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1. 发明申请

WO1998012604A1 METHOD OF MONITORING A PHOTOLITHOGRAPHIC PROCESS 审中-公开
标题翻译：监测光刻过程的方法
公开(公告)号：WO1998012604A1
公开(公告)日：1998-03-26
申请号：PCT/IB1997000877
申请日：1997-07-15
申请人： PHILIPS ELECTRONICS N.V. , PHILIPS NORDEN AB
发明人： PHILIPS ELECTRONICS N.V. , PHILIPS NORDEN AB , ZANDBERGEN, Peter , JUFFERMANS, Casparus, Anthonius, Henricus , GEHOEL-VAN ANSEM, Wendy, Francisca, Johanna
IPC分类号： G03F07/20
CPC分类号： G03F7/70558 , G03F7/20 , G03F7/70591
摘要： A method of monitoring a photolithographic process whereby a test pattern (4) is imaged a number of times side by side with the same radiant energy on a photoresist layer (1) provided on a surface (2) of a substrate (3), but in a series of different irradiation times, after which the photoresist is developed. The irradiation dose or "energy-to-clear" with which the photoresist becomes just soluble in developer can thus be ascertained. The radiant energy with which the test pattern is imaged on the photoresist is only a fraction here of the radiant energy available in the process itself for imaging patterns on photoresist which is to be monitored. The method is thus suitable for monitoring a photolithographic process in which pulsed laser radiation is used for the pattern irradiation. The energy-to-clear can be accurately determined also in these processes.
摘要翻译：一种监测光刻工艺的方法，其中测试图案（4）在设置在基板（3）的表面（2）上的光致抗蚀剂层（1）上以相同的辐射能并排成像多次，但是在一系列不同的照射时间之后，光致抗蚀剂被显影。因此可以确定光致抗蚀剂刚刚溶于显影剂中的照射剂量或“能量到澄清”。测试图案在光致抗蚀剂上成像的辐射能量仅在该过程本身中可用的辐射能的一部分，用于对待监测的光致抗蚀剂上的图案进行成像。因此，该方法适用于监测其中脉冲激光辐射用于图案照射的光刻工艺。在这些过程中也可以准确地确定能量清除。

2. 发明申请

WO1998000761A1 PROJECTION ALIGNER FOR INTEGRATED CIRCUIT FABRICATION 审中-公开
标题翻译：用于集成电路制造的投影对准器
公开(公告)号：WO1998000761A1
公开(公告)日：1998-01-08
申请号：PCT/EP1997003406
申请日：1997-06-30
申请人： HERAEUS QUARZGLAS GMBH , SHIN-ETSU QUARTZ PRODUCTS CO., LTD. , FUJINOKI, Akira , NISHIMURA, Hiroyuki , MORI, Toshiki
发明人： HERAEUS QUARZGLAS GMBH , SHIN-ETSU QUARTZ PRODUCTS CO., LTD.
IPC分类号： G03F07/20
CPC分类号： G03F7/701 , G02B13/14 , G03F7/70225 , G03F7/70241 , G03F7/70958
摘要： A known projection aligner for integrated circuit fabrication, in which an integrated circuit pattern image is projected on a wafer, comprises an ArF excimer laser (1) and an optical system (5) comprising three groups of quartz glass optical members made of synthetic quartz glass. To provide a projection aligner having optical properties, such as transmittance, which are not degraded over a long time of operation and so that the optical system can be constructed at a low cost as a whole, it is suggested that the first quartz glass optical member group which is subjected to relatively low energy densities has a hydrogen molecule concentration in the range between 1 x 10 and 5 x 10 molecules/cm and that the third quartz glass optical member group (5a, 5b) which is subjected to relatively high energy densities has a hydrogen molecule concentration in the range between 5 x 10 to 5 x 10 molecules/cm .
摘要翻译：用于集成电路制造的已知投影对准器，其中集成电路图案图像投影在晶片上，包括ArF准分子激光器（1）和光学系统（5），其包括由合成石英玻璃制成的三组石英玻璃光学构件。为了提供一种投影对准器，其具有诸如透射率的光学性质，其在长时间的操作中不劣化，并且使得光学系统可以以低成本整体构造，因此建议第一石英玻璃光学构件经历相对低能量密度的基团的氢分子浓度在1×10 17至5×10 18分子/ cm 3之间的范围内，并且第三石英玻璃光学构件组（5a，5b））具有在5×10 18至5×10 19分子/ cm 3之间范围内的氢分子浓度。

3. 发明申请

WO1997048021A1 PROCESS FOR MODULATING INTERFEROMETRIC LITHOGRAPHY PATTERNS TO RECORD SELECTED DISCRETE PATTERNS IN PHOTORESIST 审中-公开
标题翻译：用于调制干涉图像图案以记录选定的离子图案的方法
公开(公告)号：WO1997048021A1
公开(公告)日：1997-12-18
申请号：PCT/US1997009298
申请日：1997-06-10
申请人： HOLOGRAPHIC LITHOGRAPHY SYSTEMS , HOBBS, Douglas, S.
发明人： HOLOGRAPHIC LITHOGRAPHY SYSTEMS
IPC分类号： G03F07/20
CPC分类号： G03F7/70408 , G03F7/001 , G03F7/2022 , G03F7/265 , G03F7/38 , G03F7/70466
摘要： A double exposure process is disclosed whereby a first exposure produced by conventional photolithograpic techniques generates a latent negative image in a photoresist etch mask layer (22), the image subsequently employed to modulate a second exposure generated by the multiple beam interferometric lithography technique. Periodic surface relief structures (80) patterned by the second exposure and formed after development of the exposed photoresist material, are restricted to regions (52) defined by the initial exposure, with the photoresist material (54) outside these regions remaining unmodulated, or devoid of the periodic structures (80), and suitable for use as a mask in a subsequent etching process.
摘要翻译：公开了双曝光过程，由此通过常规光刻技术产生的第一次曝光在光致抗蚀剂蚀刻掩模层（22）中产生潜在负像，随后采用该图像来调制由多光束干涉光刻技术产生的第二曝光。通过曝光的光致抗蚀剂材料显影之后形成的通过第二曝光形成的周期性表面浮雕结构（80）被限于由初始曝光限定的区域（52），光致抗蚀剂材料（54）在这些区域之外保持未调制或缺失的周期性结构（80），并且适于在随后的蚀刻工艺中用作掩模。

4. 发明申请

WO1997043696A1 METHODS TO INCREASE THE EXPOSURE SENSITIVITY OF PHOTOPOLYMERIZABLE MATRICES AND APPARATUS USEFUL THEREFOR 审中-公开
标题翻译：提高光热可饱和矩阵的曝光灵敏度的方法及其有用的装置
公开(公告)号：WO1997043696A1
公开(公告)日：1997-11-20
申请号：PCT/US1997007789
申请日：1997-05-06
申请人： NAPP SYSTEMS, INC.
发明人： NAPP SYSTEMS, INC. , MUELLER, Gregory, E. , MALE, Mitch, G. , ROBERTS, David, H.
IPC分类号： G03F07/20
CPC分类号： G03F7/2022
摘要： In accordance with the present invention, there are provided methods to substantially increase the effective exposure sensitivity of photopolymerizable materials without chemical modification thereof. This is accomplished by subjecting such materials to a relatively low energy pre-exposure prior to subjecting such materials to the main imaging exposure. Increase in the effective exposure sensitivity of photopolymerizable materials provides improved image quality in the exposed matrix and allows increased exposure speeds to be employed. In accordance with another aspect of the present invention, there are provided imaging apparatus useful for carrying out the above-described process. Invention apparatus enable one to increase the effective exposure sensitivity of photopolymerizable materials.
摘要翻译：根据本发明，提供了在不进行化学改性的情况下大幅提高可光聚合材料的有效曝光灵敏度的方法。这是通过在对这些材料进行主要成像曝光之前对这种材料进行相对低能量的预曝光来实现的。可光聚合材料的有效曝光灵敏度的提高提高了曝光基质中的图像质量，并允许提高使用的曝光速度。根据本发明的另一方面，提供了可用于执行上述处理的成像装置。本发明装置能够增加可光聚合材料的有效曝光灵敏度。

5. 发明申请

WO1997037283A1 LITHOGRAPHIC SCANNING EXPOSURE PROJECTION APPARATUS 审中-公开
标题翻译：光栅扫描曝光投影设备
公开(公告)号：WO1997037283A1
公开(公告)日：1997-10-09
申请号：PCT/IB1997000297
申请日：1997-03-25
申请人： ASM LITHOGRAPHY B.V.
发明人： ASM LITHOGRAPHY B.V. , STRAAIJER, Alexander , DE JAGER, Ronald, André, Maria
IPC分类号： G03F07/20
CPC分类号： G03F7/70058 , G03F7/70358 , G03F7/70558 , G03F7/70808
摘要： A lithographic scanning exposure projection apparatus is provided with a radiation source (1) providing radiation pulses, a lens system (3, 7), a mask (5), imaged onto a substrate (9) and scanning means (10) for scanning an image of an exit window (2) of the radiation source at a scanning speed over the substrate (9). A controller (13) controls both the energy of the radiation pulses and the scanning speed in dependence on the required exposure dose on the substrate and the repetition rate of the radiation pulses. The controller ensures maximum throughput of substrates through the apparatus and a minimum dose non-uniformity on the substrates.
摘要翻译：光刻扫描曝光投影装置设置有提供辐射脉冲的辐射源（1），成像在基板（9）上的透镜系统（7,7），掩模（5）和扫描装置（10）在基板（9）上的扫描速度的辐射源的出射窗（2）的图像。控制器（13）根据衬底上所需的曝光剂量和辐射脉冲的重复率来控制辐射脉冲的能量和扫描速度两者。控制器确保通过设备的基板的最大吞吐量和基板上的最小剂量不均匀性。

6. 发明申请

WO1996029630A2 SCANNING LITHOGRAPHY SYSTEM HAVING DOUBLE PASS WYNNE-DYSON OPTICS 审中-公开
标题翻译：具有双通道WYNNE-DYSON OPTICS的扫描光刻系统
公开(公告)号：WO1996029630A2
公开(公告)日：1996-09-26
申请号：PCT/US1996003298
申请日：1996-03-19
申请人： ETEC SYSTEMS, INC.
发明人： ETEC SYSTEMS, INC. , ALLEN, Paul, C.
IPC分类号： G03F07/20
CPC分类号： G02B17/0892 , G02B17/008 , G02B17/08 , G03F7/70225 , G03F7/70275 , G03F7/70358
摘要： A small field scanning photolithography system (700) has a double pass Wynne-Dyson optical system (770) which provides an erect, non-reverted, unmagnified image. An optical path through the system passes from an object (722), reflects off an input reflector (731), passes through a first quadrant of a lens (740), reflects off a concave mirror (750), passes through a second quadrant of lens (740) into folding optics (732) where an intermediate image forms, passes from folding optics (732) through a third quadrant of lens (740), reflects off concave mirror (750) a second time, passes through a fourth quadrant of lens (740), and finally reflects off an output reflector (733) to a plane (160) where a final image (362) forms. Typically, input and output reflectors (731, 733) and the folding optics (732) are prisms. A field stop (760) may be provided in folding optics (732) where the intermediate image forms. Magnification adjusting optics (710, 720) can be added to input and output prisms (731, 733) or to folding optics (732). The magnification adjusting optics (710, 720) forms two narrow meniscus air gaps (713, 723) which are equal size for unity magnification. Narrowing one air gap (713 or 723) and widening the other air gap (723 or 713) changes magnification slightly.
摘要翻译：小场扫描光刻系统（700）具有双通道Wynne-Dyson光学系统（770），其提供直立的，未回复的非放大图像。通过系统的光路从物体（722）通过，从输入反射器（731）反射，穿过透镜的第一象限（740），从凹面镜（750）反射，穿过第二象限透镜（740）进入中间图像形成的折叠光学器件（732），从折叠光学器件（732）穿过透镜的第三象限（740），第二次反射出凹面镜（750），穿过第四象限透镜（740），并且最终从输出反射器（733）反射到形成最终图像（362）的平面（160）。通常，输入和输出反射器（731,733）和折叠光学器件（732）是棱镜。可以在形成中间图像的折叠光学器件（732）中提供场停止器（760）。可以将放大调整光学元件（710,720）添加到输入和输出棱镜（731,733）或折叠光学器件（732）。倍率调节光学器件（710,720）形成两个相同尺寸的窄弯液面气隙（713,723），用于单位放大。缩小一个气隙（713或723）并加宽另一个气隙（723或713）稍微改变放大倍数。

7. 发明申请

WO1993022711A1 ADAPTIVE OPTIC WAFER STEPPER ILLUMINATION SYSTEM 审中-公开
标题翻译：自适应光学平移式照明系统
公开(公告)号：WO1993022711A1
公开(公告)日：1993-11-11
申请号：PCT/US1992003998
申请日：1992-05-07
申请人： LITEL INSTRUMENTS
发明人： LITEL INSTRUMENTS , MacDONALD, Bruce, G. , HUNTER, Robert, O., Jr. , SMITH, Adlai, H.
IPC分类号： G03F07/20
CPC分类号： G03F7/70233 , G03F7/70266
摘要： The illumination system for a semiconductor wafer stepper includes reflective elements within the projection optics of a primary mirror (10), a secondary mirror (8), a deformable mirror (6) and a beamsplitter (4). The beamsplitter directs light reflected from the wafer surface (24) back into an interferometer camera to provide depth of focus and aberration information to a computer (16) which activates and selectively deforms the deformable mirror (6). Light, input from a mercury arc lamp or laser source, is projected either with an expanded or scanned beam through a reticle (20) which is printed with the pattern to be transferred to the wafer. An interferometer is included to combine light reflected from the wafer surface with a portion of the incoming light at the beamsplitter. The interference pattern formed by that combination is used by the computer to provide real-time manipulation of focus errors, vibration and aberration by deformation of the deformable mirror. The deformable mirror and interferometer system is also applicable to folded beam refractive optic illumination systems and pure refractive optic systems in which a detour is made within the optical train to access the deformable mirror.
摘要翻译：用于半导体晶片步进器的照明系统包括主镜（10），副镜（8），可变形反射镜（6）和分束器（4）的投影光学器件内的反射元件。分束器将从晶片表面（24）反射的光引导回到干涉仪相机中以向计算机（16）提供焦点深度和像差信息，从而激活并选择性地使可变形反射镜（6）变形。来自水银弧光灯或激光源的光线通过扩展的或扫描的光束投射通过掩模版（20），该掩模版（20）被打印以转印到晶片上。包括干涉仪以将从晶片表面反射的光与分束器处的入射光的一部分组合。由该组合形成的干涉图案由计算机用于通过可变形反射镜的变形来实时地处理聚焦误差，振动和像差。可变形反射镜和干涉仪系统也可用于折叠光束折射光学照明系统和纯折射光学系统，其中在光学系列内形成绕行线以接近可变形反射镜。

8. 发明申请

WO1993020482A1 METHOD FOR FORMING A LITHOGRAPHIC PATTERN IN A PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICES 审中-公开
标题翻译：在制造半导体器件的过程中形成图形图案的方法
公开(公告)号：WO1993020482A1
公开(公告)日：1993-10-14
申请号：PCT/US1993003126
申请日：1993-03-29
申请人： MICROUNITY SYSTEMS ENGINEERING, INC.
发明人： MICROUNITY SYSTEMS ENGINEERING, INC. , CHEN, Jang, Fung , MATTHEWS, James, A.
IPC分类号： G03F07/20
CPC分类号： G03F7/70466 , G03F7/2022
摘要： A method of printing a sub-resolution device feature (16) having first and second edges spaced in close proximity to one another on a semiconductor substrate (20) includes the steps of first depositing a radiation-sensitive material on the substrate, then providing a first mask image segment (11) which corresponds to the first edge. The first mask image segment is then exposed with radiation (10) using an imaging tool (12) to produce a first pattern edge gradient (14). The first pattern edge gradient defines the first edge of the feature in the material. A second mask image segment (13) is then provided corresponding to the second feature edge. This second mask image segment is exposed to radiation (10) to produce a second pattern edge gradient (17) which defines the second edge of the feature. Once the radiation-sensitive material has been developed, the two-dimensional feature is reproduced on the substrate.
摘要翻译：印刷具有在半导体衬底（20）上彼此靠近彼此间隔开的第一和第二边缘的子分辨率器件特征（16）的方法包括以下步骤：首先在衬底上沉积辐射敏感材料，然后提供第一掩模图像段（11），其对应于第一边缘。然后使用成像工具（12）用辐射（10）将第一掩模图像段曝光以产生第一图案边缘梯度（14）。第一个图案边缘渐变定义材料中特征的第一个边缘。然后对应于第二特征边缘提供第二掩模图像段（13）。该第二掩模图像段暴露于辐射（10）以产生限定特征的第二边缘的第二图案边缘梯度（17）。一旦辐射敏感材料已经开发出来，二维特征就在基片上再现。

9. 发明申请

WO1993000614A1 SMALL FIELD SCANNER 审中-公开
标题翻译：小型扫描仪
公开(公告)号：WO1993000614A1
公开(公告)日：1993-01-07
申请号：PCT/US1992004135
申请日：1992-05-15
申请人： ETEC SYSTEMS, INC.
发明人： ETEC SYSTEMS, INC. , ALLEN, Paul, C.
IPC分类号： G03F07/20
CPC分类号： G03F7/70058 , G03F7/70258 , G03F7/70358 , G03F7/70475 , G03F7/70725
摘要： A method and apparatus for printing arbitrarily large circuit patterns using small field optics. The use of small field imaging optics (110, 111) allows the use of high NA lens designs capable of printing smaller geometries than otherwise would be possible. The field size in a first axis is extended by scanning an object and image past the lens; the field size in a second axis is extended by stitching the scans together in an overlapped fashion. This overlapped printing technique averages many random and systematic errors and allows the placement of field adjacencies within die boundaries. The effective field size of such a system is limited only by reticle and size stage mechanics (109a, 113a). The apparatus further includes error correction loops for enhancing stage synchronization accuracy and for reducing field adjacency errors.

10. 发明申请

WO1991014973A1 MIRRORS 审中-公开
标题翻译：镜子
公开(公告)号：WO1991014973A1
公开(公告)日：1991-10-03
申请号：PCT/GB1991000440
申请日：1991-03-22
申请人： NATIONAL RESEARCH DEVELOPMENT CORPORATION , ROSSER, Roy, Jonathan
发明人： NATIONAL RESEARCH DEVELOPMENT CORPORATION
IPC分类号： G03F07/20
CPC分类号： G03F7/70008 , G03F7/7015 , G03F7/702
摘要： A mirror collimating arrangement for a beam of radiation comprises a plurality of saddle-toroid-shaped reflecting surfaces (1) wherein the dimensions of the major and minor radii (R, e) of said reflecting surfaces are selected so that the change in reflectivity with angle is substantially complementary to the inhomogeneity of the cross-sectional shape (12) of the beam.

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