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1. 发明申请

WO2010069282A3 LUMINOUS MEANS AND PROJECTOR COMPRISING AT LEAST ONE LUMINOUS MEANS OF THIS TYPE 审中-公开
标题翻译：灯和投影仪至少有一个这样的灯
公开(公告)号：WO2010069282A3
公开(公告)日：2010-11-11
申请号：PCT/DE2009001448
申请日：2009-10-19
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , LELL ALFRED , TAUTZ SOENKE , STRAUSS UWE , BEHRINGER MARTIN RUDOLF , BRUENINGHOFF STEFANIE , DINI DIMITRI , EISERT DOMINIK , EICHLER CHRISTOPH
发明人： LELL ALFRED , TAUTZ SOENKE , STRAUSS UWE , BEHRINGER MARTIN RUDOLF , BRUENINGHOFF STEFANIE , DINI DIMITRI , EISERT DOMINIK , EICHLER CHRISTOPH
IPC分类号： H04N9/31
CPC分类号： H04N9/3161 , H01S5/005 , H01S5/02292 , H01S5/4093 , H04N9/3129
摘要： In at least one embodiment of the luminous means (1), the latter comprises at least one semiconductor laser (2) which is designed to emit a primary radiation (P) having a wavelength of between 360 nm and 485 nm inclusive. Furthermore, the luminous means (1) comprises at least one conversion means (3) which is disposed downstream of the semiconductor laser (2) and is designed to convert at least part of the primary radiation (P) into secondary radiation (S) having a greater wavelength that is different from the primary radiation (P). In this case, the radiation (R) emitted by the luminous means (1) exhibits an optical coherence length amounting to at most 50 µm.
摘要翻译：在发光装置（1）的至少一个实施例中，这包括至少一个半导体激光器（2），该半导体激光器被设置为发射波长在360nm和485nm之间（包括端值）的初级辐射（P）。此外，所述发光装置（1）包括至少一个转换装置（3），半导体激光器（2）的下游，并适于至少一个初级辐射（P）的成次级辐射（S）与所述初级辐射（P）不同的一个部分，转换更大的波长。由发光装置（1）发射的辐射（R）表现出至多50μm的光学相干长度。

2. 发明申请

WO2009039811A3 RADIATION-EMITTING SEMICONDUCTOR CHIP 审中-公开
标题翻译：辐射发射半导体芯片
公开(公告)号：WO2009039811A3
公开(公告)日：2009-09-03
申请号：PCT/DE2008001423
申请日：2008-08-27
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , LELL ALFRED , EICHLER CHRISTOPH , RUMBOLZ CHRISTIAN
发明人： LELL ALFRED , EICHLER CHRISTOPH , RUMBOLZ CHRISTIAN
IPC分类号： H01L33/44
CPC分类号： H01L33/44 , H01L2924/0002 , H01S5/2022 , H01S5/22 , H01S5/2205 , H01S5/2218 , H01S5/222 , H01L2924/00
摘要： The invention relates to a radiation-emitting semiconductor chip (1), which has an active zone (2) for generating radiation having the wavelength lambda and a structured region (3) having structure elements disposed at irregular intervals, said elements comprising a first material having a first refractive index n1 and surrounded by a medium comprising a second material having a second refractive index n2. Furthermore, a method for producing such a semiconductor chip is provided.
摘要翻译：本发明涉及一种发射辐射的半导体芯片（1）具有用于产生波长为λ的辐射，并且结构化的区域的活性区域（2）（3）与不规则地排列，其包括具有第一折射率n1和所述第一种材料的结构元件被具有第二折射率n2的第二材料的介质包围。此外，指定了用于制造这种半导体芯片的方法。

3. 发明申请

WO2015154975A2 SEMICONDUCTOR STRIP LASER AND SEMICONDUCTOR COMPONENT 审中-公开
标题翻译：半导体带状激光器和半导体器件
公开(公告)号：WO2015154975A2
公开(公告)日：2015-10-15
申请号：PCT/EP2015056083
申请日：2015-03-23
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： MÜLLER JENS , LELL ALFRED , STRAUSS UWE
IPC分类号： H01S5/022
CPC分类号： H01S5/02476 , H01S5/0224 , H01S5/02469 , H01S5/02484 , H01S5/0425 , H01S5/168 , H01S5/2214 , H01S5/222 , H01S5/2226 , H01S5/32341 , H01S2301/176
摘要： The invention relates to a semiconductor strip laser which, in at least one embodiment, comprises a first semiconductor region (11) of a first conductivity type. Furthermore, the semiconductor strip laser includes a second semiconductor region (13) of a second conductivity type. An active zone (12) for generating laser radiation is located between the semiconductor regions (11, 13). A strip waveguide (3) is formed in the second semiconductor region (13). The strip waveguide (3) is set up for one-dimensional wave guidance along a waveguide direction (L). A first electric contact (41) is located on the first semiconductor region (11), and a second electric contact (43) is located on the second semiconductor region (13). Furthermore, the semiconductor strip laser (1) includes a heat spreader (2) which, at least up to a temperature of 220° C, is dimensionally stably connected to the semiconductor regions (11, 13). The heat spreader (2) has an average thermal conductivity of at least 50 W/mK.
摘要翻译：在至少一个实施例中，半导体条形激光器包括第一导电类型的第一半导体区域（11）。此外，半导体条形激光器包括第二导电类型的第二半导体区域（13）。用于产生激光辐射的有源区（12）位于半导体区（11,13）之间。在第二半导体区域（13）中形成条形波导（3）。条形波导（3）被布置成沿波导方向（L）的一维波导。第一电触点（41）位于第一半导体区域（11）上，第二电触点（43）位于第二半导体区域（13）上。此外，半导体带状激光器（1）包括散热器（2），该散热器在尺寸上稳定地连接至半导体区域（11,13），至少达到220℃的温度散热器（2）具有至少50W / mK的平均导热率。

4. 发明申请

WO2011069769A3 LASER DIODE ASSEMBLY AND METHOD FOR PRODUCING A LASER DIODE ASSEMBLY 审中-公开
标题翻译：激光二极管布置和制造激光二极管布置的方法
公开(公告)号：WO2011069769A3
公开(公告)日：2011-11-10
申请号：PCT/EP2010067271
申请日：2010-11-11
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , STRASSBURG MARTIN , LELL ALFRED
发明人： STRASSBURG MARTIN , LELL ALFRED
IPC分类号： H01S5/323 , H01S5/40
CPC分类号： H01S5/4043 , H01S5/2068 , H01S5/22 , H01S5/227 , H01S5/3063 , H01S5/3095 , H01S5/32341 , H01S5/405 , H01S5/4087
摘要： The invention relates to a laser diode assembly having a semiconductor substrate (2; 101; 201; 301; 72), at least two laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) each having one active zone (6, 12; 105, 109, 113; 207, 213; 307, 311; 76, 82, 88) and at least one translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85). According to the invention, the laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) and the translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85) are grown up monolithically on the semiconductor substrate (2; 101; 201; 301; 72). The laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) are electrically conductively connected to each other by means of the translucent ohmic contact (9; 107, 111; 204, 210; 304, 309; 79, 85). The laser diodes (26a, 26b, 27a, 27b; 36a, 36b, 37a, 37b; 46a, 46b, 47a, 47b; 66a, 66b, 67a, 67b; 94a, 94b, 95a, 95b, 96a, 96b) formed from the laser stacks (17, 18; 117, 118, 119; 217, 218; 317, 318; 97, 98, 99) have a two-dimensional structure.
摘要翻译：它是一种激光二极管组件，包括： - 一个半导体基片（2; 101; 201; 301; 72）， - 至少两个激光叠层（17，18; 117，118，119; 217,218; 317，318; 97，98，99 ），每个有源区（6,12; 105，109，113; 207，213; 307，311; 76，82，88），以及 - 至少一个透光性欧姆接触（9; 107，111; 204，210; 304 ，309; 79，85）。激光堆（17，18; 117，118，119; 217,218; 317，318; 97，98，99）和所述透光性欧姆接触（9; 107，111; 204，210; 304，309; 79，85 ）在半导体衬底（2; 101; 201; 301; 72）上单片生长。激光堆（17，18; 117，118，119; 217,218; 317，318; 97，98,99）（通过透光欧姆接触9; 107,111; 204，210; 304，309; 79， 85）以导电方式相互连接。从激光叠层（17，18; 117，118，119; 217,218; 317，318; 97，98，99）形成的激光二极管（26A，26B，27A，27B; 36A，36B，37A，37B; 46A， 46B，47A，47B; 66A，66B，67A，67B; 94A，94B，95A，95B，96A，96B）具有一个二维结构。

5. 发明申请

WO2013160212A9 SEMICONDUCTOR LASER LIGHT SOURCE HAVING AN EDGE-EMITTING SEMICONDUCTOR BODY 审中-公开
标题翻译：与边缘发射的半导体本体半导体激光光源
公开(公告)号：WO2013160212A9
公开(公告)日：2014-06-26
申请号：PCT/EP2013058217
申请日：2013-04-19
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： EICHLER CHRISTOPH , BREIDENASSEL ANDREAS , LELL ALFRED
IPC分类号： H01S5/10 , H01S5/02 , H01S5/026 , H01S5/028 , H01S5/12 , H01S5/20 , H01S5/22
CPC分类号： H01S5/1003 , H01S5/0202 , H01S5/0203 , H01S5/0264 , H01S5/0286 , H01S5/1017 , H01S5/1237 , H01S5/2063 , H01S5/22 , H01S2301/166
摘要： The invention relates to a semiconductor laser light source having an edge-emitting semiconductor body (10). The semiconductor body (10) contains a semiconductor layer stack (110) having an n-type layer (111), an active layer (112) and a p-type layer (113), said layer stack being designed to generate electromagnetic radiation comprising a coherent fraction (21). The semiconductor laser light source is designed to decouple the coherent fraction (21) of the electromagnetic radiation from a decoupling surface (101) of the semiconductor body (10), said decoupling surface being inclined towards the active layer (112). The semiconductor body (10) has a further external surface (102A, 102B, 102C) inclined towards the decoupling surface (101) and has at least one light-diffusing sub-region (12, 12A, 12B, 12C, 120A, 120B) that is provided in order to direct a portion of the electromagnetic radiation generated by the semiconductor layer stack (110) towards the further external surface (102A, 102B, 102C).
摘要翻译：提供了一种具有边发射半导体主体（10）的半导体激光光源。半导体本体（10）包括一个具有n-型层（111）的有源层（112）和一个p型层（113），其能够产生电磁辐射形成的半导体层堆叠（110），即相干部分（21）包括。半导体激光光源是用于从半导体本体的有源层（112）倾斜的输出面（101）中提取电磁辐射的相干成分（21）（10）形成。半导体本体（10）具有一个到输出表面（101）倾斜的多个外表面（102A，102B，102C），并具有至少一个光散射部（12，12A，12B，12C，120A，120B），其被提供给一个引导的半导体层堆叠（110）的方向上产生的进一步外表面的电磁辐射（102A，02B，102C）下的一部分。

6. 发明申请

WO2012150132A3 LASER LIGHT SOURCE 审中-公开
标题翻译：激光光源
公开(公告)号：WO2012150132A3
公开(公告)日：2013-03-07
申请号：PCT/EP2012057073
申请日：2012-04-18
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , EICHLER CHRISTOPH , DINI DIMITRI , LELL ALFRED
发明人： EICHLER CHRISTOPH , DINI DIMITRI , LELL ALFRED
IPC分类号： H01S5/22 , H01S5/10 , H01S5/223 , H01S5/227
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0217 , H01S5/0287 , H01S5/065 , H01S5/101 , H01S5/1014 , H01S5/1017 , H01S5/1064 , H01S5/2022 , H01S5/2031 , H01S5/2059 , H01S5/2215 , H01S5/2218 , H01S5/2219 , H01S5/2222 , H01S5/2231 , H01S5/2275 , H01S5/34326 , H01S5/34333 , H01S2301/166 , H01S2301/176 , H01S2301/185
摘要： The invention relates to a laser light source having a ridge waveguide structure, comprising a semi-conductor layer sequence (10) having a plurality of functional layers (4) and an active region (45) that is suitable for generating laser light during operation, wherein at least one of the functional layers (4) is designed as a ridge (11) of the ridge waveguide structure, and wherein the semiconductor layer sequence (10) has a mode filter structure (6) that is formed as part of the ridge (11) and/or along a main extension plane of the functional layers (4) next to the ridge (11) and/or perpendicular to the main extension plane of the functional layers (4) below the ridge (11).
摘要翻译：它是用一个脊形波导结构，具有具有多个功能层（4）和其适于产生操作期间激光光的有源区（45）的半导体层序列（10）的激光光源，所述功能层的方法，其中至少一种（指定 4）11形成为脊形波导结构的腹板（11），并且其中所述半导体层序列（10）包括模滤波器结构（6），作为网络中的一部分（11）和/或（沿着官能4层的主延伸面）旁边的幅材（）被形成和/或垂直于所述功能层（4）的幅材（11下方的主平面）。

7. 发明申请

WO0139282A3 OPTICAL SEMICONDUCTOR DEVICE COMPRISING A MULTIPLE QUANTUM WELL STRUCTURE 审中-公开
标题翻译：具有多量子板结构的光学半导体器件
公开(公告)号：WO0139282A3
公开(公告)日：2001-12-06
申请号：PCT/DE0004089
申请日：2000-11-20
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , HAERLE VOLKER , HAHN BERTHOLD , LUGAUER HANS JUERGEN , BOLAY HELMUT , BADER STEFAN , EISERT DOMINIK , STRAUSS UWE , VOELKL JOHANNES , ZEHNDER ULRICH , LELL ALFRED , WEIMAR ANDREAS
发明人： HAERLE VOLKER , HAHN BERTHOLD , LUGAUER HANS-JUERGEN , BOLAY HELMUT , BADER STEFAN , EISERT DOMINIK , STRAUSS UWE , VOELKL JOHANNES , ZEHNDER ULRICH , LELL ALFRED , WEIMAR ANDREAS
IPC分类号： H01L33/06 , H01L33/32 , H01S5/34 , H01S5/343 , H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333
摘要： The invention relates to an optical semiconductor device comprising a multiple quantum well structure, in which well layers and barrier layers consisting of different types of semiconductor layers are stacked alternately on top of one another. The invention is characterised in that the well layers (6a) have a first composition, based on a nitride semiconductor material with a first electron energy and the barrier layers (6b) have a second composition based on a nitride semiconductor material with a higher electron energy in relation to the first electron energy. An active radiative quantum well layer (6c) is located downstream of said layers in the epitaxial direction and the essentially non-radiative well layers (6a) positioned upstream, together with the barrier layers (6b) form a superlattice for said active quantum well layer.
摘要翻译：具有多量子阱结构的光学半导体器件堆叠在阱层和不同类型的半导体层的势垒层交替层叠，所述阱层（6A）的基础上，具有第一电子能量和势垒层的氮化物半导体材料的第一组合物（6b）中的一个的氮化物半导体材料的第二组合物被提供相对于所述第一电子能量更高的电子能量，其中一个辐射量子阱有源层（图6c）的下游布置为在生长的方向，为此，上游基本上无辐射阱层（6a）和阻挡层（6b）的形成的超晶格看到，

8. 发明申请

WO2014140035A2 SEMICONDUCTOR LASER HAVING IMPROVED INDEX GUIDING 审中-公开
标题翻译：半导体激光器与改进的索引指南
公开(公告)号：WO2014140035A2
公开(公告)日：2014-09-18
申请号：PCT/EP2014054736
申请日：2014-03-11
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： MÜLLER JENS , LELL ALFRED
IPC分类号： H01S5/22 , H01S5/02 , H01S5/028 , H01S5/20 , H01S5/323
CPC分类号： H01S5/22 , H01L21/3247 , H01S5/0202 , H01S5/028 , H01S5/0425 , H01S5/1017 , H01S5/204 , H01S5/2045 , H01S5/222 , H01S5/32341 , H01S2301/176
摘要： The invention relates to a semiconductor laser (1), comprising a main body (2). A strip (3) having a narrower width is provided on the main body (2). An active zone (4) for generating light radiation is provided. Surfaces (9, 10) of the main body (2) to the sides of the strip (3) and side surfaces (13, 14) of the strip (3) are covered with an electrically insulating protective layer (11). An electrically conductive layer (12) is provided on an upper side of the strip (3) as a contact. The semiconductor laser is characterised in that a cavity (15) is provided between a side surface (13, 14) of the strip (3) and the protective layer (11) at least in a limited section.
摘要翻译：本发明涉及一种半导体激光器（1）与基体（2），其特征在于，在基体（2）在宽条窄（3）设置有（4）提供了一种用于产生光辐射的有源区，所述表面电（9，10）的条带（3）具有电绝缘性的保护层（11）的基体（2）的条带（3）表面和侧表面的侧（13，14）的覆盖，其特征在于，在条带的上侧（3）提供导电层（12）作为触点，其特征在于，在条（3）的侧表面（13,4）和保护层（11）之间至少在有限的部分内设置空腔（15）。

9. 发明申请

WO2013152909A3 LASER DIODE DEVICE 审中-公开
标题翻译：二极管器件
公开(公告)号：WO2013152909A3
公开(公告)日：2013-12-19
申请号：PCT/EP2013054890
申请日：2013-03-11
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： STRAUSS UWE , TAUTZ SOENKE , LELL ALFRED , VIERHEILIG CLEMENS
IPC分类号： H01S5/022 , H01S5/024 , H01S5/323
CPC分类号： H01S5/022 , H01S5/02212 , H01S5/02272 , H01S5/02461 , H01S5/02469 , H01S5/0262 , H01S5/32341 , H01S2301/176
摘要： The invention relates to a laser diode device, which has a housing (1) with a mounting part (11) and a laser diode chip (2), which is based on a nitride compound semi-conductor material, in the housing (1) on the mounting part (11), wherein the laser diode chip (2) is mounted directly on the mounting part (11) by means of a solder layer (3) and the solder layer (3) has a thickness of greater than or equal to 3 mum.
摘要翻译：提供了一种具有（1）具有安装部（11）的壳体的激光二极管器件，（2）在所述安装构件（11），其中，所述激光二极管芯片上的壳体（1）（2）使用基于氮化物的化合物半导体材料的激光二极管芯片上的焊料层（3）直接在所述安装部分（11）被安装时，与焊料层（3）的厚度为大于或等于3的妈妈。

10. 发明申请

WO2009155907A2 CONVERSION ELEMENT AND LIGHTING DEVICE 审中-公开
标题翻译：转换元件和灯
公开(公告)号：WO2009155907A2
公开(公告)日：2009-12-30
申请号：PCT/DE2009000883
申请日：2009-06-25
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , BAUMANN FRANK , PETERSEN KIRSTIN , TAUTZ SOENKE , LELL ALFRED , STRAUSS UWE
发明人： BAUMANN FRANK , PETERSEN KIRSTIN , TAUTZ SOENKE , LELL ALFRED , STRAUSS UWE
IPC分类号： H01L33/50 , H01L33/64
CPC分类号： H01L33/501 , H01L33/641 , H01L33/644
摘要： In at least one embodiment of the conversion element (1) the latter comprises a light-permeable matrix material (2) into which heat-conducting particles (4) and at least one conversion means (3) are embedded, said conversion means (3) being designed to at least partially convert light of a certain wavelength to light of a different wavelength. The conversion means (3) and/or the heat-conducting particles (4) form heat-conducting paths P in the conversion element (1). Heat can be efficiently carried off from the conversion element (1) via the heat-conducting paths P formed by the heat-conducting particles (4) and the conversion means (3), thereby increasing the conversion efficiency of the conversion element.
摘要翻译：在转换元件中的至少一个实施例（1）本用半透明基体材料（2）设计成在Wärmeleitpartikel（4）和至少一个转换装置（3）被嵌入，其中所述转换装置（3）至少适于的波长的光将其转换成不同波长在一定程度上的光。由转换装置（3）和/或所述Wärmeleitpartikel（4）形成在WärmeleitpfadeP转换元件（1）。对这些由Wärmeleitpartikel（4）和变换装置（3）形成Wärmeleitpfade（P）可以从转换元件有效地消散热量（1）。这增加了转换元件增加转换效率。

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