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    • 2. 发明申请
    • AN APPARATUS FOR HOLDING A SEMICONDUCTOR WAFER
    • 用于保持半导体波形的装置
    • WO0021119A8
    • 2000-10-19
    • PCT/US9921554
    • 1999-09-17
    • UNION OIL CO
    • WINGO LARRY S
    • H01L21/673H01L21/00
    • H01L21/67309Y10S206/832Y10S269/902Y10S269/904Y10S269/909Y10S414/135Y10S414/141Y10T29/49996
    • An apparatus for holding a plurality of semi-conductor wafers during heat treatment of the wafers in a furnace comprises a plurality of rails extending essentially vertically between a top and bottom plate. Each rail contains a plurality of teeth arranged such that the space between adjacent teeth can receive a portion of a single semiconductor wafer. Each tooth contains a raised support structure, typically a ledge, located on the top surface of each tooth for supporting the wafer, usually from the edge of the wafer inward to a point located from the center of the wafer a distance equal to between about 25 % and about 75 % of the wafer's radius. Such an apparatus with its relatively long teeth is especially designed to uniformly support larger wafers, i.e., wafers having a nominal diameter greater than about 200 millimeters, such that their own weight does not cause the wafers to sag and thereby produce crystal dislocations or slip when the wafers are heated to high temperatures.
    • 在炉中的晶片的热处理期间保持多个半导体晶片的装置包括在顶板和底板之间基本垂直延伸的多个轨道。 每个轨道包含多个齿,其布置成使得相邻齿之间的空间可以容纳单个半导体晶片的一部分。 每个齿都包含凸起的支撑结构,通常为凸缘,位于每个齿的顶表面上,用于支撑晶片,通常从晶片的边缘向内到达位于晶片中心的点,距离等于约25 %和约75%的晶圆半径。 具有相对长的齿的这种装置特别设计成均匀地支撑较大的晶片,即具有大于约200毫米的公称直径的晶片,使得它们自身的重量不会导致晶片下垂,从而产生晶体位错或滑动, 将晶片加热至高温。
    • 5. 发明申请
    • SHIPPER WITH TOOTH DESIGN FOR IMPROVED LOADING
    • 具有改进装载的牙齿设计的运输商
    • WO2005036609A2
    • 2005-04-21
    • PCT/US2004/033641
    • 2004-10-12
    • ENTEGRIS, INC.DUBAN-HU, Joy, A.KOLBOW, Steven, P.
    • DUBAN-HU, Joy, A.KOLBOW, Steven, P.
    • H01L
    • G11B33/0444Y10S206/832
    • A shipper for memory disks comprises a cassette having an open top and an open bottom, a top cover to cover the open top, and a bottom cover to cover the bottom. The body portion has opposing side walls and opposing end walls. The two side walls each have with a vertical upper portions and an inwardly converging bottom portion. Said sidewalls have inwardly facing elongate teeth or spacers defining slots to hold the substrates in a vertically positioned and spaced array. Each tooth is continuous from the open top to the open bottom and each tooth has a upper vertical portion at the vertical upper portion of the side wall and a converging lower portion at the bottom portion of the side walls. The converging lower portion of each tooth follows the convergence of the bottom portions of the sidewalls. The converging lower portion of each tooth is configured to be different than the configuration of the tooth at the upper portion providing for improved performance in receiving disks to minimize or eliminate the incomplete receipt of disks in the slots such as by the disks catching and resting on the top of the teeth.
    • 用于存储盘的托运器包括具有开口顶部和敞开的底部的盒,覆盖开放顶部的顶盖和用于覆盖底部的底盖。 主体部分具有相对的侧壁和相对的端壁。 两个侧壁各自具有垂直的上部和向内会聚的底部。 所述侧壁具有向内的细长齿或间隔物,其限定狭槽以将基底保持在垂直定位和间隔的阵列中。 每个齿从敞开的顶部到开放的底部是连续的,并且每个齿在侧壁的垂直上部具有上垂直部分,在侧壁的底部具有会聚下部。 每个齿的会聚下部跟随侧壁的底部的会聚。 每个齿的会聚下部构造成不同于在上部的齿的构造,以提供接收盘中的改进的性能以最小化或消除槽中的盘的不完全接收,例如通过盘捕获并搁置 顶部的牙齿。
    • 9. 发明申请
    • AN APPARATUS FOR HOLDING A SEMICONDUCTOR WAFER
    • 用于半导体晶片的支撑装置
    • WO00021119A1
    • 2000-04-13
    • PCT/US1999/021554
    • 1999-09-17
    • H01L21/673H01L21/00
    • H01L21/67309Y10S206/832Y10S269/902Y10S269/904Y10S269/909Y10S414/135Y10S414/141Y10T29/49996
    • An apparatus for holding a plurality of semi-conductor wafers during heat treatment of the wafers in a furnace comprises a plurality of rails extending essentially vertically between a top and bottom plate. Each rail contains a plurality of teeth arranged such that the space between adjacent teeth can receive a portion of a single semiconductor wafer. Each tooth contains a raised support structure, typically a ledge, located on the top surface of each tooth for supporting the wafer, usually from the edge of the wafer inward to a point located from the center of the wafer a distance equal to between about 25 % and about 75 % of the wafer's radius. Such an apparatus with its relatively long teeth is especially designed to uniformly support larger wafers, i.e., wafers having a nominal diameter greater than about 200 millimeters, such that their own weight does not cause the wafers to sag and thereby produce crystal dislocations or slip when the wafers are heated to high temperatures.
    • 本发明涉及一种用于在烘箱中对晶片进行热处理期间支撑多个半导体晶片的装置。 该装置包括在上板和下板之间基本垂直延伸的多个立柱。 每个立柱包括多个齿,所述多个齿布置成使得两个相邻齿之间的空间可以接收单个半导体晶片的一部分。 每颗牙齿包括位于每颗牙齿上表面上的凸起支撑结构,通常为凸缘。 该结构通常将晶片从其边缘支撑到远离中心的点上,晶片半径的25%和75%之间。 这种牙齿较长的装置专门设计用于均匀支撑大切片,例如标称直径超过200毫米的切片,因此其自重不会导致向下弯曲。 当切片加热到高温时引起位错或晶体滑移。
    • 10. 发明申请
    • METHOD AND DEVICE FOR HEAT-TREATING SINGLE-CRYSTAL SILICON WAFER, SINGLE-CRYSTAL SILICON WAFER, AND PROCESS FOR PRODUCING SINGLE-CRYSTAL SILICON WAFER
    • 用于加热单晶硅波片,单晶硅波片的方法和装置,以及用于生产单晶硅波片的方法和装置
    • WO1998000860A1
    • 1998-01-08
    • PCT/JP1997002232
    • 1997-06-27
    • SUMITOMO SITIX CORPORATIONADACHI, NaoshiHISATOMI, TakehiroSANO, Masakazu
    • SUMITOMO SITIX CORPORATION
    • H01L21/324
    • H01L21/67303H01L21/3225H01L21/324H01L21/67309Y10S206/832Y10S206/833Y10T117/1016
    • A method for heat-treating a single-crystal silicon wafer by which the number of single-crystal silicon wafers treated in a single heat-treating process is increased and, at the same time, dislocation and slip in a high-temperature heat-treating atmosphere are suppressed at the time of performing various kinds of heat treatment, such as a diffusion heat treatment for forming a DZ layer, a treatment for generating and controlling BMD for giving the IG ability, a heat treatment for improving the withstand voltage of an oxide film by eliminating COP defects on and in the wafers. The wafers are divided into groups of about 10 wafers, the wafers of each group are stacked, and a plurality of groups of wafers are placed horizontally or in a state that the wafers are inclined slightly by an angle of 0.5-5 DEG on a boat which supports the wafers at a plurality of points on the outer peripheries of the wafers. Therefore, as shown in embodiments, various kinds of heat treatment can be applied to the wafers and the wafers are heat-treated uniformly, because dislocation and slip of the wafers are prevented.
    • 在单一的热处理工序中处理的单晶硅晶片的数量增加的单晶硅晶片的热处理方法增加,同时在高温热处理中发生位错和滑动 在进行DZ层的扩散热处理,赋予IG能力的BMD的生成和控制处理等的各种热处理时抑制气氛,提高氧化物的耐电压的热处理 通过消除晶片上的和在晶片中的COP缺陷来形成膜。 将晶片分成约10个晶片的组,每个组的晶片被堆叠,并且多个晶片组水平放置或者在晶片在船上稍微倾斜0.5-5°的角度的状态 其在晶片的外周上的多个点处支撑晶片。 因此,如实施例所示,可以对晶片进行各种热处理,并且由于晶片的位错和滑动被阻止,因此均匀地对晶片进行热处理。