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1. 发明申请

WO2011026055A3 UNIQUE MARK AND METHOD TO DETERMINE CRITICAL DIMENSION UNIFORMITY AND REGISTRATION OF RETICLES COMBINED WITH WAFER OVERLAY CAPABILITY 审中-公开
公开(公告)号：WO2011026055A3
公开(公告)日：2011-03-03
申请号：PCT/US2010/047197
申请日：2010-08-31
申请人： KLA-TENCOR CORPORATION , CHOI, DongSub , WIDMANN, Amir , SAIDIN, Zain , LASKE, Frank , ROBINSON, John
发明人： CHOI, DongSub , WIDMANN, Amir , SAIDIN, Zain , LASKE, Frank , ROBINSON, John
IPC分类号： H01L21/027 , G03F1/08
摘要： A combined metrology mark, a system, and a method for calculating alignment on a semiconductor circuit are disclosed. The combined metrology mark may include a mask misregistration structure and a wafer overlay mark structure.

2. 发明申请

WO2019126079A1 METHOD FOR MEASURING POSITIONS OF STRUCTURES ON A SUBSTRATE AND COMPUTER PROGRAM PRODUCT FOR DETERMINING POSITIONS OF STRUCTURES ON A SUBSTRATE 审中-公开
公开(公告)号：WO2019126079A1
公开(公告)日：2019-06-27
申请号：PCT/US2018/066092
申请日：2018-12-17
申请人： KLA-TENCOR CORPORATION
发明人： ACHE, Oliver , LASKE, Frank
IPC分类号： H01L21/66
CPC分类号： G01B11/005 , G01B2210/56
摘要： A method with increased throughput for measuring positions of structures on a substrate is disclosed. The substrate is taken from a load port of a metrology machine and is placed immediately in a stage of the metrology machine. At least two measurement loops are carried out, wherein a first measurement loop is started at a time when a substrate temperature is different from the temperature at the stage, and at least one second measurement loop is started at a time after the first measurement loop when the substrate temperature is different from the temperature at the stage. A model is used to calculate from the measured data, taken while there is a temperature mismatch between the stage and the substrate, a real grid of positions of structures on the substrate, corresponding to a situation where the temperature of the stage matches the temperature of the substrate.

3. 发明申请

WO2019113262A1 SYSTEMS AND METHODS FOR DEVICE-CORRELATED OVERLAY METROLOGY 审中-公开
公开(公告)号：WO2019113262A1
公开(公告)日：2019-06-13
申请号：PCT/US2018/064145
申请日：2018-12-06
申请人： KLA-TENCOR CORPORATION
发明人： LASKE, Frank , POHLMANN, Ulrich , EYRING, Stefan , GUTMAN, Nadav
IPC分类号： G03F7/20
摘要： An overlay metrology system may measure a first-layer pattern placement distance between a pattern of device features and a pattern of reference features on a first layer of an overlay target on a sample. The system may further measure, subsequent to fabricating a second layer including at least the pattern of device features and the pattern of reference features, a second-layer pattern placement distance between the pattern of device features and the pattern of reference features on the second layer. The system may further measure a reference overlay based on relative positions of the pattern of reference features on the first layer and the second layer. The system may further determine a device-relevant overlay for the pattern of device-scale features by adjusting the reference overlay with a difference between the first-layer pattern placement distance and the second-layer pattern placement distance.

4. 发明申请

WO2017165308A1 SYSTEM AND METHOD FOR DRIFT COMPENSATION ON AN ELECTRON BEAM BASED CHARACTERIZATION TOOL 审中-公开
标题翻译：用于基于电子束的表征工具上的漂移补偿的系统和方法
公开(公告)号：WO2017165308A1
公开(公告)日：2017-09-28
申请号：PCT/US2017/023239
申请日：2017-03-20
申请人： KLA-TENCOR CORPORATION
发明人： LASKE, Frank , SEARS, Christopher
IPC分类号： H01J37/153 , H01J37/28
摘要： A scanning electron microscopy system includes an electron beam source, a sample stage that includes a first alignment feature, an electron-optical column that includes electron-optical elements that include a lens having a second alignment feature, and an alignment plate having a third alignment feature. The system additionally includes a reference target, and a detector assembly. The electron-optical elements configurable to simultaneously focus on a substrate and the reference target. The system also includes a controller communicatively coupled to at least one or more portions of the electron optical column and the sample stage, to make adjustments in order to align the electron beam to at least one of the first set of alignment features, the second set of alignment features, the third set of alignment features, the reference target or the substrate. The controller also makies adjustments to simultaneously focus the electron beam at a first and second high resolution plane.
摘要翻译：扫描电子显微镜系统包括电子束源，包括第一对准特征的样品台，包括电子光学元件的电子光学列，所述电子光学元件包括具有第二对准特征的透镜，以及具有第三对准特征的对准板。该系统还包括参考目标和检测器组件。电子光学元件可配置为同时聚焦在衬底和参考目标上。该系统还包括通信地耦合到电子光学列和样品台的至少一个或多个部分的控制器，以进行调节以将电子束对准到第一组对准特征中的至少一个，第二组对准特征，第三组对准特征，参考目标或衬底。控制器还可以进行调整，以同时将电子束聚焦在第一和第二高分辨率平面上。

5. 发明申请

WO2015094818A1 A METHOD FOR MEASURING POSITIONS OF STRUCTURES ON A MASK AND THEREBY DETERMINING MASK MANUFACTURING ERRORS 审中-公开
标题翻译：测量面板结构位置并确定面罩制造错误的方法
公开(公告)号：WO2015094818A1
公开(公告)日：2015-06-25
申请号：PCT/US2014/069348
申请日：2014-12-09
申请人： KLA-TENCOR CORPORATION
发明人： LASKE, Frank , DANESHPANAH, Mohammad M. , CZERKAS, Slawomir , WAGNER, Mark
IPC分类号： H01L21/66
CPC分类号： G06T7/001 , G03F1/84 , G06T2207/30148
摘要： The invention discloses a method for measuring positions of structures on a mask and thereby determining mask manufacturing errors. It is shown, that from a plurality measurement sites an influence of an optical proximity effect on a position measurement of structures on the mask, is determined with a metrology tool. A rendered image of the data representation of the structures is obtained. Additionally, at least one optical image of the pattern within the area on the mask is captured with the imaging system of the metrology tool. The field of view of the metrology tool is approximately identical to the size of the selected area of the mask design data. Finally, a residual is determined, which shows the manufacturing based proximity effect.
摘要翻译：本发明公开了一种用于测量掩模上结构位置的方法，从而确定掩模制造误差。示出了从多个测量位置，使用计量工具确定光学邻近效应对掩模上的结构的位置测量的影响。获得结构的数据表示的渲染图像。另外，用计量工具的成像系统捕获掩模区域内的图案的至少一个光学图像。计量工具的视野与掩模设计数据的选定区域的大小大致相同。最后，确定残差，显示了基于制造的邻近效应。

6. 发明申请

WO2019173171A1 METROLOGY AND CONTROL OF OVERLAY AND EDGE PLACEMENT ERRORS 审中-公开
公开(公告)号：WO2019173171A1
公开(公告)日：2019-09-12
申请号：PCT/US2019/020471
申请日：2019-03-04
申请人： KLA-TENCOR CORPORATION
发明人： SHCHEGROV, Andrei V. , LASKE, Frank , GUTMAN, Nadav
IPC分类号： G03F7/20
摘要： An overlay metrology system may include a controller to generate optical tool error adjustments for a hybrid overlay target including optically-resolvable features and device-scale features by measuring a difference between an optical overlay measurement based on the optically-resolvable features and a device-scale overlay measurement based on the device-scale features, generate target-to-device adjustments for the hybrid overlay target based on positions of features within the device area, determine device-relevant overlay measurements for one or more locations in the device area based on at least one of the optical overlay measurement, the optical tool error adjustments, or the target-to-device adjustments, and provide overlay correctables for the device area to a lithography tool to modify exposure conditions for at least one subsequent exposure based on the device-relevant overlay measurements.

7. 发明申请

WO2018063921A1 MEASUREMENT OF OVERLAY AND EDGE PLACEMENT ERRORS WITH AN ELECTRON BEAM COLUMN ARRAY 审中-公开
标题翻译：用电子束柱阵列测量覆盖和边缘放置误差
公开(公告)号：WO2018063921A1
公开(公告)日：2018-04-05
申请号：PCT/US2017/052816
申请日：2017-09-21
申请人： KLA-TENCOR CORPORATION
发明人： NEIL, Mark , LASKE, Frank
IPC分类号： H01L21/66 , H01L21/67
摘要： Methods and systems for performing measurements of multiple die with an array of electron beam columns are presented herein. The wafer is scanned in a direction parallel to the die rows disposed on the wafer. The electron beam measurement columns are spatially separated in a column alignment direction. The wafer is scanned in a direction that is oriented at an oblique angle with respect to the column alignment direction such that each electron beam column measures the same row of die features on different die during the same wafer pass. The wafer is oriented with respect to the array of electron beam columns by rotating the wafer, rotating the electron beam columns, or both. In further aspects, each measurement beam is deflected to correct alignment errors between each column and the corresponding die row to be measured and to correct wafer positioning errors reported by the wafer positioning system.
摘要翻译：这里给出了用于利用电子束柱阵列执行多个管芯的测量的方法和系统。晶片在平行于晶片上设置的模排的方向上被扫描。电子束测量柱在列对准方向上在空间上分离。在相对于列对准方向倾斜取向的方向上扫描晶片，使得每个电子束柱在同一晶片通过期间测量不同裸片上的相同行模具特征。通过旋转晶片，旋转电子束柱，或两者来使晶片相对于电子束柱的阵列取向。在进一步的方面中，每个测量光束被偏转以校正每列与待测量的相应模排之间的对准误差并校正由晶片定位系统报告的晶片定位误差。

8. 发明申请

WO2015153872A1 A METHOD, SYSTEM AND COMPUTER PROGRAM PRODUCT FOR GENERATING HIGH DENSITY REGISTRATION MAPS FOR MASKS 审中-公开
标题翻译：用于生成面罩高密度注册码的方法，系统和计算机程序产品
公开(公告)号：WO2015153872A1
公开(公告)日：2015-10-08
申请号：PCT/US2015/024060
申请日：2015-04-02
申请人： KLA-TENCOR CORPORATION
发明人： LASKE, Frank , DANESHPANAH, Mohammad M. , SUBRAHMANYAN, Pradeep , XIONG, Yalin
IPC分类号： H01L21/027 , H01L21/66
CPC分类号： G06F17/5081 , G03F1/84
摘要： A method and system for generating high density registration maps for masks is disclosed. A data preparation module generates a plurality of anchor points of the mask. Additionally, the data preparation module generates a plurality of sample points. Weights are generated as well in the data preparation module and the weights are used later on in the data fusion module. The positions of anchor points are measured with a registration tool in a mask coordinate system according to a generated recipe. The positions of sample points are determined with an inspection tool in a mask coordinate system according to a generated recipe. The measured positions of the anchor points and the measured positions of the sample points are passed to a data fusion module where a registration map is determined.
摘要翻译：公开了一种用于产生掩模的高密度登记图的方法和系统。数据准备模块生成掩模的多个锚定点。此外，数据准备模块生成多个采样点。在数据准备模块中也产生权重，后来在数据融合模块中使用权重。根据生成的配方，使用掩模坐标系中的配准工具测量锚点的位置。根据生成的配方，采用掩模坐标系中的检查工具确定采样点的位置。锚定点的测量位置和采样点的测量位置被传递到确定了注册图的数据融合模块。

9. 发明申请

WO2014172473A1 METHOD FOR CORRECTING POSITION MEASUREMENTS FOR OPTICAL ERRORS AND METHOD FOR DETERMINING MASK WRITER ERRORS 审中-公开
标题翻译：用于校正光学误差的位置测量的方法和用于确定掩蔽误差的方法
公开(公告)号：WO2014172473A1
公开(公告)日：2014-10-23
申请号：PCT/US2014/034391
申请日：2014-04-16
申请人： KLA-TENCOR CORPORATION
发明人： EYRING, Stefan , ACHE, Oliver , LASKE, Frank
IPC分类号： H01L21/66 , H01L21/027
CPC分类号： G03F1/84 , G03F7/70616
摘要： A method is disclosed for correcting errors introduced by optical distortions or aberrations in the measured values of coordinates of targets of an array of targets, like for example structures on a wafer or a photolithography mask. The array of targets is placed into a field of view of an imaging system via which the coordinates are to be measured. The array of targets is placed at different relative positions with respect to the field of view, and for each relative position the coordinates of the targets relative to the array of targets are determined by measurements. From the results of these measurements an alignment function, giving a correction for optical errors as a function of the position in the field of view, is derived. The measured coordinates are corrected by the alignment function. The corrected coordinates can be used to identify registration errors of a mask writer.
摘要翻译：公开了一种用于校正由目标阵列的目标坐标的测量值中的光学失真或像差引入的误差的方法，例如晶片或光刻掩模上的结构。目标阵列被放置在成像系统的视场中，坐标将被测量。目标阵列相对于视场位于不同的相对位置，并且对于每个相对位置，靶相对于目标阵列的坐标由测量确定。从这些测量结果可得出对准函数，作为视场中的位置的函数的光学误差的校正。测量的坐标通过对准功能进行校正。校正的坐标可用于识别掩码写入器的注册错误。

10. 发明申请

WO2019118306A1 OVERLAY MEASUREMENTS OF OVERLAPPING TARGET STRUCTURES BASED ON SYMMETRY OF SCANNING ELECTRON BEAM SIGNALS 审中-公开
公开(公告)号：WO2019118306A1
公开(公告)日：2019-06-20
申请号：PCT/US2018/064641
申请日：2018-12-10
申请人： KLA-TENCOR CORPORATION
发明人： GUTMAN, Nadav , AMIT, Eran , EYRING, Stefan , PATHANGI SRIRAMAN, Hari , LASKE, Frank , POHLMANN, Ulrich , HEIDRICH, Thomas
IPC分类号： G03F7/20 , G01N21/84 , H01L21/66 , H01L21/67
摘要： An overlay metrology system includes a particle-beam metrology tool to scan a particle beam across an overlay target on a sample including a first-layer target element and a second-layer target element. The overlay metrology system may further include a controller to receive a scan signal from the particle-beam metrology tool, determine symmetry measurements for the scan signal with respect to symmetry metrics, and generate an overlay measurement between the first layer and the second layer based on the symmetry measurements in which an asymmetry of the scan signal is indicative of a misalignment of the second-layer target element with respect to the first-layer target element and a value of the overlay measurement is based on the symmetry measurements.

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