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1. 发明申请

WO2007139487A1 SCHOTTKY DIODE WITH INCORPORATED PN- JUNCTIONS 审中-公开
标题翻译：肖特基二极管与并入PN结
公开(公告)号：WO2007139487A1
公开(公告)日：2007-12-06
申请号：PCT/SE2007/050342
申请日：2007-05-22
申请人： CREE SWEDEN AB , HARRIS, Christopher , BASCERI, Cem , BERTILSSON, Kent
发明人： HARRIS, Christopher , BASCERI, Cem , BERTILSSON, Kent
IPC分类号： H01L29/872 , H01L21/761
CPC分类号： H01L29/872 , H01L21/8213 , H01L27/0255 , H01L27/0814 , H01L29/0619 , H01L29/16 , H01L29/1602 , H01L29/1608 , H01L29/8611
摘要： A semiconductor device of unpopular type has Schottky-contacts (6) laterally separated by regions in the form of additional layers (7, 7") of semiconductor material on top of a drift layer (3). Said additional layers being doped according to a conductivity type being opposite to the one of the drift layer. At least one (7") of the additional layers has a substantially larger lateral extension and thereby larger area of the interface to the drift layer than adjacent such layers (7) for facilitating the building-up of a sufficient voltage between that layer and the drift layer for injecting minority charge carriers into the drift layer upon surge for surge protection.
摘要翻译：不受欢迎类型的半导体器件具有由漂移层（3）顶部上的半导体材料的附加层（7,7“）形式的区域横向隔开的肖特基触点（6），所述附加层根据导电类型与漂移层中的一个相反，至少一个（7“）的附加层具有相对较大的横向延伸，从而与相邻的这些层（7）相比，漂移层的界面的面积更大，以便于在该层和漂移层之间建立足够的电压，用于在浪涌保护的浪涌时将少数电荷载体注入漂移层。

2. 发明申请

WO2007081964A2 SILICON CARBIDE DIMPLED SUBSTRATE 审中-公开
标题翻译：硅碳化硅基板
公开(公告)号：WO2007081964A2
公开(公告)日：2007-07-19
申请号：PCT/US2007/000558
申请日：2007-01-10
申请人： CREE, INC. , HARRIS, Christopher , BASCERI, Cem , GEHRKE, Thomas , BALKAS, Cengiz
发明人： HARRIS, Christopher , BASCERI, Cem , GEHRKE, Thomas , BALKAS, Cengiz
IPC分类号： H01L29/30
CPC分类号： H01L33/38 , H01L21/0475 , H01L23/367 , H01L23/3738 , H01L29/0657 , H01L29/1608 , H01L29/20 , H01L29/2003 , H01L29/417 , H01L33/0079 , H01L33/32 , H01L2924/0002 , H01L2924/10158 , H01L2933/0016 , H01L2924/00
摘要： A dimpled substrate and method of making including a substrate of high thermal conductivity having a first main surface and a second main surface opposite the first main surface. Active epitaxial layers are formed on the first main surface of the substrate. Dimples are formed as extending from the second main surface into the substrate toward the first main surface. An electrical contact of low resistance material is disposed on the second main surface and within the dimples. A back contact of low resistance and low loss is thus provided while maintaining the substrate as an effective heat sink.
摘要翻译：一种凹凸基板及其制造方法，包括具有第一主表面和与第一主表面相对的第二主表面的具有高导热性的基板。在衬底的第一主表面上形成有源外延层。凹坑形成为从第二主表面延伸到基板朝向第一主表面。低电阻材料的电触点设置在第二主表面和凹坑内。因此，在保持基板作为有效散热器的同时提供低电阻和低损耗的背接触。

3. 发明申请

WO2007011294A1 SEMICONDUCTOR DEVICE AND A METHOD FOR PRODUCTION THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：WO2007011294A1
公开(公告)日：2007-01-25
申请号：PCT/SE2006/000902
申请日：2006-07-20
申请人： CREE, INC. , HARRIS, Christopher , BASCERI, Cem
发明人： HARRIS, Christopher , BASCERI, Cem
IPC分类号： H01L29/06 , H01L21/20 , H01L21/22 , H01L21/26
CPC分类号： H01L29/872 , H01L29/0619 , H01L29/1608 , H01L29/66143
摘要： A semiconductor device comprises a first layer (1) of a wide band gap semiconductor material doped according to a first conductivity type and a second layer (3) on top thereof designed to form a junction blocking current in the reverse biased state of the device at the interface to said first layer. The device comprises extension means for extending a termination of the junction laterally with respect to the lateral border (6) of the second layer. This extension means comprises a plurality of rings (16-21) in juxtaposition laterally surrounding said junction (15) and being arranged as seen in the lateral direction away from said junction alternatively a ring (16-18) of a semiconductor material of a second conductivity type opposite to that of said first layer and a ring (19-21) of a semi-insulating material.
摘要翻译：半导体器件包括根据第一导电类型掺杂的宽带隙半导体材料的第一层（1）和在其顶部上的第二层（3），其被设计成在器件的反向偏压状态下形成结阻滞电流与所述第一层的接口。该装置包括用于相对于第二层的侧边缘（6）横向延伸接头终端的延伸装置。这种延伸装置包括多个并排的环（16-21），其横向围绕所述接合部分（15）并且沿横向方向远离所述接头交替布置，交替地布置为第二部分的半导体材料的环（16-18）与所述第一层相反的导电类型和半绝缘材料的环（19-21）。

4. 发明申请

WO2013032691A2 ENGINEERED SUBSTRATES FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
标题翻译：用于半导体器件的工程基底及相关系统和方法
公开(公告)号：WO2013032691A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/050787
申请日：2012-08-14
申请人： MICRON TECHNOLOGY, INC. , SCHUBERT, Martin, F. , BASCERI, Cem , ODNOBLYUDOV, Vladimir , KURTH, Casey , GEHRKE, Thomas
发明人： SCHUBERT, Martin, F. , BASCERI, Cem , ODNOBLYUDOV, Vladimir , KURTH, Casey , GEHRKE, Thomas
IPC分类号： H01L21/20 , H01L21/02 , H01L33/00
CPC分类号： H01L33/0079 , H01L33/0062 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/02 , H01L33/16 , H01L33/46
摘要： Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.
摘要翻译：这里公开了用于半导体器件的工程衬底。根据特定实施例的器件包括具有包括发射辐射的有源区的多个半导体材料的换能器结构。该设备进一步包括具有第一材料和第二材料的工程衬底，第一材料和第二材料中的至少一个具有与至少一个所述多个热膨胀系数至少近似匹配的热膨胀系数的半导体材料。第一材料和第二材料中的至少一个被设置为接收来自有源区域的辐射并且修改光的特性。

5. 发明申请

WO2005021831A1 MICROFEATURE WORKPIECE PROCESSING APPARATUS AND METHODS FOR BATCH DEPOSITION OF MATERIALS ON MICROFEATURE WORKPIECES 审中-公开
标题翻译：微型工件加工设备和方法在微生物工件上沉积材料
公开(公告)号：WO2005021831A1
公开(公告)日：2005-03-10
申请号：PCT/US2004/027012
申请日：2004-08-18
申请人： MICRON TECHNOLOGY, INC. , ZHENG, Lingyi, A. , DOAN, Trung, T. , BREINER, Lyle, D. , PING, Er-Xuan , WEIMER, Ronald, A. , KUBISTA, David, J. , BEAMAN, Kevin, L. , BASCERI, Cem
发明人： ZHENG, Lingyi, A. , DOAN, Trung, T. , BREINER, Lyle, D. , PING, Er-Xuan , WEIMER, Ronald, A. , KUBISTA, David, J. , BEAMAN, Kevin, L. , BASCERI, Cem
IPC分类号： C23C16/458
CPC分类号： C23C16/4583 , C23C16/45546 , C23C16/45578 , Y10S206/832
摘要： The present disclosure describes apparatus and methods for processing microfeature workpieces, e.g., by depositing material on a microelectronic semiconductor using atomic layer deposition. Some of these apparatus include microfeature workpiece holders that include gas distributors. One exemplary implementation provides a microfeature workpiece holder adapted to hold a plurality of microfeature workpieces. This workpiece holder includes a plurality of workpiece supports and a gas distributor. The workpiece supports are adapted to support a plurality of microfeature workpieces in a spaced-apart relationship to define a process space adjacent a surface of each microfeature workpiece. The gas distributor includes an inlet and a plurality of outlets, with each of the outlets positioned to direct a flow of process gas into one of the process spaces.
摘要翻译：本公开描述了用于处理微特征工件的装置和方法，例如通过使用原子层沉积在微电子半导体上沉积材料。这些设备中的一些包括微型工件保持器，其包括气体分配器。一个示例性实施例提供了适于保持多个微特征工件的微特征工件保持器。该工件保持器包括多个工件支撑件和气体分配器。工件支撑件适于以间隔的关系支撑多个微特征工件以限定与每个微特征工件的表面相邻的工艺空间。气体分配器包括入口和多个出口，其中每个出口被定位成将处理气体流引导到处理空间中的一个中。

6. 发明申请

WO2008033994A1 MICROPIPE-FREE SILICON CARBIDE AND RELATED METHOD OF MANUFACTURE 审中-公开
标题翻译：无碳化硅和相关的制造方法
公开(公告)号：WO2008033994A1
公开(公告)日：2008-03-20
申请号：PCT/US2007/078385
申请日：2007-09-13
申请人： CREE, INC. , BASCERI, Cem , KHLEBNIKOV, Yuri , KHLEBNIKOV, Igor , BALKAS, Cengiz , SILAN, Murat, N. , HOBGOOD, Hudson, McD. , CARTER, Calvin, H., Jr. , BALAKRISHNA, Vijay , LEONARD, Robert, T. , POWELL, Adrian, R. , TSVETKOV, Valeri , JENNY, Jason, R.
发明人： BASCERI, Cem , KHLEBNIKOV, Yuri , KHLEBNIKOV, Igor , BALKAS, Cengiz , SILAN, Murat, N. , HOBGOOD, Hudson, McD. , CARTER, Calvin, H., Jr. , BALAKRISHNA, Vijay , LEONARD, Robert, T. , POWELL, Adrian, R. , TSVETKOV, Valeri , JENNY, Jason, R.
IPC分类号： H01L21/36
CPC分类号： H01L29/1608 , C30B23/002 , C30B23/005 , C30B29/36 , H01L21/02378 , H01L21/02433 , H01L21/02529 , H01L21/0254 , H01L21/02631 , H01L21/02634 , Y10T428/21
摘要： Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.
摘要翻译：公开了无微波，单晶，碳化硅（SiC）和相关制造方法。通过将源材料和种子材料放置在升华系统的反应坩埚中的种子保持器上来生长SiC，其中包括源材料，反应坩埚和种子保持器的升华系统的构成成分基本上没有无意的杂质。通过控制PVT过程中生长温度，生长压力，SiC升华通量和组成以及种子材料或种子材料上生长的SiC晶体之间的温度梯度，消除了微管诱导过程的不稳定性，在种子材料上生长游离的SiC晶体。

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