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1. 发明申请

WO2009087492A1 SEMICONDUCTOR PROCESSING METHOD 审中-公开
标题翻译：半导体处理方法
公开(公告)号：WO2009087492A1
公开(公告)日：2009-07-16
申请号：PCT/IB2008/051269
申请日：2008-01-09
申请人： FREESCALE SEMICONDUCTOR, INC. , VESSA, Tony
发明人： VESSA, Tony
IPC分类号： H01L21/311
CPC分类号： H01L21/02052 , B08B3/08 , G03F7/423 , G03F7/425 , H01L21/31133 , H01L21/67051 , H01L21/6708 , Y10S134/902
摘要： A process for treating the surface of a substrate in the manufacture of a semiconductor device. The process comprises providing a concentrated acid or base, a peroxide and water, and delivering the acid or base, the peroxide and the water to the surface of the substrate. The acid or base and the water are delivered separately to the surface of the substrate and allowed to mix on the surface, and the water is delivered in pulses. The present invention also provides an apparatus adapted to carry out this process.
摘要翻译：一种在制造半导体器件中处理衬底表面的方法。该方法包括提供浓酸或碱，过氧化物和水，并将酸或碱，过氧化物和水输送到基材的表面。将酸或碱和水分别输送到基材的表面并允许在表面上混合，并且以脉冲方式输送水。本发明还提供一种适于执行该过程的装置。

2. 发明申请

WO2009079422A1 METHOD AND APPARATUS FOR REMOVING CONTAMINANTS FROM SUBSTRATE 审中-公开
标题翻译：从基材中除去污染物的方法和装置
公开(公告)号：WO2009079422A1
公开(公告)日：2009-06-25
申请号：PCT/US2008/086742
申请日：2008-12-14
申请人： LAM RESEARCH CORPORATION , ZHU, Ji , MENDIRATTA, Arjun , MUI, David
发明人： ZHU, Ji , MENDIRATTA, Arjun , MUI, David
IPC分类号： H01L21/302 , H01L21/304
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： A cleaning material is applied to a surface of a substrate. The cleaning material includes one or more polymeric materials for entrapping contaminants present on the surface of the substrate. A rinsing fluid is applied to the surface of the substrate at a controlled velocity to effect removal of the cleaning material and contaminants entrapped within the cleaning material from the surface of the substrate. The controlled velocity of the rinsing fluid is set to cause the cleaning material to behave in an elastic manner when impacted by the rinsing fluid, thereby improving contaminant removal from the surface of the substrate.
摘要翻译：将清洁材料施加到基板的表面。清洁材料包括用于捕获存在于基底表面上的污染物的一种或多种聚合物材料。冲洗流体以受控的速度施加到基底的表面，以从衬底的表面去除被清除材料和被污染的清洁材料中的污染物。洗涤流体的受控速度被设定为使得清洁材料在被冲洗流体冲击时以弹性方式表现，从而改善从基材表面去除污染物质。

3. 发明申请

WO2009078969A1 APPARATUS FOR PARTICLE REMOVAL BY SINGLE-PHASE AND TWO-PHASE MEDIA 审中-公开
标题翻译：用于单相和两相介质去除颗粒的装置
公开(公告)号：WO2009078969A1
公开(公告)日：2009-06-25
申请号：PCT/US2008/013697
申请日：2008-12-12
申请人： LAM RESEARCH CORPORATION , MUI, David, S., L. , SRINIVASAN, Satish , PENG, Grant , ZHU, Ji , KON, Shih-Chung , PODLESNIK, Dragan , MENDIRATTA, Arjun
发明人： MUI, David, S., L. , SRINIVASAN, Satish , PENG, Grant , ZHU, Ji , KON, Shih-Chung , PODLESNIK, Dragan , MENDIRATTA, Arjun
IPC分类号： H01L21/302 , H01L21/304
CPC分类号： C11D7/5009 , C11D3/3723 , C11D3/3765 , C11D3/3773 , C11D7/261 , C11D7/3263 , C11D7/34 , C11D11/0047 , H01L21/02057 , H01L21/67051 , Y10S134/902
摘要： The embodiments of the present invention provide apparatus for cleaning patterned substrates with fine features with cleaning materials. The apparatus using the cleaning materials has advantages in cleaning patterned substrates with fine features without substantially damaging the features. The cleaning materials are fluid, either in liquid phase, or in liquid/gas phase, and deform around device features; therefore, the cleaning materials do not substantially damage the device features or reduce damage all together. The cleaning materials containing polymers of a polymeric compound with large molecular weight capture the contaminants on the substrate. In addition, the cleaning materials entrap the contaminants and do not return the contaminants to the substrate surface. The polymers of one or more polymeric compounds with large molecular weight form long polymer chains, which can also be cross-linked to form a network (or polymeric network). The long polymer chains and/or polymer network show superior capabilities of capturing and entrapping contaminants, in comparison to conventional cleaning materials.
摘要翻译：本发明的实施例提供了用清洁材料清洁具有精细特征的图案化衬底的设备。使用清洁材料的设备具有清洁具有精细特征的图案化基材而不会显着损害特征的优点。清洁材料是流体，液相或液相/气相，并围绕装置特征变形; 因此，清洁材料基本上不会损坏设备特征或将损伤全部降低在一起。包含具有大分子量的聚合物的聚合物的清洁材料捕获基底上的污染物。此外，清洁材料夹带污染物并且不会将污染物返回到基底表面。一种或多种具有大分子量的聚合物的聚合物形成长的聚合物链，其也可以交联以形成网络（或聚合物网络）。与传统清洁材料相比，长的聚合物链和/或聚合物网络显示出捕获和捕获污染物的优异性能。

4. 发明申请

WO2009072406A1 シリコンウェーハ洗浄方法およびその装置审中-公开
标题翻译：用于清洁硅波的方法和用于清洁硅波的装置
公开(公告)号：WO2009072406A1
公开(公告)日：2009-06-11
申请号：PCT/JP2008/071198
申请日：2008-11-21
申请人：株式会社SUMCO , 奥内茂 , 高石和成
发明人：奥内茂 , 高石和成
IPC分类号： H01L21/304
CPC分类号： H01L21/02052 , H01L21/67051 , Y10S134/902 , Y10S438/906 , Y10S438/928
摘要：　チャンバ内でウェーハ表面に水膜を形成後、水膜に、酸化ガスの酸化成分、有機酸ミストの有機酸成分とＨＦガスのＨＦ成分、有機酸ミスト、酸化ガスの酸化成分を順に供給する。結果、ＨＦ成分と有機酸成分でのウェーハ面の洗浄効果が得られ、ウェーハ面内での水膜中の洗浄成分の濃度を均一にできる。
摘要翻译：在室内的晶片表面上形成水膜后，氧化气体的氧化成分，有机酸雾的有机酸成分，HF气体的HF成分，有机酸雾，氧化性将氧化剂气体的成分依次供给水膜。结果，可以实现利用HF成分和有机酸成分清洗晶片的表面的效果，并且可以使晶片表面内的水膜中的清洁成分的浓度均匀。

5. 发明申请

WO2009020808A1 APPARATUS AND METHOD FOR INDIRECT SURFACE CLEANING 审中-公开
标题翻译：用于间接表面清洁的装置和方法
公开(公告)号：WO2009020808A1
公开(公告)日：2009-02-12
申请号：PCT/US2008/071546
申请日：2008-07-30
申请人： RAVE, LLC , LECLAIRE, Jeffrey E. , ROESSLER, Kenneth Gilber , BRINKLEY, David
发明人： LECLAIRE, Jeffrey E. , ROESSLER, Kenneth Gilber , BRINKLEY, David
IPC分类号： B08B3/12
CPC分类号： B08B7/0042 , G03F1/82 , Y10S134/902
摘要： A method for laser surface cleaning of a target surface that has limited or no access to the environment directly above the surface to be cleaned. The method includes the ability to clean the surface with a reduced risk of substrate damage. The method includes direct laser excitation of a contaminated substrate surface and thermal transfer from the substrate to the contaminating particulate or contamination layer. The method also includes producing a thermally based removal and reducing a risk of substrate damage by keeping the temperature required to produce surface cleaning below the thermal damage level of the substrate material. In addition, the method includes reducing the risk of substrate damage by utilizing relatively long pulse-widths, providing for improved removal of small contaminants/particles, and directing the beam through a material disposed relative to the surface that is part of the substrates environmental enclosure.
摘要翻译：一种用于目标表面的激光表面清洁的方法，该方法在待清洁表面正上方有限制或无法进入环境。该方法包括清洁表面的能力，降低了底物损伤的风险。该方法包括对受污染的基底表面的直接激光激发和从基底到污染颗粒或污染层的热传递。该方法还包括通过将产生表面清洁所需的温度保持在基底材料的热损伤水平以下来产生基于热的去除并降低基底损伤的风险。此外，该方法包括通过利用相对较长的脉冲宽度降低衬底损伤的风险，提供改善的小污染物/颗粒的去除，以及引导光束穿过相对于作为衬底环境外壳的一部分的表面设置的材料。

6. 发明申请

WO2008085390A2 SUBSTRATE CLEANING PROCESSES THROUGH THE USE OF SOLVENTS AND SYSTEMS 审中-公开
标题翻译：通过使用溶剂和系统进行基片清洗过程
公开(公告)号：WO2008085390A2
公开(公告)日：2008-07-17
申请号：PCT/US2007026088
申请日：2007-12-20
申请人： EASTMAN CHEM CO
发明人： QUILLEN MICHAEL WAYNE , HOLBROOK LOADY PALMER JR , MOORE JOHN CLEAON
IPC分类号： H01L21/02 , H01L21/306
CPC分类号： H01L21/02052 , C11D3/2017 , C11D3/2093 , C11D3/43 , C11D7/261 , C11D7/266 , C11D7/5022 , C11D11/0047 , H01L21/02057 , Y10S134/902
摘要： A method for removing common contaminates or residues which include but are not limited to ionic residues, particulate residues and moisture from semiconductor wafers used in the manufacture of IC (integrated circuits), liquid crystal displays and flat panel displays. The process includes the use of certain esters or certain esters combined with particular co-solvents. The cleaning method may be utilized in a variety of cleaning processes or process steps and offers economic and performance advantages.
摘要翻译：一种用于去除IC（集成电路），液晶显示器和平板显示器制造中使用的半导体晶片的常见污染物或残余物的方法，所述污染物或残余物包括但不限于离子残留物，微粒残留物和水分。该方法包括使用某些酯或某些与特定共溶剂结合的酯。清洁方法可用于各种清洁工艺或工艺步骤，并提供经济和性能优势。

7. 发明申请

WO2008002977A2 APPARATUS FOR APPLYING A PLATING SOLUTION FOR ELECTROLESS DEPOSITION 审中-公开
标题翻译：用于施加电镀沉积溶液的装置
公开(公告)号：WO2008002977A2
公开(公告)日：2008-01-03
申请号：PCT/US2007/072241
申请日：2007-06-27
申请人： LAM RESEARCH CORPORATION , DORDI, Yezdi , THIE, William , BOYD, John, M. , REDEKER, Fritz, C. , OWCZARZ, Aleksander
发明人： DORDI, Yezdi , THIE, William , BOYD, John, M. , REDEKER, Fritz, C. , OWCZARZ, Aleksander
IPC分类号： C23C18/40
CPC分类号： H01L21/02074 , C23C18/1628 , C23C18/38 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76883 , Y10S134/902
摘要： An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.
摘要翻译：
提供无电电镀室。无电电镀腔室包括构造成支撑衬底的卡盘和围绕卡盘的基座和侧壁的碗。基部具有沿基部的内径限定的环形通道。该室包括连接到环形通道的排水管。排水管能够去除从卡盘收集的流体。腔室中包括能够清洁和基本干燥基板的接近头。还提供了一种进行化学镀操作的方法。

8. 发明申请

WO2008002669A2 POST ETCH WAFER SURFACE CLEANING WITH LIQUID MENISCUS 审中-公开
标题翻译：后洗涤表面清洗与液体肉汤
公开(公告)号：WO2008002669A2
公开(公告)日：2008-01-03
申请号：PCT/US2007/015249
申请日：2007-06-28
申请人： LAM RESEARCH CORPORATION , ZHU, Ji , YUN, Seokmin , WILCOXSON, Mark , DE LARIOS, John, M.
发明人： ZHU, Ji , YUN, Seokmin , WILCOXSON, Mark , DE LARIOS, John, M.
IPC分类号： C23G1/00 , C23G1/02 , B08B3/00
CPC分类号： H01L21/67028 , H01L21/67034 , H01L21/67051 , Y10S134/902
摘要： A method for cleaning the surface of a semiconductor wafer is disclosed. A first cleaning solution is applied to the wafer surface to remove contaminants on the wafer surface. The first cleaning solution is removed with some of the contaminants on the wafer surface. Next, an oxidizer solution is applied to the wafer surface. The oxidizer solution forms an oxidized layer on remaining contaminants. The oxidizer solution is removed and then a second cleaning solution is applied to the wafer surface. The second cleaning solution is removed from the wafer surface. The cleaning solution is configured to substantially remove the oxidized layer along with the remaining contaminants.
摘要翻译：公开了一种用于清洁半导体晶片的表面的方法。将第一清洁溶液施加到晶片表面以去除晶片表面上的污染物。用晶片表面上的一些污染物去除第一清洗液。接下来，将氧化剂溶液施加到晶片表面。氧化剂溶液在剩余的污染物上形成氧化层。除去氧化剂溶液，然后将第二清洁溶液施加到晶片表面。从晶片表面去除第二清洗溶液。清洁溶液被配置为与剩余的污染物一起基本上除去氧化层。

9. 发明申请

WO2007130630A2 METHOD AND APPARATUS FOR ISOLATED BEVEL EDGE CLEAN 审中-公开
标题翻译：用于隔离水边缘清洁的方法和装置
公开(公告)号：WO2007130630A2
公开(公告)日：2007-11-15
申请号：PCT/US2007/010929
申请日：2007-05-04
申请人： LAM RESEARCH CORPORATION , YOON, Hyungsuk, Alexander , BAILEY, Andrew, D., III. , JASON, A., Ryder , WILCOXSON, Mark, H. , GASPARITSCH, Jeffrey, G. , RANDY Johnson , HOFFMANN, Stephan, P.
发明人： YOON, Hyungsuk, Alexander , BAILEY, Andrew, D., III. , JASON, A., Ryder , WILCOXSON, Mark, H. , GASPARITSCH, Jeffrey, G. , RANDY Johnson , HOFFMANN, Stephan, P.
IPC分类号： A47L9/06
CPC分类号： H01L21/67046 , Y10S134/902
摘要： An apparatus, system and method for cleaning a substrate edge include a bristle brush unit that cleans bevel polymers deposited on substrate edges using frictional contact in the presence of cleaning chemistry. The bristle brush unit is made up of a plurality of outwardly extending vanes and is mounted on a rotating shaft. An abrasive material is distributed throughout and within the outwardly extending vanes of the bristle brush unit to provide the frictional contact. The bristle brush unit cleans the edge of the substrate by allowing frictional contact of the plurality of abrasive particles with the edge of the substrate in the presence of fluids, such as cleaning chemistry, to cut, rip and tear the bevel polymer from the edge of the substrate.
摘要翻译：用于清洁基材边缘的装置，系统和方法包括刷毛刷单元，其在清洁化学品存在下使用摩擦接触来清洁沉积在基板边缘上的斜面聚合物。刷毛单元由多个向外延伸的叶片组成，并安装在旋转轴上。研磨材料分布在刷毛刷单元的向外延伸的叶片内部和内部，以提供摩擦接触。刷毛刷单元通过在诸如清洁化学的流体存在下允许多个磨料颗粒与基材的边缘摩擦接触来清洁基材的边缘，以从斜面聚合物的边缘切割，撕裂和撕裂斜面聚合物底物。

10. 发明申请

WO2007010679A1 剥離剤組成物审中-公开
标题翻译：去除组合物
公开(公告)号：WO2007010679A1
公开(公告)日：2007-01-25
申请号：PCT/JP2006/311183
申请日：2006-06-05
申请人：花王株式会社 , 宮本定治 , 佐々木靖
发明人：宮本定治 , 佐々木靖
IPC分类号： C11D3/30 , C09D9/00 , C11D3/34 , G03F7/42 , H01L21/304
CPC分类号： C09D9/00 , C11D7/08 , C11D7/3209 , C11D11/0047 , G03F7/425 , H01L21/02071 , Y10S134/902
摘要：　1,3-プロパンジアミン（a）、1-ヒドロキシエチリデン-1,1-ジホスホン酸（b）および水を含有する剥離剤組成物であって、成分（a）の含有量が0.2～30重量％、成分（b）の含有量が0.05～10重量％、水の含有量が60～99.75重量％であり、20°Cにおける該組成物のpHが9～13である剥離剤組成物、並びに、有機アミン（A）、有機ホスホン酸（B）、直鎖糖アルコール（C）および水を含有する剥離剤組成物であって、成分（A）の含有量が0.2～30重量％、成分（B）の含有量が0.05～10重量％、成分（C）の含有量が0.1～10重量％、水の含有量が50～99.65重量％であり、20°Cにおける該組成物のpHが9～13である剥離剤組成物。
摘要翻译：含有1,3-丙二胺（a），1-羟基亚乙基-1,1-二膦酸（b）和水的去除剂组合物，其中组分（a），组分（b）和水的含量为0.2 至30重量％，0.05至10重量％和60至99.75重量％，并且其在20℃下的pH为9至13; 和含有有机胺（A），有机膦酸（B），直链糖醇（C））和水的去除剂组合物，其中组分（A），组分（B），组分（C）和水分别为0.2〜30重量％，0.05〜10重量％，0.1〜10重量％，50〜99.65重量％，在20℃下pH为9〜13。

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