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    • 6. 发明申请
    • GALLIUM NITRIDE VERTICAL JFET WITH HEXAGONAL CELL STRUCTURE
    • 具有六角形细胞结构的硝酸锌垂直JFET
    • WO2014107304A1
    • 2014-07-10
    • PCT/US2013/076007
    • 2013-12-18
    • AVOGY, INC.
    • EDWARDS, Andrew P.NIE, HuiDISNEY, Donald R.KIZILYALLI, Isik
    • H01L29/15
    • H01L27/098H01L29/0692H01L29/2003H01L29/42312H01L29/66909H01L29/8083
    • An array of GaN-based vertical JFETs includes a GaN substrate comprising a drain of one or more of the JFETs and one or more epitaxial layers coupled to the GaN substrate. The array also includes a plurality of hexagonal cells coupled to the one or more epitaxial layers and extending in a direction normal to the GaN substrate. Sidewalls of the plurality of hexagonal cells are substantially aligned with respect to crystal planes of the GaN substrate. The array further includes a plurality of channel regions, each having a portion adjacent a sidewall of the plurality of hexagonal cells, a plurality of gate regions of one or more of the JFETs, each electrically coupled to one or more of the plurality of channel regions, and a plurality of source regions of one or more of the JFETs electrically coupled to one or more of the plurality of channel regions.
    • GaN基垂直JFET的阵列包括包含一个或多个JFET的漏极和耦合到GaN衬底的一个或多个外延层的GaN衬底。 该阵列还包括耦合到一个或多个外延层并沿垂直于GaN衬底的方向延伸的多个六边形单元。 多个六边形单元的侧壁相对于GaN衬底的晶面基本上对齐。 阵列还包括多个通道区域,每个沟道区域具有邻近多个六边形单元的侧壁的部分,一个或多个JFET的多个栅极区域,每个栅极区域电耦合到多个沟道区域中的一个或多个 以及电耦合到多个沟道区中的一个或多个的一个或多个JFET的多个源极区。