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    • 1. 发明申请
    • SINGLE THRESHOLD AND SINGLE CONDUCTIVITY TYPE LOGIC
    • 单路和单电导型逻辑
    • WO2007034384A2
    • 2007-03-29
    • PCT/IB2006053281
    • 2006-09-14
    • KONINKL PHILIPS ELECTRONICS NVVAN ACHT VICTOR M GLAMBERT NICOLAASMIJIRITSKII ANDREIWOERLEE PIERRE H
    • VAN ACHT VICTOR M GLAMBERT NICOLAASMIJIRITSKII ANDREIWOERLEE PIERRE H
    • H03K19/017H03K19/096
    • A logic assembly (400) is composed from circuit elements of a single threshold and single conductivity type and comprises a logic circuitry (410) having at least a set of switches each having a main current path and a control terminal. The main current path forms a series arrangement having first and second conducting terminals coupled to power supply lines. The main current pathes being coupled to a common note that forms an output of logic assembly (400). The control terminals of said switches being coupled to clock circuitry for providing mutually non-overlapping clock signals to said control terminal. The logic assembly further comprises an output boosting circuit (420) for boosting the output of said logic assembly (400) including a capacitive means (421) for enabling supply of additional charge to the output of said logic assembly (400). It further includes a bootstrapping circuit (422) for enabling an additional supply of charge to a first end of said capacitive means, resulting in a boosted voltage at a second end of said capacitive means.
    • 逻辑组件(400)由单个阈值和单导电类型的电路元件组成,并且包括具有至少一组开关的逻辑电路(410),每组具有主电流路径和控制端子。 主电流路径形成具有耦合到电源线的第一和第二导电端子的串联装置。 主要的电流裸片耦合到形成逻辑组件(400)的输出的公共音符。 所述开关的控制端耦合到时钟电路,用于向所述控制端提供相互不重叠的时钟信号。 逻辑组件还包括用于升压所述逻辑组件(400)的输出的输出升压电路(420),包括用于使能向所述逻辑组件(400)的输出提供附加电荷的电容装置(421)。 它还包括一个自举电路(422),用于使得能够向所述电容性装置的第一端额外提供电荷,导致在所述电容装置的第二端处的升压电压。
    • 5. 发明申请
    • RADIATION-EMITTING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A DEVICE
    • 辐射发射半导体器件及其制造方法
    • WO2004042831A3
    • 2005-03-31
    • PCT/IB0304881
    • 2003-10-31
    • KONINKL PHILIPS ELECTRONICS NVWOERLEE PIERRE HT HOOFT GERT WHOLLEMAN JISK
    • WOERLEE PIERRE HT HOOFT GERT WHOLLEMAN JISK
    • H01L27/15H01L33/34H01L33/00
    • H01L33/34H01L27/15
    • Radiation-emitting semiconductor device and method of manufacturing such a device. The invention relates to a radiation-emitting semiconductor device (10) comprising a silicon-containing semiconductor body (1) and a substrate (2), which semiconductor body (1) comprises a lateral semiconductor diode positioned on an insulating layer (7) which separates the diode from the substrate (2). The lateral semiconductor diode comprises a first semiconductor region (3) of a first conductivity type and with a first doping concentration, a second semiconductor region (4) of the first or a second conductivity type opposite to the first conductivity type and with a second doping concentration which is lower than the first doping concentration, and a third semiconductor region (5) of the second conductivity type and with a third doping concentration which is higher than the second doping concentration, the first and the third region (3, 5) each being provided with a connection region (6, 8), and, during operation, radiation (S) being generated in the second region (4) due to recombination of charge carriers injected therein from the first and the third region (3, 5). According to the invention, the second semiconductor region (4) comprises a central part (4A) which is surrounded by a further part (4B) the bandgap of which is larger than the bandgap of the central part (4A). In this way, the radiation yield is increased in an indirect semiconductor material such as silicon in the central part (4A) as translation of the relatively long-living charge carriers towards a non-radiative recombination center is limited because of the barriers in the valence and conduction band in the further part (4B). Preferably, the bandgap in the further part (4B) is made larger in that the thickness of said part (4B) is so small that quantum size effects occur therein, while the central part (4A) has a thickness which is so large that such effects do not occur or substantially do not occur.
    • 辐射发射半导体器件及其制造方法。 本发明涉及一种包括含硅半导体主体(1)和基板(2)的辐射发射半导体器件(10),该半导体本体(1)包括位于绝缘层(7)上的横向半导体二极管 将二极管与衬底(2)分开。 横向半导体二极管包括第一导电类型和第一掺杂浓度的第一半导体区域(3),与第一导电类型相反的第一或第二导电类型的第二半导体区域(4)和第二掺杂浓度 低于第一掺杂浓度的浓度,以及第二导电类型的第三半导体区域(5)和高于第二掺杂浓度的第三掺杂浓度,第一和第三区域(3,5)各自 设置有连接区域(6,8),并且在操作期间,由于从第一和第三区域(3,5)注入的电荷载流子的复合,在第二区域(4)中产生辐射(S) 。 根据本发明,第二半导体区域(4)包括由带隙大于中心部分(4A)的带隙的另一部分(4B)包围的中心部分(4A)。 以这种方式,中间部分(4A)中的间接半导体材料(例如硅)的辐射产量增加,因为相对较长寿命的电荷载流子朝向非辐射复合中心的平移由于价态的障碍而受到限制 和另一部分(4B)中的导带。 优选地,使另一部分(4B)中的带隙变得更大,因为所述部分(4B)的厚度如此小以致其中出现量子尺寸效应,而中心部分(4A)具有如此大的厚度 效果不会发生或基本不发生。
    • 6. 发明申请
    • DUAL-STACK OPTICAL DATA STORAGE MEDIUM FOR WRITE ONCE RECORDING
    • 用于一次写入的双层光盘数据存储介质
    • WO2005036536A3
    • 2005-07-07
    • PCT/IB2004051994
    • 2004-10-06
    • KONINKL PHILIPS ELECTRONICS NVMARTENS HUBERT C FTIEKE BENNOWOERLEE PIERRE HVAN DEN OETELAAR RONALD J AKOPPERS WILHELMUS R
    • MARTENS HUBERT C FTIEKE BENNOWOERLEE PIERRE HVAN DEN OETELAAR RONALD J AKOPPERS WILHELMUS R
    • G11B7/24038G11B7/24
    • G11B7/24038
    • A dual-stack optical data storage medium (10) for write-once recording using a focused radiation beam (9) having a wavelength lambda of approximately 655 nm is described. The radiation beam enters through an entrance face (8) of the medium (10) during recording. The medium comprises at least one substrate (1, 7) with present on a side thereof:­ a first recording stack (6), named L0, comprising a write-once type L0 recording layer, said first recording stack L0 having an optical reflection value RL0 and an optical transmission value TL0, a second recording stack (3), named L1, comprising a write-once type L1 recording layer, said second recording stack L1 having an effective optical reflection value RLleff. The first recording stack (6) is present at a position closer to the entrance face (8) than the second recording stack. (3). A transparent spacer layer (4) is sandwiched between the recording stacks (3, 6). The reflection values RL0 and RL1 eff are within the following ranges: 0.12
    • 描述了使用波长λ约为655nm的聚焦辐射束(9)进行一次写入记录的双叠层光学数据存储介质(10)。 辐射束在记录期间通过介质(10)的入射面(8)进入。 该介质包括存在于其一侧上的至少一个衬底(1,7):称为L0的第一记录堆叠(6),其包括一次写入型L0记录层,所述第一记录堆叠L0具有光学反射值 RL0和光传输值TL0,第二记录堆栈(3),称为L1,包括一次写入型L1记录层,所述第二记录堆栈L1具有有效光学反射值RLleff。 第一记录叠层(6)存在于比第二记录叠层更靠近入射面(8)的位置。 (3)。 透明间隔层(4)夹在记录叠层(3,6)之间。 反射值RL0和RL1eff在以下范围内:0.12≤RL0≤0.18和0.12≤RL1eff≤0.18,由此实现双堆叠介质的改进的灵敏度。