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    • 9. 发明申请
    • SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCTION THEREOF
    • 半导体器件及其制造方法
    • WO2008059350A3
    • 2008-07-10
    • PCT/IB2007003477
    • 2007-11-13
    • TOYOTA MOTOR CO LTDTANAKA HIROAKI
    • TANAKA HIROAKI
    • H01L29/739H01L21/331H01L29/10
    • H01L29/7397H01L29/1095H01L29/66348
    • A semiconductor device has a drift region (20) (third semiconductor region) of an n-type (first conductivity type); a body region (50) (second semiconductor region) of a p-type (second conductivity type) provided on the drift region (20); an emitter region (60) (first semiconductor region) of the n-type formed in the top surface of the body region (50) and separated from the drift region (20) by the body region (50); a trench (14) extending from the top surface of the emitter region (60) through the body region (50) into the drift region (20); a trench gate electrode (13) filled in the trench (14); and a semiconductor region (70) (fourth semiconductor region) of the p-type formed in contact with side faces of the trench protruding into the drift region (20). Therefore, the semiconductor device can suppress a surge voltage at turn-off, and can be produced easily.
    • 半导体装置具有n型(第1导电型)的漂移区域(20)(第3半导体区域) 设置在漂移区域20上的p型(第2导电型)的体区域50(第2半导体区域) 形成在本体区域50的上表面中且通过本体区域50与漂移区域20分离的n型发射极区域60(第一半导体区域); 从发射极区域(60)的顶部表面穿过体区域(50)延伸到漂移区域(20)中的沟槽(14); 填充在沟槽(14)中的沟槽栅电极(13); 和形成为与突出到漂移区(20)中的沟槽的侧面接触的p型的半导体区域(70)(第四半导体区域)。 因此,半导体器件可以抑制关断时的浪涌电压,并且可以容易地产生。