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1. 发明申请

WO2009037349A3 FORMULA FOR REMOVING COLOR COATS AND VARIOUS SOIL LAYERS FROM SURFACES, METHOD FOR PRODUCING THE AGENT, AND METHOD FOR CLEANING 审中-公开
标题翻译：用于去除发色层和表面的不同DIRT层方法制剂生产用于清理装置及方法
公开(公告)号：WO2009037349A3
公开(公告)日：2009-12-30
申请号：PCT/EP2008062573
申请日：2008-09-19
申请人： BUBBLES & BEYOND GMBH , SCHUMANN DIRK , SURKOW RAINER
发明人： SCHUMANN DIRK , SURKOW RAINER
IPC分类号： C11D17/00 , A61Q3/04 , A61Q5/02 , C09D9/00 , C09D9/04 , C11D3/18 , C11D3/20 , C11D3/50 , C11D11/00
CPC分类号： C11D17/0021 , A61K8/06 , A61K8/068 , A61K8/31 , A61K8/34 , A61K8/345 , A61K8/37 , A61K8/463 , A61K8/55 , A61K2800/21 , A61Q3/04 , C09D9/005 , C09D9/04 , C11D3/18 , C11D3/2006 , C11D3/2041 , C11D3/2068 , C11D3/2072 , C11D3/2093 , C11D3/2096 , C11D3/245 , C11D3/28 , C11D3/32 , C11D3/33 , C11D3/3427 , C11D3/3445 , C11D3/3472 , C11D3/349 , C11D3/362 , C11D3/43 , C11D3/50 , C11D11/0023 , C11D11/0052
摘要： The invention relates to a cleaning agent, characterized in that the cleaning agent comprises a microemulsion or a fluid nanophase system, and has the following components: a) at least one non-water-soluble substance having a solubility in water of less than 4 g per liter; b) at least one amphiphile substance, NP-MCA, that has no tenside structure, does not form structures on its own, has a solubility in water or oil between 4 g and 1000 g per liter, and preferably does not accumulate at the oil-water boundary, with the provision that NP-MCA is not selected from among 2-Ethyl-1,3-Hexanediol, 2-Methyl-2,4-Pentanediol, 2-(n- Butyl)-2-Ethyl-1,3-Propanediol and/or 1,2-Diols; c) at least one anionic, cationic, amphoteric and/or non-ionic tenside; d) water and/or a water-soluble solvent having hydroxyl functionality and, optionally, additives.
摘要翻译：本发明涉及一种清洁剂，其特征在于，所述清洁装置包括微乳液或流体纳米相体系和以下组分：a）具有在每升小于4g水中的溶解度的至少一种水不溶性物质; b）至少一种两亲性物质，NP-MCA，其具有单独没有表面活性剂的结构不是结构形成，是它们在4克和每升千克之间，优选在水或油中的溶解度在油 - 水界面不积累与NP-MCA不从2-乙基-1,3-己二醇，2-甲基-2,4-戊二醇，2-（正丁基）-2-乙基-1,3-丙二醇中选择的条件和/或从1,2-二醇; c）至少一种阴离子，阳离子，两性和/或非离子表面活性剂; d）水和/或具有羟基官能团和任选的赋形剂的水溶性溶剂。

2. 发明申请

WO2010108639A3 METHOD AND COMPOSITION FOR CLEANING OBJECTS 审中-公开
标题翻译：方法和组合物清洗对象
公开(公告)号：WO2010108639A3
公开(公告)日：2010-11-25
申请号：PCT/EP2010001774
申请日：2010-03-22
申请人： BUBBLES AND BEYOND GMBH , SCHUMANN DIRK , SURKOW RAINER
发明人： SCHUMANN DIRK , SURKOW RAINER
IPC分类号： C11D1/825 , C11D1/14 , C11D1/72 , C11D1/74 , C11D1/83 , C11D3/00 , C11D3/18 , C11D3/20 , C11D3/32 , C11D17/00
CPC分类号： C11D17/0021 , C11D1/825 , C11D1/83 , C11D3/0052 , C11D3/18 , C11D3/20 , C11D3/201 , C11D3/2041 , C11D3/2072 , C11D3/2093 , C11D3/32
摘要： The present invention relates to a method for cleaning objects made of organic or inorganic materials, wherein the relevant material is brought into contact with a composition in the form of a fluid nanophase system, comprising a) at least one water-insoluble substance having a water solubility of less than 4 grams per liter, b) at least one amphiphilic substance (NP-MCA) which has no surfactant structure, is not structure-forming on its own, the solubility of which in water or oil ranges between 4g and 1000g per liter and which does not preferably accumulate at the oil-water interface, c) at least one anionic, cationic, amphoteric and/or non-ionic surfactant, d) at least one polar protic solvent, in particular having hydroxy functionality, e) if necessary one or more auxiliary substance.
摘要翻译：本发明涉及一种用于清洁由有机或无机材料的制品，在此之后所讨论的材料被抵接在包括具有每升少于4克的水溶解度：a）至少一种水不溶性物质的流体纳米相体系的形式的组合物的方法 b）至少一种两亲性物质（NP-MCA）具有单独的表面活性剂没有结构不是结构形成，其是在每升4g和千克之间的水或油溶性和优选在油 - 水界面不积累 c）至少一种阴离子，阳离子，两性和/或非离子表面活性剂，d）至少一种极性质子溶剂，特别是与羟基，e）任选地一种或多种赋形剂。

3. 发明申请

WO03028104A3 SEMICONDUCTOR MEMORY WITH MEMORY CELLS COMPRISING A VERTICAL SELECTION TRANSISTOR AND METHOD FOR PRODUCTION THEREOF 审中-公开
标题翻译：包含垂直选择晶体管的具有存储器单元的半导体存储器及其制造方法
公开(公告)号：WO03028104A3
公开(公告)日：2003-08-14
申请号：PCT/DE0202980
申请日：2002-08-14
申请人： INFINEON TECHNOLOGIES AG , LUETZEN JOERN , GOEBEL BERND , SCHUMANN DIRK , GUTSCHE MARTIN , SEIDL HARALD , POPP MARTIN , KERSCH ALFRED , STEINHOEGL WERNER
发明人： LUETZEN JOERN , GOEBEL BERND , SCHUMANN DIRK , GUTSCHE MARTIN , SEIDL HARALD , POPP MARTIN , KERSCH ALFRED , STEINHOEGL WERNER
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L27/10864 , H01L27/10841 , H01L27/10867 , H01L27/10891
摘要： A trench capacitor (30) is arranged in a first trench (25) for production of a semiconductor memory (5). A first longitudinal trench (55) is arranged in the substrate (15) next to the first trench (25) and parallel thereto on the other side of the first trench (25), a second longitudinal trench (60) is arranged therein. A first spacer word line (70) is arranged in the first longitudinal trench (55) and a second spacer word line (75) is arranged in the second longitudinal trench (60). Connecting webs (80) are arranged in the first trench (25) between the first spacer word line (70) and the second spacer word line (75) with a thickness (110), which is smaller in the direction of the first spacer word line (70) than half the width of the first trench (25) in the direction of the first spacer word line (70).
摘要翻译：为了制造半导体存储器（5），沟槽电容器（30）被布置在第一沟槽（25）中。除了所述第一沟槽（25），第一纵向沟槽（55）和上第一沟槽并行（25），在所述基板的第二纵向沟槽（60）的另一侧（15）被布置。在第一纵向沟槽（55）中设置第一间隔字线（70），在第二纵向沟槽（60）中设置第二间隔字线（75）。在所述第一沟槽（25）的连接板（80）设置在所述第一间隔物的字线（70）和具有厚度（110）所述第二间隔的字线（75）（在第一间隔的字线70的方向之间）小于第一沟槽（25）朝向第一间隔字线（70）的宽度的一半。

4. 发明申请

WO2010105842A3 PREPARATION FOR EXTERNAL APPLICATION 审中-公开
标题翻译：准备外部应用
公开(公告)号：WO2010105842A3
公开(公告)日：2011-05-26
申请号：PCT/EP2010001742
申请日：2010-03-19
申请人： BUBBLES AND BEYOND GMBH , SCHUMANN DIRK
发明人： SCHUMANN DIRK
IPC分类号： A61K9/107 , A61K9/00 , A61K47/08 , A61K47/10
CPC分类号： A61K9/1075 , A61K9/0014 , A61K47/08 , A61K47/10
摘要： The present invention relates to preparations for external application to human and animal skin, comprising: a) a composition in the form of a fluid nanophase system, comprising the components of a1) at least one water-insoluble substance with a water solubility of less than 4 gram per liter, a2) at least one amphiphilic substance (NP-MCA), which has no surfactant structure, does not build structures alone, the solubility of which is between 4g and 1000g per liter in water or oil and which does not enrich preferably at the oil-water interface, a3) at least one anionic, cationic, amphoteric and/or non-ionic surfactant, a4) at least one polar protic solvent, in particular having hydroxy functionality, a5) if necessary one or more adjuvants, wherein the percentage relate to the total weight of the composition each; and b) a therapeutic, cosmetic or diagnostically effective agent in a therapeutic, cosmetic or diagnostically effective amount.
摘要翻译：本发明涉及制剂用于外部施用至动物和包括人类）中包含所述组分的流体纳米相体系的形式的组合物的皮肤A1）至少一种不溶于水的物质具有少于每升4克，A2）至少一种两亲的水溶解度具有单独没有表面活性剂结构物（NP-MCA）不是结构形成，在水中的溶解度或4 g且每升千克之间的油，优选在油 - 水界面不积累，a3）的至少阴离子，阳离子，两性和/或非离子表面活性剂，a4）中的至少一种极性质子溶剂，特别是具有羟基官能团，A5）任选的一种或多种赋形剂，其特征在于，在每种情况下，百分比基于组合物的总重量计，和b）治疗，化妆品或诊断有效的药剂治疗上，美容上或诊断上有效的量。

5. 发明申请

WO0118849A3 INTEGRATED CIRCUIT ARRANGEMENT WITH AT LEAST A CAPACITOR AND A METHOD FOR THE PRODUCTION OF THE SAID 审中-公开
标题翻译：具有至少一个电容器的集成电路装置及其制造方法
公开(公告)号：WO0118849A3
公开(公告)日：2001-06-14
申请号：PCT/DE0003123
申请日：2000-09-06
申请人： INFINEON TECHNOLOGIES AG , SCHUMANN DIRK , SELL BERNHARD , WILLER JOSEF
发明人： SCHUMANN DIRK , SELL BERNHARD , WILLER JOSEF
IPC分类号： H01L21/8242 , H01L21/02 , H01L27/108
CPC分类号： H01L28/91 , H01L27/10852
摘要： The capacitor is arranged on the surface of a substrate (1). A first capacitor electrode has a middle part (M) and a side part (ST),which point vertically upwards, are arranged beside each other and are connected with each other via an upper part (O) located above said middle part (M) and said side part (ST). The middle part (M) is longer than the side part (ST) and is connected with other components of the circuit arrangement located below said middle part (M) and said side part (ST). The first capacitor electrode is provided with a capacitor dielectric (KD). A second capacitor electrode (P) borders the capacitor dielectric (KD).
摘要翻译：电容器设置在衬底（1）的表面上。第一电容器电极具有基本竖直延伸的中央部分（M）和侧部分（ST），彼此相邻布置并且经由布置在上方的上部分（O）彼此连接。中间部分（M）比侧面部分（ST）长并连接到布置在电路装置下方的另一个部件。第一电容器电极配备有电容器电介质（KD）。第二电容器电极（P）邻接电容器电介质（KD）。

6. 发明申请

WO03028093A3 METHOD FOR THE GENERATION OF A SOI SUBSTRATE, VERTICAL TRANSISTOR AND MEMORY CELL WITH VERTICAL TRANSISTOR 审中-公开
标题翻译：方法形成SOI衬底，垂直晶体管和记忆细胞与垂直晶体管
公开(公告)号：WO03028093A3
公开(公告)日：2003-08-14
申请号：PCT/DE0203023
申请日：2002-08-19
申请人： INFINEON TECHNOLOGIES AG , BIRNER ALBERT , BREUER STEFFEN , GOLDBACH MATTHIAS , LUETZEN JOERN , SCHUMANN DIRK
发明人： BIRNER ALBERT , BREUER STEFFEN , GOLDBACH MATTHIAS , LUETZEN JOERN , SCHUMANN DIRK
IPC分类号： H01L21/8242 , H01L27/12 , H01L21/762
CPC分类号： H01L27/10864 , H01L27/10867 , H01L27/1203
摘要： The invention relates to a method for the generation of a Silicon-On-Insulator layer structure on a silicon surface with any shape, whereby the Silicon-On-Insulator structure can only be produced locally. The method comprises the formation of mesopores (10) in the silicon surface region (3), the oxidation of the mesopore surface to give silicon oxide and web regions (22) of single-crystal silicon, remaining between adjacent mesopores (10), whereby said step is terminated as soon as a given minimum silicon wall strength for the web regions (22) is achieved, the release of the web regions (22) between adjacent mesopores at the end away from the semiconductor substrate (2) is carried out and a selective epitaxial process by means of which silicon is selectively grown on the released web regions (22) relative to the silicon oxide regions (11). The method can be used for the production of a vertical transistor and a memory cell with such a selection transistor.
摘要翻译：本发明涉及一种用于在与该硅 - 绝缘体结构也可本地产生的任何几何形状的硅表面上制作绝缘层结构的硅的方法。该方法包括：在硅表面面积（3），中孔表面的氧化，以形成单晶硅，其保持（10）相邻的中孔之间的氧化硅和陆地区域（22）中孔（10）的形成，所述步骤将立即终止陆块区的一个预定的最小硅的壁厚（22）达到，相对的端部暴露于半导体衬底（2）的布置陆地区域相邻的孔（22）之间; 并通过硅到暴露的陆地区域（22）（11）执行选择性外延工艺，对氧化硅的选择性区域长大。该方法可被用于制造垂直晶体管和具有这样的选择晶体管的存储单元。

7. 发明申请

WO02078058A3 METHOD FOR THE PRODUCTION OF A MOSFET WITH VERY SMALL CHANNEL LENGTH 审中-公开
标题翻译：用于生产规模很小，MOSFET的沟道长度
公开(公告)号：WO02078058A3
公开(公告)日：2003-06-26
申请号：PCT/DE0200732
申请日：2002-02-28
申请人： INFINEON TECHNOLOGIES AG , CAPPELLANI ANNALISA , DITTMAR LUDWIG , SCHUMANN DIRK
发明人： CAPPELLANI ANNALISA , DITTMAR LUDWIG , SCHUMANN DIRK
IPC分类号： H01L21/3065 , H01L21/265 , H01L21/28 , H01L21/3213 , H01L21/336 , H01L29/78
CPC分类号： H01L21/28114 , H01L21/2652 , H01L21/28052 , H01L21/28061 , H01L21/28123 , H01L21/32137 , H01L29/66575
摘要： The invention relates to a method, whereby a gate layer stack consisting of at least two layers (3 and 5) is initially structured anisotropically and the bottom layer (3) is then etched, wherein an isotropic, preferably a selective etching step causes lateral underetching, i.e. removal of the bottom layer (3) to a predetermined channel length. A T-Gate transistor with very short channel length can be accurately, easily and economically produced with the aid of the inventive method. The electrical switching properties of said transistor are better than those of other T-gate transistors formed with conventional methods.
摘要翻译：本发明公开了一种方法，其中至少两个层（3）和（5）存在的栅极层堆叠第一各向异性图案化，然后将下层（3）进行蚀刻的各向同性，优选选择性蚀刻步骤，一个侧面蚀刻，D。小时。实现除去下层（3）的所述预定信道长度。利用本发明的方法的帮助下，一个T栅极晶体管非常短的沟道长度可以尺寸精确的，被制造和很容易地花费。其电气开关性质比其他的，通过常规的方法T-栅极晶体管形成更好。

8. 发明申请

WO2004030028A3 METHOD FOR THE PRODUCTION OF AN INTEGRATED SEMICONDUCTOR CIRCUIT 审中-公开
标题翻译：生产集成半导体电路的方法
公开(公告)号：WO2004030028A3
公开(公告)日：2004-06-03
申请号：PCT/DE0303068
申请日：2003-09-16
申请人： INFINEON TECHNOLOGIES AG , GOEBEL BERND , MOLL PETER , SCHUMANN DIRK , SEIDL HARALD
发明人： GOEBEL BERND , MOLL PETER , SCHUMANN DIRK , SEIDL HARALD
IPC分类号： H01L20060101 , H01L21/768 , H01L21/8239 , H01L21/8242 , H01L27/108
CPC分类号： H01L27/10888 , H01L21/76895 , H01L27/10864 , H01L27/10894
摘要： The invention relates to a method for the production of an integrated semiconductor circuit, whereby electrical contacts (20), for first conducting structures (1), are produced in the memory region (I) and the first conducting structures (1) are contacted, without contacting second conducting structures (2) arranged laterally with respect to the first conducting structures (1), which laterally border the first conducting structures (1) or are arranged too close to the same to be selectively lithographically masked. According to the invention, the first conducting structures (1) are contacted, whereby a conducting layer (L) is deposited and structured after a planarisation in the memory region at the level of the first conducting structures (1) above the second conducting structures (2), which is applied in the logic region for the generation of gate electrodes, for example. Intermediate contacts (10) are thus structured which are so wide that contact holes for the electrical contacts can be fitted thereon. The deposition of a nitride layer for the protection of the second conducting layer (2) is thus superfluous.
摘要翻译：本发明涉及一种用于制造在其中为第一导电结构（1）的存储器区域（I）（20）制备的半导体集成电路的电接触，并且所述第一导电结构（1）由所述第一结构没有横向导电接触（2）（1）设置在第二导电图案，以接触施加于第一导电图案的侧面（1）抵接或挨着它们紧密地布置成选择性地掩蔽以它们能够光刻。根据本发明，第一导电结构（1）由所述存储区域在已经在所述逻辑区域被使用过的第二导电结构（2）平坦化，导电层（L）后上面的第一导电结构（1）的电平相接触，例如用于生产栅电极的变得分离和结构化。这个中间触点（10）是结构化的，其宽度足以使电触点（20）的触点孔可以调节到它们。不需要沉积氮化物层以保护第二导电结构（2）。

9. 发明申请

WO02069345A2 METHOD FOR PRODUCTION OF A MEMORY CAPACITOR 审中-公开
标题翻译：用于生产存储器用电容器
公开(公告)号：WO02069345A2
公开(公告)日：2002-09-06
申请号：PCT/DE0200436
申请日：2002-02-06
申请人： INFINEON TECHNOLOGIES AG , SELL BERNHARD , SAENGER ANNETTE , SCHUMANN DIRK
发明人： SELL BERNHARD , SAENGER ANNETTE , SCHUMANN DIRK
IPC分类号： H01L21/02 , H01L21/285 , H01L21/316 , H01L21/8242 , H01L27/108 , G11C15/00
CPC分类号： H01L27/10861 , H01L21/28518 , H01L21/31604 , H01L27/10814 , H01L28/60
摘要： The invention relates to a novel method for production of a memory capacitor, embodied as a trench or laminar condenser and is used, in particular, in a DRAM memory cell. Said method comprises the following steps: a lower metallic condenser electrode (13), a storage dielectric (14) and an upper condenser electrode (15) are formed, whereby the lower metallic condenser electrode (13) is formed in a self-justified manner on a silicon base material (1), then a free silicon region is formed in those positions where the lower condenser electrode is to be formed and then metal silicide (13) is formed selectively on the free silicon.
摘要翻译：本发明涉及一种用于存储电容器，其被设计为沟槽或叠层电容器，特别是用于在DRAM的存储单元的制备的新方法。本发明方法包括在上一个硅基底材料的自对准的方式形成下金属电容器电极（13），存储介质（14）和上电容器电极（15），所述下部金属电容器电极（13）的步骤（1）形成是，首先在在该下电容器电极是该位置的所有暴露的硅区中形成，产生，然后施加到金属硅化物（13）的暴露的硅区域上选择性地形成。

10. 发明申请

WO2010105842A2 PREPARATION FOR EXTERNAL APPLICATION 审中-公开
标题翻译：制备用于外部使用
公开(公告)号：WO2010105842A2
公开(公告)日：2010-09-23
申请号：PCT/EP2010001742
申请日：2010-03-19
申请人： BUBBLES AND BEYOND GMBH , SCHUMANN DIRK
发明人： SCHUMANN DIRK
IPC分类号： A61K9/107 , A61K9/00 , A61K47/08 , A61K47/10
CPC分类号： A61K9/1075 , A61K9/0014 , A61K47/08 , A61K47/10
摘要： The present invention relates to preparations for external application to human and animal skin, comprising: a) a composition in the form of a fluid nanophase system, comprising the components of a1) at least one water-insoluble substance with a water solubility of less than 4 gram per liter, a2) at least one amphiphilic substance (NP-MCA), which has no surfactant structure, does not build structures alone, the solubility of which is between 4g and 1000g per liter in water or oil and which does not enrich preferably at the oil-water interface, a3) at least one anionic, cationic, amphoteric and/or non-ionic surfactant, a4) at least one polar protic solvent, in particular having hydroxy functionality, a5) if necessary one or more adjuvants, wherein the percentage relate to the total weight of the composition each; and b) a therapeutic, cosmetic or diagnostically effective agent in a therapeutic, cosmetic or diagnostically effective amount.
摘要翻译：本发明涉及制剂用于外部施用至动物和包括人类）中包含所述组分的流体纳米相体系的形式的组合物的皮肤A1）至少一种不溶于水的物质具有少于每升4克，A2）至少一种两亲的水溶解度物质（NP-MCA）不具有表面活性剂结构单独，是不是结构形成，其是在每升4g和千克之间的水或油溶性和优选在油 - 水界面不积累，A3）至少一种阴离子，阳离子，两性和/或非离子表面活性剂，a4）中的至少一种极性质子溶剂，特别是具有羟基官能团，A5）任选的一种或多种赋形剂，其中，每个所述百分比是指该组合物的总重量计，和b）治疗，化妆品或在疗法诊断活性剂 apeutisch，化妆品或诊断有效量。

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