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    • 5. 发明申请
    • APPARATUS AND PROCESS FOR DETERMINATION OF DYNAMIC LENS FIELD CURVATURE
    • 用于确定动态镜头场景曲线的装置和方法
    • WO2005109106A8
    • 2006-12-14
    • PCT/US2005012499
    • 2005-04-12
    • LITEL INSTR INCSMITH ADLAI HHUNTER ROBERT O JR
    • SMITH ADLAI HHUNTER ROBERT O JR
    • G03F7/20
    • G03F7/70483
    • A technique for the determination of dynamic lens field curvature uniquely associated with a photolithographic scanner is described. A series of lithographic exposures is performed on a resist coated silicon wafer using a photolithographic scanner. The lithographic exposures produce an array of focusing fiducials that are displaced relative to each other in a unique way. The resulting measurements are fed into a computer algorithm that determines the dynamic lens field curvature (ZDLC) perpendicular to the scanning direction in an absolute sense. Furthermore, the effects of wafer flatness, wafer surface non-uniformity, and stage error are considered. The ZDLC information can be used to improve lithographic modeling, overlay modeling, and advanced process control techniques related to scanner stage dynamics.
    • 描述了用于确定与光刻扫描仪唯一相关联的动态透镜场曲率的技术。 使用光刻扫描仪在抗蚀剂涂覆的硅晶片上进行一系列光刻曝光。 光刻曝光产生了以独特的方式相对于彼此移位的聚焦基准阵列。 所得到的测量被馈送到绝对意义上决定垂直于扫描方向的动态透镜场曲率(ZDLC)的计算机算法。 此外,考虑了晶片平坦度,晶片表面不均匀性和阶段误差的影响。 ZDLC信息可用于改进与扫描仪阶段动力学相关的光刻建模,叠加建模和高级过程控制技术。
    • 6. 发明申请
    • METHOD AND APPARATUS FOR DETERMINATION OF SOURCE POLARIZATION MATRIX
    • 用于确定源偏振矩阵的方法和装置
    • WO2006078843A1
    • 2006-07-27
    • PCT/US2006/001942
    • 2006-01-19
    • LITEL INSTRUMENTSSMITH, Adlai, H.HUNTER, Robert, O., Jr.
    • SMITH, Adlai, H.HUNTER, Robert, O., Jr.
    • G03F7/20G01J4/00
    • G03F7/70566G01J4/04G01N21/21G03F7/70591
    • A method and apparatus for resolving both the angular (nx,ny) and spatial -(x,y) dependence of the effective source coherence matrix for lithographic steppers and scanners is described. First an in-situ source metrology instrument is combined with in- situ polarization elements to create an in-situ source imaging polarizer or ISIP. The ISIP is loaded into a photolithographic exposure tool, aligned, and then exposed onto a suitable recording media or recording sensor. The recording sensor comprising either resist coated wafers or electronic sensors capture the image intensity at a multiplicity of different field points. The resulting measurements are entered into a computer program that reconstructs the source coherence matrix as a function of direction cosine at multiple field points. Alternative ISIP configurations are discussed in some detail. Applications of the ISIP include polarization source mapping for deep-UV and EUV lithography, process optimization, process monitoring, and chip manufacturing.
    • 描述了用于解决用于光刻步进机和扫描仪的有效源相干矩阵的角(nx,ny)和空间 - (x,y)依赖性的方法和装置。 首先,原位测量仪器与原位偏振元件相结合,以创建原位成像偏振器或ISIP。 将ISIP装载到光刻曝光工具中,对齐,然后暴露在合适的记录介质或记录传感器上。 包括抗蚀剂涂覆的晶片或电子传感器的记录传感器在多个不同的场点捕获图像强度。 所得到的测量值被输入到在多个场点上重建源相干矩阵作为方向余弦的函数的计算机程序。 备选的ISIP配置将在一些细节中进行讨论。 ISIP的应用包括用于深UV和EUV光刻,工艺优化,过程监控和芯片制造的极化源映射。
    • 8. 发明申请
    • METHOD OF EMULATION OF LITHOGRAPHIC PROJECTION TOOLS
    • 光刻投影工具的仿真方法
    • WO2005103819A2
    • 2005-11-03
    • PCT/US2005/013403
    • 2005-04-20
    • LITEL INSTRUMENTSSMITH, Adlai, H.HUNTER, Robert, O., Jr.BENDIK, Joseph
    • SMITH, Adlai, H.HUNTER, Robert, O., Jr.BENDIK, Joseph
    • G03F
    • G03F7/705G06F17/5009G06F2217/10G06F2217/86
    • Techniques for producing emulations of lithographic tools and processes using virtual wafers and lithographic libraries are described. Emulating a lithographic projection imaging machine includes determining characteristics of the imaging machine, of a reticle used in the imaging machine, and of layer specific processes. Then performing emulation on a virtual wafer using the characteristics of the imaging machine, reticle, and layer specific processes. The machine characteristics determined include characteristics of an exposure source, lens aberration, exit pupil, mechanics, vibration, calibration offsets, or resist. The reticle characteristics determined include distortion, critical dimension, phase transmission error, mask clips, as drawn specifications, or mask sites. And, the layer specific process characteristics include machine model, machine setting identification, and field exposure sequencing. Emulation results can be entered into an optimizer and optimum operating conditions related to the projection imaging machine are determined.
    • 描述了用于生产使用虚拟晶片和光刻库的光刻工具和工艺仿真的技术。 仿真光刻投影成像机包括确定成像机的特征,成像机中使用的掩模版和特定于层的工艺。 然后使用成像机,掩模版和层特定工艺的特性在虚拟晶片上进行仿真。 所确定的机器特性包括曝光源的特性,透镜像差,出射光瞳,力学,振动,校准偏移或抗蚀剂。 确定的掩模版特性包括失真,临界尺寸,相位传输误差,掩模夹,绘图规范或掩模位置。 而且,层的具体过程特征包括机器模型,机器设置识别和现场曝光测序。 可以将仿真结果输入到优化器中,并且确定与投影成像机相关的最佳操作条件。
    • 10. 发明申请
    • METHOD OF EMULATION OF LITHOGRAPHIC PROJECTION TOOLS
    • 光刻投影工具的仿真方法
    • WO2005103819A3
    • 2006-02-02
    • PCT/US2005013403
    • 2005-04-20
    • LITEL INSTR INCSMITH ADLAI HHUNTER ROBERT O JRBENDIK JOSEPH
    • SMITH ADLAI HHUNTER ROBERT O JRBENDIK JOSEPH
    • G03F7/20G03F20060101G06F17/50G06G7/62
    • G03F7/705G06F17/5009G06F2217/10G06F2217/86
    • Techniques for producing emulations of lithographic tools and processes using virtual wafers and lithographic libraries are described. Emulating a lithographic projection imaging machine includes determining characteristics of the imaging machine, of a reticle used in the imaging machine, and of layer specific processes. Then performing emulation on a virtual wafer using the characteristics of the imaging machine, reticle, and layer specific processes. The machine characteristics determined include characteristics of an exposure source, lens aberration, exit pupil, mechanics, vibration, calibration offsets, or resist. The reticle characteristics determined include distortion, critical dimension, phase transmission error, mask clips, as drawn specifications, or mask sites. And, the layer specific process characteristics include machine model, machine setting identification, and field exposure sequencing. Emulation results can be entered into an optimizer and optimum operating conditions related to the projection imaging machine are determined.
    • 描述了用于生产使用虚拟晶片和光刻库的光刻工具和工艺仿真的技术。 仿真光刻投影成像机包括确定成像机的特征,成像机中使用的掩模版和特定于层的工艺。 然后使用成像机,掩模版和层特定工艺的特性在虚拟晶片上进行仿真。 所确定的机器特性包括曝光源的特性,透镜像差,出射光瞳,力学,振动,校准偏移或抗蚀剂。 确定的掩模版特性包括失真,临界尺寸,相位传输误差,掩模夹,绘图规范或掩模位置。 而且,层的具体过程特征包括机器模型,机器设置识别和现场曝光测序。 可以将仿真结果输入到优化器中,并且确定与投影成像机相关的最佳操作条件。