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1. 发明申请

WO2007112370A1 ATOMIC LAYER DEPOSITION SYSTEM AND METHOD FOR COATING FLEXIBLE SUBSTRATES 审中-公开
标题翻译：原子层沉积系统和涂层柔性基板的方法
公开(公告)号：WO2007112370A1
公开(公告)日：2007-10-04
申请号：PCT/US2007/064961
申请日：2007-03-26
申请人： PLANAR SYSTEMS, INC. , DICKEY, Eric R. , BARROW, William A.
发明人： DICKEY, Eric R. , BARROW, William A.
IPC分类号： H05B33/10 , C23C14/54
CPC分类号： C23C16/545 , C23C16/45551
摘要： Systems and methods for atomic layer deposition (ALD) on a flexible substrate involve guiding the substrate (12, 112, 316) back and forth between spaced-apart first and second precursor zones (14, 16, 114, 116, 314, 316), so that the substrate transits through each of the precursor zones multiple times. Systems may include a series of turning guides (64, 66, 164, 166, 364, 366), such as rollers, spaced apart along the precursor zones for supporting the substrate along an undulating transport path. As the substrate traverses back and forth between precursor zones, it passes through a series of flow-restricting passageways (54, 56, 154, 156, 354, 356) of an isolation zone (20, 120, 320) into which an inert gas is injected to inhibit migration of precursor gases out of the precursor zones. Also disclosed are systems and methods for utilizing more than two precursor chemicals and for recycling precursor gases exhausted from the precursor zones.
摘要翻译：用于在柔性基底上的原子层沉积（ALD）的系统和方法包括在间隔开的第一和第二前体区（14,16,114,116,314,316）之间来回引导衬底（12,112,316），使得基板多次穿过每个前体区域。系统可以包括一系列转动引导件（64,66,164,166,364,366），例如沿着前体区间隔开的辊，沿着起伏的输送路径支撑基底。当衬底在前体区域之间来回移动时，其穿过隔离区（20,120,320）的一系列流动限制通道（54,56,154,156,354,356），惰性气体被注入以抑制前体气体从前体区域迁移。还公开了用于利用两种以上前体化学品和用于再循环从前体区排出的前体气体的系统和方法。

2. 发明申请

WO2004042804A3 CAPACITOR FABRICATION METHODS AND CAPACITOR STRUCTURES INCLUDING NIOBIUM OXIDE 审中-公开
标题翻译：电容器制造方法和包括氧化镍的电容器结构
公开(公告)号：WO2004042804A3
公开(公告)日：2004-10-07
申请号：PCT/US0334727
申请日：2003-10-31
申请人： PLANAR SYSTEMS INC , AITCHISON BRADLEY J , PAKKALA ARTO , KUOSMANEN PEKKA , HAERKOENEN KARI
发明人： AITCHISON BRADLEY J , PAKKALA ARTO , KUOSMANEN PEKKA , HAERKOENEN KARI
IPC分类号： H01G4/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/334 , H01L21/8242 , H01L27/108 , H01L29/94
CPC分类号： H01L27/1085 , H01L21/3142 , H01L21/31604 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L27/10805 , H01L27/10829 , H01L27/10861 , H01L28/84 , H01L29/66181 , H01L29/945
摘要： A dielectric structure (304) formed on a substrate (300) using a thin film deposition technique such as atomic layer deposition (ALD) includes at least one layer of current leakage inhibiting dielectric material (310), such as Al2O3, HfO2, or ZrO2, for example, in combination with niobium oxide (Nb2O5). The Nb2O5 is either incorporated into the dielectric structure as a dopant in a layer of the current leakage inhibiting material (310) or as one or more separate layers (320, 340) in addition to the layer or layers of current leakage inhibiting material (310). The dielectric structure (304) may be used in miniature capacitors for integrated circuit devices such as DRAM devices, for example. In some embodiments, one or more capacitor electrodes (300, 390) are formed around the dielectric structure (304) in the same ALD processing system. One or more of the electrodes (300, 390) may comprise a transition metal nitride, a noble metal, or a noble metal alloy.
摘要翻译：使用诸如原子层沉积（ALD）的薄膜沉积技术在衬底（300）上形成的电介质结构（304）包括至少一层电流泄漏抑制电介质材料（310），诸如Al 2 O 3，HfO 2或ZrO 2 例如与氧化铌（Nb 2 O 5）组合。除了电流泄漏抑制材料（310）的层或层之外，Nb 2 O 5或者作为电流泄漏抑制材料（310）的层中的掺杂剂或作为一个或多个分离层（320,340）而掺入到电介质结构中）。电介质结构（304）可以用于诸如DRAM器件的集成电路器件的微型电容器中。在一些实施例中，在相同的ALD处理系统中，围绕电介质结构（304）形成一个或多个电容器电极（300,390）。一个或多个电极（300,390）可以包括过渡金属氮化物，贵金属或贵金属合金。

3. 发明申请

WO2022073039A1 LED MODULE POSITIONING SYSTEM 审中-公开
公开(公告)号：WO2022073039A1
公开(公告)日：2022-04-07
申请号：PCT/US2021/071687
申请日：2021-10-01
申请人： PLANAR SYSTEMS, INC.
发明人： SCHUETTKE, Eric , SMITH, Matt , BRASHNYK, Neil
IPC分类号： G09F9/302
摘要： A system for mounting and positioning an array of panels, such as display modules (12) of an electronic display device (10), includes a plurality of springs (32, 34) supported on a chassis (14) that includes an array of cavities (28) bordered by multiple ribs (24, 26). Each of the panels is supported on front surfaces of the ribs to establish a Z position of the panel. Each panel is engaged by one or more of the springs to press together abutting edges of adjacent panels, which may reduce the appearance of seams (16) between adjacent pairs of panels and accommodate thermal expansion. Magnetic elements (44, 52) retain each panel to the chassis in the Z direction while allowing the panels to float on the springs in the X and Y directions. Magnetically-actuated retention hooks (54) allow the panels to be removed from the chassis without accessing a rear of the system.

4. 发明申请

WO2021168365A1 RUGGEDIZED DV-LED DISPLAY SYSTEMS AND MODULES, AND METHODS OF MANUFACTURING DV-LED DISPLAYS 审中-公开
公开(公告)号：WO2021168365A1
公开(公告)日：2021-08-26
申请号：PCT/US2021/018923
申请日：2021-02-19
申请人： PLANAR SYSTEMS, INC.
发明人： LUTY, Pete , KREBSBACH, Seth , EWELL, Garrett
IPC分类号： F21Y101/00 , F21Y105/00 , F21Y115/10 , F21K9/20 , G09F9/33 , G09G3/32 , H05K1/03
摘要： A ruggedized direct-view LED display system (100) includes a bonding matrix (215) that helps secure an array of LED chips (205) to a printed circuit board (PCB) (210). The bonding matrix may consist of an epoxy or other resin deposited on the surface (310) of the PCB after soldering the LED chips to the PCB. The bonding matrix has a thickness that is less than the thickness of the LED chips so that light-emitting outer portions (415) of the LED chips are not covered by the bonding matrix material. A method of forming the bonding matrix is also disclosed, including depositing bonding matrix material onto the PCB between the LED chips using nozzles or needles, optionally wicking excess bonding matrix material, and optionally degassing the bonding matrix material before curing it to form the bonding matrix.

5. 发明申请

WO2008016836A3 RADICAL-ENHANCED ATOMIC LAYER DEPOSITION SYSTEM AND METHOD 审中-公开
标题翻译：自由基增强的原子层沉积系统和方法
公开(公告)号：WO2008016836A3
公开(公告)日：2008-03-20
申请号：PCT/US2007074521
申请日：2007-07-26
申请人： PLANAR SYSTEMS INC , DICKEY ERIC R , BARROW WILLIAM A
发明人： DICKEY ERIC R , BARROW WILLIAM A
IPC分类号： H01L21/20
CPC分类号： C23C16/45551 , C23C16/452 , C23C16/545
摘要： A radical-enhanced atomic layer deposition (REALD) system 100 and method involves moving a substrate 180 along a circulating or reciprocating transport path between zones 144, 154 that provide alternating exposure to a precursor gas and a gaseous radical species. The radical species may be generated in-situ within a reaction chamber 110 by an excitation source such as plasma generator 140 or ultraviolet radiation (UV), for example. The gaseous radical species is maintained in a radicals zone 144 within the reaction chamber while a precursor gas is introduced into a precursor zone 154. The precursor zone is spaced apart from the radicals zone to define a radical deactivation zone 158 therebetween. Purge gas flowing through the various zones may provide flow and pressure conditions that substantially prevent the precursor gas from flowing into the radicals zone. In some embodiments, the system includes a partition having one or more flow-restricting passageways though which the substrate is transported.
摘要翻译：自由基增强的原子层沉积（REALD）系统100和方法包括沿着区域144,154之间的循环或往复运输路径移动衬底180，区域144,154提供交替暴露于前体气体和气态自由基物质。自由基物质可以通过例如等离子体发生器140或紫外辐射（UV）等激发源在反应室110内原位产生。气态自由基物质保持在反应室内的自由基区144中，而前体气体被引入前体区154中。前体区与自由基区间隔开以在其间限定自由基去活化区158。流过各个区域的吹扫气体可以提供基本上防止前体气体流入自由基区域的流动和压力条件。在一些实施例中，该系统包括具有一个或多个流量限制通道的隔板，基板通过该通道被输送。

6. 发明申请

WO2008016836A2 RADICAL-ENHANCED ATOMIC LAYER DEPOSITION SYSTEM AND METHOD 审中-公开
标题翻译：辐射增强原子层沉积系统及方法
公开(公告)号：WO2008016836A2
公开(公告)日：2008-02-07
申请号：PCT/US2007/074521
申请日：2007-07-26
申请人： PLANAR SYSTEMS, INC. , DICKEY, Eric R. , BARROW, William A.
发明人： DICKEY, Eric R. , BARROW, William A.
CPC分类号： C23C16/45551 , C23C16/452 , C23C16/545
摘要： A radical-enhanced atomic layer deposition (REALD) system 100 and method involves moving a substrate 180 along a circulating or reciprocating transport path between zones 144, 154 that provide alternating exposure to a precursor gas and a gaseous radical species. The radical species may be generated in-situ within a reaction chamber 110 by an excitation source such as plasma generator 140 or ultraviolet radiation (UV), for example. The gaseous radical species is maintained in a radicals zone 144 within the reaction chamber while a precursor gas is introduced into a precursor zone 154. The precursor zone is spaced apart from the radicals zone to define a radical deactivation zone 158 therebetween. Purge gas flowing through the various zones may provide flow and pressure conditions that substantially prevent the precursor gas from flowing into the radicals zone. In some embodiments, the system includes a partition having one or more flow-restricting passageways though which the substrate is transported.
摘要翻译：自由基增强原子层沉积（REALD）系统100和方法包括沿着提供交替暴露于前体气体和气态自由基物质的区域144,154之间的循环或往复运输路径移动衬底180。例如，可以通过诸如等离子体发生器140的激发源或紫外线辐射（UV）在反应室110内原地产生自由基物质。将气态物质保持在反应室内的自由基区域144中，同时将前体气体引入前体区域154.前体区域与自由基区域间隔开，以在其间限定自由基失活区域158。吹扫流过各个区域的气体可以提供基本上防止前体气体流入自由基区域的流动和压力条件。在一些实施例中，系统包括具有一个或多个流动限制通道的隔板，通过该通道衬底被输送。

7. 发明申请

WO2004095086A2 CONFORMAL COATINGS FOR MICRO-OPTICAL ELEMENTS 审中-公开
标题翻译：适用于微光元件的涂层
公开(公告)号：WO2004095086A2
公开(公告)日：2004-11-04
申请号：PCT/US2004/008762
申请日：2004-03-22
申请人： PLANAR SYSTEMS, INC. , MAULA, Jarmo, Ilmari , TÖRNQVIST, Runar, Olof, Ivar
发明人： MAULA, Jarmo, Ilmari , TÖRNQVIST, Runar, Olof, Ivar
IPC分类号： G02B
CPC分类号： G02B1/113 , C23C16/45525 , C23C16/45555 , G02B1/10 , H01S5/028 , Y10T428/24612
摘要： A micro-optical element is produced through vapor deposition techniques, such as atomic layer deposition. An optical structure (90) having a surface with uneven structures is exposed one or more precursor vapors to create a self-limiting film growth on the surface of the optical structure. The film thickness may be increased and controlled by subsequent exposures. The resulting film (92) conforms to surface structures having varying complex dimensions.
摘要翻译：通过诸如原子层沉积的气相沉积技术制造微光学元件。具有不均匀结构的表面的光学结构（90）暴露一个或多个前体蒸汽，以在光学结构的表面上产生自限制膜生长。可以通过随后的曝光来增加和控制膜厚度。所得到的膜（92）符合具有变化的复杂尺寸的表面结构。

8. 发明申请

WO2004024981A3 PRECURSOR MATERIAL DELIVERY SYSTEM FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的前体材料输送系统
公开(公告)号：WO2004024981A3
公开(公告)日：2004-07-29
申请号：PCT/US0328436
申请日：2003-09-10
申请人： PLANAR SYSTEMS INC , AITCHISON BRADLEY J , MAULA JARMO , LESKINEN HANNU , LANG TEEMU , KUOSMANEN PEKKA , HAERKOENEN KARI , SONNINEN MARTTI
发明人： AITCHISON BRADLEY J , MAULA JARMO , LESKINEN HANNU , LANG TEEMU , KUOSMANEN PEKKA , HAERKOENEN KARI , SONNINEN MARTTI
IPC分类号： C23C16/44 , C30B25/14 , C23C16/455
CPC分类号： B01D45/06 , C23C16/4402 , C23C16/4404 , C23C16/4412 , C23C16/45525 , C23C16/45544 , C23C16/4557 , C30B25/14 , Y10S55/14
摘要： A precursor delivery system (100) includes a flow path (104) from a precursor container (102) to a reaction space (110) of a thin film deposition system, such as an atomic layer deposition reactor. A staging volume (114) is preferably between precursor container (102) and reaction space (110) for receiving at least one dose of precursor material from precursor container (102), from which a series of pulses is released toward reaction space (110). Precursor material is typically vaporized after loading in precursor container (102), by heating or reducing the pressure inside precursor container (102). A vacuum line (156) preferably coupled to precursor container (102) bypasses reaction space (110) for reducing pressure inside precursor container (102) without drawing particles into reaction space (110). A high conductivity particle filter having inertial traps may be included, preferably between precursor container (102) and a staging volume (114), for filtering particles from the precursor material.
摘要翻译：前体递送系统（100）包括从前体容器（102）到诸如原子层沉积反应器的薄膜沉积系统的反应空间（110）的流动路径（104）。分级体积（114）优选在前体容器（102）和反应空间（110）之间，用于从前体容器（102）接收至少一个剂量的前体材料，从反应空间（110）向其释放一系列脉冲，。前体材料通常在加载到前体容器（102）中之后，通过加热或降低前体容器（102）内部的压力而被蒸发。优选地耦合到前体容器（102）的真空管线（156）绕过反应空间（110），用于减小前体容器（102）内的压力，而不将颗粒吸入反应空间（110）。可以包括具有惯性陷阱的高导电性粒子过滤器，优选在前体容器（102）和分级体积（114）之间，用于过滤来自前体材料的颗粒。

9. 发明申请

WO2004042648A3 HAND RECOGNITION SYSTEM 审中-公开
公开(公告)号：WO2004042648A3
公开(公告)日：2004-05-21
申请号：PCT/US2003/034752
申请日：2003-10-30
申请人： PLANAR SYSTEMS INC. , SIEGEL, Roy , DEN BOER, Willem , ABILEAH, Adiel
发明人： SIEGEL, Roy , DEN BOER, Willem , ABILEAH, Adiel
IPC分类号： G06K9/00
摘要： A hand recognition system.

10. 发明申请

WO2019108553A1 ACTIVE DISCHARGE CIRCUITRY FOR DISPLAY MATRIX 审中-公开
公开(公告)号：WO2019108553A1
公开(公告)日：2019-06-06
申请号：PCT/US2018/062656
申请日：2018-11-27
申请人： PLANAR SYSTEMS, INC.
发明人： NADERSHAHI, Shahnad
IPC分类号： G09G3/3225 , G09G3/32 , G09G3/14
摘要： Active discharge circuitry for fast discharging of charge on an LED display matrix includes a mechanism to effectuate circuit path switching so as to electrically connect a charged node to a discharge circuit for controlled discharging of unwanted charge until it reaches a desired (e.g., programmable) value. The active discharge circuitry includes a control circuit generating appropriate timing and digital control signals for starting and stopping (e.g., actuating a switch) the discharge activities. The disclosed techniques accommodate variations in channel-to-channel start times for mitigating ghosting effects that would otherwise be presented from the LED display matrix due to residual (i.e., unwanted) charges remaining electrically loaded on display elements via, for example, charged parasitic capacitance or other such transients, after a current driver of a specific channel has stopped driving.

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