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1. 发明申请

WO2007064499A1 SELF-ALIGNED PITCH REDUCTION 审中-公开
标题翻译：自对准减法
公开(公告)号：WO2007064499A1
公开(公告)日：2007-06-07
申请号：PCT/US2006/044708
申请日：2006-11-17
申请人： LAM RESEARCH CORPORATION , KIM, Ji Soo , LEE, Sangheon , CHOI, Daehan , SADJADI, S.M. Reza
发明人： KIM, Ji Soo , LEE, Sangheon , CHOI, Daehan , SADJADI, S.M. Reza
IPC分类号： H01L21/033 , H01L21/28 , H01L21/82
CPC分类号： H01L21/0338 , H01L21/0337 , H01L21/31144
摘要： A method providing features in a etch layer is provided. A sacrificial layer is formed over the etch layer. A set of sacrificial layer features is etched into the sacrificial layer. A first set of etch layer features is etched into the etch layer through the sacrificial layer. The first set of etch layer features and the set of sacrificial layer features are filled with a filler material. The sacrificial layer is removed. The widths of the spaces between the parts of the filler material are shrunk with a shrink sidewall deposition. A second set of etch layer features is etched into the etch layer through the shrink sidewall deposition. The filler material and shrink sidewall deposition are removed.
摘要翻译：提供了一种在蚀刻层中提供特征的方法。在蚀刻层上形成牺牲层。一组牺牲层特征被蚀刻到牺牲层中。第一组蚀刻层特征通过牺牲层蚀刻到蚀刻层中。第一组蚀刻层特征和一组牺牲层特征用填充材料填充。牺牲层被去除。填充材料的各部分之间的间隙的宽度随收缩侧壁沉积而收缩。通过收缩侧壁沉积将第二组蚀刻层特征蚀刻到蚀刻层中。去除填充材料和收缩侧壁沉积。

2. 发明申请

WO2007094957A1 INFINITELY SELECTIVE PHOTORESIST MASK ETCH 审中-公开
标题翻译：无限选择性光电隔离膜
公开(公告)号：WO2007094957A1
公开(公告)日：2007-08-23
申请号：PCT/US2007/002511
申请日：2007-01-30
申请人： LAM RESEARCH CORPORATION , KIM, Ji Soo , CIRIGLIANO, Peter , LEE, Sangheon , HEO, Dongho , CHOI, Daehan , SADJADI, S.M. Reza
发明人： KIM, Ji Soo , CIRIGLIANO, Peter , LEE, Sangheon , HEO, Dongho , CHOI, Daehan , SADJADI, S.M. Reza
IPC分类号： H01L21/311
CPC分类号： H01L21/31116 , H01L21/30655
摘要： A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.
摘要翻译：提供了一种用于将特征蚀刻到设置在不具有中间硬掩模的光致抗蚀剂掩模下方的蚀刻层中的方法。提供多个蚀刻循环。每个蚀刻循环包括提供沉积蚀刻阶段，其将特征蚀刻到蚀刻层中并将聚合物沉积在特征的侧壁上并在光致抗蚀剂上方，并提供去除沉积在侧壁上的聚合物的清洁相。

3. 发明申请

WO2008060840A1 REMOVABLE SPACER 审中-公开
标题翻译：可拆卸间隔
公开(公告)号：WO2008060840A1
公开(公告)日：2008-05-22
申请号：PCT/US2007/082723
申请日：2007-10-26
申请人： LAM RESEARCH CORPORATION , KIM, Ji Soo , CHIANG, Conan , CHOI, Daehan , SADJADI, S.m. Reza , GOSS, Michael
发明人： KIM, Ji Soo , CHIANG, Conan , CHOI, Daehan , SADJADI, S.m. Reza , GOSS, Michael
IPC分类号： H01L21/336
CPC分类号： H01L29/6659 , H01L29/6653 , H01L29/6656 , H01L29/7833 , H01L29/7843
摘要： A method for forming semiconductor devices is provided. A gate stack is formed over a surface of a substrate. A plurality of cycles for forming polymer spacers on sides of the gate stack is provided, where each cycle comprises providing a deposition phase that deposits material on the sides of the polymer spacer and over the surface of the substrate, and providing a cleaning phase that removes polymer over the surface of the substrate and shapes a profile of the deposited material. Dopant is implanted into the substrate using the polymer spacers as a dopant mask. The polymer spacers are removed.
摘要翻译：提供了一种用于形成半导体器件的方法。栅极堆叠形成在衬底的表面上。提供了用于在栅极叠层的侧面上形成聚合物间隔物的多个循环，其中每个循环包括提供沉积相，其沉积材料在聚合物间隔物的侧面上并在基底的表面上，并提供清除相聚合物在基材的表面上并且形成沉积材料的轮廓。使用聚合物间隔物作为掺杂剂掩模将掺杂剂注入到衬底中。去除聚合物间隔物。

4. 发明申请

WO2008127452A2 GLUE LAYER FOR HYDROFLUOROCARBON ETCH 审中-公开
标题翻译：石油醚水合物
公开(公告)号：WO2008127452A2
公开(公告)日：2008-10-23
申请号：PCT/US2007/086419
申请日：2007-12-04
申请人： LAM RESEARCH CORPORATION , KIM, Ji Soo , LEE, Sangheon , GUPTA, Deepak K. , SADJADI, S.M. Reza
发明人： KIM, Ji Soo , LEE, Sangheon , GUPTA, Deepak K. , SADJADI, S.M. Reza
IPC分类号： H01L21/3065
CPC分类号： H01L21/31144 , H01L21/30655 , H01L21/31116 , H01L21/312
摘要： A method for etching features in an etch layer disposed below a mask on a process wafer is provided. A hydrocarbon based glue layer is deposited. The etch layer on the process wafer is etched with at least one cycle, wherein each cycle comprises depositing a hydrofluorocarbon layer over the mask and on the hydrocarbon based glue layer, wherein the hydrocarbon based glue layer increases adhesion of the hydrofluorocarbon layer and etching the etch layer.
摘要翻译：提供了一种用于蚀刻设置在处理晶片上的掩模下方的蚀刻层中的特征的方法。沉积烃基胶层。用至少一个循环蚀刻处理晶片上的蚀刻层，其中每个循环包括在掩模上和基于烃的胶层上沉积氢氟烃层，其中基于烃的胶层增加氢氟烃层的粘附和蚀刻蚀刻层。

5. 发明申请

WO2010033434A2 SIDEWALL FORMING PROCESSES 审中-公开
标题翻译：侧壁成形工艺
公开(公告)号：WO2010033434A2
公开(公告)日：2010-03-25
申请号：PCT/US2009/056716
申请日：2009-09-11
申请人： LAM RESEARCH CORPORATION , CIRIGLIANO, Peter , ZHU, Helen , KIM, Ji Soo , SADJADI, S.M. Reza
发明人： CIRIGLIANO, Peter , ZHU, Helen , KIM, Ji Soo , SADJADI, S.M. Reza
IPC分类号： H01L21/3065
CPC分类号： H01L21/0337 , H01L21/31144 , H01L21/312
摘要： An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.
摘要翻译：提供在图案化的光刻胶掩模下面的蚀刻层。执行多个侧壁形成过程。每个侧壁形成过程包括通过执行多次循环沉积而在图案化的光刻胶掩模上沉积保护层。每个循环沉积至少包括用于在图案化的光刻胶掩模的表面上沉积沉积层的沉积阶段和用于在沉积层中成形垂直表面的轮廓成形阶段。每个侧壁形成工艺还包括用于选择性地蚀刻保护层相对于保护层的垂直表面的水平表面的突破蚀刻。之后，蚀刻蚀刻层以形成具有小于图案化光刻胶掩模中的特征的临界尺寸的临界尺寸的特征。

6. 发明申请

WO2006096528A3 STABILIZED PHOTORESIST STRUCTURE FOR ETCHING PROCESS 审中-公开
公开(公告)号：WO2006096528A3
公开(公告)日：2006-09-14
申请号：PCT/US2006/007643
申请日：2006-03-02
申请人： LAM RESEARCH CORPORATION , SADJADI, S. M. Reza , HUDSON, Eric, A. , CIRIGLIANO, Peter , KIM, Ji Soo , HUANG, Zhisong
发明人： SADJADI, S. M. Reza , HUDSON, Eric, A. , CIRIGLIANO, Peter , KIM, Ji Soo , HUANG, Zhisong
IPC分类号： H01L21/027 , G03F7/40
摘要： A method for forming features in an etch layer is provided. A first mask is formed over the etch layer where the first mask defines a plurality of spaces with widths. The first mask is laterally etched where the etched first mask defines a plurality of spaces with widths that are greater than the widths of the spaces of the first mask. A sidewall layer is formed over the etched first mask where the sidewall layer defines a plurality of spaces with widths that are less than the widths of the spaces defined by the etched first mask. Features are etched into the etch layer through the sidewall layer, where the features have widths that are smaller than the widths of the spaces defined by the etched first mask. The mask and sidewall layer are removed.

7. 发明申请

WO2006028339A1 NANO-EMULSION, THE USE THEREOF, AND PREPARATION METHOD THEREOF 审中-公开
标题翻译：纳米乳液，其用途及其制备方法
公开(公告)号：WO2006028339A1
公开(公告)日：2006-03-16
申请号：PCT/KR2005/002929
申请日：2005-09-03
申请人： KIM, Young Dae , PARK, Keun Ja , KIM, Jung Soo , KIM, Ji Soo
发明人： KIM, Young Dae , PARK, Keun Ja , KIM, Jung Soo , KIM, Ji Soo
IPC分类号： A61K9/113
CPC分类号： B82Y5/00 , A61K8/062 , A61K8/678 , A61K8/8147 , A61K8/90 , A61K9/1075 , A61K2800/21 , A61K2800/413 , A61Q19/00 , A61Q19/02 , A61Q19/08
摘要： The present invention relates to nanoemulsions, the use thereof and preparation method thereof wherein, nanoemulsions contain polyoxypropylene-polyoxyethylene vitamin E as emulsifiers and polyacrylic acid or polyacrylic acid derivative crosspolymers as emulsion assistants, In the present invention nanoemulsions containing POP-POE vitamin E as emulsifiers and polyacrylic acid or polyacrylic acid derivative crosspolymers as emulsion assistants have a very small mean droplet diameter ranging from 43 to 96 nm and are very stable and safe. By using the nanoemulsions described above the inventors prepared nanoemulsion cosmetic compositions with a much smaller mean droplet diameter than nanoemulsions prepared only with emulsifiers, polyoxypropylene-polyoxycthylcne vitamin E. The nanoemulsion cosmetic compositions in the present invention have good effects such as skin softening, skin moisturizing, improving dry atopy skin, skin firming and good spreadability when applied on the skin. Particularly, nanoemulsion skin treating compositions in present invention have an advantage of having a long lasting effect of skin treating due to the favorable penetration of active drug components into the skin.
摘要翻译：本发明涉及纳米乳剂，其用途及其制备方法，其中纳米乳剂含有聚氧丙烯 - 聚氧乙烯维生素E作为乳化剂，聚丙烯酸或聚丙烯酸衍生物交联聚合物作为乳液助剂。在本发明中，含有POP-POE维生素E作为乳化剂的纳米乳剂并且作为乳液助剂的聚丙烯酸或聚丙烯酸衍生物交联聚合物具有43至96nm的非常小的平均液滴直径，并且非常稳定和安全。通过使用上述纳米乳剂，本发明人制备了纳米乳液化妆品组合物，其平均液滴直径小于仅用乳化剂，聚氧丙烯 - 聚氧辛烯维生素E制备的纳米乳液。本发明的纳米乳液化妆品组合物具有良好的效果，例如皮肤软化，皮肤保湿改善干性特应性皮肤，皮肤紧致和涂抹在皮肤上时的良好的铺展性。特别地，本发明的纳米乳剂皮肤处理组合物具有由于活性药物成分渗透到皮肤中而具有持久的皮肤处理效果的优点。

8. 发明申请

WO2013015503A1 SMART SOFT COMPOSITE ACTUATOR 审中-公开
标题翻译：智能柔软的复合致动器
公开(公告)号：WO2013015503A1
公开(公告)日：2013-01-31
申请号：PCT/KR2012/000603
申请日：2012-01-25
申请人： SNU R&DB FOUNDATION , AHN, Sung Hoon , KIM, Hyung Jung , LEE, Gil Yong , LEE, Kyung Tae , WU, Renzhe , KIM, Ji Soo , SONG, Sung Hyuk
发明人： AHN, Sung Hoon , KIM, Hyung Jung , LEE, Gil Yong , LEE, Kyung Tae , WU, Renzhe , KIM, Ji Soo , SONG, Sung Hyuk
IPC分类号： B25J7/00 , B25J19/00
CPC分类号： H01L41/0966 , F03G7/065 , H01L41/094 , H01L41/096
摘要： Disclosed is a smart soft composite actuator which enables user-desiring deformation by changing the position of smart material functioning as an active component, wherein the smart soft composite actuator comprises a smart material whose shape is changeable based on an external signal; and a matrix for supporting the smart material and determining an external shape, wherein the smart material is positioned inside the matrix or in a surface of the matrix, and at least one of in-plane shear deformation and out-of-plane deformation is realized by controlling the position of smart material.
摘要翻译：公开了一种智能软复合致动器，其通过改变用作有源部件的智能材料的位置来实现用户期望的变形，其中智能软复合致动器包括其形状可基于外部信号而变化的智能材料; 以及用于支撑所述智能材料并确定外部形状的矩阵，其中所述智能材料位于所述基体内或所述基体的表面内，并且实现面内剪切变形和平面外变形中的至少一个通过控制智能材料的位置。

9. 发明申请

WO2021252758A1 FLAT BOTTOM SHADOW RING 审中-公开
公开(公告)号：WO2021252758A1
公开(公告)日：2021-12-16
申请号：PCT/US2021/036802
申请日：2021-06-10
申请人： LAM RESEARCH CORPORATION
发明人： WEI, Lai , KIM, Ji Soo , MILLER, Alan, Jeffrey , THIE, William , LIN, Frank, Yun , HAN, Jun Hee Hee , LIU, Jie , CHIANG, Conan , MARTIN, Michael, John
IPC分类号： H01L21/687 , H01L21/67 , H01J37/32 , H01J37/32642 , H01L21/68721 , H01L21/68735
摘要： In some examples, a flat Bottom Shadow Ring (fBSR) is provided for processing a substrate in a processing chamber. An example fBSR comprises an overhang for covering an edge of the substrate in the processing chamber. The overhang includes a fiat zone that extends radially outward over the outer edge of the substrate.

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