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1. 发明申请

WO2012019044A3 TECHNIQUES FOR MATCHING MEASURED SPECTRA TO REFERENCE SPECTRA FOR IN-SITU OPTICAL MONITORING 审中-公开
标题翻译：将测量光谱匹配到用于现场光学监测的参考光谱的技术
公开(公告)号：WO2012019044A3
公开(公告)日：2012-05-18
申请号：PCT/US2011046646
申请日：2011-08-04
申请人： APPLIED MATERIALS INC , HU XIAOYUAN , WANG ZHIHONG , LEE HARRY Q , ZHU ZHIZE , DAVID JEFFREY DRUE , BENVEGNU DOMINIC J , ZHANG JIMIN , TU WEN-CHIANG
发明人： HU XIAOYUAN , WANG ZHIHONG , LEE HARRY Q , ZHU ZHIZE , DAVID JEFFREY DRUE , BENVEGNU DOMINIC J , ZHANG JIMIN , TU WEN-CHIANG
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B37/013 , B24B37/042 , B24B37/107 , B24B37/205 , B24B49/045 , B24B49/12
摘要： A method of controlling polishing includes storing a library having a plurality of reference spectra, polishing a substrate, measuring a sequence of spectra of light from the substrate during polishing, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum using a matching technique other than sum of squared differences to generate a sequence of best matching reference spectra, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of best matching reference spectra. Finding a best matching reference spectrum may include performing a cross-correlation of the measured spectrum with each of two or more of the plurality of reference spectra from the library and selecting a reference spectrum with the greatest correlation to the measured spectrum as a best matching reference spectrum.
摘要翻译：控制抛光的方法包括：存储具有多个参考光谱的库，抛光衬底，在抛光期间测量来自衬底的光的光谱序列，对于光谱序列的每个测量光谱，使用除了平方差的和以产生最佳匹配参考光谱的序列之外的匹配技术，以及基于最佳匹配参考光谱的序列来确定抛光终点或抛光速率的调整中的至少一个。找到最佳匹配的参考光谱可以包括执行所测量的光谱与来自文库的多个参考光谱中的两个或更多个的互相关，并选择与所测量的光谱具有最大相关性的参考光谱作为最佳匹配参考光谱。

2. 发明申请

WO2005038085A3 SELECTIVE SELF-INITIATING ELECTROLESS CAPPING OF COPPER WITH COBALT-CONTAINING ALLOYS 审中-公开
标题翻译：含钴合金的选择性自发铜化学镀铜
公开(公告)号：WO2005038085A3
公开(公告)日：2005-07-07
申请号：PCT/US2004034449
申请日：2004-10-18
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY , ZHU ZHIZE
发明人： WEIDMAN TIMOTHY , ZHU ZHIZE
IPC分类号： B05D1/18 , C23C18/16 , C23C18/18 , C23C18/31 , C23C18/34 , C23C18/36 , C23C18/40 , C23C18/44 , C23C18/48 , C23C18/50 , C23C18/52 , H01L21/288 , H01L21/768
CPC分类号： C23C18/1619 , C23C18/168 , C23C18/1841 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76874
摘要： Embodiments of the invention generally provide compositions of plating solutions, methods to mix plating solutions and methods to deposit capping layers with plating solutions. The plating solutions described herein may be used as electroless deposition solutions to deposit capping layers on conductive features. The plating solutions are rather dilute and contain strong reductants to self-initiate on the conductive features. The plating solutions may provide in-situ cleaning processes for the conductive layer while depositing capping layers free of particles. In one embodiment, a method for forming an electroless deposition solution is provided which includes combining de-ionized water with a conditioning buffer solution comprising a first complexing agent, a cobalt-containing solution comprising a cobalt source and a second complexing agent and a buffered reducing solution comprising a hypophosphite source and a borane reductant.
摘要翻译：本发明的实施方案通常提供电镀溶液的组合物，混合电镀溶液的方法以及用电镀溶液沉积覆盖层的方法。本文描述的电镀溶液可以用作无电沉积溶液以将覆盖层沉积在导电部件上。电镀溶液相当稀薄，并含有强力还原剂以自行启动导电部件。电镀溶液可以提供用于导电层的原位清洁工艺，同时沉积不含颗粒的覆盖层。在一个实施方案中，提供了一种用于形成无电沉积溶液的方法，其包括将去离子水与包含第一络合剂，包含钴源和第二络合剂的含钴溶液和缓冲还原包含次磷酸盐源和硼烷还原剂的溶液。

3. 发明申请

WO2010062910A3 USING OPTICAL METROLOGY FOR FEED BACK AND FEED FORWARD PROCESS CONTROL 审中-公开
标题翻译：使用光学计量学反馈和前馈过程控制
公开(公告)号：WO2010062910A3
公开(公告)日：2010-08-12
申请号：PCT/US2009065772
申请日：2009-11-24
申请人： APPLIED MATERIALS INC , DAVID JEFFREY DRUE , LEE HARRY Q , SWEDEK BOGUSLAW A , BENVEGNU DOMINIC J , ZHU ZHIZE , TU WEN-CHIANG
发明人： DAVID JEFFREY DRUE , LEE HARRY Q , SWEDEK BOGUSLAW A , BENVEGNU DOMINIC J , ZHU ZHIZE , TU WEN-CHIANG
IPC分类号： H01L21/304
CPC分类号： B24B37/013 , B24B49/12 , H01L22/12 , H01L22/20 , H01L2924/0002 , H01L2924/00
摘要： A method includes polishing a substrate on a first platen using a first set of parameters, obtaining a plurality of measured spectra from at least two zones, comparing the plurality of measured spectra with a reference spectrum to evaluate the thickness of each of the at least two zones of the substrate, comparing a thickness of a first zone with a thickness of a second zone, determining whether the thickness of the first zone falls within a predetermined range of the thickness of the second zone, and if the thickness does not fall within the predetermined range, at least one of a) adjusting at least one parameter of the first set and polishing a second substrate on the first platen using the adjusted parameters, or b) adjusting at least one parameter of a second set and polishing the substrate on a second platen using the adjusted parameters.
摘要翻译：一种方法包括使用第一组参数对第一台板上的基板进行抛光，从至少两个区域获得多个测量的光谱，将多个测量的光谱与参考光谱进行比较以评估至少两个中的每一个的厚度比较第一区域的厚度与第二区域的厚度，确定第一区域的厚度是否落入第二区域的厚度的预定范围内，并且如果厚度不落入第二区域的厚度预定范围中的至少一个，a）调整第一组的至少一个参数并且使用调整后的参数抛光第一台板上的第二衬底，或者b）调整第二组的至少一个参数并抛光第二压板使用调整后的参数。

4. 发明申请

WO2006102318A2 ELECTROLESS DEPOSITION PROCESS ON A CONTACT CONTAINING SILICON OR SILICIDE 审中-公开
标题翻译：在含硅或硅的接触处的电沉积工艺
公开(公告)号：WO2006102318A2
公开(公告)日：2006-09-28
申请号：PCT/US2006/010220
申请日：2006-03-20
申请人： APPLIED MATERIALS, INC. , STEWART, Michael P. , WEIDMAN, Timothy W. , SHANMUGASUNDRAM, Arulkumar , ZHU, Zhize , GANDIKOTA, Srinivas , GELATOS, Avgerinos V. (Jerry) , ROSATO, John J. , EAGLESHAM, David J.
发明人： STEWART, Michael P. , WEIDMAN, Timothy W. , SHANMUGASUNDRAM, Arulkumar , ZHU, Zhize , GANDIKOTA, Srinivas , GELATOS, Avgerinos V. (Jerry) , ROSATO, John J. , EAGLESHAM, David J.
IPC分类号： B28B19/00 , C23C18/34
CPC分类号： C23C18/1893 , B82Y30/00 , C23C18/1651 , C23C18/32 , C23C18/34 , H01L21/02063 , H01L21/28518 , H01L21/288 , H01L21/76802 , H01L21/76814 , H01L21/76843 , H01L21/76847 , H01L21/76855 , H01L21/76856 , H01L21/76867 , H01L21/76874 , H01L21/76879 , H01L21/76889
摘要： Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.
摘要翻译：本文所述的实施方案提供了在无电沉积工艺期间在基材上沉积材料的方法，以及无电沉积溶液的组成。在一个实施例中，衬底包含具有暴露的硅接触表面的接触孔。在另一个实施例中，衬底包含具有暴露的硅化物接触表面的接触孔。通过将基板暴露于无电镀沉积工艺，孔通过金属接触材料填充。金属接触材料可以包含钴材料，镍材料或其合金。在填充孔之前，基底可以暴露于各种预处理过程，例如预清洗过程和激活过程。在湿式清洁过程或等离子体蚀刻过程中，预清洗方法可以去除有机残留物，天然氧化物和其它污染物。该方法的实施方案还提供附加层的沉积，例如覆盖层。

5. 发明申请

WO2005038084A2 SELECTIVE SELF-INITIATING ELECTROLESS CAPPING OF COPPER WITH COBALT-CONTAINING ALLOYS 审中-公开
标题翻译：含有钴合金的铜选择性自发电解封盖
公开(公告)号：WO2005038084A2
公开(公告)日：2005-04-28
申请号：PCT/US2004/034044
申请日：2004-10-15
申请人： APPLIED MATERIALS, INC. , WEIDMAN, Timothy , ZHU, Zhize
发明人： WEIDMAN, Timothy , ZHU, Zhize
IPC分类号： C23C18/31
CPC分类号： C23C18/1619 , C23C18/168 , C23C18/1841 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76874
摘要： Embodiments of the invention generally provide compositions of plating solutions, methods to mix plating solutions and methods to deposit capping layers with plating solutions. The plating solutions described herein may be used as electroless deposition solutions to deposit capping layers on conductive features. The plating solutions are rather dilute and contain strong reductants to self-initiate on the conductive features. The plating solutions may provide in-situ cleaning processes for the conductive layer while depositing capping layers free of particles. In one embodiment, a method for forming an electroless deposition solution is provided which includes forming a conditioning buffer solution comprising a first complexing agent, forming a cobalt-containing solution comprising a cobalt source and a second complexing agent, forming a buffered reducing solution comprising a hypophosphite source and a borane reductant, and combining the conditioning buffer, cobalt-containing, buffered reducing solutions and water to form the electroless deposition solution.
摘要翻译：本发明的实施方案通常提供电镀溶液的组合物，混合电镀溶液的方法和用电镀溶液沉积覆盖层的方法。本文所述的电镀溶液可用作无电镀沉积溶液以在导电特征上沉积覆盖层。电镀溶液相当稀释并含有强的还原剂，以在导电特征上自引发。电镀溶液可以提供导电层的原位清洁工艺，同时沉积没有颗粒的覆盖层。在一个实施方案中，提供了一种形成无电沉积溶液的方法，其包括形成包含第一络合剂的调理缓冲溶液，形成包含钴源和第二络合剂的含钴溶液，形成缓冲的还原溶液，其包含次磷酸盐源和硼烷还原剂，并将调理缓冲液，含钴缓冲还原溶液和水混合以形成无电沉积溶液。

6. 发明申请

WO2012019044A2 TECHNIQUES FOR MATCHING MEASURED SPECTRA TO REFERENCE SPECTRA FOR IN-SITU OPTICAL MONITORING 审中-公开
标题翻译：将测量的光谱与现场光学监测参考光谱进行匹配的技术
公开(公告)号：WO2012019044A2
公开(公告)日：2012-02-09
申请号：PCT/US2011/046646
申请日：2011-08-04
申请人： APPLIED MATERIALS, INC. , HU, Xiaoyuan , WANG, Zhihong , LEE, Harry Q. , ZHU, Zhize , DAVID, Jeffrey Drue , BENVEGNU, Dominic J. , ZHANG, Jimin , TU, Wen-Chiang
发明人： HU, Xiaoyuan , WANG, Zhihong , LEE, Harry Q. , ZHU, Zhize , DAVID, Jeffrey Drue , BENVEGNU, Dominic J. , ZHANG, Jimin , TU, Wen-Chiang
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B37/013 , B24B37/042 , B24B37/107 , B24B37/205 , B24B49/045 , B24B49/12
摘要： A method of controlling polishing includes storing a library having a plurality of reference spectra, polishing a substrate, measuring a sequence of spectra of light from the substrate during polishing, for each measured spectrum of the sequence of spectra, finding a best matching reference spectrum using a matching technique other than sum of squared differences to generate a sequence of best matching reference spectra, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on the sequence of best matching reference spectra. Finding a best matching reference spectrum may include performing a cross-correlation of the measured spectrum with each of two or more of the plurality of reference spectra from the library and selecting a reference spectrum with the greatest correlation to the measured spectrum as a best matching reference spectrum.
摘要翻译：控制抛光的方法包括存储具有多个参考光谱的库，抛光衬底，在抛光期间测量来自衬底的光的光谱序列，对于光谱序列的每个测量光谱，使用不同于平方差平方和的匹配技术来找到最佳匹配参考谱以产生最佳匹配参考谱的序列，以及基于最佳匹配序列来确定抛光终点或抛光速率的调整中的至少一个参考光谱。寻找最佳匹配参考光谱可以包括执行测量光谱与来自库的多个参考光谱中的两个或更多个中的每一个的互相关，并选择与测量光谱具有最大相关性的参考光谱作为最佳匹配参考谱。

7. 发明申请

WO2009134865A2 ENDPOINT DETECTION IN CHEMICAL MECHANICAL POLISHING USING MULTIPLE SPECTRA 审中-公开
标题翻译：使用多个光谱的化学机械抛光中的端点检测
公开(公告)号：WO2009134865A2
公开(公告)日：2009-11-05
申请号：PCT/US2009042085
申请日：2009-04-29
申请人： APPLIED MATERIALS INC , QIAN JUN , DHANDAPANI SIVAKUMAR , LEE HARRY Q , OSTERHELD THOMAS H , ZHU ZHIZE
发明人： QIAN JUN , DHANDAPANI SIVAKUMAR , LEE HARRY Q , OSTERHELD THOMAS H , ZHU ZHIZE
IPC分类号： H01L21/304
CPC分类号： B24B37/013 , B24B49/12
摘要： A computer implemented method includes obtaining at least one current spectrum with an in-situ optical monitoring system, comparing the current spectrum to a plurality of different reference spectra, and determining based on the comparing whether a polishing endpoint has been achieved for the substrate having the outermost layer undergoing polishing. The current spectrum is a spectrum of light reflected from a substrate having an outermost layer undergoing polishing and at least one underlying layer. The plurality of reference spectra represent spectra of light reflected from substrates with outermost layers having the same thickness and underlying layers having different thicknesses.
摘要翻译：计算机实现的方法包括：利用原位光学监测系统获得至少一个当前频谱，将当前频谱与多个不同的参考光谱进行比较，并且基于比较是否已经实现了具有最外层进行抛光。当前的光谱是从具有正在研磨的最外层的基底和至少一个下层反射的光的光谱。多个参考光谱表示从具有相同厚度的最外层和具有不同厚度的下层的基底反射的光的光谱。

8. 发明申请

WO2006102318A3 ELECTROLESS DEPOSITION PROCESS ON A CONTACT CONTAINING SILICON OR SILICIDE 审中-公开
标题翻译：在含硅或硅的接触处的电沉积工艺
公开(公告)号：WO2006102318A3
公开(公告)日：2009-04-09
申请号：PCT/US2006010220
申请日：2006-03-20
申请人： APPLIED MATERIALS INC , STEWART MICHAEL P , WEIDMAN TIMOTHY W , SHANMUGASUNDRAM ARULKUMAR , ZHU ZHIZE , GANDIKOTA SRINIVAS , GELATOS AVGERINOS V JERRY , ROSATO JOHN J , EAGLESHAM DAVID J
发明人： STEWART MICHAEL P , WEIDMAN TIMOTHY W , SHANMUGASUNDRAM ARULKUMAR , ZHU ZHIZE , GANDIKOTA SRINIVAS , GELATOS AVGERINOS V JERRY , ROSATO JOHN J , EAGLESHAM DAVID J
IPC分类号： C23C18/34 , C23C18/36
CPC分类号： C23C18/1893 , B82Y30/00 , C23C18/1651 , C23C18/32 , C23C18/34 , H01L21/02063 , H01L21/28518 , H01L21/288 , H01L21/76802 , H01L21/76814 , H01L21/76843 , H01L21/76847 , H01L21/76855 , H01L21/76856 , H01L21/76867 , H01L21/76874 , H01L21/76879 , H01L21/76889
摘要： Embodiments as described herein provide methods for depositing a material on a substrate (300) during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate (300)contains a contact aperture (310) having an exposed silicon contact surface (314). In another embodiment, the substrate (300) contains a contact aperture (310)having an exposed suicide contact surface (315). The apertures (310) are filled with a metal contact material (320) by exposing the substrate (300) to an electroless deposition process. The metal contact material (320) may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures (310), the substrate may be exposed to a variety of pretreatment processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer (318).
摘要翻译：本文所述的实施方案提供了在无电沉积工艺期间将材料沉积在基底（300）上的方法以及无电沉积溶液的组成。在一个实施例中，衬底（300）包含具有暴露的硅接触表面（314）的接触孔（310）。在另一个实施例中，衬底（300）包含具有暴露的硅化物接触表面（315）的接触孔（310）。通过将基板（300）暴露于无电沉积工艺，孔（310）填充有金属接触材料（320）。金属接触材料（320）可以含有钴材料，镍材料或其合金。在填充孔（310）之前，可以将基底暴露于各种预处理过程和激活过程。预清洗方法可以在湿式清洁工艺或等离子体蚀刻工艺期间去除有机残余物，天然氧化物和其它污染物。该方法的实施方案还提供附加层的沉积，例如覆盖层（318）。

9. 发明申请

WO2006102180A3 CONTACT METALLIZATION METHODS AND PROCESSES 审中-公开
标题翻译：接触金属化方法和工艺
公开(公告)号：WO2006102180A3
公开(公告)日：2007-10-04
申请号：PCT/US2006009918
申请日：2006-03-20
申请人： APPLIED MATERIALS INC , WEIDMAN TIMOTHY W , WIJEKOON KAPILA P , ZHU ZHIZE , GELATOS AVGERINOS V JERRY , KHANDELWAL AMIT , SHANMUGASUNDRAM ARULKUMAR , YANG MICHAEL X , WANG YAXIN , MEI FANG , MOGHADAM FARHAD K , STEWART MICHAEL P , KRISHNA NETY M , KONECNI ANTHONY , GANDIKOTA SRINIVAS
发明人： WEIDMAN TIMOTHY W , WIJEKOON KAPILA P , ZHU ZHIZE , GELATOS AVGERINOS V JERRY , KHANDELWAL AMIT , SHANMUGASUNDRAM ARULKUMAR , YANG MICHAEL X , WANG YAXIN , MEI FANG , MOGHADAM FARHAD K , STEWART MICHAEL P , KRISHNA NETY M , KONECNI ANTHONY , GANDIKOTA SRINIVAS
IPC分类号： H01L21/4763
CPC分类号： C23C18/1678 , B82Y30/00 , C23C16/0227 , C23C16/0281 , C23C16/045 , C23C16/14 , C23C18/1608 , C23C18/1651 , C23C18/1653 , C23C18/31 , C23C18/32 , C23C18/34 , C23C18/38 , C23C18/40 , C23C18/48 , C25D5/34 , H01L21/02063 , H01L21/02074 , H01L21/28518 , H01L21/28556 , H01L21/288 , H01L21/2885 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76847 , H01L21/76849 , H01L21/76855 , H01L21/76856 , H01L21/76861 , H01L21/76862 , H01L21/76874 , H01L21/76877 , H01L21/76879 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact and then filing the contact using an PVD, CVD, ALD, electrochemical plating and/or electroless deposition processes. In one embodiment, the barrier layer contains catalytically active surface that allows the electroless deposition of a metal on the surface. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one embodiment, a method for depositing a material on a substrate includes positioning a substrate within a process chamber, exposing the substrate to at least one pretreatment step and filling the contact by an electroless deposition process. Embodiments of the invention provide a simplified method of filling contact level features formed in a semiconductor device, which include novel methods of forming a contact level feature that contains a silicide interface and a tungsten CVD deposited layer.
摘要翻译：本发明的实施例通常提供通过在接触件上沉积阻挡层然后使用PVD，CVD，ALD，电化学电镀和/或无电沉积工艺来填充接触来填充在半导体器件中形成的接触电平特征的方法。在一个实施方案中，阻挡层含有催化活性表面，其允许在表面上无电沉积金属。一方面，无电沉积金属是铜或铜合金。在一个实施例中，用于在衬底上沉积材料的方法包括将衬底定位在处理室内，将衬底暴露于至少一个预处理步骤，并通过无电镀沉积工艺填充接触。本发明的实施例提供了填充形成在半导体器件中的接触电平特征的简化方法，其包括形成包含硅化物界面和钨CVD沉积层的接触电平特征的新颖方法。

10. 发明申请

WO2005038085A2 SELECTIVE SELF-INITIATING ELECTROLESS CAPPING OF COPPER WITH COBALT-CONTAINING ALLOYS 审中-公开
标题翻译：含有钴合金的铜选择性自发电解封盖
公开(公告)号：WO2005038085A2
公开(公告)日：2005-04-28
申请号：PCT/US2004/034449
申请日：2004-10-18
申请人： APPLIED MATERIALS, INC. , WEIDMAN, Timothy , ZHU, Zhize
发明人： WEIDMAN, Timothy , ZHU, Zhize
IPC分类号： C23C18/31
CPC分类号： C23C18/1619 , C23C18/168 , C23C18/1841 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76874
摘要： Embodiments of the invention generally provide compositions of plating solutions, methods to mix plating solutions and methods to deposit capping layers with plating solutions. The plating solutions described herein may be used as electroless deposition solutions to deposit capping layers on conductive features. The plating solutions are rather dilute and contain strong reductants to self-initiate on the conductive features. The plating solutions may provide in-situ cleaning processes for the conductive layer while depositing capping layers free of particles. In one embodiment, a method for forming an electroless deposition solution is provided which includes combining de-ionized water with a conditioning buffer solution comprising a first complexing agent, a cobalt-containing solution comprising a cobalt source and a second complexing agent and a buffered reducing solution comprising a hypophosphite source and a borane reductant.
摘要翻译：本发明的实施方案通常提供电镀溶液的组合物，混合电镀溶液的方法和用电镀溶液沉积覆盖层的方法。本文所述的电镀溶液可用作无电镀沉积溶液以在导电特征上沉积覆盖层。电镀溶液相当稀释并含有强的还原剂，以在导电特征上自引发。电镀溶液可以提供导电层的原位清洁工艺，同时沉积没有颗粒的覆盖层。在一个实施方案中，提供了一种形成无电沉积溶液的方法，其包括将去离子水与包含第一络合剂，含钴源和第二络合剂的含钴溶液和缓冲还原剂溶液包含次磷酸盐源和硼烷还原剂。

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