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1. 发明申请

WO2008027216A2 PROCESSES AND INTEGRATED SYSTEMS FOR ENGINEERING A SUBSTRATE SURFACE FOR METAL DEPOSITION 审中-公开
公开(公告)号：WO2008027216A2
公开(公告)日：2008-03-06
申请号：PCT/US2007018270
申请日：2007-08-17
申请人： LAM RES CORP , DORDI YEZDI , REDEKER FRITZ C , BOYD JOHN , THIE WILLIAM , ARUNAGIRI TIRUCHIRAPALLI , HOWALD ARTHUR M , YOON HYUNGSUK ALEXANDER , VERTOMMEN JOHAN
发明人： DORDI YEZDI , REDEKER FRITZ C , BOYD JOHN , THIE WILLIAM , ARUNAGIRI TIRUCHIRAPALLI , HOWALD ARTHUR M , YOON HYUNGSUK ALEXANDER , VERTOMMEN JOHAN
IPC分类号： B05D3/00 , B05D1/18 , B29C71/04 , C23C16/00
CPC分类号： H01L21/0206 , H01L21/02068 , H01L21/02074 , H01L21/28518 , H01L21/288 , H01L21/32115 , H01L21/76846 , H01L21/76849 , H01L21/76883
摘要： The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

2. 发明申请

WO2008027216A9 PROCESSES AND INTEGRATED SYSTEMS FOR ENGINEERING A SUBSTRATE SURFACE FOR METAL DEPOSITION 审中-公开
标题翻译：用于工程化金属沉积基板表面的工艺和集成系统
公开(公告)号：WO2008027216A9
公开(公告)日：2008-05-22
申请号：PCT/US2007018270
申请日：2007-08-17
申请人： LAM RES CORP , DORDI YEZDI , REDEKER FRITZ C , BOYD JOHN , THIE WILLIAM , ARUNAGIRI TIRUCHIRAPALLI , HOWALD ARTHUR M , YOON HYUNGSUK ALEXANDER , VERTOMMEN JOHAN
发明人： DORDI YEZDI , REDEKER FRITZ C , BOYD JOHN , THIE WILLIAM , ARUNAGIRI TIRUCHIRAPALLI , HOWALD ARTHUR M , YOON HYUNGSUK ALEXANDER , VERTOMMEN JOHAN
IPC分类号： C23C16/00
CPC分类号： H01L21/0206 , H01L21/02068 , H01L21/02074 , H01L21/28518 , H01L21/288 , H01L21/32115 , H01L21/76846 , H01L21/76849 , H01L21/76883
摘要： The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.
摘要翻译：这些实施例提供了产生金属对金属或硅 - 金属界面以提高电迁移性能，提供较低金属电阻率以及改善金属对金属或硅 - 金属的过程和集成系统铜互连的界面粘合。提供了一种制备衬底表面以在集成系统的铜表面上选择性地沉积钴合金材料薄层以提高铜互连的电迁移性能的示例性方法。该方法包括从集成系统中的衬底表面去除污染物和金属氧化物，并且在去除集成系统中的污染物和金属氧化物之后，使用还原环境来修复衬底表面。该方法还包括在修复基板表面之后，在集成系统中的铜互连的铜表面上选择性地沉积钴合金材料的薄层。还提供了用于实践上述示例性方法的系统。

3. 发明申请

WO2008027214A2 METHODS AND APPARATUS FOR BARRIER INTERFACE PREPARATION OF COPPER INTERCONNECT 审中-公开
标题翻译：铜连接接口界面准备的方法和装置
公开(公告)号：WO2008027214A2
公开(公告)日：2008-03-06
申请号：PCT/US2007018250
申请日：2007-08-17
申请人： LAM RES CORP , BOYD JOHN , DORDI YEZDI , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ C
发明人： BOYD JOHN , DORDI YEZDI , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ C
IPC分类号： B05D5/12 , B05C13/02 , B05D3/00 , B29C71/04 , C23C14/00 , C23C14/32 , C23C16/00 , H05K3/00
CPC分类号： H01L21/67196 , C23C14/22 , C23C16/06 , C23C16/44 , C23C16/45544 , C23C16/52 , C23C18/1619 , C23C18/1632 , C23C18/1653 , C23C18/38 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/02074 , H01L21/288 , H01L21/321 , H01L21/32115 , H01L21/32135 , H01L21/32136 , H01L21/67028 , H01L21/67161 , H01L21/67201 , H01L21/67207 , H01L21/6723 , H01L21/76807 , H01L21/76814 , H01L21/7684 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76861 , H01L21/76862 , H01L21/76873 , H01L21/76874 , H01L21/76876 , H01L21/76879
摘要： The embodiments fill the need of improving electromigration and reducing stress-induced voids of copper interconnect by enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect. The adhesion between the barrier layer and the copper layer can be improved by making the barrier layer metal-rich prior copper deposition and by limiting the amount of oxygen the barrier layer is exposed prior to copper deposition. Alternatively, a functionalization layer can be deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect with good adhesion between the barrier layer and the copper layer. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in an integrated system in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, wherein after depositing the metallic barrier layer, the substrate is transferred and processed in controlled environment to prevent the formation of metallic barrier oxide. The method also includes depositing the functionalization layer over the metallic layer in the integrated system. The method further includes depositing the copper layer in the copper interconnect structure in the integrated system after the functionalization layer is deposited over the metallic barrier layer.
摘要翻译：实施例满足了通过能够在铜互连中沉积薄且保形的阻挡层和铜层来改善电迁移并减少铜互连的应力诱导空隙的需要。阻挡层和铜层之间的粘附性可以通过在铜沉积之前使阻挡层富金属的先前铜沉积和限制阻挡层暴露的氧的量来改善。或者，功能化层可以沉积在阻挡层上，以使得铜层能够在铜互连中沉积，并且在阻挡层和铜层之间具有良好的粘合性。一种制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层的示例性方法，以帮助在集成系统中在铜互连中沉积铜层，以便改善铜互连的电迁移性能被提供。该方法包括沉积金属阻挡层以在集成系统中对铜互连结构进行排列，其中在沉积金属阻挡层之后，将衬底在受控环境中转移和加工以防止形成金属阻挡氧化物。该方法还包括在集成系统中的金属层上沉积功能化层。该方法还包括在官能化层沉积在金属阻挡层上之后，在集成系统中的铜互连结构中沉积铜层。

4. 发明申请

WO2008027215A3 APPARATUS AND METHOD FOR INTEGRATED SURFACE TREATMENT AND DEPOSITION FOR COPPER INTERCONNECT 审中-公开
标题翻译：用于铜互连的集成表面处理和沉积的装置和方法
公开(公告)号：WO2008027215A3
公开(公告)日：2008-11-13
申请号：PCT/US2007018254
申请日：2007-08-17
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , BOYD JOHN M , KOROLIK MIKHAIL , DORDI YEZDI , REDEKER FRITZ C
发明人： YOON HYUNGSUK ALEXANDER , BOYD JOHN M , KOROLIK MIKHAIL , DORDI YEZDI , REDEKER FRITZ C
IPC分类号： C23C16/00
CPC分类号： H01L21/67207 , C23C16/0227 , C23C16/452 , C23C16/45514 , C23C16/45517 , C23C16/45551 , C23C16/56 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L21/76868
摘要： The embodiments provide integrated apparatus and methods that perform substrate surface treatment and film deposition for copper interconnect with improved metal migration performance and reduced void propagation. In one exemplary embodiment, a chamber for performing surface treatment and film deposition is provided. The chamber includes a first proximity head for substrate surface treatment configured to dispense a first treatment gas to treat a portion of a surface of a substrate under the first proximity head for substrate surface treatment. The chamber also includes a first proximity head for atomic layer deposition (ALD) configured to sequentially dispensing a first reactant gas and a first purging gas to deposit a first ALD film under the second proximity head for ALD.
摘要翻译：这些实施例提供了集成设备和方法，其为铜互连执行衬底表面处理和膜沉积，具有改善的金属迁移性能和减少的空穴传播。在一个示例性实施例中，提供了用于执行表面处理和膜沉积的腔室。腔室包括用于基板表面处理的第一接近头，其配置成分配第一处理气体以处理用于基板表面处理的第一接近头下方的基板表面的一部分。腔室还包括用于原子层沉积（ALD）的第一接近头，其被配置为顺序地分配第一反应物气体和第一吹扫气体以在用于ALD的第二接近头下面沉积第一ALD膜。

5. 发明申请

WO2008027205A3 SELF ASSEMBLED MONOLAYER FOR IMPROVING ADHESION BETWEEN COPPER AND BARRIER LAYER 审中-公开
标题翻译：自组装单层膜用于改善铜与阻隔层之间的粘附性
公开(公告)号：WO2008027205A3
公开(公告)日：2008-04-24
申请号：PCT/US2007018212
申请日：2007-08-15
申请人： LAM RES CORP , NALLA PRAVEEN , THIE WILLIAM , BOYD JOHN , ARUNAGIRI TIRUCHIRAPALLI , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ C , DORDI YEZDI
发明人： NALLA PRAVEEN , THIE WILLIAM , BOYD JOHN , ARUNAGIRI TIRUCHIRAPALLI , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ C , DORDI YEZDI
IPC分类号： C23F11/00 , H01L21/302 , H01L21/312
CPC分类号： C23C16/45525 , C23C16/18 , H01L21/288 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/76861
摘要： The embodiments fill the need enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect with good electro-migration performance and with reduced risk of stress-induce voiding of copper interconnect. Electromigration and stress-induced voiding are affected by the adhesion between the barrier layer and the copper layer. A functionalization layer is deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect. The functionalization layer forms strong bonds with barrier layer and with copper to improve adhesion property between the two layers. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, and oxidizing a surface of the metallic barrier layer. The method also includes depositing the functionalization layer over the oxidized surface of the metallic barrier layer, and depositing the copper layer in the copper interconnect structure after the funcationalization layer is deposited over the metallic barrier layer.
摘要翻译：这些实施例满足了能够在铜互连中沉积薄且共形的阻挡层以及铜层的需要，其具有良好的电迁移性能并且具有降低的应力诱发铜互连空洞的风险。电迁移和应力引起的空洞受阻挡层和铜层之间的粘附影响。功能化层沉积在阻挡层上以使铜层能够沉积在铜互连中。官能化层与阻挡层和铜形成牢固的结合，以改善两层之间的粘合性能。提供了制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层以帮助在铜互连中沉积铜层以改善铜互连的电迁移性能的示例性方法。该方法包括沉积金属阻挡层以使集成系统中的铜互连结构排成线，并且氧化金属阻挡层的表面。该方法还包括在金属阻挡层的氧化表面上沉积功能化层，并且在功能化层沉积在金属阻挡层上之后将铜层沉积在铜互连结构中。

6. 发明申请

WO2007038256A3 APPARATUS FOR THE REMOVAL OF A METAL OXIDE FROM A SUBSTRATE AND METHODS THEREFOR 审中-公开
标题翻译：从基材上除去金属氧化物的装置及其方法
公开(公告)号：WO2007038256A3
公开(公告)日：2007-06-21
申请号：PCT/US2006036959
申请日：2006-09-22
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , THIE WILLIAM , DORDI YEZDI , BAILEY ANDREW D III
发明人： YOON HYUNGSUK ALEXANDER , THIE WILLIAM , DORDI YEZDI , BAILEY ANDREW D III
IPC分类号： B23K10/00
CPC分类号： H01L21/31116 , H01L21/02063 , H01L21/67069 , H05H1/24 , H05H1/2406 , H05H1/48 , H05H2001/2418
摘要： An apparatus generating a plasma for removing metal oxide from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the metal oxide.
摘要翻译：公开了一种产生等离子体以从衬底去除金属氧化物的设备。该实施例包括供电电极组件，该供电电极组件包括供电电极，第一介电层以及设置在供电电极和第一介电层之间的第一金属丝网。该实施例还包括与电源电极组件相对设置的接地电极组件，以便形成产生等离子体的空腔，当等离子体存在于空腔中时，第一电介质层被等离子体与等离子体屏蔽，腔在一端具有出口以提供等离子体以去除金属氧化物。

7. 发明申请

WO2007038030B1 APPARATUS FOR THE REMOVAL OF A FLUORINATED POLYMER FROM A SUBSTRATE AND METHODS THEREFOR 审中-公开
标题翻译：从底物中除去氟化聚合物的装置及其方法
公开(公告)号：WO2007038030B1
公开(公告)日：2008-01-24
申请号：PCT/US2006036139
申请日：2006-09-15
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , BOYD JOHN , KUTHI ANDRAS , BAILEY III ANDREW D
发明人： YOON HYUNGSUK ALEXANDER , BOYD JOHN , KUTHI ANDRAS , BAILEY III ANDREW D
IPC分类号： H01J7/24 , H01L21/302
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当等离子体存在于空腔中时，第一电线网被第一电介质层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

8. 发明申请

WO2007038030A2 APPARATUS FOR THE REMOVAL OF A FLUORINATED POLYMER FROM A SUBSTRATE AND METHODS THEREFOR 审中-公开
标题翻译：从底物中除去氟化聚合物的装置及其方法
公开(公告)号：WO2007038030A2
公开(公告)日：2007-04-05
申请号：PCT/US2006036139
申请日：2006-09-15
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , BOYD JOHN , KUTHI ANDRAS , BAILEY III ANDREW D
发明人： YOON HYUNGSUK ALEXANDER , BOYD JOHN , KUTHI ANDRAS , BAILEY III ANDREW D
IPC分类号： H01L21/302 , G03C1/00 , H01L21/461
CPC分类号： H01L21/02087 , B08B7/0035
摘要： An apparatus generating a plasma for removing fluorinated polymer from a substrate is disclosed. The embodiment includes a powered electrode assembly, including a powered electrode, a first dielectric layer, and a first wire mesh disposed between the powered electrode and the first dielectric layer. The embodiment also includes a grounded electrode assembly disposed opposite the powered electrode assembly so as to form a cavity wherein the plasma is generated, the first wire mesh being shielded from the plasma by the first dielectric layer when the plasma is present in the cavity, the cavity having an outlet at one end for providing the plasma to remove the fluorinated polymer.
摘要翻译：公开了一种从衬底生成用于除去氟化聚合物的等离子体的装置。该实施例包括动力电极组件，其包括供电电极，第一介电层和设置在电源电极和第一介电层之间的第一丝网。该实施例还包括与动力电极组件相对设置的接地电极组件，以便形成其中产生等离子体的空腔，当空腔中存在等离子体时，第一电线网被第一介电层与等离子体屏蔽，空腔在一端具有出口，用于提供等离子体以除去氟化聚合物。

9. 发明申请

WO2007130630A3 METHOD AND APPARATUS FOR ISOLATED BEVEL EDGE CLEAN 审中-公开
标题翻译：用于隔离水边缘清洁的方法和装置
公开(公告)号：WO2007130630A3
公开(公告)日：2008-12-31
申请号：PCT/US2007010929
申请日：2007-05-04
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , BAILEY ANDREW D III , JASON A RYDER , WILCOXSON MARK H , GASPARITSCH JEFFREY G , RANDY JOHNSON , HOFFMANN STEPHAN P
发明人： YOON HYUNGSUK ALEXANDER , BAILEY ANDREW D III , JASON A RYDER , WILCOXSON MARK H , GASPARITSCH JEFFREY G , RANDY JOHNSON , HOFFMANN STEPHAN P
IPC分类号： B08B11/02
CPC分类号： H01L21/67046 , Y10S134/902
摘要： An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.
摘要翻译：用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物底物。

10. 发明申请

WO2008055007A3 METHODS OF FABRICATING A BARRIER LAYER WITH VARYING COMPOSITION FOR COPPER METALLIZATION 审中-公开
标题翻译：用于铜冶金制造不同组成的障碍层的方法
公开(公告)号：WO2008055007A3
公开(公告)日：2008-07-03
申请号：PCT/US2007081776
申请日：2007-10-18
申请人： LAM RES CORP , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ
发明人： YOON HYUNGSUK ALEXANDER , REDEKER FRITZ
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/28562 , C23C16/029 , C23C16/34 , C23C16/45529 , H01L21/3141 , H01L21/318 , H01L21/76843 , H01L21/76846
摘要： Various embodiments provide improved processes and systems that produce a barrier layer with decreasing nitrogen concentration with the increase of film thickness. A barrier layer with decreasing nitrogen concentration with film thickness allows the end of barrier layer with high nitrogen concentration to have good adhesion with a dielectric layer and the end of barrier layer with low nitrogen concentration (or metal-rich) to have good adhesion with copper. An exemplary method of depositing a barrier layer on an interconnect structure is provided. The method includes (a) providing an atomic layer deposition environment, (b) depositing a barrier layer on the interconnect structure with a first nitrogen concentration during a first phase of deposition in the atomic layer deposition environment. The method further includes (c) continuing the deposition of the barrier layer on the interconnect structure with a second nitrogen concentration during a second phase deposition in the atomic layer deposition environment.
摘要翻译：各种实施方案提供改进的方法和系统，其随着膜厚度的增加产生具有降低的氮浓度的阻挡层。具有降低氮浓度的膜厚度的阻挡层允许具有高氮浓度的阻挡层的端部与电介质层和低氮浓度（或富含金属）的阻挡层的端部具有良好的粘附性以与铜具有良好的粘合性。提供了在互连结构上沉积阻挡层的示例性方法。该方法包括（a）提供原子层沉积环境，（b）在原子层沉积环境中的第一沉积阶段期间，在互连结构上沉积具有第一氮浓度的势垒层。该方法还包括（c）在原子层沉积环境中的第二相沉积期间，继续在互连结构上以第二氮浓度沉积阻挡层。

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