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1. 发明申请

WO2010027950A4 METHODS AND SOLUTIONS FOR PREVENTING THE FORMATION OF METAL PARTICULATE DEFECT MATTER UPON A SUBSTRATE AFTER A PLATING PROCESS 审中-公开
标题翻译：预防镀覆后基底上金属颗粒缺陷形成的方法和解决方案
公开(公告)号：WO2010027950A4
公开(公告)日：2010-08-05
申请号：PCT/US2009055572
申请日：2009-09-01
申请人： LAM RES , LI SHIJIAN , KOLICS ARTUR K , ARUNAGIRI TIRUCHIRAPALLI N
发明人： LI SHIJIAN , KOLICS ARTUR K , ARUNAGIRI TIRUCHIRAPALLI N
IPC分类号： C23C18/16 , C23C18/18 , C23C18/54
CPC分类号： C23C18/50 , C23C18/1689 , C25D5/48
摘要： Methods and solutions for preventing the formation of metal particulate defect matter upon a substrate after plating processes are provided. In particular, solutions are provided which are free of oxidizing agents and include a non-metal pH adjusting agent in sufficient concentration such that the solution has a pH between approximately 7.5 and approximately 12.0. In some cases, a solution may include a chelating agent. In addition or alternatively, a solution may include at least two different types of complexing agents each offering a single point of attachment for binding metal ions via respectively different functional groups. In any case, at least one of the complexing agents or the chelating agent includes a non-amine or non-imine functional group. An embodiment of a method for processing a substrate includes plating a metal layer upon the substrate and subsequently exposing the substrate to a solution comprising the aforementioned make-up.
摘要翻译：提供了用于防止在电镀工艺之后在衬底上形成金属颗粒缺陷物质的方法和解决方案。具体而言，提供不含氧化剂的溶液，并且包含足够浓度的非金属pH调节剂，使得溶液的pH在约7.5至约12.0之间。在一些情况下，溶液可以包含螯合剂。另外或可选地，溶液可以包括至少两种不同类型的络合剂，每种络合剂提供通过各自不同的官能团结合金属离子的单一连接点。在任何情况下，络合剂或螯合剂中的至少一种包括非胺或非亚胺官能团。用于处理衬底的方法的实施例包括在衬底上电镀金属层并随后将衬底暴露于包含前述化妆品的溶液。

2. 发明申请

WO2008130519A1 METHOD AND APPARATUS FOR WAFER ELECTROLESS PLATING 审中-公开
标题翻译：用于电镀电镀的方法和装置
公开(公告)号：WO2008130519A1
公开(公告)日：2008-10-30
申请号：PCT/US2008/004769
申请日：2008-04-14
申请人： LAM RESEARCH CORPORATION , THIE, William , BOYD, John, M. , REDEKER, Fritz, C. , DORDI, Yezdi , PARKS, John , ARUNAGIRI, Tiruchirapalli , OWCZARZ, Aleksander , BALISKY, Todd , THOMAS, Clint , WYLIE, Jacob , SCHOEPP, Alan, M.
发明人： THIE, William , BOYD, John, M. , REDEKER, Fritz, C. , DORDI, Yezdi , PARKS, John , ARUNAGIRI, Tiruchirapalli , OWCZARZ, Aleksander , BALISKY, Todd , THOMAS, Clint , WYLIE, Jacob , SCHOEPP, Alan, M.
IPC分类号： H01L21/304
CPC分类号： H01L21/02104 , C23C18/1619 , H01L21/67005 , H01L21/6715
摘要： A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.
摘要翻译：半导体晶片化学镀设备包括压板和流体碗。压板具有限定为支撑晶片的顶表面和从顶表面的周边向下延伸到压板的下表面的外表面。流体碗具有由内表面限定的内部容积，以便在内部容积内容纳压板和要支撑在其上的晶片。密封件设置在流体碗的内表面周围，以便当接合在流体碗的内表面和压板的外表面之间时形成液密屏障。多个流体分配喷嘴被定位成在密封件上方的流体碗内分配电镀溶液，以便在压板上升起并流动，从而当存在于压板上时流过晶片。

3. 发明申请

WO2008130518A1 FLUID HANDLING SYSTEM FOR WAFER ELECTROLESS PLATING AND ASSOCIATED METHODS 审中-公开
标题翻译：用于电镀电镀的流体处理系统及相关方法
公开(公告)号：WO2008130518A1
公开(公告)日：2008-10-30
申请号：PCT/US2008/004759
申请日：2008-04-11
申请人： LAM RESEARCH CORPORATION , THIE, William , BOYD, John, M. , REDEKER, Fritz, C. , DORDI, Yezdi , PARKS, John , ARUNAGIRI, Tiruchirapalli , OWCZARZ, Aleksander , BALISKY, Todd , THOMAS, Clint , WYLIE, Jacob , SCHOEPP, Alan, M.
发明人： THIE, William , BOYD, John, M. , REDEKER, Fritz, C. , DORDI, Yezdi , PARKS, John , ARUNAGIRI, Tiruchirapalli , OWCZARZ, Aleksander , BALISKY, Todd , THOMAS, Clint , WYLIE, Jacob , SCHOEPP, Alan, M.
IPC分类号： H01L21/28 , H01L21/3205
CPC分类号： C23C18/1628 , Y10T137/87652
摘要： A chemical fluid handling system is defined to supply a number of chemicals to a number of fluid inputs of a mixing manifold. The chemical fluid handling system includes a number of fluid recirculation loops for separately pre-conditioning and controlling the supply of each of the number of chemicals. Each of the fluid recirculation loops is defined to degas, heat, and filter a particular one of the number of chemical components. The mixing manifold is defined to mix the number of chemicals to form the electroless plating solution. The mixing manifold includes a fluid output connected to a supply line. The supply line is connected to supply the electroless plating solution to a fluid bowl within an electroless plating chamber.
摘要翻译：化学流体处理系统被定义为向混合歧管的多个流体输入提供许多化学物质。化学流体处理系统包括多个流体再循环回路，用于分别预处理和控制每个化学物质的供应。每个流体循环回路被定义为对特定的一个化学成分进行脱气，加热和过滤。混合歧管被定义为混合化学品的数量以形成化学镀溶液。混合歧管包括连接到供应管线的流体输出。供电线连接以将化学镀溶液供应到化学镀室内的流体碗。

4. 发明申请

WO2008027386A3 CONTROLLED AMBIENT SYSTEM FOR INTERFACE ENGINEERING 审中-公开
标题翻译：用于界面工程的控制环境系统
公开(公告)号：WO2008027386A3
公开(公告)日：2008-08-21
申请号：PCT/US2007018924
申请日：2007-08-28
申请人： LAM RES CORP , BOYD JOHN , DORDI YEZDI , ARUNAGIRI TIRUCHIRAPALLI , MOORING BENJAMIN W , PARKS JOHN , THIE WILLIAM , REDEKER FRITZ C , HOWALD ARTHUR M , SCHOEPP ALAN , HEMKER DAVID
发明人： BOYD JOHN , DORDI YEZDI , ARUNAGIRI TIRUCHIRAPALLI , MOORING BENJAMIN W , PARKS JOHN , THIE WILLIAM , REDEKER FRITZ C , HOWALD ARTHUR M , SCHOEPP ALAN , HEMKER DAVID
IPC分类号： H01L21/00 , H01L21/20
CPC分类号： H01L21/67184 , H01L21/67017 , H01L21/67207 , H01L21/67745
摘要： A cluster architecture including a lab-ambient controlled transfer module that is coupled to one or more wet substrate processing modules The lab-ambient controlled transfer module and the one or more wet substrate processing modules manage a first ambient environment having a vacuum transfer module coupled to the lab-ambient controlled transfer module and one or more plasma processing modules The vacuum transfer module and the one or more plasma processing modules manage a second ambient environment A controlled ambient transfer module coupled to the vacuum transfer module and one or more ambient processing modules manage a third ambient environment The cluster architecture therefore enables controlled processing of the substrate in eith the first, second or third ambient environments, as well as dupng associated transitions The embodiments also provide for efficient methods for filling a trench of a substrate
摘要翻译：一种集群架构，包括耦合到一个或多个湿式衬底处理模块的实验室环境受控传输模块。实验室环境受控传输模块和一个或多个湿衬底处理模块管理第一环境环境，其具有耦合到实验室环境控制转移模块和一个或多个等离子体处理模块真空转移模块和一个或多个等离子体处理模块管理第二周围环境。耦合到真空转移模块的受控环境转移模块和一个或多个环境处理模块管理第三环境环境因此，集群体系结构能够在第一，第二或第三环境环境中进行衬底的受控处理，以及重复相关的过渡。实施例还提供用于填充衬底的沟槽的有效方法

5. 发明申请

WO2008027205A3 SELF ASSEMBLED MONOLAYER FOR IMPROVING ADHESION BETWEEN COPPER AND BARRIER LAYER 审中-公开
标题翻译：自组装单层膜用于改善铜与阻隔层之间的粘附性
公开(公告)号：WO2008027205A3
公开(公告)日：2008-04-24
申请号：PCT/US2007018212
申请日：2007-08-15
申请人： LAM RES CORP , NALLA PRAVEEN , THIE WILLIAM , BOYD JOHN , ARUNAGIRI TIRUCHIRAPALLI , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ C , DORDI YEZDI
发明人： NALLA PRAVEEN , THIE WILLIAM , BOYD JOHN , ARUNAGIRI TIRUCHIRAPALLI , YOON HYUNGSUK ALEXANDER , REDEKER FRITZ C , DORDI YEZDI
IPC分类号： C23F11/00 , H01L21/302 , H01L21/312
CPC分类号： C23C16/45525 , C23C16/18 , H01L21/288 , H01L21/76843 , H01L21/76855 , H01L21/76856 , H01L21/76861
摘要： The embodiments fill the need enabling deposition of a thin and conformal barrier layer, and a copper layer in the copper interconnect with good electro-migration performance and with reduced risk of stress-induce voiding of copper interconnect. Electromigration and stress-induced voiding are affected by the adhesion between the barrier layer and the copper layer. A functionalization layer is deposited over the barrier layer to enable the copper layer being deposit in the copper interconnect. The functionalization layer forms strong bonds with barrier layer and with copper to improve adhesion property between the two layers. An exemplary method of preparing a substrate surface of a substrate to deposit a functionalization layer over a metallic barrier layer of a copper interconnect to assist deposition of a copper layer in the copper interconnect in order to improve electromigration performance of the copper interconnect is provided. The method includes depositing the metallic barrier layer to line the copper interconnect structure in the integrated system, and oxidizing a surface of the metallic barrier layer. The method also includes depositing the functionalization layer over the oxidized surface of the metallic barrier layer, and depositing the copper layer in the copper interconnect structure after the funcationalization layer is deposited over the metallic barrier layer.
摘要翻译：这些实施例满足了能够在铜互连中沉积薄且共形的阻挡层以及铜层的需要，其具有良好的电迁移性能并且具有降低的应力诱发铜互连空洞的风险。电迁移和应力引起的空洞受阻挡层和铜层之间的粘附影响。功能化层沉积在阻挡层上以使铜层能够沉积在铜互连中。官能化层与阻挡层和铜形成牢固的结合，以改善两层之间的粘合性能。提供了制备衬底的衬底表面以在铜互连的金属阻挡层上沉积功能化层以帮助在铜互连中沉积铜层以改善铜互连的电迁移性能的示例性方法。该方法包括沉积金属阻挡层以使集成系统中的铜互连结构排成线，并且氧化金属阻挡层的表面。该方法还包括在金属阻挡层的氧化表面上沉积功能化层，并且在功能化层沉积在金属阻挡层上之后将铜层沉积在铜互连结构中。

6. 发明申请

WO2010027950A3 METHODS AND SOLUTIONS FOR PREVENTING THE FORMATION OF METAL PARTICULATE DEFECT MATTER UPON A SUBSTRATE AFTER A PLATING PROCESS 审中-公开
标题翻译：用于防止在镀层工艺后形成基底的金属颗粒缺陷问题的方法和解决方案
公开(公告)号：WO2010027950A3
公开(公告)日：2010-06-17
申请号：PCT/US2009055572
申请日：2009-09-01
申请人： LAM RES , LI SHIJIAN , KOLICS ARTUR K , ARUNAGIRI TIRUCHIRAPALLI N
发明人： LI SHIJIAN , KOLICS ARTUR K , ARUNAGIRI TIRUCHIRAPALLI N
IPC分类号： C23C18/16 , C23C18/18 , C23C18/54
CPC分类号： C23C18/50 , C23C18/1689 , C25D5/48
摘要： Methods and solutions for preventing the formation of metal particulate defect matter upon a substrate after plating processes are provided. In particular, solutions are provided which are free of oxidizing agents and include a non-metal pH adjusting agent in sufficient concentration such that the solution has a pH between approximately 7.5 and approximately 12.0. In some cases, a solution may include a chelating agent. In addition or alternatively, a solution may include at least two different types of complexing agents each offering a single point of attachment for binding metal ions via respectively different functional groups. In any case, at least one of the complexing agents or the chelating agent includes a non-amine or non-imine functional group. An embodiment of a method for processing a substrate includes plating a metal layer upon the substrate and subsequently exposing the substrate to a solution comprising the aforementioned make-up.
摘要翻译：提供了用于防止在电镀工艺之后在基板上形成金属颗粒缺陷物质的方法和解决方案。特别地，提供了不含氧化剂的溶液，并且包括足够浓度的非金属pH调节剂，使得溶液的pH在约7.5至约12.0之间。在一些情况下，溶液可以包括螯合剂。另外或替代地，溶液可以包括至少两种不同类型的络合剂，其各自提供用于通过分别不同的官能团结合金属离子的单个附着点。在任何情况下，至少一种络合剂或螯合剂包括非胺或非亚胺官能团。用于处理衬底的方法的实施例包括将金属层电镀在衬底上，随后将衬底暴露于包含上述组成的溶液中。

7. 发明申请

WO2008085261A1 SELF-LIMITING PLATING METHOD 审中-公开
标题翻译：自限制镀层法
公开(公告)号：WO2008085261A1
公开(公告)日：2008-07-17
申请号：PCT/US2007/025469
申请日：2007-12-12
申请人： LAM RESEARCH CORPORATION , BOYD, John , DORDI, Yezdi , ARUNAGIRI, Tiruchirapalli , THIE, William , REDEKER, Fritz , NALLA, Praveen
发明人： BOYD, John , DORDI, Yezdi , ARUNAGIRI, Tiruchirapalli , THIE, William , REDEKER, Fritz , NALLA, Praveen
IPC分类号： C23C18/31 , C23C18/18
CPC分类号： C23C18/1689 , C23C18/161 , C23C18/1653 , C23C18/1658 , C23C18/1683 , C23C18/31 , H01L21/288 , H01L21/76877
摘要： A self-limiting electroless plating process is provided to plate thin films with improved uniformity. The process comprises dispensing an electroless plating solution onto a substrate to form a quiescent solution layer from which a conformal plated layer plates onto a surface of the substrate by a redox reaction. The redox reaction occurs at the surface of the substrate between a reducing agent ion and a plating ion and produces an oxidized ion. Because the solution is quiescent, a boundary layer forms within the solution layer adjacent to the surface. The boundary layer is characterized by a concentration gradient of the oxidized ion. Diffusion of the reducing agent ion through the boundary layer controls the redox reaction. The quiescent solution layer can be maintained until the reducing agent ion in the solution layer is substantially depleted.
摘要翻译：提供了一种自限制化学镀工艺，以平整薄膜，以均匀度提高。该方法包括将化学镀溶液分配到基底上以形成静电溶液层，通过氧化还原反应从其中将共形镀层从该平板镀在基底的表面上。氧化还原反应发生在还原剂离子和镀覆离子之间的衬底表面，并产生氧化离子。因为溶液是静止的，所以在与表面相邻的溶液层内形成边界层。边界层的特征在于氧化离子的浓度梯度。还原剂离子通过边界层的扩散控制氧化还原反应。可以维持静止溶液层，直到溶液层中的还原剂离子基本上被耗尽。

8. 发明申请

WO2008076677A1 METHODS AND SYSTEMS FOR BARRIER LAYER SURFACE PASSIVATION 审中-公开
标题翻译：阻挡层表面钝化的方法和系统
公开(公告)号：WO2008076677A1
公开(公告)日：2008-06-26
申请号：PCT/US2007/086895
申请日：2007-12-08
申请人： LAM RESEARCH CORPORATION , DORDI, Yezdi , BOYD, John , REDEKER, Fritz , THIE, William , ARUNAGIRI, Tiruchirapalli , YOON, Hyungsuk Alexander
发明人： DORDI, Yezdi , BOYD, John , REDEKER, Fritz , THIE, William , ARUNAGIRI, Tiruchirapalli , YOON, Hyungsuk Alexander
IPC分类号： H01L21/28
CPC分类号： C23C8/02 , C23C8/80 , C23C10/02 , C23C10/60 , C23C16/54 , C23C16/56 , C23C18/1601 , C23C18/1632 , C23C18/54 , C23C26/00 , C23C28/023 , C23C28/322 , C23C28/34 , C25D7/123 , C25D17/001 , H01L21/67161 , H01L21/67207 , H01L21/76855 , H01L21/76861 , H01L21/76862 , H01L21/76873
摘要： This invention pertains to methods and systems for fabricating semiconductor devices. One aspect of the present invention is a method of depositing a gapfill copper layer onto barrier layer for semiconductor device metallization. In one embodiment, the method includes forming the barrier layer on a surface of a substrate and subjecting the barrier layer to a process condition so as to form a removable passivated surface on the barrier layer. The method further includes removing the passivated surface from the barrier layer and depositing the gapfill copper layer onto the barrier layer. Another aspect of the present invention is an integrated system for depositing a copper layer onto a barrier layer for semiconductor device metallization. In one embodiment, the integrated system comprises at least one process module configured for barrier layer deposition and passivated surface formation and at least one other process module configured for passivated surface removal and deposition of copper onto the barrier layer. The system further includes at least one transfer module coupled so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment.
摘要翻译：本发明涉及用于制造半导体器件的方法和系统。本发明的一个方面是在用于半导体器件金属化的阻挡层上沉积间隙填充铜层的方法。在一个实施例中，该方法包括在衬底的表面上形成阻挡层，并使阻挡层经受处理条件，以便在阻挡层上形成可移除的钝化表面。该方法还包括从阻挡层去除钝化表面并将间隙填充铜层沉积到阻挡层上。本发明的另一方面是用于在用于半导体器件金属化的阻挡层上沉积铜层的集成系统。在一个实施例中，集成系统包括被配置用于阻挡层沉积和钝化表面形成的至少一个工艺模块和被配置用于钝化表面去除和沉积到阻挡层上的至少一个其它工艺模块。所述系统还包括至少一个传送模块，所述至少一个传送模块被耦合，使得所述衬底可以在所述模块之间基本上不被暴露于形成氧化物的环境

9. 发明申请

WO2008027216A3 PROCESSES AND INTEGRATED SYSTEMS FOR ENGINEERING A SUBSTRATE SURFACE FOR METAL DEPOSITION 审中-公开
公开(公告)号：WO2008027216A3
公开(公告)日：2008-03-06
申请号：PCT/US2007/018270
申请日：2007-08-17
申请人： LAM RESEARCH CORPORATION , DORDI, Yezdi , REDEKER, Fritz, C. , BOYD, John , THIE, William , ARUNAGIRI, Tiruchirapalli , HOWALD, Arthur, M. , YOON, Hyungsuk, Alexander , VERTOMMEN, Johan
发明人： DORDI, Yezdi , REDEKER, Fritz, C. , BOYD, John , THIE, William , ARUNAGIRI, Tiruchirapalli , HOWALD, Arthur, M. , YOON, Hyungsuk, Alexander , VERTOMMEN, Johan
IPC分类号： C23C16/00
摘要： The embodiments provide processes and integrated systems that produce a metal-to-metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.

10. 发明申请

WO2009086231A3 POST-DEPOSITION CLEANING METHODS AND FORMULATIONS FOR SUBSTRATES WITH CAP LAYERS 审中-公开
标题翻译：沉积后清洁方法和具有覆盖层的基材的配方
公开(公告)号：WO2009086231A3
公开(公告)日：2009-08-27
申请号：PCT/US2008087878
申请日：2008-12-20
申请人： LAM RES CORP , KOLICS ARTUR , LI SHIJIAN , ARUNAGIRI TIRUCHIRAPALLI , THIE WILLIAM
发明人： KOLICS ARTUR , LI SHIJIAN , ARUNAGIRI TIRUCHIRAPALLI , THIE WILLIAM
IPC分类号： H01L21/302 , H01L21/306
CPC分类号： H05K3/0085 , C11D7/3209 , C11D11/0047 , H01L21/02068 , H01L21/76849 , H01L21/76861
摘要： One embodiment of the present invention is a method of fabricating an integrated circuit. The method includes providing a substrate having a metal and dielectric damascene metallization layer and depositing substantially on the metal a cap. After deposition of the cap, the substrate is cleaned with a solution comprising an amine to provide a pH for the cleaning solution of 7 to about 13. Another embodiment of the presented invention is a method of cleaning substrates. Still another embodiment of the present invention is a formulation for a cleaning solution.
摘要翻译：本发明的一个实施例是一种制造集成电路的方法。该方法包括提供具有金属和电介质镶嵌金属化层的衬底并且基本上在金属上沉积帽。在盖子沉积之后，用包含胺的溶液清洁衬底以提供7至约13的清洁溶液的pH。本发明的另一个实施例是清洁衬底的方法。本发明的又一个实施方案是用于清洁溶液的配制剂。

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