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1. 发明申请

WO2008027205A3 SELF ASSEMBLED MONOLAYER FOR IMPROVING ADHESION BETWEEN COPPER AND BARRIER LAYER 审中-公开
标题翻译：自组装单层膜用于改善铜与阻隔层之间的粘附性
公开(公告)号：WO2008027205A3
公开(公告)日：2008-04-24
申请号：PCT/US2007018212
申请日：2007-08-15
申请人： LAM RES CORP , NALLA PRAVEEN , THIE WILLIAM , BOYD JOHN , ARUNAGIRI TIRUCHIRAPALLI , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ C , DORDI YEZDI
发明人： NALLA PRAVEEN , THIE WILLIAM , BOYD JOHN , ARUNAGIRI TIRUCHIRAPALLI , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ C , DORDI YEZDI
IPC分类号： C23F11/00 , H01L21/302 , H01L21/312
CPC分类号： C23C16/45525 , C23C16/18 , H01L21/288 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/76861
摘要： The embodiments fill the need enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect with good electro-migration performance and with reduced risk of stress-induce voiding of copper interconnect. Electromigration and stress-induced voiding are affected by the adhesion between the barrier layer and the copper layer. A functionalization layer is deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect. The functionalization layer forms strong bonds with barrier layer and with copper to improve adhesion property between the two layers. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, and oxidizing a surface of the metallic barrier layer. The method also includes depositing the functionalization layer over the oxidized surface of the metallic barrier layer, and depositing the copper layer in the copper interconnect structure after the funcationalization layer is deposited over the metallic barrier layer.
摘要翻译：这些实施例满足了能够在铜互连中沉积薄且共形的阻挡层以及铜层的需要，其具有良好的电迁移性能并且具有降低的应力诱发铜互连空洞的风险。电迁移和应力引起的空洞受阻挡层和铜层之间的粘附影响。功能化层沉积在阻挡层上以使铜层能够沉积在铜互连中。官能化层与阻挡层和铜形成牢固的结合，以改善两层之间的粘合性能。提供了制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层以帮助在铜互连中沉积铜层以改善铜互连的电迁移性能的示例性方法。该方法包括沉积金属阻挡层以使集成系统中的铜互连结构排成线，并且氧化金属阻挡层的表面。该方法还包括在金属阻挡层的氧化表面上沉积功能化层，并且在功能化层沉积在金属阻挡层上之后将铜层沉积在铜互连结构中。

2. 发明申请

WO2008027216A2 PROCESSES AND INTEGRATED SYSTEMS FOR ENGINEERING A SUBSTRATE SURFACE FOR METAL DEPOSITION 审中-公开
公开(公告)号：WO2008027216A2
公开(公告)日：2008-03-06
申请号：PCT/US2007018270
申请日：2007-08-17
申请人： LAM RES CORP , DORDI YEZDI , REDEKER FRITZ C , BOYD JOHN , THIE WILLIAM , ARUNAGIRI TIRUCHIRAPALLI , HOWALD ARTHUR M , YOON HYUNGSUK ALEXANDER , VERTOMMEN JOHAN
发明人： DORDI YEZDI , REDEKER FRITZ C , BOYD JOHN , THIE WILLIAM , ARUNAGIRI TIRUCHIRAPALLI , HOWALD ARTHUR M , YOON HYUNGSUK ALEXANDER , VERTOMMEN JOHAN
IPC分类号： B05D3/00 , B05D1/18 , B29C71/04 , C23C16/00
CPC分类号： H01L21/0206 , H01L21/02068 , H01L21/02074 , H01L21/28518 , H01L21/288 , H01L21/32115 , H01L21/76846 , H01L21/76849 , H01L21/76883
摘要： The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

3. 发明申请

WO2008027216A9 PROCESSES AND INTEGRATED SYSTEMS FOR ENGINEERING A SUBSTRATE SURFACE FOR METAL DEPOSITION 审中-公开
标题翻译：用于工程化金属沉积基板表面的工艺和集成系统
公开(公告)号：WO2008027216A9
公开(公告)日：2008-05-22
申请号：PCT/US2007018270
申请日：2007-08-17
申请人： LAM RES CORP , DORDI YEZDI , REDEKER FRITZ C , BOYD JOHN , THIE WILLIAM , ARUNAGIRI TIRUCHIRAPALLI , HOWALD ARTHUR M , YOON HYUNGSUK ALEXANDER , VERTOMMEN JOHAN
发明人： DORDI YEZDI , REDEKER FRITZ C , BOYD JOHN , THIE WILLIAM , ARUNAGIRI TIRUCHIRAPALLI , HOWALD ARTHUR M , YOON HYUNGSUK ALEXANDER , VERTOMMEN JOHAN
IPC分类号： C23C16/00
CPC分类号： H01L21/0206 , H01L21/02068 , H01L21/02074 , H01L21/28518 , H01L21/288 , H01L21/32115 , H01L21/76846 , H01L21/76849 , H01L21/76883
摘要： The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.
摘要翻译：这些实施例提供了产生金属对金属或硅 - 金属界面以提高电迁移性能，提供较低金属电阻率以及改善金属对金属或硅 - 金属的过程和集成系统铜互连的界面粘合。提供了一种制备衬底表面以在集成系统的铜表面上选择性地沉积钴合金材料薄层以提高铜互连的电迁移性能的示例性方法。该方法包括从集成系统中的衬底表面去除污染物和金属氧化物，并且在去除集成系统中的污染物和金属氧化物之后，使用还原环境来修复衬底表面。该方法还包括在修复基板表面之后，在集成系统中的铜互连的铜表面上选择性地沉积钴合金材料的薄层。还提供了用于实践上述示例性方法的系统。

4. 发明申请

WO2008027386A3 CONTROLLED AMBIENT SYSTEM FOR INTERFACE ENGINEERING 审中-公开
标题翻译：用于界面工程的控制环境系统
公开(公告)号：WO2008027386A3
公开(公告)日：2008-08-21
申请号：PCT/US2007018924
申请日：2007-08-28
申请人： LAM RES CORP , BOYD JOHN , DORDI YEZDI , ARUNAGIRI TIRUCHIRAPALLI , MOORING BENJAMIN W , PARKS JOHN , THIE WILLIAM , REDEKER FRITZ C , HOWALD ARTHUR M , SCHOEPP ALAN , HEMKER DAVID
发明人： BOYD JOHN , DORDI YEZDI , ARUNAGIRI TIRUCHIRAPALLI , MOORING BENJAMIN W , PARKS JOHN , THIE WILLIAM , REDEKER FRITZ C , HOWALD ARTHUR M , SCHOEPP ALAN , HEMKER DAVID
IPC分类号： H01L21/00 , H01L21/20
CPC分类号： H01L21/67184 , H01L21/67017 , H01L21/67207 , H01L21/67745
摘要： A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate
摘要翻译：一种集群架构，包括耦合到一个或多个湿式衬底处理模块的实验室环境受控传输模块。实验室环境受控传输模块和一个或多个湿衬底处理模块管理第一环境环境，其具有耦合到实验室环境控制转移模块和一个或多个等离子体处理模块真空转移模块和一个或多个等离子体处理模块管理第二周围环境。耦合到真空转移模块的受控环境转移模块和一个或多个环境处理模块管理第三环境环境因此，集群体系结构能够在第一，第二或第三环境环境中进行衬底的受控处理，以及重复相关的过渡。实施例还提供用于填充衬底的沟槽的有效方法

5. 发明申请

WO2008027214A2 METHODS AND APPARATUS FOR BARRIER INTERFACE PREPARATION OF COPPER INTERCONNECT 审中-公开
标题翻译：铜连接接口界面准备的方法和装置
公开(公告)号：WO2008027214A2
公开(公告)日：2008-03-06
申请号：PCT/US2007018250
申请日：2007-08-17
申请人： LAM RES CORP , BOYD JOHN , DORDI YEZDI , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ C
发明人： BOYD JOHN , DORDI YEZDI , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ C
IPC分类号： B05D5/12 , B05C13/02 , B05D3/00 , B29C71/04 , C23C14/00 , C23C14/32 , C23C16/00 , H05K3/00
CPC分类号： H01L21/67196 , C23C14/22 , C23C16/06 , C23C16/44 , C23C16/45544 , C23C16/52 , C23C18/1619 , C23C18/1632 , C23C18/1653 , C23C18/38 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02074 , H01L21/288 , H01L21/321 , H01L21/32115 , H01L21/32135 , H01L21/32136 , H01L21/67028 , H01L21/67161 , H01L21/67201 , H01L21/67207 , H01L21/6723 , H01L21/76807 , H01L21/76814 , H01L21/7684 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76861 , H01L21/76862 , H01L21/76873 , H01L21/76874 , H01L21/76876 , H01L21/76879
摘要： The embodiments fill the need of improving electromigration and reducing stress-induced voids of copper interconnect by enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect. The adhesion between the barrier layer and the copper layer can be improved by making the barrier layer metal-rich prior copper deposition and by limiting the amount of oxygen the barrier layer is exposed prior to copper deposition. Alternatively, a functionalization layer can be deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect with good adhesion between the barrier layer and the copper layer. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in an integrated system in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, wherein after depositing the metallic barrier layer, the substrate is transferred and processed in controlled environment to prevent the formation of metallic barrier oxide. The method also includes depositing the functionalization layer over the metallic layer in the integrated system. The method further includes depositing the copper layer in the copper interconnect structure in the integrated system after the functionalization layer is deposited over the metallic barrier layer.
摘要翻译：实施例满足了通过能够在铜互连中沉积薄且保形的阻挡层和铜层来改善电迁移并减少铜互连的应力诱导空隙的需要。阻挡层和铜层之间的粘附性可以通过在铜沉积之前使阻挡层富金属的先前铜沉积和限制阻挡层暴露的氧的量来改善。或者，功能化层可以沉积在阻挡层上，以使得铜层能够在铜互连中沉积，并且在阻挡层和铜层之间具有良好的粘合性。一种制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层的示例性方法，以帮助在集成系统中在铜互连中沉积铜层，以便改善铜互连的电迁移性能被提供。该方法包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列，其中在沉积金属阻挡层之后，将衬底在受控环境中转移和加工以防止形成金属阻挡氧化物。该方法还包括在集成系统中的金属层上沉积功能化层。该方法还包括在官能化层沉积在金属阻挡层上之后，在集成系统中的铜互连结构中沉积铜层。

6. 发明申请

WO2008027215A3 APPARATUS AND METHOD FOR INTEGRATED SURFACE TREATMENT AND DEPOSITION FOR COPPER INTERCONNECT 审中-公开
标题翻译：用于铜互连的集成表面处理和沉积的装置和方法
公开(公告)号：WO2008027215A3
公开(公告)日：2008-11-13
申请号：PCT/US2007018254
申请日：2007-08-17
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , BOYD JOHN M , KOROLIK MIKHAIL , DORDI YEZDI , REDEKER FRITZ C
发明人： YOON HYUNGSUK ALEXANDER , BOYD JOHN M , KOROLIK MIKHAIL , DORDI YEZDI , REDEKER FRITZ C
IPC分类号： C23C16/00
CPC分类号： H01L21/67207 , C23C16/0227 , C23C16/452 , C23C16/45514 , C23C16/45517 , C23C16/45551 , C23C16/56 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76868
摘要： The embodiments provide integrated apparatus and methods that perform substrate surface treatment and film deposition for copper interconnect with improved metal migration performance and reduced void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.
摘要翻译：这些实施例提供了集成设备和方法，其为铜互连执行衬底表面处理和膜沉积，具有改善的金属迁移性能和减少的空穴传播。在一个示例性实施例中，提供了用于执行表面处理和膜沉积的腔室。腔室包括用于基板表面处理的第一接近头，其配置成分配第一处理气体以处理用于基板表面处理的第一接近头下方的基板表面的一部分。腔室还包括用于原子层沉积（ALD）的第一接近头，其被配置为顺序地分配第一反应物气体和第一吹扫气体以在用于ALD的第二接近头下面沉积第一ALD膜。

7. 发明申请

WO2008002977A3 APPARATUS FOR APPLYING A PLATING SOLUTION FOR ELECTROLESS DEPOSITION 审中-公开
标题翻译：适用于电镀沉积的镀液的设备
公开(公告)号：WO2008002977A3
公开(公告)日：2008-03-06
申请号：PCT/US2007072241
申请日：2007-06-27
申请人： LAM RES CORP , DORDI YEZDI , THIE WILLIAM , BOYD JOHN M , REDEKER FRITZ C , OWCZARZ ALEKSANDER
发明人： DORDI YEZDI , THIE WILLIAM , BOYD JOHN M , REDEKER FRITZ C , OWCZARZ ALEKSANDER
IPC分类号： C23C26/00 , B05D1/18
CPC分类号： H01L21/02074 , C23C18/1628 , C23C18/38 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76883 , Y10S134/902
摘要： An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.
摘要翻译：提供无电镀室。化学镀室包括配置成支撑基板的卡盘和围绕卡盘的基部和侧壁的碗。底座具有沿着底座的内径限定的环形通道。该腔室包括连接到环形通道的排水口。排水口能够去除从卡盘收集的流体。能够清洁和基本上干燥基板的接近头包括在腔室中。还提供了一种执行化学镀操作的方法。

8. 发明申请

WO2007038256A3 APPARATUS FOR THE REMOVAL OF A METAL OXIDE FROM A SUBSTRATE AND METHODS THEREFOR 审中-公开
标题翻译：从基材上除去金属氧化物的装置及其方法
公开(公告)号：WO2007038256A3
公开(公告)日：2007-06-21
申请号：PCT/US2006036959
申请日：2006-09-22
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , THIE WILLIAM , DORDI YEZDI , BAILEY ANDREW D III
发明人： YOON HYUNGSUK ALEXANDER , THIE WILLIAM , DORDI YEZDI , BAILEY ANDREW D III
IPC分类号： B23K10/00
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/67069 , H05H1/24 , H05H1/2406 , H05H1/48 , H05H2001/2418
摘要： An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the metal oxide.
摘要翻译：公开了一种产生等离子体以从衬底去除金属氧化物的设备。该实施例包括供电电极组件，该供电电极组件包括供电电极，第一介电层以及设置在供电电极和第一介电层之间的第一金属丝网。该实施例还包括与电源电极组件相对设置的接地电极组件，以便形成产生等离子体的空腔，当等离子体存在于空腔中时，第一电介质层被等离子体与等离子体屏蔽，腔在一端具有出口以提供等离子体以去除金属氧化物。

9. 发明申请

WO2007123677A3 APPARATUS AND METHOD FOR CONFINED AREA PLANARIZATION 审中-公开
标题翻译：用于确定区域平面化的装置和方法
公开(公告)号：WO2007123677A3
公开(公告)日：2008-11-20
申请号：PCT/US2007007903
申请日：2007-03-27
申请人： LAM RES CORP , BOYD JOHN M , REDEKER FRITZ C , DORDI YEZDI , RAVKIN MICHAEL , DE LARIOS JOHN
发明人： BOYD JOHN M , REDEKER FRITZ C , DORDI YEZDI , RAVKIN MICHAEL , DE LARIOS JOHN
IPC分类号： B23H3/00 , H01L21/302 , H01L21/306 , H01L21/461
CPC分类号： H01L21/32115 , C25F7/00
摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
摘要翻译：提供接近头和相关联的使用方法用于执行半导体晶片的限制区域平坦化。邻近头包括限定为维持电解质溶液的室。在室内暴露于电解质溶液中设置阴极。阳离子交换膜设置在室的下部开口的上方。阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

10. 发明申请

WO2007028156A3 SYSTEM AND METHOD FOR FORMING PATTERNED COPPER LINES THROUGH ELECTROLESS COPPER PLATING 审中-公开
标题翻译：通过电镀铜镀层形成图案铜线的系统和方法
公开(公告)号：WO2007028156A3
公开(公告)日：2009-05-22
申请号：PCT/US2006034555
申请日：2006-08-31
申请人： LAM RES CORP , LEE ALAN , BALLEY ANDREW III , THIE WILLIAM , KIM YUNSANG , DORDI YEZDI
发明人： LEE ALAN , BALLEY ANDREW III , THIE WILLIAM , KIM YUNSANG , DORDI YEZDI
IPC分类号： B05D5/12 , B05D1/18
CPC分类号： H05K3/184 , C23C18/1605 , C23C18/1642 , C23C18/1669 , C23C18/1879 , C23C18/1882 , C23C18/38 , C23C18/40 , H05K3/064 , H05K2203/0571 , H05K2203/072 , H05K2203/087
摘要： A method for forming copper on a substrate including inputting a copper source solution into a mixer, inputting a reducing solution into the mixer, mixing copper source solution and the reducing solution to form a plating solution having a pH of greater than about 6.5 and applying the plating solution to a substrate, the substrate including a catalytic layer wherein applying the plating solution to the substrate includes forming a catalytic layer, maintaining the catalytic layer in a controlled environment and forming copper on the catalytic layer. A system for forming copper structures is also disclosed.
摘要翻译：一种在基板上形成铜的方法，包括将铜源溶液输入到混合器中，将还原溶液输入到混合器中，将铜源溶液和还原溶液混合以形成pH大于约6.5的电镀溶液，电镀溶液到基板上，所述基板包括催化层，其中将所述电镀液施加到所述基板上包括形成催化剂层，将所述催化剂层保持在受控环境中并在所述催化层上形成铜。还公开了一种用于形成铜结构的系统。

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