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    • 3. 发明申请
    • DEPOSITION PLATFORM FOR FLEXIBLE SUBSTRATES AND METHOD OF OPERATION THEREOF
    • 用于柔性基板的沉积平台及其操作方法
    • WO2014154692A1
    • 2014-10-02
    • PCT/EP2014/055967
    • 2014-03-25
    • APPLIED MATERIALS, INC.DIEGUEZ-CAMPO, Jose ManuelLANDGRAF, HeikeSTOLLEY, TobiasHEIN, StefanRIES, FlorianMORRISON, Neil
    • DIEGUEZ-CAMPO, Jose ManuelLANDGRAF, HeikeSTOLLEY, TobiasHEIN, StefanRIES, FlorianMORRISON, Neil
    • C23C16/54C23C14/56C23C16/509C23C16/455
    • C23C16/545C23C14/562C23C16/44C23C16/4409C23C16/45519C23C16/509
    • An apparatus for processing a flexible substrate is described. The apparatus includes a vacuum chamber having a first chamber portion, a second chamber portion and a third chamber portion, an unwinding shaft for supporting the flexible substrate to be processed and a winding shaft supporting the flexible substrate having the thin film deposited thereon, wherein the unwinding shaft and the winding shaft are arranged in the first chamber portion, at least one gap sluice for separating the first chamber portion from the second chamber portion, wherein the gap sluice is configured such that the flexible substrate can move there through and the gap sluice can be opened and closed for providing a vacuum seal, a coating drum having a rotation axis and a curved outer surface for guiding the substrate along the curved outer surface through a first vacuum processing region and at least one second vacuum processing region, wherein a first portion of the coating drum is provided in the second chamber portion and the remaining portion of the coating drum is provided in the third chamber portion, a first processing station corresponding to the first processing region and at least one second processing station corresponding to the at least one second vacuum processing region, wherein the first processing station and the second processing station each includes a flange portion for providing a vacuum connection. Further, the third chamber portion has a convex shaped chamber wall portion, wherein the third chamber portion has at least two openings provided therein, particularly wherein the at least two openings are essentially parallel to the convex shaped chamber wall portion; and wherein the first processing station and the at least one second processing station are configured to be received in the at least two openings, wherein the flange portions of the first processing station and the second processing station provide a vacuum tight connection with the third chamber.
    • 描述了一种用于处理柔性基板的装置。 该装置包括具有第一室部分,第二室部分和第三室部分的真空室,用于支撑要处理的柔性基板的退绕轴和支撑其上沉积有薄膜的柔性基板的卷绕轴,其中, 退绕轴和卷绕轴布置在第一室部分中,至少一个间隙闸道用于将第一室部分与第二室部分分离,其中间隙闸门构造成使得柔性基板可以在那里移动并且间隙闸门 可以打开和关闭以提供真空密封,具有旋转轴线和弯曲外表面的涂布滚筒,用于通过第一真空处理区域和至少一个第二真空处理区域沿着弯曲的外表面引导基板,其中第一 涂布滚筒的一部分设置在第二室部分中,涂布滚筒的其余部分是pr 在第三室部分中排出第一处理站,对应于第一处理区域的第一处理站和对应于至少一个第二真空处理区域的至少一个第二处理站,其中第一处理站和第二处理站各自包括凸缘部分 用于提供真空连接。 此外,第三室部分具有凸形室壁部分,其中第三室部分具有设置在其中的至少两个开口,特别是其中至少两个开口基本上平行于凸形室壁部分; 并且其中所述第一处理站和所述至少一个第二处理站被配置为被接收在所述至少两个开口中,其中所述第一处理站和所述第二处理站的所述凸缘部分与所述第三室提供真空密封连接。
    • 4. 发明申请
    • COMMON DEPOSITION PLATFORM, PROCESSING STATION AND METHOD OF OPERATION THEREOF
    • 通用沉积平台,加工站及其操作方法
    • WO2014118062A1
    • 2014-08-07
    • PCT/EP2014/051259
    • 2014-01-22
    • APPLIED MATERIALS, INC.MORRISON, NeilDIEGUEZ-CAMPO, Jose ManuelLANDGRAF, HeikeSTOLLEY, TobiasHEIN, StefanRIES, FlorianBUSCHBECK, Wolfgang
    • MORRISON, NeilDIEGUEZ-CAMPO, Jose ManuelLANDGRAF, HeikeSTOLLEY, TobiasHEIN, StefanRIES, FlorianBUSCHBECK, Wolfgang
    • C23C16/455C23C16/54H01J37/32H05H1/24
    • C23C16/545C23C16/45517C23C16/45519C23C16/50H01J37/32449H01J37/32513H01J37/32568H01J37/32752H01J37/32761H01J37/3277
    • An apparatus for depositing a thin film on a substrate is described. The apparatus includes a substrate support having an outer surface for guiding the substrate along a surface of the substrate support through a first vacuum processing region and at least one second vacuum processing region, a first deposition sources corresponding to the first processing region and at least one second deposition source corresponding to the at least one second vacuum processing region, wherein at least the first deposition source includes: an electrode having a surface, wherein the surface of the electrode opposes the surface of the substrate support, a processing gas inlet and a processing gas outlet, wherein the processing gas inlet and the processing gas outlet are arranged at opposing sides of the surface of the electrode, and at least one separation gas inlet having one or more separation gas inlet openings, wherein the one or more separation gas inlet openings are at least provided at one of opposing sides of the surface of the electrode such that the processing gas inlet and/or the processing gas outlet are provided between the one or more separation gas inlet openings and the surface of the electrode. The apparatus further includes one or more vacuum flanges providing at least a further gas outlet between the first deposition source and the at least one second deposition source.
    • 描述了一种在衬底上沉积薄膜的装置。 该装置包括一个基板支架,该基板支撑件具有外表面,用于通过第一真空处理区域和至少一个第二真空处理区域沿基板支撑件的表面引导基板,对应于第一处理区域的第一沉积源和至少一个 第二沉积源对应于所述至少一个第二真空处理区域,其中至少所述第一沉积源包括:具有表面的电极,其中所述电极的表面与所述基板支撑件的表面相对,处理气体入口和处理 气体出口,其中处理气体入口和处理气体出口布置在电极表面的相对侧,以及至少一个具有一个或多个分离气体入口的分离气体入口,其中一个或多个分离气体入口 至少设置在电极的表面的相对侧中的一个处,使得处理 气体入口和/或处理气体出口设置在一个或多个分离气体入口与电极表面之间。 该装置还包括一个或多个真空凸缘,其在第一沉积源和至少一个第二沉积源之间提供至少另外的气体出口。