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    • 2. 发明申请
    • APPARATUS AND PROCESS FOR THE PRODUCTION OF FINE LINE METAL TRACES
    • 生产细线金属追踪的设备和工艺
    • WO1994026495A1
    • 1994-11-24
    • PCT/US1994005084
    • 1994-05-06
    • LITEL INSTRUMENTS
    • LITEL INSTRUMENTSHUNTER, Robert, O.SMITH, Adlai, H.McARTHUR, Bruce, B.
    • B29C37/00
    • H05K3/061B23K26/066C23F1/02H01Q15/0006H05K3/0032H05K3/027H05K3/108H05K3/4644H05K2203/0571H05K2203/1545
    • A metallic substrate (60) such as copper foil has an etch barrier (64) such as polyimide, Saran wrap, or other plastic applied. This barrier is thereafter selectively etched or ablated with a laser, for example by passing the light through a phase reticle or phase mask having at least the image information for the fine metallic lines thereon. The remaining barrier (64') then acts in a second etch process to remove the underlying metallic layer (60'). A wet or dry (such as RIE) etch may be employed. Over conventional photoresist exposure methods, the developer and resist steps are eliminated. The laser can precisely pattern the barrier (64) in a single step with the remainder of the production of the required metallic fine lines (60') relying on a simple wet etch, a process whose control parameters are well understood and consume little time. Alternatively, a process for the direct ablation of metallic layers is disclosed.
    • 诸如铜箔的金属基底(60)具有蚀刻阻挡层(64),例如聚酰亚胺,Saran膜或其他塑料。 此后,该势垒用激光器选择性蚀刻或烧蚀,例如通过使光通过至少具有细金属线的图像信息的相位掩模版或相位掩模。 然后,剩余的屏障(64')在第二蚀刻工艺中起作用以去除下面的金属层(60')。 可以使用湿或干(例如RIE)蚀刻。 在常规的光致抗蚀剂曝光方法中,消除了显影剂和抗蚀剂步骤。 激光器可以在单个步骤中精确地图案化屏障(64),剩余的所需金属细线(60')的生产依赖于简单的湿蚀刻,其控制参数被很好地理解并且消耗很少时间的过程。 或者,公开了用于直接烧蚀金属层的工艺。
    • 3. 发明申请
    • APPARATUS AND PROCESS FOR USING FRESNEL ZONE PLATE ARRAY FOR PROCESSING MATERIALS
    • 用于加工材料的FRESNEL区域板阵列的装置和方法
    • WO1995007789A1
    • 1995-03-23
    • PCT/US1994010383
    • 1994-09-14
    • LITEL INSTRUMENTS
    • LITEL INSTRUMENTSSMITH, Adlai, H.HUNTER, Robert, O., Jr.McARTHUR, Bruce, B.
    • B23K26/00
    • B23K26/066
    • An apparatus and a process of using a Fresnel zone plate array (55) is utilized for processing materials. The Fresnel zone plate array (55) has a plurality of discrete subapertures (A - X) with each subaperture containing image information at a discrete working distance from the plate; each image produced by a subaperture (A - X) of the Fresnel zone plate array (55) typically differs from adjacent images from adjacent subapertures typically in size, shape or gain. A beam is scanned and registered to a discrete selected subaperture on the plate to cause an image from the subaperture to form on a work piece (53') located at the working distance of a scanned subaperture. At each location for processing utilizing a particular selected image, the work piece (53') is positioned, and the laser pulsed with the selected image causing processing of the work piece (53').
    • 使用菲涅尔带状板阵列(55)的装置和方法用于处理材料。 菲涅耳带片阵列(55)具有多个离散的子孔径(A-X),每个子孔径包含离板的离散工作距离的图像信息; 由菲涅耳带片阵列(55)的子孔径(A-X)产生的每个图像通常不同于相邻子孔径的相邻图像,通常在尺寸,形状或增益方面。 将光束扫描并登记在板上的离散的所选子孔径上,以使得来自子孔径的图像形成在位于扫描的子孔径的工作距离处的工件(53')上。 在用于利用特定选定图像进行处理的每个位置处,工件(53')被定位,并且用所选择的图像脉冲的激光引起工件(53')的处理。
    • 4. 发明申请
    • ADAPTIVE OPTIC WAFER STEPPER ILLUMINATION SYSTEM
    • 自适应光学平移式照明系统
    • WO1993022711A1
    • 1993-11-11
    • PCT/US1992003998
    • 1992-05-07
    • LITEL INSTRUMENTS
    • LITEL INSTRUMENTSMacDONALD, Bruce, G.HUNTER, Robert, O., Jr.SMITH, Adlai, H.
    • G03F07/20
    • G03F7/70233G03F7/70266
    • The illumination system for a semiconductor wafer stepper includes reflective elements within the projection optics of a primary mirror (10), a secondary mirror (8), a deformable mirror (6) and a beamsplitter (4). The beamsplitter directs light reflected from the wafer surface (24) back into an interferometer camera to provide depth of focus and aberration information to a computer (16) which activates and selectively deforms the deformable mirror (6). Light, input from a mercury arc lamp or laser source, is projected either with an expanded or scanned beam through a reticle (20) which is printed with the pattern to be transferred to the wafer. An interferometer is included to combine light reflected from the wafer surface with a portion of the incoming light at the beamsplitter. The interference pattern formed by that combination is used by the computer to provide real-time manipulation of focus errors, vibration and aberration by deformation of the deformable mirror. The deformable mirror and interferometer system is also applicable to folded beam refractive optic illumination systems and pure refractive optic systems in which a detour is made within the optical train to access the deformable mirror.
    • 用于半导体晶片步进器的照明系统包括主镜(10),副镜(8),可变形反射镜(6)和分束器(4)的投影光学器件内的反射元件。 分束器将从晶片表面(24)反射的光引导回到干涉仪相机中以向计算机(16)提供焦点深度和像差信息,从而激活并选择性地使可变形反射镜(6)变形。 来自水银弧光灯或激光源的光线通过扩展的或扫描的光束投射通过掩模版(20),该掩模版(20)被打印以转印到晶片上。 包括干涉仪以将从晶片表面反射的光与分束器处的入射光的一部分组合。 由该组合形成的干涉图案由计算机用于通过可变形反射镜的变形来实时地处理聚焦误差,振动和像差。 可变形反射镜和干涉仪系统也可用于折叠光束折射光学照明系统和纯折射光学系统,其中在光学系列内形成绕行线以接近可变形反射镜。
    • 5. 发明申请
    • METHOD AND APPARATUS FOR DETERMINATION OF SOURCE POLARIZATION MATRIX
    • 用于确定源偏振矩阵的方法和装置
    • WO2006078843A1
    • 2006-07-27
    • PCT/US2006/001942
    • 2006-01-19
    • LITEL INSTRUMENTSSMITH, Adlai, H.HUNTER, Robert, O., Jr.
    • SMITH, Adlai, H.HUNTER, Robert, O., Jr.
    • G03F7/20G01J4/00
    • G03F7/70566G01J4/04G01N21/21G03F7/70591
    • A method and apparatus for resolving both the angular (nx,ny) and spatial -(x,y) dependence of the effective source coherence matrix for lithographic steppers and scanners is described. First an in-situ source metrology instrument is combined with in- situ polarization elements to create an in-situ source imaging polarizer or ISIP. The ISIP is loaded into a photolithographic exposure tool, aligned, and then exposed onto a suitable recording media or recording sensor. The recording sensor comprising either resist coated wafers or electronic sensors capture the image intensity at a multiplicity of different field points. The resulting measurements are entered into a computer program that reconstructs the source coherence matrix as a function of direction cosine at multiple field points. Alternative ISIP configurations are discussed in some detail. Applications of the ISIP include polarization source mapping for deep-UV and EUV lithography, process optimization, process monitoring, and chip manufacturing.
    • 描述了用于解决用于光刻步进机和扫描仪的有效源相干矩阵的角(nx,ny)和空间 - (x,y)依赖性的方法和装置。 首先,原位测量仪器与原位偏振元件相结合,以创建原位成像偏振器或ISIP。 将ISIP装载到光刻曝光工具中,对齐,然后暴露在合适的记录介质或记录传感器上。 包括抗蚀剂涂覆的晶片或电子传感器的记录传感器在多个不同的场点捕获图像强度。 所得到的测量值被输入到在多个场点上重建源相干矩阵作为方向余弦的函数的计算机程序。 备选的ISIP配置将在一些细节中进行讨论。 ISIP的应用包括用于深UV和EUV光刻,工艺优化,过程监控和芯片制造的极化源映射。
    • 6. 发明申请
    • METHOD OF EMULATION OF LITHOGRAPHIC PROJECTION TOOLS
    • 光刻投影工具的仿真方法
    • WO2005103819A2
    • 2005-11-03
    • PCT/US2005/013403
    • 2005-04-20
    • LITEL INSTRUMENTSSMITH, Adlai, H.HUNTER, Robert, O., Jr.BENDIK, Joseph
    • SMITH, Adlai, H.HUNTER, Robert, O., Jr.BENDIK, Joseph
    • G03F
    • G03F7/705G06F17/5009G06F2217/10G06F2217/86
    • Techniques for producing emulations of lithographic tools and processes using virtual wafers and lithographic libraries are described. Emulating a lithographic projection imaging machine includes determining characteristics of the imaging machine, of a reticle used in the imaging machine, and of layer specific processes. Then performing emulation on a virtual wafer using the characteristics of the imaging machine, reticle, and layer specific processes. The machine characteristics determined include characteristics of an exposure source, lens aberration, exit pupil, mechanics, vibration, calibration offsets, or resist. The reticle characteristics determined include distortion, critical dimension, phase transmission error, mask clips, as drawn specifications, or mask sites. And, the layer specific process characteristics include machine model, machine setting identification, and field exposure sequencing. Emulation results can be entered into an optimizer and optimum operating conditions related to the projection imaging machine are determined.
    • 描述了用于生产使用虚拟晶片和光刻库的光刻工具和工艺仿真的技术。 仿真光刻投影成像机包括确定成像机的特征,成像机中使用的掩模版和特定于层的工艺。 然后使用成像机,掩模版和层特定工艺的特性在虚拟晶片上进行仿真。 所确定的机器特性包括曝光源的特性,透镜像差,出射光瞳,力学,振动,校准偏移或抗蚀剂。 确定的掩模版特性包括失真,临界尺寸,相位传输误差,掩模夹,绘图规范或掩模位置。 而且,层的具体过程特征包括机器模型,机器设置识别和现场曝光测序。 可以将仿真结果输入到优化器中,并且确定与投影成像机相关的最佳操作条件。
    • 8. 发明申请
    • HIGH POWER PHASE MASKS FOR IMAGING SYSTEMS
    • 用于成像系统的高功率相位掩码
    • WO1995030932A1
    • 1995-11-16
    • PCT/US1994005098
    • 1994-05-06
    • LITEL INSTRUMENTS
    • LITEL INSTRUMENTSSMITH, Adlai, H.HUNTER, Robert, O.
    • G03C05/00
    • G03F1/34G03F7/70283
    • The phase mask (22) comprises binary wave gratings which deflect light away for the collecting aperture of the projection system and binary phase gratings which deflect incident light into a fan of rays to fill the collecting aperture. In the transmissive regions, the mask (22) consists of randomly-placed squares etched to a depth corresponding to a half-wave retardation and filling approximately fifty percent of the area within the transmissive region. The "blocking" regions consist of a binary grating etched to the same depth as that of the transmissive region but having sufficiently high spatial frequency to deflect the incident light to points outside of the collecting aperture.
    • 相位掩模(22)包括二进制波形光栅,其将光偏离用于投影系统的收集孔径和将入射光偏转成光线的风扇以填充收集孔的二进制相位光栅。 在透射区域中,掩模(22)由随机放置的正方形组成,其被蚀刻到对应于半波延迟的深度并且填充透射区域内的大约百分之五十的面积。 “阻挡”区域由蚀刻到与透射区域相同深度的二进制光栅组成,但是具有足够高的空间频率以将入射光偏转到收集孔外部的点。
    • 9. 发明申请
    • USE OF FRESNEL ZONE PLATES FOR MATERIAL PROCESSING
    • 用于材料加工的FRESNEL区域板的使用
    • WO1994001240A1
    • 1994-01-20
    • PCT/US1992005555
    • 1992-07-01
    • LITEL INSTRUMENTS
    • LITEL INSTRUMENTSMacDONALD, Bruce, G.HUNTER, Robert, O., Jr.SMITH, Adlai, H.GUEST, Clark, C.
    • B23K26/006
    • B23K26/043B23K26/04B23K26/066B23K26/067H05K3/0017
    • The apparatus for machining and material processing includes an excimer laser and a Fresnel zone plate array (FZP) positioned parallel to the workpiece, with the distance between the FZP and the workpiece being the focal length of the FZP. For each hole to be formed on the workpiece a corresponding Fresnel zone is patterned onto the FZP. Each Fresnel zone may be patterned directly centered over the desired hole location or in high density patterns it may be located off-center from the hole with deflection being accomplished by the formation of finer circular arcs on the side of the Fresnel zone opposite the desired direction of deflection. A beam scanner is included to provide a more uniform illumination of the FZP by the laser beam. The scanning eliminates non-uniformity of intensity. The alignment mechanism uses a helium-neon laser, the beam from which is projected onto a surface relief grating on the workpiece. The reflected light from the surface relief grating is filtered to create interference fringes which, when aligned, provide maximum light intensity projected through a transmission grating on the Fresnel zone plate.
    • 用于加工和材料加工的装置包括准分子激光器和平行于工件定位的菲涅耳带状平板阵列(FZP),FZP和工件之间的距离是FZP的焦距。 对于要在工件上形成的每个孔,将相应的菲涅尔区域图案化到FZP上。 每个菲涅尔区域可以直接以所需孔位置为中心图案,或以高密度图案形成图案,其可以位于离开孔的偏心处,偏转通过在菲涅尔区域的与期望方向相反的一侧上形成更细圆弧来实现 的偏转。 包括光束扫描器以通过激光束提供更均匀的FZP照明。 扫描消除了强度的不均匀性。 对准机构使用氦氖激光器,其中的光束投影到工件上的表面起伏光栅上。 来自表面起伏光栅的反射光被过滤以产生干涉条纹,当对准时,其提供通过菲涅耳带板上的透射光栅投射的最大光强度。
    • 10. 发明申请
    • IMAGING AND ILLUMINATION SYSTEM WITH ASPHERIZATION AND ABERRATION CORRECTION BY PHASE STEPS
    • 成像和照明系统通过相位步骤进行修正和解除校正
    • WO1993025938A1
    • 1993-12-23
    • PCT/US1992005155
    • 1992-06-18
    • LITEL INSTRUMENTS
    • LITEL INSTRUMENTSMacDONALD, Bruce, G.HUNTER, Robert, O., Jr.SMITH, Adlai, H.
    • G03F07/20
    • G03F7/70233G02B27/0025G03F7/70258G03F7/70308
    • The imaging and illumination system with aspherization and aberration correction by phase steps includes two transparent phase plates (6, 8) within the optical train of a stepper illumination system. The first plate (6) places each ray at the corrected position on the axial stigmatism plate (8) to satisfy the sine condition. The second plate (8), which is the axial stigmatism plate, ensures that each ray of light focuses at the focal point. The aberration corrected light is reflected by a deformable mirror (10) toward a secondary mirror (14), a primary mirror (12) and finally onto a wafer (20) to project a single field of large dimension. The secondary and primary mirrors provide aspherization by forming phase steps in the surfaces of the mirrors. The deformable mirror, to permit realtime correction of aberrations and manipulation of the beam for each field imaged by the system. A set of two-dimensional scanning mirrors (16, 18) is placed between the laser light source (2) and a reticle (4) containing the pattern which is to be transferred to the wafer. These mirrors step a beam across the reticle a single subfield (40) of the pattern at a time. Such individual stepping permits the deformable mirror to correct for each sub-field thereby allowing a very large field of view for the image transferred to the wafer.
    • 具有非均匀化和相位步进的像差校正的成像和照明系统包括在步进照明系统的光学系列内的两个透明相位板(6,8)。 第一板(6)将每根光线放置在轴向刻字板(8)上的校正位置以满足正弦条件。 作为轴向刻字板的第二板(8)确保每个光线在焦点处聚焦。 像差校正光被可变形反射镜(10)反射到次级反射镜(14),初级反射镜(12),最后反射到晶片(20)上以投射大尺寸的单个场。 次级和初级反射镜通过在反射镜的表面中形成相位步骤来提供非均匀化。 可变形反射镜,允许对系统成像的每个场的像差的实时校正和光束的操纵。 一组二维扫描镜(16,18)被放置在激光光源(2)和包含要转印到晶片的图案的掩模版(4)之间。 这些反射镜一次将光束跨过光罩跨过图案的单个子场(40)。 这种单独的步骤允许可变形反射镜校正每个子场,从而允许传输到晶片的图像的非常大的视场。