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    • 4. 发明申请
    • INTEGRATED CAPACITOR ARRANGEMENT FOR ULTRAHIGH CAPACITANCE VALUES
    • 用于超高电容值的集成电容器布置
    • WO2007054858A2
    • 2007-05-18
    • PCT/IB2006/054063
    • 2006-11-02
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.ROOZEBOOM, FreddyKLOOTWIJK, Johan, H.KEMMEREN, Antonius, L., A., M.REEFMAN, DerkVERHOEVEN, Johannes, F., C., M.
    • ROOZEBOOM, FreddyKLOOTWIJK, Johan, H.KEMMEREN, Antonius, L., A., M.REEFMAN, DerkVERHOEVEN, Johannes, F., C., M.
    • H01L28/91H01L27/0805H01L27/1087H01L29/945
    • The present invention relates to an electronic device (300) comprising at least one trench capacitor (302) that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence (308) of at least two dielectric layers (312, 316) and at least two electrically conductive layers (314, 318) is provided in the trench capacitor or on the pillar capacitor, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers. A set of internal contact pads (332, 334, 340) is provided, and each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate. By providing an individual internal contact pad for each of the electrically conductive layers, a range of switching opportunities is opened up that allows tuning the specific capacitance of the capacitor to a desired value. The electronic device of the invention thus provides a flexible trench-capacitor manufacturing platform for a multitude of combinations of electrically conductive layers with each other, or, when multiple trenches are used, between electrically conductive layers of different trench capacitors. On-chip applications such as a charge-pump circuit or a DC-to-DC voltage converter are claimed that benefit from the ultra-high capacitance density and the high breakdown voltage that can be achieved with the electronic device of the invention.
    • 本发明涉及包括至少一个沟槽电容器(302)的电子器件(300),所述沟槽电容器也可以采取反转结构的形式,即柱电容器。 在沟槽电容器或柱电容器中提供至少两个电介质层(312,316)和至少两个导电层(314,318)的交替层序列(308),使得至少两个导电层 通过所述至少两个电介质层中的相应电介质层将所述层彼此电隔离并且与所述衬底电隔离。 提供一组内部接触垫(332,334,340),并且每个内部接触垫与相应的一个导电层或与衬底连接。 通过为每个导电层提供单独的内部接触垫,打开一定范围的开关机会,允许将电容器的比电容调整到期望值。 因此,本发明的电子设备提供了用于导电层彼此之间的多种组合或者当使用多个沟槽时在不同沟槽电容器的导电层之间的柔性沟槽电容器制造平台。 据称,诸如电荷泵电路或DC-DC电压转换器之类的片上应用受益于可用本发明的电子器件实现的超高电容密度和高击穿电压。 p>
    • 8. 发明申请
    • PRODUCING A COVERED THROUGH SUBSTRATE VIA USING A TEMPORARY CAP LAYER
    • 通过使用临时盖层生产覆盖的基板
    • WO2007054867A2
    • 2007-05-18
    • PCT/IB2006/054082
    • 2006-11-03
    • KONINKLIJKE PHILIPS ELECTRONICS N.V.KLOOTWIJK, Johan, H.KEMMEREN, Antonius, L., A., M.DEKKER, RonaldVAN GRUNSVEN, Eric, C., E.ROOZEBOOM, Freddy
    • KLOOTWIJK, Johan, H.KEMMEREN, Antonius, L., A., M.DEKKER, RonaldVAN GRUNSVEN, Eric, C., E.ROOZEBOOM, Freddy
    • H01L21/768
    • H01L21/76898H01L21/764H01L23/481H01L2924/0002H01L2924/00
    • The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer. This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material. According to the second aspect of the invention, opening the covered trench from the second substrate side and allowing the cap-layer material to be removed through that opening provides a solution. Both methods of the present invention are based on the common idea of using a temporary cap-layer even in a situation where the substrate opening is permanently covered before the removal of the temporary cap-layer.
    • 本发明涉及一种制造具有至少一个覆盖通孔的基板的方法,所述至少一个覆盖通孔电连接并优选地将第一基板侧与相对的第二基板侧热连接。 所述处理涉及在第一基板侧上形成沟槽,并在热处理步骤中分解的临时牺牲盖层的顶部上保留并覆盖具有永久层的沟槽。 本发明的方法提供了即使在存在永久层的情况下除去牺牲帽层材料的分解产物而不留下痕迹或污染物的替代方法。 根据本发明的第一方面,这是通过为基底沟槽提供具有孔的外涂层而实现的。 外涂层中的孔留下去除盖层材料的分解产物的空间。 根据本发明的第二方面,从第二基板侧打开被覆盖的沟槽并且允许通过该开口去除盖层材料提供了一种解决方案。 本发明的两种方法都是基于即使在去除临时盖层之前基材开口被永久地覆盖的情况下使用临时盖层的常见思想。