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    • 1. 发明申请
    • MICROWAVE POWER DELIVERY SYSTEM FOR PLASMA REACTORS
    • 用于等离子体反应器的微波功率输送系统
    • WO2012084658A1
    • 2012-06-28
    • PCT/EP2011/072822
    • 2011-12-14
    • ELEMENT SIX LIMITEDWORT, Christopher, John, HowardBRANDON, John, Robert
    • WORT, Christopher, John, HowardBRANDON, John, Robert
    • C23C16/27C23C16/511H01J37/32H01P5/04H01P5/20
    • H01J37/32229C23C16/274C23C16/511C23C16/54H01J37/32192H01J37/32256H01J37/32266H01J2237/3321H01P5/20H01P5/222
    • A microwave power delivery system for supplying microwave power to a plurality of microwave plasma reactors (8), the microwave power delivery system comprising: a tuner (14) configured to be coupled to a microwave source (4) and configured to match impedance of the plurality of microwave plasma reactors to that of the microwave source; and a waveguide junction (18) coupled to the tuner and configured to guide microwaves to and from the plurality of microwave plasma reactors, wherein the waveguide junction comprises four waveguide ports including a first port coupled to the tuner, second and third ports configured to be coupled to respective microwave plasma reactors, and a fourth port coupled to a microwave sink (20), wherein the waveguide junction is configured to evenly split microwave power input from the tuner through the first port between the second and third ports for providing microwave power to respective microwave plasma reactors, wherein the waveguide junction is configured to decouple the second and third ports thereby preventing any reflected microwaves from one of the microwave plasma reactors from feeding across the waveguide junction directly into another microwave plasma reactor causing an imbalance, wherein the waveguide junction is further configured to feed reflected microwaves received back through the second and third ports which are balanced in terms of magnitude and phase to the tuner such that they can be reflected by the tuner and re-used, and wherein the waveguide junction is further configured to feed excess reflected power which is not balanced through the fourth port into the microwave sink.
    • 一种用于向多个微波等离子体反应器(8)提供微波功率的微波功率输送系统,所述微波功率输送系统包括:调谐器(14),其被配置为耦合到微波源(4)并且被配置为使所述微波功率输出系统 多个微波等离子体反应器; 以及波导结(18),其耦合到所述调谐器并且被配置为向所述多个微波等离子体反应器引导微波,其中所述波导结包括四个波导端口,所述波导端口包括耦合到所述调谐器的第一端口,所述第二端口和所述第三端口被配置为 耦合到相应的微波等离子体反应器,以及耦合到微波吸收器(20)的第四端口,其中所述波导结被配置为将从所述调谐器输入的微波功率均匀地分开通过所述第二和第三端口之间的第一端口,以提供微波功率 各个微波等离子体反应器,其中波导结被配置为使第二和第三端口去耦,从而防止来自微波等离子体反应器之一的任何反射的微波直接穿过波导结直接进入另一个引起不平衡的微波等离子体反应器,其中波导结 进一步构造成供给反向收回的反射的微波 gh第二和第三端口,其在幅度和相位方面与调谐器平衡,使得它们可以被调谐器反射并重新使用,并且其中波导结还被配置为馈送不平衡的多余的反射功率 第四口进入微波槽。
    • 5. 发明申请
    • A MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL
    • 用于制造合成金刚石材料的微波等离子体反应器
    • WO2012084661A1
    • 2012-06-28
    • PCT/EP2011/072825
    • 2011-12-14
    • ELEMENT SIX LIMITEDCOE, Steven EdwardWILMAN, Jonathan JamesTWITCHEN, Daniel JamesSCARSBROOK, Geoffrey AlanBRANDON, John RobertWORT, Christopher John Howard
    • COE, Steven EdwardWILMAN, Jonathan JamesTWITCHEN, Daniel JamesSCARSBROOK, Geoffrey AlanBRANDON, John RobertWORT, Christopher John Howard
    • H01J37/32C30B29/04
    • C23C16/45563C23C16/274C23C16/45504C23C16/45565C23C16/511C30B25/105C30B29/04H01J37/32192H01J37/32238H01J37/3244H01J37/32449
    • A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the gas flow system comprises a gas inlet nozzle array comprising a plurality of gas inlet nozzles disposed opposite the substrate holder for directing process gases towards the substrate holder, the gas inlet nozzle array comprising: at least six gas inlet nozzles disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber; a gas inlet nozzle number density equal to or greater than 0.1 nozzles/cm 2 , wherein the gas inlet nozzle number density is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber and measuring the gas inlet number density on said plane;and a nozzle area ratio of equal to or greater than 10, whereinthe nozzle area ratio is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber, measuring the total area of the gas inlet nozzle area on said plane, dividing by the total number of nozzles to give an area associated with each nozzle, and dividing the area associated with each nozzle by an actual area of each nozzle.
    • 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器,所述微波等离子体反应器包括:等离子体室; 设置在等离子体室中的衬底保持器,用于支撑在使用中沉积合成金刚石材料的衬底; 用于将微波从微波发生器馈入等离子体室的微波耦合配置; 以及用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 其中所述气体流动系统包括气体入口喷嘴阵列,所述气体入口喷嘴阵列包括与所述衬底保持器相对设置的多个气体入口喷嘴,用于将工艺气体引向所述衬底保持器,所述气体入口喷嘴阵列包括:至少六个气体入口喷嘴, 或相对于等离子体室的中心轴线的发散取向; 气体入口喷嘴数密度等于或大于0.1喷嘴/ cm2,其中气体入口喷嘴数密度通过将喷嘴投影到平行于等离子体室的中心轴线的平面上并测量气体入口数 所述平面上的密度;以及等于或大于10的喷嘴面积比,其中喷嘴面积比通过将喷嘴投射到平行于等离子体室的中心轴线的平面上测量,测量总面积 在所述平面上的气体入口喷嘴面积除以总喷嘴数量以给出与每个喷嘴相关联的区域,并且将与每个喷嘴相关联的区域除以每个喷嘴的实际面积。