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1. 发明申请

WO2012167027A2 PROTECTIVE LAYER FOR PROTECTING TSV TIPS DURING THERMO-COMPRESSIVE BONDING 审中-公开
标题翻译：用于在热压结合期间保护TSV提示的保护层
公开(公告)号：WO2012167027A2
公开(公告)日：2012-12-06
申请号：PCT/US2012/040388
申请日：2012-06-01
申请人： TEXAS INSTRUMENTS INCORPORATED , TEXAS INSTRUMENTS JAPAN LIMITED , WEST, Jeffrey, Alan
发明人： WEST, Jeffrey, Alan
IPC分类号： H01L21/768 , H01L21/60 , H01L23/48
CPC分类号： H01L23/538 , H01L21/563 , H01L23/481 , H01L23/562 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/32 , H01L24/81 , H01L2224/13009 , H01L2224/13025 , H01L2224/13027 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13147 , H01L2224/13566 , H01L2224/1357 , H01L2224/13582 , H01L2224/13644 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/13666 , H01L2224/13671 , H01L2224/13673 , H01L2224/13681 , H01L2224/14181 , H01L2224/1613 , H01L2224/16146 , H01L2224/16148 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81002 , H01L2224/81005 , H01L2224/81007 , H01L2224/81203 , H01L2224/81801 , H01L2924/1461 , H01L2924/15311 , H01L2924/3511 , H01L2924/3512 , H01L2924/014 , H01L2924/00 , H01L2924/00014 , H01L2924/01015 , H01L2924/01005 , H01L2924/01074
摘要： A method (100) of protecting through-substrate via (TSV) die from bonding damage includes providing a substrate including a plurality of TSV die having a topside including active circuitry, a bottomside, and a plurality of TSVs that include an inner metal core that reaches from the topside to protruding TSV tips that extend out from the bottomside (101). A protective layer is formed on or applied to the bottomside of the TSV die including between and over the protruding TSV tips (102). The TSV die is bonded with its topside down onto a workpiece having a workpiece surface and its bottomside up and in contact with a bond head (104). The protective layer reduces damage from the bonding process including warpage of the TSV die by preventing the bond head from making direct contact to the protruding TSV tips.
摘要翻译：保护通过（TSV）管芯的通过衬底的接合损伤的方法（100）包括提供包括多个TSV管芯的衬底，所述TSV管芯具有包括有源电路，底部和多个TSV的顶部，所述TSV包括内部金属芯，从顶部到达突出的TSV尖端，从底部延伸出来（101）。在TSV管芯的底部上形成保护层，包括在突出的TSV尖端（102）之间和之上。 TSV模具的上下结合到具有工件表面的工件上，并且其底部向上并与接合头（104）接触。保护层通过防止接合头与突出的TSV尖端直接接触来减少接合过程中的损伤，包括TSV模头的翘曲。

2. 发明申请

WO2012037140A3 INTEGRATED CIRCUITS WITH THROUGH-SUBSTRATE VIAS 审中-公开
标题翻译：集成电路通过基板VIAS
公开(公告)号：WO2012037140A3
公开(公告)日：2012-05-31
申请号：PCT/US2011051419
申请日：2011-09-13
申请人： TEXAS INSTRUMENTS INC , TEXAS INSTRUMENTS JAPAN , WEST JEFFREY A , PARK YOUNG-JOON
发明人： WEST JEFFREY A , PARK YOUNG-JOON
IPC分类号： H01L21/60 , H01L23/48
CPC分类号： H01L23/481 , H01L24/05 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L2224/0401 , H01L2224/05009 , H01L2224/05025 , H01L2224/05073 , H01L2224/05082 , H01L2224/05562 , H01L2224/0557 , H01L2224/05573 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/06181 , H01L2224/08503 , H01L2224/13025 , H01L2224/13082 , H01L2224/13083 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/16146 , H01L2224/16503 , H01L2224/81193 , H01L2224/81411 , H01L2224/81447 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2224/05552
摘要： A through-substrate via (TSV) die (200) includes a plurality of TSVs (216) including an outer dielectric sleeve (221) and an inner metal core (220) and protruding TSV tips (217) including sidewalls that emerge from the TSV die. A passivation layer (231) lateral to the protruding TSV tips is on a portion of the sidewalls of the protruding TSV tips. The passivation layers is absent from a distal portion of the protruding TSV tips to provide an exposed portion of the inner metal core. The TSV tips include bulbous distal tip ends (217(a) including a first metal layer (241) including a first metal other than solder and a second metal layer (242) including a second metal other than solder that covers the exposed tip portion. The bulbous distal tip ends cover a portion of the TSV sidewalls and are over a topmost surface of the outer dielectric sleeve, and have a maximum cross-sectional area that is > 25 % more as compared to a cross-sectional area of the protruding TSV tips below the bulbous distal tip ends.
摘要翻译：穿透衬底通孔（TSV）管芯（200）包括多个TSV（216），所述多个TSV包括外部电介质套管（221）和内部金属芯（220），并且突出TSV尖端（217）包括从TSV 死。突出TSV尖端侧向的钝化层（231）位于突出TSV尖端的侧壁的一部分上。突出TSV尖端的远端部分不具有钝化层以提供内金属芯的暴露部分。 TSV尖端包括球形远端尖端（217（a）），其包括包含除焊料之外的第一金属的第一金属层（241）和包含除覆盖暴露尖端部分的焊料之外的第二金属的第二金属层（242）。球状远侧末端端部覆盖TSV侧壁的一部分并位于外部电介质套管的最顶部表面上方，并且与突出TSV的横截面区域相比，最大横截面积大于> 25％在球状远端尖端下方的尖端。

3. 发明申请

WO2012044733A2 NON-CONTACT DETERMINATION OF JOINT INTEGRITY BETWEEN A TSV DIE AND A PACKAGE SUBSTRATE 审中-公开
标题翻译：非接触式确定TSV DIE和封装基板之间的接合精度
公开(公告)号：WO2012044733A2
公开(公告)日：2012-04-05
申请号：PCT/US2011/053824
申请日：2011-09-29
申请人： TEXAS INSTRUMENTS INCORPORATED , TEXAS INSTRUMENTS JAPAN LIMITED , WEST, Jeffrey, A.
发明人： WEST, Jeffrey, A.
IPC分类号： H01L21/66 , H01L21/60 , H01L23/48
CPC分类号： H01L22/14 , G01R31/307 , H01L2924/0002 , H01L2924/00
摘要： A non-contact voltage contrast (VC) method of determining TSV joint integrity after partial assembly is provided. A TSV die is provided (101) including TSVs that extend from a front side of the TSV die to TSV tips on a bottom side of the TSV die. At least some TSVs (contacting TSVs) are attached to pads on a top surface of a multilayer (ML) package substrate. The ML package substrate is on a substrate carrier that blocks electrical access to the front side of the TSV die. Two or more nets including groups of contacting TSVs are tied common within the ML substrate. A charged particle reference beam is directed (102) to a selected TSV within a first net and a charged particle primary beam is then rastered (103) across the TSVs in the first net. VC signals emitted are detected (104), and joint integrity for the contacting TSVs to pads of the ML package substrate is determined (105) from the VC signals.
摘要翻译：提供了在部分组装后确定TSV接头完整性的非接触电压对比（VC）方法。提供TSV管芯（101），其包括从TSV管芯的前侧延伸到TSV管芯的底侧的TSV端头的TSV。至少一些TSV（接触TSV）附着到多层（ML）封装衬底的顶表面上的焊盘。 ML封装衬底位于衬底载体上，阻挡对TSV管芯前端的电气接入。两个或更多个网络，包括接触TSV的组在ML衬底内是共同的。将带电粒子参考光束（102）引导到第一网络内的选定TSV，然后将带电粒子主波束跨越第一网络中的TSV进行扫描（103）。检测到发射的VC信号（104），并且根据VC信号确定与ML封装衬底的焊盘的接触TSV的接合完整性（105）。

4. 发明申请

WO2011093956A2 PROTRUDING TSV TIPS FOR ENHANCED HEAT DISSIPATION FOR IC DEVICES 审中-公开
标题翻译：突破TSV提示增强集成电路器件的散热
公开(公告)号：WO2011093956A2
公开(公告)日：2011-08-04
申请号：PCT/US2010/061033
申请日：2010-12-17
申请人： TEXAS INSTRUMENTS INCORPORATED , TEXAS INSTRUMENTS JAPAN LIMITED , MAWATARI, Kazuaki , AOYA, Kengo , UMEDA, Yoshikatsu , WEST, Jeffrey, A.
发明人： MAWATARI, Kazuaki , AOYA, Kengo , UMEDA, Yoshikatsu , WEST, Jeffrey, A.
IPC分类号： H01L21/60 , H01L23/36
CPC分类号： H01L24/16 , H01L23/3677 , H01L23/481 , H01L25/0657 , H01L2224/05124 , H01L2224/05147 , H01L2224/13009 , H01L2224/13099 , H01L2224/16235 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06589 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01025 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15151 , H01L2924/15787 , H01L2924/19041 , H01L2924/00 , H01L2924/00014
摘要： An integrated circuit device (100) includes a substrate (110) having a top surface including substrate pads (112), and a through-substrate via (115) die including a semiconductor substrate (105) including a top semiconductor surface (106) having active circuitry and a bottom surface (106). The top semiconductor surface (107) includes bonding connectors (109) that are coupled to the substrate pads on the top surface of the substrate. A plurality of through- substrate vias (TSVs) include an inner metal core (125) that extends from the top side semiconductor surface to protruding TSV tips (121) which extend out from the bottom surface. At least one of the plurality of TSVs is a dummy TSV (120) that has its protruding TSV tip exclusive of any electrically connection thereto and that provides additional surface area to enhance heat dissipation from the bottom side of the TSV die.
摘要翻译：集成电路器件（100）包括具有包括衬底焊盘（112）的顶表面的衬底（110）以及包括半导体衬底（105）的贯通衬底通孔（115）裸片，所述半导体衬底包括半导体衬底具有有源电路和底面（106）的顶部半导体表面（106）。顶部半导体表面（107）包括结合连接器（109），结合连接器（109）耦合到衬底顶表面上的衬底焊盘。多个贯穿基板通孔（TSV）包括从顶侧半导体表面延伸到从底表面延伸出的突出TSV尖端（121）的内部金属芯（125）。多个TSV中的至少一个是伪TSV（120），其具有突出的TSV尖端而不与任何电连接，并且提供额外的表面区域以增强从TSV裸片的底侧的散热。

5. 发明申请

WO2012044733A3 NON-CONTACT DETERMINATION OF JOINT INTEGRITY BETWEEN A TSV DIE AND A PACKAGE SUBSTRATE 审中-公开
标题翻译：非接触式确定TSV裸片与封装衬底之间的连接完整性
公开(公告)号：WO2012044733A3
公开(公告)日：2012-06-14
申请号：PCT/US2011053824
申请日：2011-09-29
申请人： TEXAS INSTRUMENTS INC , TEXAS INSTRUMENTS JAPAN , WEST JEFFREY A
发明人： WEST JEFFREY A
IPC分类号： H01L21/66 , H01L21/60 , H01L23/48
CPC分类号： H01L22/14 , G01R31/307 , H01L2924/0002 , H01L2924/00
摘要： A non-contact voltage contrast (VC) method of determining TSV joint integrity after partial assembly is provided. A TSV die is provided (101) including TSVs that extend from a front side of the TSV die to TSV tips on a bottom side of the TSV die. At least some TSVs (contacting TSVs) are attached to pads on a top surface of a multilayer (ML) package substrate. The ML package substrate is on a substrate carrier that blocks electrical access to the front side of the TSV die. Two or more nets including groups of contacting TSVs are tied common within the ML substrate. A charged particle reference beam is directed (102) to a selected TSV within a first net and a charged particle primary beam is then rastered (103) across the TSVs in the first net. VC signals emitted are detected (104), and joint integrity for the contacting TSVs to pads of the ML package substrate is determined (105) from the VC signals.
摘要翻译：提供了在部分组装之后确定TSV接头完整性的非接触电压对比（VC）方法。提供了包括TSV的TSV裸片（101），所述TSV从TSV裸片的正面延伸到TSV裸片的底面上的TSV尖端。至少一些TSV（接触TSV）被附着到多层（ML）封装衬底的顶表面上的焊盘。 ML封装衬底位于衬底载体上，阻挡对TSV裸片正面的电气通路。包括接触式TSV组的两个或更多网络在ML衬底内是公共的。带电粒子参考束被引导（102）到第一网内的选定TSV，然后带电粒子主束在第一网中的TSV上被光栅化（103）。检测发射的VC信号（104），并且从VC信号确定（105）接触TSV到ML封装衬底的焊盘的接合完整性。

6. 发明申请

WO2012037140A2 INTEGRATED CIRCUITS WITH THROUGH-SUBSTRATE VIAS 审中-公开
标题翻译：集成电路与基板VIAS
公开(公告)号：WO2012037140A2
公开(公告)日：2012-03-22
申请号：PCT/US2011/051419
申请日：2011-09-13
申请人： TEXAS INSTRUMENTS INCORPORATED , TEXAS INSTRUMENTS JAPAN LIMITED , WEST, Jeffrey, A. , PARK, Young-joon
发明人： WEST, Jeffrey, A. , PARK, Young-joon
IPC分类号： H01L21/60 , H01L23/48
CPC分类号： H01L23/481 , H01L24/05 , H01L24/08 , H01L24/13 , H01L24/16 , H01L24/81 , H01L24/94 , H01L25/0657 , H01L2224/0401 , H01L2224/05009 , H01L2224/05025 , H01L2224/05073 , H01L2224/05082 , H01L2224/05562 , H01L2224/0557 , H01L2224/05573 , H01L2224/05644 , H01L2224/05655 , H01L2224/05664 , H01L2224/06181 , H01L2224/08503 , H01L2224/13025 , H01L2224/13082 , H01L2224/13083 , H01L2224/13144 , H01L2224/13155 , H01L2224/13164 , H01L2224/16145 , H01L2224/16146 , H01L2224/16503 , H01L2224/81193 , H01L2224/81411 , H01L2224/81447 , H01L2224/94 , H01L2225/06513 , H01L2225/06541 , H01L2924/00014 , H01L2924/0002 , H01L2924/01005 , H01L2924/01013 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01045 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/00 , H01L2224/05552
摘要： A through-substrate via (TSV) die (200) includes a plurality of TSVs (216) including an outer dielectric sleeve (221) and an inner metal core (220) and protruding TSV tips (217) including sidewalls that emerge from the TSV die. A passivation layer (231) lateral to the protruding TSV tips is on a portion of the sidewalls of the protruding TSV tips. The passivation layers is absent from a distal portion of the protruding TSV tips to provide an exposed portion of the inner metal core. The TSV tips include bulbous distal tip ends (217(a) including a first metal layer (241) including a first metal other than solder and a second metal layer (242) including a second metal other than solder that covers the exposed tip portion. The bulbous distal tip ends cover a portion of the TSV sidewalls and are over a topmost surface of the outer dielectric sleeve, and have a maximum cross-sectional area that is > 25 % more as compared to a cross-sectional area of the protruding TSV tips below the bulbous distal tip ends.
摘要翻译：贯穿衬底通孔（TSV）管芯（200）包括多个TSV（216），其包括外部电介质套管（221）和内部金属芯体（220），并且突出的TSV尖端（217）包括从TSV出现的侧壁死。突出的TSV尖端侧面的钝化层（231）位于突出的TSV尖端的侧壁的一部分上。钝化层不存在于突出的TSV尖端的远端部分，以提供内金属芯的暴露部分。 TSV尖端包括球茎远端尖端（217（a）），其包括包括除焊料之外的第一金属的第一金属层（241）和包括除了暴露尖端部分的焊料以外的第二金属的第二金属层（242）。球茎远侧末端覆盖TSV侧壁的一部分并且在外部介电套筒的最上表面之上，并且与突出TSV的横截面面积相比，其最大横截面面积> 25％球茎远端尖端下方的尖端。

7. 发明申请

WO2008061122A2 SEMICONDUCTOR DEVICE MANUFACTURED USING AN ELECTROCHEMICAL DEPOSITION PROCESS FOR COPPER INTERCONNECTS 审中-公开
标题翻译：使用电化学沉积工艺制造的半导体器件用于铜互连
公开(公告)号：WO2008061122A2
公开(公告)日：2008-05-22
申请号：PCT/US2007/084640
申请日：2007-11-14
申请人： TEXAS INSTRUMENTS INCORPORATED , LEAVY, Montray, Cantrell , WEST, Jeffrey, Alan , MCPHERSON, Kyle, James , FAUST, Richard, Allen , WU, Lixin
发明人： LEAVY, Montray, Cantrell , WEST, Jeffrey, Alan , MCPHERSON, Kyle, James , FAUST, Richard, Allen , WU, Lixin
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/53238 , C25D3/38 , C25D5/02 , C25D5/10 , C25D7/123 , H01L21/2885 , H01L21/76873 , H01L21/76877 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device (100) comprises forming an insulating layer (105) over a semiconductive substrate (110) and forming a copper interconnect. Forming the interconnect includes etching an interconnect opening in the insulating layer and filling the opening with copper plating. Filling with copper plating includes using a first and second electrochemical deposition (ECD). An electrolyte solution of the first and second electrochemical deposition contains organic additives, and a current of the first electrochemical deposition is greater than a current of the second electrochemical deposition.
摘要翻译：制造半导体器件（100）的方法包括在半导体衬底（110）上形成绝缘层（105）并形成铜互连。形成互连包括蚀刻绝缘层中的互连开口并用铜电镀填充开口。填充镀铜包括使用第一和第二电化学沉积（ECD）。第一和第二电化学沉积物的电解质溶液含有有机添加剂，并且第一电化学沉积的电流大于第二电化学沉积的电流。

8. 发明申请

WO2007140258A2 PERFORATING METHODS AND DEVICES FOR HIGH WELLBORE PRESSURE APPLICATIONS 审中-公开
标题翻译：高压井压应用的执行方法和装置
公开(公告)号：WO2007140258A2
公开(公告)日：2007-12-06
申请号：PCT/US2007/069665
申请日：2007-05-24
申请人： OWEN OIL TOOLS LP , LAGRANGE, Timothy, Edward , PRATT, Dan, W. , WEST, Jeffrey, Michael , WEISNER, Lesley, Alan , HOELSCHER, Christopher
发明人： LAGRANGE, Timothy, Edward , PRATT, Dan, W. , WEST, Jeffrey, Michael , WEISNER, Lesley, Alan , HOELSCHER, Christopher
IPC分类号： E21B29/02
CPC分类号： E21B43/116 , E21B43/117 , E21B43/119
摘要： A carrier tube for use in a wellbore perforating gun has inner and outer layers selected from materials of different, comparative physical properties. The inner layer has a higher compressive strength, and the outer layer has a higher yield strength. The inner layer enables the tube to withstand wellbore compressive pressures, which may, depending upon the material selected, include relatively high pressures, while the outer layer contains any fragments of the inner layer that result upon detonation of the gun. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：用于井眼穿孔枪的载体管具有从不同的物理性质的材料中选择的内层和外层。内层具有较高的抗压强度，外层具有较高的屈服强度。内层使得管能够承受井筒压缩压力，其可以根据所选择的材料包括相对高的压力，而外层包含导致喷枪引爆的内层的任何碎片。要强调的是，该摘要被提供以符合要求摘要的规则，这将允许搜索者或其他读者快速确定技术公开的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

9. 发明申请

WO2012167027A3 PROTECTIVE LAYER FOR PROTECTING TSV TIPS DURING THERMO-COMPRESSIVE BONDING 审中-公开
标题翻译：用于在热压结合期间保护TSV提示的保护层
公开(公告)号：WO2012167027A3
公开(公告)日：2013-04-25
申请号：PCT/US2012040388
申请日：2012-06-01
申请人： TEXAS INSTRUMENTS INC , TEXAS INSTRUMENTS JAPAN , WEST JEFFREY ALAN
发明人： WEST JEFFREY ALAN
IPC分类号： H01L21/768 , H01L21/60 , H01L23/48
CPC分类号： H01L23/538 , H01L21/563 , H01L23/481 , H01L23/562 , H01L24/13 , H01L24/14 , H01L24/16 , H01L24/32 , H01L24/81 , H01L2224/13009 , H01L2224/13025 , H01L2224/13027 , H01L2224/13082 , H01L2224/13083 , H01L2224/131 , H01L2224/13147 , H01L2224/13566 , H01L2224/1357 , H01L2224/13582 , H01L2224/13644 , H01L2224/13655 , H01L2224/13657 , H01L2224/13664 , H01L2224/13666 , H01L2224/13671 , H01L2224/13673 , H01L2224/13681 , H01L2224/14181 , H01L2224/1613 , H01L2224/16146 , H01L2224/16148 , H01L2224/16225 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81002 , H01L2224/81005 , H01L2224/81007 , H01L2224/81203 , H01L2224/81801 , H01L2924/1461 , H01L2924/15311 , H01L2924/3511 , H01L2924/3512 , H01L2924/014 , H01L2924/00 , H01L2924/00014 , H01L2924/01015 , H01L2924/01005 , H01L2924/01074
摘要： A method (100) of protecting through-substrate via (TSV) die from bonding damage includes providing a substrate including a plurality of TSV die having a topside including active circuitry, a bottomside, and a plurality of TSVs that include an inner metal core that reaches from the topside to protruding TSV tips that extend out from the bottomside (101). A protective layer is formed on or applied to the bottomside of the TSV die including between and over the protruding TSV tips (102). The TSV die is bonded with its topside down onto a workpiece having a workpiece surface and its bottomside up and in contact with a bond head (104). The protective layer reduces damage from the bonding process including warpage of the TSV die by preventing the bond head from making direct contact to the protruding TSV tips.
摘要翻译：保护通过（TSV）管芯的通过衬底的接合损伤的方法（100）包括提供包括多个TSV管芯的衬底，所述TSV管芯具有包括有源电路，底部和多个TSV的顶部，所述TSV包括内部金属芯，从顶部到达突出的TSV尖端，从底部延伸出来（101）。在TSV模头的底部上形成保护层，包括在突出的TSV尖端（102）之间和之上。 TSV模具的上下结合到具有工件表面的工件上，并且其底部向上并与接合头（104）接触。保护层通过防止接合头与突出的TSV尖端直接接触来减少接合过程中的损伤，包括TSV模头的翘曲。

10. 发明申请

WO2011093956A3 PROTRUDING TSV TIPS FOR ENHANCED HEAT DISSIPATION FOR IC DEVICES 审中-公开
标题翻译：推出用于IC器件的增强散热的TSV提示
公开(公告)号：WO2011093956A3
公开(公告)日：2011-10-13
申请号：PCT/US2010061033
申请日：2010-12-17
申请人： TEXAS INSTRUMENTS INC , TEXAS INSTRUMENTS JAPAN , MAWATARI KAZUAKI , AOYA KENGO , UMEDA YOSHIKATSU , WEST JEFFREY A
发明人： MAWATARI KAZUAKI , AOYA KENGO , UMEDA YOSHIKATSU , WEST JEFFREY A
IPC分类号： H01L21/60 , H01L23/36
CPC分类号： H01L24/16 , H01L23/3677 , H01L23/481 , H01L25/0657 , H01L2224/05124 , H01L2224/05147 , H01L2224/13009 , H01L2224/13099 , H01L2224/16235 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06589 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01022 , H01L2924/01025 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/1461 , H01L2924/15151 , H01L2924/15787 , H01L2924/19041 , H01L2924/00 , H01L2924/00014
摘要： An integrated circuit device (100) includes a substrate (110) having a top surface including substrate pads (112), and a through-substrate via (115) die including a semiconductor substrate (105) including a top semiconductor surface (106) having active circuitry and a bottom surface (106). The top semiconductor surface (107) includes bonding connectors (109) that are coupled to the substrate pads on the top surface of the substrate. A plurality of through- substrate vias (TSVs) include an inner metal core (125) that extends from the top side semiconductor surface to protruding TSV tips (121) which extend out from the bottom surface. At least one of the plurality of TSVs is a dummy TSV (120) that has its protruding TSV tip exclusive of any electrically connection thereto and that provides additional surface area to enhance heat dissipation from the bottom side of the TSV die.
摘要翻译：集成电路器件（100）包括具有包括衬底焊盘（112）的顶表面的衬底（110）和包括半导体衬底（105）的贯穿衬底通孔（115）裸片，该半导体衬底包括顶部半导体表面（106）有源电路和底表面（106）。顶部半导体表面（107）包括结合连接器（109），其连接到衬底顶表面上的衬底焊盘。多个通孔衬底通孔（TSV）包括从顶侧半导体表面延伸到从底表面延伸出的突出TSV尖端（121）的内金属芯（125）。多个TSV中的至少一个是虚拟TSV（120），其具有其突出的TSV尖端，不包括任何电连接，并且提供额外的表面积以增强从TSV管芯的底侧的散热。

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