专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2013032691A2 ENGINEERED SUBSTRATES FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS 审中-公开
标题翻译：用于半导体器件的工程基底及相关系统和方法
公开(公告)号：WO2013032691A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/050787
申请日：2012-08-14
申请人： MICRON TECHNOLOGY, INC. , SCHUBERT, Martin, F. , BASCERI, Cem , ODNOBLYUDOV, Vladimir , KURTH, Casey , GEHRKE, Thomas
发明人： SCHUBERT, Martin, F. , BASCERI, Cem , ODNOBLYUDOV, Vladimir , KURTH, Casey , GEHRKE, Thomas
IPC分类号： H01L21/20 , H01L21/02 , H01L33/00
CPC分类号： H01L33/0079 , H01L33/0062 , H01L33/0066 , H01L33/007 , H01L33/0075 , H01L33/0095 , H01L33/02 , H01L33/16 , H01L33/46
摘要： Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.
摘要翻译：这里公开了用于半导体器件的工程衬底。根据特定实施例的器件包括具有包括发射辐射的有源区的多个半导体材料的换能器结构。该设备进一步包括具有第一材料和第二材料的工程衬底，第一材料和第二材料中的至少一个具有与至少一个所述多个热膨胀系数至少近似匹配的热膨胀系数的半导体材料。第一材料和第二材料中的至少一个被设置为接收来自有源区域的辐射并且修改光的特性。

2. 发明申请

WO2003050816A1 ROM EMBEDDED DRAM WITH BIAS SENSING 审中-公开
标题翻译： ROM嵌入式DRAM与偏置感测
公开(公告)号：WO2003050816A1
公开(公告)日：2003-06-19
申请号：PCT/US2002/039713
申请日：2002-12-12
申请人： MICRON TECHNOLOGY INC.
发明人： DERNER, Scott , KURTH, Casey , WALD, Phillip, G.
IPC分类号： G11C11/00
CPC分类号： G11C7/14 , G11C7/06 , G11C17/12 , G11C17/18 , G11C2207/104
摘要： A ROM embedded DRAM that provides ROM cells that can be programmed to a single state. Bias techniques are used to read un-programmed ROM cells accurately. Sense amplifier circuitry can be offset in one embodiment to default to the un-programmed state. In another embodiment, bias circuitry is coupled to bit lines to favor the un-programmed state. Further, a differential pre-charge operation can also be used in another embodiment. The ROM embedded DRAM allows for simplifier fabrication and programming of the ROM cells, while providing accurate dual state functionality.
摘要翻译：一个ROM嵌入式DRAM，提供可以编程为单一状态的ROM单元。偏置技术用于准确读取未编程的ROM单元。在一个实施例中，感测放大器电路可以被偏移到默认的未编程状态。在另一个实施例中，偏置电路耦合到位线以有利于未编程状态。此外，差分预充电操作也可以在另一实施例中使用。 ROM嵌入式DRAM允许ROM细胞的简化制造和编程，同时提供精确的双重状态功能。

3. 发明申请

WO2003050815A1 HALF DENSITY ROM EMBEDDED DRAM 审中-公开
标题翻译：高密度ROM嵌入式DRAM
公开(公告)号：WO2003050815A1
公开(公告)日：2003-06-19
申请号：PCT/US2002/039707
申请日：2002-12-12
申请人： MICRON TECHNOLOGY, INC.
发明人： DERNER, Scott , KURTH, Casey , WALD, Phillip, G.
IPC分类号： G11C11/00
CPC分类号： G11C11/404 , G11C17/12 , G11C2207/104
摘要： A half-density ROM embedded DRAM uses hard programmed non-volatile cells and unprogrammed dynamic cells. By hard programming either a first or second memory cell in a pair of cell, different data states are stored. Two word lines are used to access the memory cell pair. Because one of the cells is hard programmed, sense amplifier circuitry identifies the appropriate data state. The ROM cell can be programmed in numerous different manners. For example, ROM cells can be hard programmed by eliminating cell dielectric to short cell plates to a program voltage, or an electrical plug can be fabricated between the cell plates and shorted to a program voltage. In other embodiments, the ROM cell can be programmed using an anti-fuse programming technique, or by providing a high leakage path (not full short) such as through an active area to the substrate.
摘要翻译：半密度ROM嵌入式DRAM使用硬编程的非易失性单元和未编程的动态单元。通过对一对单元格中的第一或第二存储单元进行硬编程，存储不同的数据状态。两条字线用于访问存储单元对。因为其中一个单元是硬编程的，所以读出放大器电路识别适当的数据状态。 ROM单元可以以多种不同的方式进行编程。例如，ROM单元可以通过将单元电池的电介质消除到编程电压来进行硬编程，或者可以在单元板之间制造电插头并且短路到编程电压。在其他实施例中，ROM单元可以使用反熔丝编程技术进行编程，或者通过向衬底提供诸如通过有源区域的高泄漏路径（非完全短路）。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式