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1. 发明申请

WO2008127452A2 GLUE LAYER FOR HYDROFLUOROCARBON ETCH 审中-公开
标题翻译：石油醚水合物
公开(公告)号：WO2008127452A2
公开(公告)日：2008-10-23
申请号：PCT/US2007/086419
申请日：2007-12-04
申请人： LAM RESEARCH CORPORATION , KIM, Ji Soo , LEE, Sangheon , GUPTA, Deepak K. , SADJADI, S.M. Reza
发明人： KIM, Ji Soo , LEE, Sangheon , GUPTA, Deepak K. , SADJADI, S.M. Reza
IPC分类号： H01L21/3065
CPC分类号： H01L21/31144 , H01L21/30655 , H01L21/31116 , H01L21/312
摘要： A method for etching features in an etch layer disposed below a mask on a process wafer is provided. A hydrocarbon based glue layer is deposited. The etch layer on the process wafer is etched with at least one cycle, wherein each cycle comprises depositing a hydrofluorocarbon layer over the mask and on the hydrocarbon based glue layer, wherein the hydrocarbon based glue layer increases adhesion of the hydrofluorocarbon layer and etching the etch layer.
摘要翻译：提供了一种用于蚀刻设置在处理晶片上的掩模下方的蚀刻层中的特征的方法。沉积烃基胶层。用至少一个循环蚀刻处理晶片上的蚀刻层，其中每个循环包括在掩模上和基于烃的胶层上沉积氢氟烃层，其中基于烃的胶层增加氢氟烃层的粘附和蚀刻蚀刻层。

2. 发明申请

WO2007064499A1 SELF-ALIGNED PITCH REDUCTION 审中-公开
标题翻译：自对准减法
公开(公告)号：WO2007064499A1
公开(公告)日：2007-06-07
申请号：PCT/US2006/044708
申请日：2006-11-17
申请人： LAM RESEARCH CORPORATION , KIM, Ji Soo , LEE, Sangheon , CHOI, Daehan , SADJADI, S.M. Reza
发明人： KIM, Ji Soo , LEE, Sangheon , CHOI, Daehan , SADJADI, S.M. Reza
IPC分类号： H01L21/033 , H01L21/28 , H01L21/82
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/31144
摘要： A method providing features in a etch layer is provided. A sacrificial layer is formed over the etch layer. A set of sacrificial layer features is etched into the sacrificial layer. A first set of etch layer features is etched into the etch layer through the sacrificial layer. The first set of etch layer features and the set of sacrificial layer features are filled with a filler material. The sacrificial layer is removed. The widths of the spaces between the parts of the filler material are shrunk with a shrink sidewall deposition. A second set of etch layer features is etched into the etch layer through the shrink sidewall deposition. The filler material and shrink sidewall deposition are removed.
摘要翻译：提供了一种在蚀刻层中提供特征的方法。在蚀刻层上形成牺牲层。一组牺牲层特征被蚀刻到牺牲层中。第一组蚀刻层特征通过牺牲层蚀刻到蚀刻层中。第一组蚀刻层特征和一组牺牲层特征用填充材料填充。牺牲层被去除。填充材料的各部分之间的间隙的宽度随收缩侧壁沉积而收缩。通过收缩侧壁沉积将第二组蚀刻层特征蚀刻到蚀刻层中。去除填充材料和收缩侧壁沉积。

3. 发明申请

WO2007094957A1 INFINITELY SELECTIVE PHOTORESIST MASK ETCH 审中-公开
标题翻译：无限选择性光电隔离膜
公开(公告)号：WO2007094957A1
公开(公告)日：2007-08-23
申请号：PCT/US2007/002511
申请日：2007-01-30
申请人： LAM RESEARCH CORPORATION , KIM, Ji Soo , CIRIGLIANO, Peter , LEE, Sangheon , HEO, Dongho , CHOI, Daehan , SADJADI, S.M. Reza
发明人： KIM, Ji Soo , CIRIGLIANO, Peter , LEE, Sangheon , HEO, Dongho , CHOI, Daehan , SADJADI, S.M. Reza
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01L21/30655
摘要： A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.
摘要翻译：提供了一种用于将特征蚀刻到设置在不具有中间硬掩模的光致抗蚀剂掩模下方的蚀刻层中的方法。提供多个蚀刻循环。每个蚀刻循环包括提供沉积蚀刻阶段，其将特征蚀刻到蚀刻层中并将聚合物沉积在特征的侧壁上并在光致抗蚀剂上方，并提供去除沉积在侧壁上的聚合物的清洁相。

4. 发明申请

WO2010033434A2 SIDEWALL FORMING PROCESSES 审中-公开
标题翻译：侧壁成形工艺
公开(公告)号：WO2010033434A2
公开(公告)日：2010-03-25
申请号：PCT/US2009/056716
申请日：2009-09-11
申请人： LAM RESEARCH CORPORATION , CIRIGLIANO, Peter , ZHU, Helen , KIM, Ji Soo , SADJADI, S.M. Reza
发明人： CIRIGLIANO, Peter , ZHU, Helen , KIM, Ji Soo , SADJADI, S.M. Reza
IPC分类号： H01L21/3065
CPC分类号： H01L21/0337 , H01L21/31144 , H01L21/312
摘要： An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.
摘要翻译：提供在图案化的光刻胶掩模下面的蚀刻层。执行多个侧壁形成过程。每个侧壁形成过程包括通过执行多次循环沉积而在图案化的光刻胶掩模上沉积保护层。每个循环沉积至少包括用于在图案化的光刻胶掩模的表面上沉积沉积层的沉积阶段和用于在沉积层中成形垂直表面的轮廓成形阶段。每个侧壁形成工艺还包括用于选择性地蚀刻保护层相对于保护层的垂直表面的水平表面的突破蚀刻。之后，蚀刻蚀刻层以形成具有小于图案化光刻胶掩模中的特征的临界尺寸的临界尺寸的特征。

5. 发明申请

WO2009140172A3 SELECTIVE INDUCTIVE DOUBLE PATTERNING 审中-公开
公开(公告)号：WO2009140172A3
公开(公告)日：2009-11-19
申请号：PCT/US2009/043370
申请日：2009-05-08
申请人： LAM RESEARCH CORPORATION , SADJADI, S.M. Reza
发明人： SADJADI, S.M. Reza
IPC分类号： H01L21/3065 , H05H1/34 , H01L21/027 , G03F7/20
摘要： An inductively coupled power (ICP) plasma processing chamber for forming semiconductor features is provided. A plasma processing chamber is provided, comprising a vacuum chamber, at least one antenna adjacent to the vacuum chamber for providing inductively coupled power in the vacuum chamber, a substrate support for supporting a silicon substrate within the plasma processing chamber, a pressure regulator, a gas inlet for providing gas into the plasma processing chamber, and a gas outlet for exhausting gas from the plasma processing chamber. A gas distribution system is in fluid connection with the gas inlet for providing a first gas and a second gas, wherein the gas distribution system can substantially replace one of the first gas and the second gas in the plasma zone with the other of the first gas and the second gas within a period of less than 5 seconds.

6. 发明申请

WO2008157018A1 MINIMIZATION OF MASK UNDERCUT ON DEEP SILICON ETCH 审中-公开
标题翻译：最小化深层硅蚀刻掩模
公开(公告)号：WO2008157018A1
公开(公告)日：2008-12-24
申请号：PCT/US2008/065578
申请日：2008-06-02
申请人： LAM RESEARCH CORPORATION , PANDHUMSOPORN, Tamarak , CHUNG, Patrick , SETO, Jackie , SADJADI, S.M. Reza
发明人： PANDHUMSOPORN, Tamarak , CHUNG, Patrick , SETO, Jackie , SADJADI, S.M. Reza
IPC分类号： H01L21/3065
CPC分类号： H01L21/3086 , H01L21/31138
摘要： A method for forming features in a silicon layer is provided. A mask is formed with a plurality of mask openings over the silicon layer. A polymer layer is deposited over the mask by flowing a hydrogen free deposition gas comprising C4F8, forming a plasma from the deposition gas, depositing a polymer from the plasma for at least 20 seconds, and stopping the depositing the polymer after the at least 20 seconds. The deposited polymer layer is opened by flowing an opening gas, forming a plasma from the opening gas which selectively removes the deposited polymer on bottoms of the plurality of mask openings with respect to deposited polymer on sides of the plurality of mask openings, and stopping the opening when at least some of the plurality of mask features are opened. The silicon layer is etched through the mask and deposited polymer layer.
摘要翻译：提供了一种在硅层中形成特征的方法。在硅层上形成有多个掩模开口的掩模。通过使包含C4F8的无氢沉积气体从沉积气体形成等离子体，从等离子体沉积聚合物至少20秒，并在至少20秒后停止沉积聚合物，沉积聚合物层。沉积的聚合物层通过流动开口气体而打开，从开口气体形成等离子体，其在多个掩模开口的侧面上相对于沉积的聚合物选择性地去除多个掩模开口的底部上沉积的聚合物，并且停止当多个掩模特征中的至少一些被打开时打开。通过掩模蚀刻硅层并沉积聚合物层。

7. 发明申请

WO2007041423A9 VERTICAL PROFILE FIXING 审中-公开
公开(公告)号：WO2007041423A9
公开(公告)日：2007-04-12
申请号：PCT/US2006/038299
申请日：2006-09-29
申请人： LAM RESEARCH CORPORATION , SADJADI, S.M. Reza , CIRIGLIANO, Peter , KIM, Jisoo , HUANG, Zhisong , HUDSON, Eric A.
发明人： SADJADI, S.M. Reza , CIRIGLIANO, Peter , KIM, Jisoo , HUANG, Zhisong , HUDSON, Eric A.
IPC分类号： H01L21/311 , H01L21/027 , G03F7/40
摘要： A method for etching features in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have irregular profiles along depths of the photoresist features. The irregular profiles along the depths of the photoresist features of the sidewalls of the photoresist features are corrected comprising at least one cycle, where each cycle comprises a sidewall deposition phase and a profile shaping phase. Feature is etched into the etch layer through the photoresist features. The mask is removed.

8. 发明申请

WO2008045764A1 DE-FLUORIDATION PROCESS 审中-公开
标题翻译：脱氟方法
公开(公告)号：WO2008045764A1
公开(公告)日：2008-04-17
申请号：PCT/US2007/080455
申请日：2007-10-04
申请人： LAM RESEARCH CORPORATION , HEO, Dongho , KIM, Jisoo , SADJADI, S.M. Reza
发明人： HEO, Dongho , KIM, Jisoo , SADJADI, S.M. Reza
IPC分类号： H01L21/306 , H01L21/312
CPC分类号： H01L21/76816 , H01L21/0212 , H01L21/02274 , H01L21/0234 , H01L21/0271 , H01L21/0337 , H01L21/0338 , H01L21/31058 , H01L21/31138 , H01L21/3127 , H01L21/32139
摘要： A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A fluorine-containing conformal layer is deposited over the sidewalls of the photoresist features to reduce the critical dimensions of the photoresist features. Fluorine is removed from the conformal layer, while the remaining conformal layer is left in place. Features are etched into the layer, wherein the layer features have a second critical dimension, which is less than the first critical dimension.
摘要翻译：提供了一个图层中的一个特征。在该层上形成光致抗蚀剂层。图案化光致抗蚀剂层以形成具有光致抗蚀剂侧壁的光致抗蚀剂特征，其中光刻胶特征具有第一临界尺寸。在光致抗蚀剂特征的侧壁上沉积含氟共形层，以减少光致抗蚀剂特征的临界尺寸。氟从保形层去除，而剩余的保形层留在原位。将特征蚀刻到层中，其中层特征具有小于第一临界尺寸的第二临界尺寸。

9. 发明申请

WO2009099769A2 DOUBLE MASK SELF-ALIGNED DOUBLE PATTERNING TECHNOLOGY (SADPT) PROCESS 审中-公开
标题翻译：双面罩自对准双重图案工艺（SADPT）工艺
公开(公告)号：WO2009099769A2
公开(公告)日：2009-08-13
申请号：PCT/US2009/031713
申请日：2009-01-22
申请人： LAM RESEARCH CORPORATION , SADJADI, S.M. Reza , LI, Lumin , ROMANO, Andrew, R.
发明人： SADJADI, S.M. Reza , LI, Lumin , ROMANO, Andrew, R.
IPC分类号： H01L21/027
CPC分类号： H01L21/0337
摘要： A method for providing features in an etch layer is provided by forming an organic mask layer over the inorganic mask layer, forming a silicon-containing mask layer over the organic mask layer, forming a patterned mask layer over the silicon-containing mask layer, etching the silicon-containing mask layer through the patterned mask, depositing a polymer over the etched silicon-containing mask layer, depositing a silicon-containing film over the polymer, planarizing the silicon-containing film, selectively removing the polymer leaving the silicon-containing film, etching the organic layer, and etching the inorganic layer.
摘要翻译：通过在无机掩模层上形成有机掩模层，在有机掩模层上形成含硅掩模层，在掩模层上方形成图案化掩模层来提供用于在蚀刻层中提供特征的方法所述含硅掩模层，通过所述图案化掩模蚀刻所述含硅掩模层，在所述蚀刻的含硅掩模层上沉积聚合物，在所述聚合物上沉积含硅膜，平坦化所述含硅膜，选择性地去除离开含硅膜的聚合物，蚀刻有机层和蚀刻无机层。

10. 发明申请

WO2009085598A2 PHOTORESIST DOUBLE PATTERNING 审中-公开
标题翻译：光子雕刻双重图案
公开(公告)号：WO2009085598A2
公开(公告)日：2009-07-09
申请号：PCT/US2008/086095
申请日：2008-12-09
申请人： LAM RESEARCH CORPORATION , SADJADI, S.M. Reza , ROMANO, Andrew, R.
发明人： SADJADI, S.M. Reza , ROMANO, Andrew, R.
IPC分类号： H01L21/027 , H01L21/30
CPC分类号： G03F7/40 , G03F7/0035 , G03F7/405 , H01L21/76816
摘要： A method for etching an etch layer formed on a substrate is provided. A first photoresist (PR) mask with first mask features is provided on the etch layer. A protective coating is provided on the first PR mask by a process including at least one cycle. Each cycle includes (a) a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas, and (b) a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas. A liquid PR material is applied over the first PR mask having the protective coating. The PR material is patterned into a second mask features, where the first and second mask features form a second PR mask. The etch layer is etched though the second PR mask.
摘要翻译：提供了一种用于蚀刻形成在基板上的蚀刻层的方法。在蚀刻层上提供具有第一掩模特征的第一光致抗蚀剂（PR）掩模。通过包括至少一个循环的过程在第一PR掩模上提供保护涂层。每个循环包括（a）沉积阶段，用于使用沉积气体在第一掩模特征的表面上沉积沉积层，以及（b）用于使用成形气体成形沉积层的轮廓的成形阶段。将液体PR材料施加在具有保护涂层的第一PR掩模上。 PR材料被图案化为第二掩模特征，其中第一掩模特征和第二掩模特征形成第二PR掩模。蚀刻层通过第二个PR掩模进行蚀刻。

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