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1. 发明申请

WO2011026055A3 UNIQUE MARK AND METHOD TO DETERMINE CRITICAL DIMENSION UNIFORMITY AND REGISTRATION OF RETICLES COMBINED WITH WAFER OVERLAY CAPABILITY 审中-公开
公开(公告)号：WO2011026055A3
公开(公告)日：2011-03-03
申请号：PCT/US2010/047197
申请日：2010-08-31
申请人： KLA-TENCOR CORPORATION , CHOI, DongSub , WIDMANN, Amir , SAIDIN, Zain , LASKE, Frank , ROBINSON, John
发明人： CHOI, DongSub , WIDMANN, Amir , SAIDIN, Zain , LASKE, Frank , ROBINSON, John
IPC分类号： H01L21/027 , G03F1/08
摘要： A combined metrology mark, a system, and a method for calculating alignment on a semiconductor circuit are disclosed. The combined metrology mark may include a mask misregistration structure and a wafer overlay mark structure.

2. 发明申请

WO2014168883A1 SYSTEM AND METHOD FOR THE AUTOMATIC DETERMINATION OF CRITICAL PARAMETRIC ELECTRICAL TEST PARAMETERS FOR INLINE YIELD MONITORING 审中-公开
标题翻译：用于自动测定关键参数电气测试参数的系统和方法进行在线监测
公开(公告)号：WO2014168883A1
公开(公告)日：2014-10-16
申请号：PCT/US2014/033216
申请日：2014-04-07
申请人： KLA-TENCOR CORPORATION
发明人： BANERJEE, Saibal , MAHESHWARY, Sonu , ROBINSON, John , LEGBAND, Dale
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： H01L22/14 , G05B19/41875 , G05B2219/32194 , G05B2219/45031 , H01L22/20 , Y02P90/22
摘要： Inline yield monitoring may include the use of one or more modules of algorithmic software. Inline yield monitoring may include the use of two related algorithmic software modules such as a learning and a prediction module. The learning module may learn critical PET (parametric electrical test) parameters from data of probe electrical test yields and PET attribute values. The critical PET parameters may best separate outliers and inliers in the yield data. The prediction module may use the critical PET parameters found by the learning module to predict whether a wafer is an inlier or an outlier in a probe test classification.
摘要翻译：在线产量监测可能包括使用一个或多个算法软件模块。在线产量监测可以包括使用两个相关的算法软件模块，例如学习和预测模块。学习模块可以从探头电气测试产量和PET属性值的数据中学习关键的PET（参数电气测试）参数。关键的PET参数可以最好地分离产量数据中的异常值和内在值。预测模块可以使用由学习模块发现的关键PET参数来预测晶片是否是探针测试分类中的异常值或异常值。

3. 发明申请

WO2014022682A1 INSPECTING A WAFER AND/OR PREDICTING ONE OR MORE CHARACTERISTICS OF A DEVICE BEING FORMED ON A WAFER 审中-公开
标题翻译：检查WAFER和/或预测在WAFER上形成的设备的一个或多个特性
公开(公告)号：WO2014022682A1
公开(公告)日：2014-02-06
申请号：PCT/US2013/053252
申请日：2013-08-01
申请人： KLA-TENCOR CORPORATION
发明人： MARCUCCILLI, Gino , WIDMANN, Amir , CHANG, Ellis , ROBINSON, John , PARK, Allen
IPC分类号： G01N21/956 , H01L21/027 , H01L21/66
CPC分类号： G06T7/0004 , G06T7/001 , G06T2207/10061 , G06T2207/30148
摘要： Methods for inspecting a wafer and/or predicting one or more characteristics of a device being formed on a wafer are provided. One method includes acquiring images for multiple die printed on a wafer, each of which is printed by performing a double patterning lithography process on the wafer and which include two or more die printed at nominal values of overlay for the double patterning lithography process and one or more die printed at modulated values of the overlay; comparing the images acquired for the multiple die printed at the nominal values to the images acquired for the multiple die printed at the modulated values; and detecting defects in the multiple die printed at the modulated values based on results of the comparing step.
摘要翻译：提供了检查晶片和/或预测在晶片上形成的器件的一个或多个特性的方法。一种方法包括获取用于多个印刷在晶片上的图像，每个图像通过在晶片上执行双重图案化平版印刷工艺而被打印，并且其包括两个或更多个以双重图案化平版印刷工艺的覆盖的标称值印刷的模具，以及一个或更多地以覆盖层的调制值打印; 将以标称值印刷的多个印模获得的图像与以调制值印刷的多个印模获得的图像进行比较; 并且基于比较步骤的结果检测以调制值印刷的多个印模中的缺陷。

4. 发明申请

WO2011103048A2 METHOD AND SYSTEM FOR PROVIDING PROCESS TOOL CORRECTABLES USING AN OPTIMZED SAMPLING SCHEME WITH SMART INTERPOLATION 审中-公开
标题翻译：使用优化采样方案与智能插值提供过程工具可修正性的方法和系统
公开(公告)号：WO2011103048A2
公开(公告)日：2011-08-25
申请号：PCT/US2011/024689
申请日：2011-02-14
申请人： KLA-TENCOR CORPORATION , IZIKSON, Pavel , KANDEL, Daniel , ROBINSON, John
发明人： IZIKSON, Pavel , KANDEL, Daniel , ROBINSON, John
IPC分类号： H01L21/66 , H01L21/027
CPC分类号： H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： The present invention may include performing a first measurement on a wafer of a first lot of wafers via an omniscient sampling process, calculating a first set of process tool correctables utilizing one or more results of the measurement performed via an omniscient sampling process, randomly selecting a set of field sampling locations of the wafer of a first lot of wafers, calculating a second set of process tool correctables by applying an interpolation process to the randomly selected set of field sampling locations, wherein the interpolation process utilizes values from the first set of process tool correctables for the randomly selected set of field sampling locations in order to calculate correctables for fields of the wafer of the first lot not included in the set of randomly selected fields, and determining a sub-sampling scheme by comparing the first set of process tool correctables to the second set of correctables.
摘要翻译：本发明可以包括通过无所不在的采样处理在第一批晶片的晶片上进行第一测量，利用通过全方位采样过程执行的一个或多个测量结果来计算第一组处理工具校正值，随机选择第一批晶片的晶片的一组场采样位置，通过对随机选择的一组场采样位置应用内插处理来计算第二组处理工具可校正值，其中所述内插处理利用来自第一组处理的值用于随机选择的一组场采样位置的工具可校正，以便计算不包括在随机选择的场的集合中的第一批的晶片的场的可校正性，以及通过比较第一组处理工具来确定子采样方案可纠正到第二组可纠正的。

5. 发明申请

WO2016164372A1 FEED FORWARD OF METROLOGY DATA IN A METROLOGY SYSTEM 审中-公开
标题翻译：在计量系统中进入量纲数据
公开(公告)号：WO2016164372A1
公开(公告)日：2016-10-13
申请号：PCT/US2016/026060
申请日：2016-04-05
申请人： KLA-TENCOR CORPORATION
发明人： LEVY, Ady , KANDEL, Daniel , ADEL, Michael E. , POSLAVSKY, Leonid , ROBINSON, John , MARCIANO, Tal , BRINGOLTZ, Barak , GRUNZWEIG, Tzahi , KLEIN, Dana , ITZKOVICH, Tal , CARMEL, Nadav , AMIR, Nuriel , RAMANATHAN, Vidya , CAMP, Janay , WAGNER, Mark
IPC分类号： H01L21/66 , G01N21/95
CPC分类号： G01B11/272 , G01N21/211 , G01N21/31 , G01N21/41 , G01N21/4738 , G01N21/4788 , G01N21/6489 , G01N21/9501 , G01N2021/213 , G03F7/705 , G03F7/70525 , G03F7/70533 , G03F7/70616
摘要： A metrology performance analysis system includes a metrology tool including one or more detectors and a controller communicatively coupled to the one or more detectors. The controller is configured to receive one or more metrology data sets associated with a metrology target from the metrology tool in which the one or more metrology data sets include one or more measured metrology metrics and the one or more measured metrology metrics indicate deviations from nominal values. The controller is further configured to determine relationships between the deviations from the nominal values and one or more selected semiconductor process variations, and determine one or more root causes of the deviations from the nominal values based on the relationships between values of the one or more metrology metrics and the one or more selected semiconductor process variations.
摘要翻译：计量性能分析系统包括包括一个或多个检测器的计量工具和通信地耦合到所述一个或多个检测器的控制器。所述控制器被配置为从所述计量工具接收与度量目标相关联的一个或多个度量数据集，其中所述一个或多个测量数据集包括一个或多个测量的度量度量，并且所述一个或多个测量的度量度量指示与标称值的偏差。控制器还被配置为确定与标称值和一个或多个所选择的半导体工艺变化的偏差之间的关系，并且基于一个或多个测量值的值之间的关系确定偏离标称值的一个或多个根本原因度量和一个或多个所选择的半导体工艺变化。

6. 发明申请

WO2018140534A1 OVERLAY CONTROL WITH NON-ZERO OFFSET PREDICTION 审中-公开
公开(公告)号：WO2018140534A1
公开(公告)日：2018-08-02
申请号：PCT/US2018/015104
申请日：2018-01-24
申请人： KLA-TENCOR CORPORATION
发明人： ADEL, Michael A. , MANASSEN, Amnon , PIERSON, William , LEVY, Ady , SUBRAHMANYAN, Pradeep , YERUSHALMI, Liran , CHOI, Dongsub , HEO, Hoyoung , ALUMOT, Dror , ROBINSON, John
IPC分类号： G03F7/20 , H01L21/027
摘要： A process control system may include a controller configured to receive after-development inspection (ADI) data after a lithography step for the current layer from an ADI tool, receive after etch inspection (AEI) overlay data after an exposure step of the current layer from an AEI tool, train a non-zero offset predictor with ADI data and AEI overlay data to predict a non-zero offset from input ADI data, generate values of the control parameters of the lithography tool using ADI data and non-zero offsets generated by the non-zero offset predictor, and provide the values of the control parameters to the lithography tool for fabricating the current layer on the at least one production sample.

7. 发明申请

WO2008151083A1 FEEDFORWARD/FEEDBACK LITHO PROCESS CONTROL OF STRESS AND OVERLAY 审中-公开
标题翻译：反应/反馈LITHO过程控制应力和覆盖
公开(公告)号：WO2008151083A1
公开(公告)日：2008-12-11
申请号：PCT/US2008/065421
申请日：2008-05-30
申请人： KLA-TENCOR CORPORATION , ADEL, Michael , FIELDEN, John , WIDMANN, Amir , ROBINSON, John , CHOI, Dongsub
发明人： ADEL, Michael , FIELDEN, John , WIDMANN, Amir , ROBINSON, John , CHOI, Dongsub
IPC分类号： G06F19/00
CPC分类号： G03F7/70258 , G03F7/705 , G03F7/70525 , G03F7/70616 , G03F7/70783
摘要： A method and apparatus for process control in a lithographic process are described. Metrology may be performed on a substrate either before or after performing a lithographic patterning process on the substrate. One or more correctables to the lithographic patterning process may be generated based on the metrology. The lithographic patterning process performed on the substrate (or a subsequent substrate) may be adjusted with the correctables.
摘要翻译：描述了光刻工艺中的工艺控制的方法和装置。在基板上执行光刻图案化处理之前或之后，可以在基板上进行计量。可以基于计量产生光刻图案化过程的一个或多个可修改的内容。可以用可校正的方法来调整在衬底（或随后的衬底）上执行的光刻图案化工艺。

8. 发明申请

WO2008131422A1 METHODS AND SYSTEMS FOR CREATING OR PERFORMING A DYNAMIC SAMPLING SCHEME FOR A PROCESS DURING WHICH MEASUREMENTS ARE PERFORMED ON WAFERS 审中-公开
标题翻译：用于创建或执行测量过程中的过程的动态采样方案的方法和系统
公开(公告)号：WO2008131422A1
公开(公告)日：2008-10-30
申请号：PCT/US2008/061299
申请日：2008-04-23
申请人： KLA-TENCOR CORPORATION , IZIKSON, Pavel , ROBINSON, John , ADEL, Mike , WIDMANN, Amir , DONGSUB, Choi , MARCHELLI, Anat
发明人： IZIKSON, Pavel , ROBINSON, John , ADEL, Mike , WIDMANN, Amir , DONGSUB, Choi , MARCHELLI, Anat
IPC分类号： G05B23/02
CPC分类号： G05B21/02 , G03F7/70508 , G03F7/70625 , G03F7/70633
摘要： Various methods and systems for creating or performing a dynamic sampling scheme for a process during which measurements are performed on wafers are provided. One method for creating a dynamic sampling scheme for a process during which measurements are performed on wafers includes performing the measurements on all of the wafers in at least one lot at all measurement spots on the wafers. The method also includes determining an optimal sampling scheme, an enhanced sampling scheme, a reduced sampling scheme, and thresholds for the dynamic sampling scheme for the process based on results of the measurements. The thresholds correspond to values of the measurements at which the optimal sampling scheme, the enhanced sampling scheme, and the reduced sampling scheme are to be used for the process.
摘要翻译：提供了用于创建或执行在晶片上执行测量的过程的动态采样方案的各种方法和系统。用于为在晶片上进行测量的过程创建动态采样方案的一种方法包括在晶片上的所有测量点处对至少一批中的所有晶片执行测量。该方法还包括基于测量结果确定用于该过程的动态采样方案的最佳采样方案，增强采样方案，减少采样方案和阈值。阈值对应于最佳采样方案，增强采样方案和减少采样方案将用于该过程的测量值。

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