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1. 发明申请

WO2004042804A2 CAPACITOR FABRICATION METHODS AND CAPACITOR STRUCTURES INCLUDING NIOBIUM OXIDE 审中-公开
标题翻译：电容器制造方法和电容器结构，包括氧化铌
公开(公告)号：WO2004042804A2
公开(公告)日：2004-05-21
申请号：PCT/US2003/034727
申请日：2003-10-31
申请人： PLANAR SYSTEMS, INC. , AITCHISON, Bradley, J , PAKKALA, Arto , KUOSMANEN, Pekka , HÄRKÖNEN, Kari
发明人： AITCHISON, Bradley, J , PAKKALA, Arto , KUOSMANEN, Pekka , HÄRKÖNEN, Kari
IPC分类号： H01L21/02
CPC分类号： H01L21/02175 , H01L21/02178 , H01L21/022 , H01L21/0228 , H01L21/02362 , H01L21/3142 , H01L21/31604 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L27/10805 , H01L27/10829 , H01L27/1085 , H01L27/10861 , H01L28/84 , H01L29/66181 , H01L29/945
摘要： A dielectric structure (304) formed on a substrate (300) using a thin film deposition technique such as atomic layer deposition (ALD) includes at least one layer of current leakage inhibiting dielectric material (310), such as Al 2 O 3 , HfO 2 , or ZrO 2 , for example, in combination with niobium oxide (Nb 2 O 5 ). The Nb 2 O 5 is either incorporated into the dielectric structure as a dopant in a layer of the current leakage inhibiting material (310) or as one or more separate layers (320, 340) in addition to the layer or layers of current leakage inhibiting material (310). The dielectric structure (304) may be used in miniature capacitors for integrated circuit devices such as DRAM devices, for example. In some embodiments, one or more capacitor electrodes (300, 390) are formed around the dielectric structure (304) in the same ALD processing system. One or more of the electrodes (300, 390) may comprise a transition metal nitride, a noble metal, or a noble metal alloy.
摘要翻译：使用诸如原子层沉积（ALD）之类的薄膜沉积技术在衬底（300）上形成的电介质结构（304）包括至少一个电流泄漏抑制电介质材料（310）层，例如Al 2 O 3 3，HfO 2或ZrO 2，例如与氧化铌的组合（铌<子> 2 0 <子> 5 ）。在电流泄漏抑制材料（310）的层中或者作为一个或多个单独的层（320）将Nb 2 O 5或者纳入电介质结构中作为掺杂剂，340）以及电流泄漏抑制材料（310）的层。例如，电介质结构（304）可以用于诸如DRAM器件的集成电路器件的微型电容器。在一些实施例中，在同一ALD处理系统中的电介质结构（304）周围形成一个或多个电容器电极（300,390）。一个或多个电极（300,390）可以包括过渡金属氮化物，贵金属或贵金属合金。

2. 发明申请

WO2004024981A2 PRECURSOR MATERIAL DELIVERY SYSTEM FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的前体物质传送系统
公开(公告)号：WO2004024981A2
公开(公告)日：2004-03-25
申请号：PCT/US2003/028436
申请日：2003-09-10
申请人： PLANAR SYSTEMS, INC. , AITCHISON, Bradley, J. , MAULA, Jarmo , LESKINEN, Hannu , LANG, Teemu , KUOSMANEN, Pekka , HÄRKÖNEN, Kari , SONNINEN, Martti
发明人： AITCHISON, Bradley, J. , MAULA, Jarmo , LESKINEN, Hannu , LANG, Teemu , KUOSMANEN, Pekka , HÄRKÖNEN, Kari , SONNINEN, Martti
IPC分类号： C23C16/44
CPC分类号： B01D45/06 , C23C16/4402 , C23C16/4404 , C23C16/4412 , C23C16/45525 , C23C16/45544 , C23C16/4557 , C30B25/14 , Y10S55/14
摘要： A precursor delivery system (100) includes a flow path (104) from a precursor container (102) to a reaction space (110) of a thin film deposition system, such as an atomic layer deposition reactor. A staging volume (114) is preferably between precursor container (102) and reaction space (110) for receiving at least one dose of precursor material from precursor container (102), from which a series of pulses is released toward reaction space (110). Precursor material is typically vaporized after loading in precursor container (102), by heating or reducing the pressure inside precursor container (102). A vacuum line (156) preferably coupled to precursor container (102) bypasses reaction space (110) for reducing pressure inside precursor container (102) without drawing particles into reaction space (110). A high conductivity particle filter having inertial traps may be included, preferably between precursor container (102) and a staging volume (114), for filtering particles from the precursor material.
摘要翻译：前体输送系统（100）包括从前体容器（102）到薄膜沉积系统的反应空间（110）的流动路径（104），所述薄膜沉积系统例如为原子层沉积反应器。分级体积（114）优选位于前体容器（102）和反应空间（110）之间，用于从前体容器（102）接收至少一个剂量的前体材料，从反应空间（110）释放一系列脉冲，。前体材料通常在加载到前体容器（102）中之后通过加热或减小前体容器（102）内的压力而蒸发。优选地连接至前体容器（102）的真空管线（156）绕过反应空间（110）以减小前体容器（102）内的压力而不将颗粒吸入反应空间（110）中。可以包括具有惯性陷阱的高电导率粒子过滤器，优选地在前体容器（102）和分级体积（114）之间，用于从前体材料过滤粒子。

3. 发明申请

WO2004024981A3 PRECURSOR MATERIAL DELIVERY SYSTEM FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的前体材料输送系统
公开(公告)号：WO2004024981A3
公开(公告)日：2004-07-29
申请号：PCT/US0328436
申请日：2003-09-10
申请人： PLANAR SYSTEMS INC , AITCHISON BRADLEY J , MAULA JARMO , LESKINEN HANNU , LANG TEEMU , KUOSMANEN PEKKA , HAERKOENEN KARI , SONNINEN MARTTI
发明人： AITCHISON BRADLEY J , MAULA JARMO , LESKINEN HANNU , LANG TEEMU , KUOSMANEN PEKKA , HAERKOENEN KARI , SONNINEN MARTTI
IPC分类号： C23C16/44 , C30B25/14 , C23C16/455
CPC分类号： B01D45/06 , C23C16/4402 , C23C16/4404 , C23C16/4412 , C23C16/45525 , C23C16/45544 , C23C16/4557 , C30B25/14 , Y10S55/14
摘要： A precursor delivery system (100) includes a flow path (104) from a precursor container (102) to a reaction space (110) of a thin film deposition system, such as an atomic layer deposition reactor. A staging volume (114) is preferably between precursor container (102) and reaction space (110) for receiving at least one dose of precursor material from precursor container (102), from which a series of pulses is released toward reaction space (110). Precursor material is typically vaporized after loading in precursor container (102), by heating or reducing the pressure inside precursor container (102). A vacuum line (156) preferably coupled to precursor container (102) bypasses reaction space (110) for reducing pressure inside precursor container (102) without drawing particles into reaction space (110). A high conductivity particle filter having inertial traps may be included, preferably between precursor container (102) and a staging volume (114), for filtering particles from the precursor material.
摘要翻译：前体递送系统（100）包括从前体容器（102）到诸如原子层沉积反应器的薄膜沉积系统的反应空间（110）的流动路径（104）。分级体积（114）优选在前体容器（102）和反应空间（110）之间，用于从前体容器（102）接收至少一个剂量的前体材料，从反应空间（110）向其释放一系列脉冲，。前体材料通常在加载到前体容器（102）中之后，通过加热或降低前体容器（102）内部的压力而被蒸发。优选地耦合到前体容器（102）的真空管线（156）绕过反应空间（110），用于减小前体容器（102）内的压力，而不将颗粒吸入反应空间（110）。可以包括具有惯性陷阱的高导电性粒子过滤器，优选在前体容器（102）和分级体积（114）之间，用于过滤来自前体材料的颗粒。

4. 发明申请

WO2005003605A3 DIAPHRAGM VALVE FOR ATOMIC LAYER DEPOSITION 审中-公开
公开(公告)号：WO2005003605A3
公开(公告)日：2005-01-13
申请号：PCT/US2004/020916
申请日：2004-06-28
申请人： PLANAR SYSTEMS, INC. , MAULA, Jarmo, Ilmari , LESKINEN, Hannu , LANG, Teemu , KUOSMANEN, Pekka , HÄRKÖNEN, Kari , AITCHISON, Bradley, J.
发明人： MAULA, Jarmo, Ilmari , LESKINEN, Hannu , LANG, Teemu , KUOSMANEN, Pekka , HÄRKÖNEN, Kari , AITCHISON, Bradley, J.
IPC分类号： F16K49/00
摘要： Diaphragm valves (200) for use in an atomic layer deposition (ALD) system are disclosed. In one embodiment, a heating body (290) forms a thermally conductive pathway between the diaphragm (220) and the valve body (210) to help maintain an operating temperature at the diaphragm and inhibit condensation or freezing of high-temperature ALD precursor gases in the valve passage (214). In another embodiment, a pressure vent (302, 306, 310) communicating with an enclosed space (296) behind the diaphragm reduces resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction (316) is coupled to the pressure vent to reduce fluid pressure in the enclosed space. In yet another embodiment, a valve seat (230) includes an annular seating surface that surrounds an inlet (216) of the valve and contacts a substantial portion of one side of the diaphragm when closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm.

5. 发明申请

WO2005003605A2 DIAPHRAGM VALVE FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的膜片阀
公开(公告)号：WO2005003605A2
公开(公告)日：2005-01-13
申请号：PCT/US2004020916
申请日：2004-06-28
申请人： PLANAR SYSTEMS INC , MAULA JARMO ILMARI , LESKINEN HANNU , LANG TEEMU , KUOSMANEN PEKKA , HAERKOENEN KARI , AITCHISON BRADLEY J
发明人： MAULA JARMO ILMARI , LESKINEN HANNU , LANG TEEMU , KUOSMANEN PEKKA , HAERKOENEN KARI , AITCHISON BRADLEY J
IPC分类号： F16K7/14 , F16K31/06 , F16K49/00 , F16K
CPC分类号： F16K31/0693 , F16K7/14 , F16K49/002
摘要： Diaphragm valves (200) for use in an atomic layer deposition (ALD) system are disclosed. In one embodiment, a heating body (290) forms a thermally conductive pathway between the diaphragm (220) and the valve body (210) to help maintain an operating temperature at the diaphragm and inhibit condensation or freezing of high-temperature ALD precursor gases in the valve passage (214). In another embodiment, a pressure vent (302, 306, 310) communicating with an enclosed space (296) behind the diaphragm reduces resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction (316) is coupled to the pressure vent to reduce fluid pressure in the enclosed space. In yet another embodiment, a valve seat (230) includes an annular seating surface that surrounds an inlet (216) of the valve and contacts a substantial portion of one side of the diaphragm when closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm.
摘要翻译：公开了用于原子层沉积（ALD）系统的隔膜阀（200）。在一个实施例中，加热体（290）在隔膜（220）和阀体（210）之间形成导热通路，以帮助保持隔膜处的工作温度并且抑制高温ALD前体气体的冷凝或冷冻阀通道（214）。在另一个实施例中，与隔膜后面的封闭空间（296）连通的压力通风口（302,306,310）减小了隔膜在打开位置和关闭位置之间的过渡的阻力。在一些实施方案中，泵或其它吸入源（316）联接到压力通风口以减少封闭空间中的流体压力。在另一个实施例中，阀座（230）包括环形座表面，环形座表面围绕阀的入口（216）并且在关闭时与隔膜的一侧的大部分接触，以便于传热并抵消散热隔膜。

6. 发明申请

WO2004042804A3 CAPACITOR FABRICATION METHODS AND CAPACITOR STRUCTURES INCLUDING NIOBIUM OXIDE 审中-公开
标题翻译：电容器制造方法和包括氧化镍的电容器结构
公开(公告)号：WO2004042804A3
公开(公告)日：2004-10-07
申请号：PCT/US0334727
申请日：2003-10-31
申请人： PLANAR SYSTEMS INC , AITCHISON BRADLEY J , PAKKALA ARTO , KUOSMANEN PEKKA , HAERKOENEN KARI
发明人： AITCHISON BRADLEY J , PAKKALA ARTO , KUOSMANEN PEKKA , HAERKOENEN KARI
IPC分类号： H01G4/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/334 , H01L21/8242 , H01L27/108 , H01L29/94
CPC分类号： H01L27/1085 , H01L21/3142 , H01L21/31604 , H01L21/31616 , H01L21/31641 , H01L21/31645 , H01L27/10805 , H01L27/10829 , H01L27/10861 , H01L28/84 , H01L29/66181 , H01L29/945
摘要： A dielectric structure (304) formed on a substrate (300) using a thin film deposition technique such as atomic layer deposition (ALD) includes at least one layer of current leakage inhibiting dielectric material (310), such as Al2O3, HfO2, or ZrO2, for example, in combination with niobium oxide (Nb2O5). The Nb2O5 is either incorporated into the dielectric structure as a dopant in a layer of the current leakage inhibiting material (310) or as one or more separate layers (320, 340) in addition to the layer or layers of current leakage inhibiting material (310). The dielectric structure (304) may be used in miniature capacitors for integrated circuit devices such as DRAM devices, for example. In some embodiments, one or more capacitor electrodes (300, 390) are formed around the dielectric structure (304) in the same ALD processing system. One or more of the electrodes (300, 390) may comprise a transition metal nitride, a noble metal, or a noble metal alloy.
摘要翻译：使用诸如原子层沉积（ALD）的薄膜沉积技术在衬底（300）上形成的电介质结构（304）包括至少一层电流泄漏抑制电介质材料（310），诸如Al 2 O 3，HfO 2或ZrO 2 例如与氧化铌（Nb 2 O 5）组合。除了电流泄漏抑制材料（310）的层或层之外，Nb 2 O 5或者作为电流泄漏抑制材料（310）的层中的掺杂剂或作为一个或多个分离层（320,340）而掺入到电介质结构中）。电介质结构（304）可以用于诸如DRAM器件的集成电路器件的微型电容器中。在一些实施例中，在相同的ALD处理系统中，围绕电介质结构（304）形成一个或多个电容器电极（300,390）。一个或多个电极（300,390）可以包括过渡金属氮化物，贵金属或贵金属合金。

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