROBERT BOSCH GMBH , SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando , PURKL, Fabian , YAMA, Gary
发明人： SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando , PURKL, Fabian , YAMA, Gary
IPC分类号： G01J5/20 , H01L31/101
CPC分类号： G01J5/20 , G01J5/024 , G01J5/0853 , G01J2005/202 , H01L27/14669 , H01L27/2472 , H01L31/02019 , H01L31/0224 , H01L31/11 , H01L45/1616
摘要： A MEMS device includes a bolometer attached to a silicon wafer by a base portion of at least one anchor structure. The base portion comprises a layer stack having a metal- insulator-metal (MIM) configuration such that the base portion acts as a resistive switch such that, when the first DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state, and, when the second DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state.
摘要翻译： MEMS装置包括通过至少一个锚结构的基部附接到硅晶片的测辐射热计。基底部分包括具有金属 - 绝缘体 - 金属（MIM）构造的层堆叠，使得基底部分起电阻性开关的作用，使得当第一DC电压施加到图案化的导电层时，基底部分从高电阻状态变为低电阻状态，并且当将第二DC电压施加到图案化导电层时，基极部分从高电阻状态转变为低电阻状态。

5. 发明申请

WO2014150091A1 EPI-POLY ETCH STOP FOR OUT OF PLANE SPACER DEFINED ELECTRODE 审中-公开
标题翻译： EPI-POLY ETCH STOP FOR PLANE SPACER定义电极
公开(公告)号：WO2014150091A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/022186
申请日：2014-03-08
申请人： ROBERT BOSCH GMBH , GRAHAM, Andrew , YAMA, Gary , O'BRIEN, Gary
发明人： GRAHAM, Andrew , YAMA, Gary , O'BRIEN, Gary
IPC分类号： H01L21/28
CPC分类号： B81B3/0021 , B81B2201/0271 , B81B2203/04 , B81B2203/053 , B81C1/00095 , B81C1/00166 , B81C2201/0132 , B81C2201/014 , B81C2201/0177 , B81C2203/0136
摘要： In one embodiment, a method of forming an out-of-plane electrode includes forming an oxide layer above an upper surface of a device layer, etching an etch stop perimeter defining trench extending through the oxide layer, forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the deposited first material portion, and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.
摘要翻译：在一个实施例中，形成平面外电极的方法包括在器件层的上表面上形成氧化物层，蚀刻限定延伸穿过氧化物层的沟槽的蚀刻停止周界，在第一帽层部分上形成氧化物层的上表面，并且在蚀刻停止周界内限定沟槽，蚀刻延伸穿过第一盖层部分并停止在氧化物层处的第一电极周界，限定沟槽，在第一电极周界限定沟槽内沉积第一材料部分，沉积在沉积的第一材料部分上方的第二盖层部分，以及用蚀刻停止部分提供横向蚀刻停止物来释放一部分氧化物层的蒸气。

6. 发明申请

WO2014100611A1 METHOD OF MANUFACTURING A SENSOR DEVICE HAVING A POROUS THIN-FILM METAL ELECTRODE 审中-公开
标题翻译：制造具有多孔薄膜金属电极的传感器器件的方法
公开(公告)号：WO2014100611A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/076976
申请日：2013-12-20
申请人： ROBERT BOSCH GMBH , FEYH, Ando , O'BRIEN, Gary , PURKL, Fabian , YAMA, Gary , SAMARAO, Ashwin
发明人： FEYH, Ando , O'BRIEN, Gary , PURKL, Fabian , YAMA, Gary , SAMARAO, Ashwin
IPC分类号： G01N27/414
CPC分类号： H01L21/28008 , G01N27/4146 , H01L29/4238
摘要： A method of fabricating a semiconductor sensor device includes providing a substrate, supporting a source region and a drain region with the substrate, forming an insulator layer above the source region and the drain region, and forming a porous metallic gate region above the insulator layer using plasma enhanced atomic layer deposition (PEALD).
摘要翻译：一种半导体传感器装置的制造方法，其特征在于，包括：在所述基板上设置支撑源极区域和漏极区域的基板，在所述源极区域和所述漏极区域的上方形成绝缘体层，在所述绝缘体层的上方形成多孔金属栅极区域，使用等离子体增强原子层沉积（PEALD）。

7. 发明申请

WO2014036250A2 SERPENTINE IR SENSOR 审中-公开
标题翻译： SERPENTINE红外传感器
公开(公告)号：WO2014036250A2
公开(公告)日：2014-03-06
申请号：PCT/US2013/057280
申请日：2013-08-29
申请人： ROBERT BOSCH GMBH , PURKLY, Fabian , YAMA, Gary , FEYH, Ando , O'BRIEN, Gary
发明人： PURKLY, Fabian , YAMA, Gary , FEYH, Ando , O'BRIEN, Gary
IPC分类号： G01J5/04 , G01J5/02 , G01J5/06 , G01J5/20 , G01J5/08
CPC分类号： H01L31/0232 , G01J5/0225 , G01J5/023 , G01J5/024 , G01J5/045 , G01J5/046 , G01J5/06 , G01J5/0809 , G01J5/0853 , G01J5/20 , H01L31/09
摘要： In one embodiment, a MEMS sensor includes a mirror and an absorber spaced apart from the mirror, the absorber including a plurality of spaced apart conductive legs defining a tortuous path across an area directly above the mirror.
摘要翻译：在一个实施例中，MEMS传感器包括反射镜和与反射镜隔开的吸收器，吸收器包括多个间隔开的导电腿，所述导电腿限定穿过反射镜正上方区域的曲折路径。 / p>

8. 发明申请

WO2015048424A1 TITANIUM NITRIDE FOR MEMS BOLOMETERS 审中-公开
标题翻译：用于MEMS BOLOMETER的硝酸钛
公开(公告)号：WO2015048424A1
公开(公告)日：2015-04-02
申请号：PCT/US2014/057689
申请日：2014-09-26
申请人： ROBERT BOSCH GMBH , SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando , PURKL, Fabian , YAMA, Gary
发明人： SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando , PURKL, Fabian , YAMA, Gary
IPC分类号： H01L27/04 , B81B7/02
CPC分类号： G01J5/20 , G01J5/024
摘要： A method for fabricating a semiconductor device includes patterning a sacrificial layer on a substrate to define a bolometer, with trenches being formed in the sacrificial layer to define anchors for the bolometer, the trenches extending through the sacrificial layer and exposing conductive elements at the bottom of the trenches. A thin titanium nitride layer is then deposited on the sacrificial layer and within the trenches. The titanium nitride layer is configured to form a structural support for the bolometer and to provide an electrical connection to the conductive elements on the substrate.
摘要翻译：一种用于制造半导体器件的方法包括在衬底上图案化牺牲层以限定测辐射热计，其中在牺牲层中形成沟槽以限定测辐射热计的定位器，所述沟槽延伸穿过牺牲层并暴露在底部的导电元件壕沟然后在牺牲层上和沟槽内沉积薄的氮化钛层。氮化钛层被配置成形成用于测辐射热计的结构支撑件，并提供与衬底上的导电元件的电连接。

9. 发明申请

WO2014100648A1 THIN-FILM ENCAPSULATED INFRARED SENSOR 审中-公开
标题翻译：薄膜封装的红外传感器
公开(公告)号：WO2014100648A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/077052
申请日：2013-12-20
申请人： ROBERT BOSCH GmbH , PURKL, Fabian , YAMA, Gary , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , O'BRIEN, Gary
发明人： PURKL, Fabian , YAMA, Gary , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , O'BRIEN, Gary
IPC分类号： G01J5/04 , G01J5/20
CPC分类号： H01L31/0203 , G01J5/045 , G01J5/20 , H01L31/09 , H01L31/18
摘要： A method of fabricating a bolometer infrared sensor includes depositing a first sacrificial layer on a surface of a substrate over a sensor region, and forming an absorber structure for the infrared sensor on top of the first sacrificial layer. A second sacrificial layer is deposited on top of the absorber structure. An encapsulating thin film is then deposited on top of the second sacrificial layer. Vent holes are formed in the encapsulating thin film. The first and the second sacrificial layers are removed below the encapsulating thin film to release the absorber structure and form a cavity above the sensing region that extends down to the substrate in which the absorber structure is located via the vent holes. The vent holes are then closed in a vacuum environment to seal the absorber structure within the cavity.
摘要翻译：一种制造测辐射热计红外传感器的方法包括在传感器区域上的衬底表面上沉积第一牺牲层，以及在第一牺牲层的顶部上形成用于红外传感器的吸收体结构。第二牺牲层沉积在吸收体结构的顶部。然后将封装的薄膜沉积在第二牺牲层的顶部上。在封装薄膜中形成排气孔。在封装薄膜下方移除第一和第二牺牲层以释放吸收体结构，并在感测区域上方形成一个空腔，该腔体通过通气孔向下延伸到吸收体结构位于其中的衬底。然后在真空环境中关闭通气孔以密封空腔内的吸收体结构。

10. 发明申请

WO2014099915A1 RESISTIVE MEMS HUMIDITY SENSOR 审中-公开
标题翻译：电阻式MEMS湿度传感器
公开(公告)号：WO2014099915A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/075677
申请日：2013-12-17
申请人： ROBERT BOSCH GMBH , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , YAMA, Gary , O'BRIEN, Gary
发明人： FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , YAMA, Gary , O'BRIEN, Gary
IPC分类号： G01N27/12
CPC分类号： G01N27/121
摘要： A semiconductor device includes a substrate, an insulating film provided on a surface of the substrate, and a sensing film formed of a conductive material deposited on top of the insulating film. The sensing film defines at least one conductive path between a first position and a second position on the insulating film. A first circuit connection is electrically connected to the sensing film at the first position on the insulating layer, and a second circuit connection is electrically connected to the sensing film at the second position. A control circuit is operatively connected to the first circuit connection and the second circuit connection for measuring an electrical resistance of the sensing film. The sensing film has a thickness that enables a resistivity of the sensing film to be altered predictably in a manner that is dependent on ambient moisture content.
摘要翻译：半导体器件包括衬底，设置在衬底的表面上的绝缘膜和由沉积在绝缘膜的顶部上的导电材料形成的感测膜。感测膜在绝缘膜上的第一位置和第二位置之间限定至少一个导电路径。第一电路连接在绝缘层上的第一位置处电连接到感测膜，并且第二电路连接在第二位置电连接到感测膜。控制电路可操作地连接到第一电路连接和用于测量感测膜的电阻的第二电路连接。感测膜具有能够以取决于环境水分含量的方式预测地改变感测膜的电阻率的厚度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式