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1. 发明申请

WO2004024981A3 PRECURSOR MATERIAL DELIVERY SYSTEM FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的前体材料输送系统
公开(公告)号：WO2004024981A3
公开(公告)日：2004-07-29
申请号：PCT/US0328436
申请日：2003-09-10
申请人： PLANAR SYSTEMS INC , AITCHISON BRADLEY J , MAULA JARMO , LESKINEN HANNU , LANG TEEMU , KUOSMANEN PEKKA , HAERKOENEN KARI , SONNINEN MARTTI
发明人： AITCHISON BRADLEY J , MAULA JARMO , LESKINEN HANNU , LANG TEEMU , KUOSMANEN PEKKA , HAERKOENEN KARI , SONNINEN MARTTI
IPC分类号： C23C16/44 , C30B25/14 , C23C16/455
CPC分类号： B01D45/06 , C23C16/4402 , C23C16/4404 , C23C16/4412 , C23C16/45525 , C23C16/45544 , C23C16/4557 , C30B25/14 , Y10S55/14
摘要： A precursor delivery system (100) includes a flow path (104) from a precursor container (102) to a reaction space (110) of a thin film deposition system, such as an atomic layer deposition reactor. A staging volume (114) is preferably between precursor container (102) and reaction space (110) for receiving at least one dose of precursor material from precursor container (102), from which a series of pulses is released toward reaction space (110). Precursor material is typically vaporized after loading in precursor container (102), by heating or reducing the pressure inside precursor container (102). A vacuum line (156) preferably coupled to precursor container (102) bypasses reaction space (110) for reducing pressure inside precursor container (102) without drawing particles into reaction space (110). A high conductivity particle filter having inertial traps may be included, preferably between precursor container (102) and a staging volume (114), for filtering particles from the precursor material.
摘要翻译：前体递送系统（100）包括从前体容器（102）到诸如原子层沉积反应器的薄膜沉积系统的反应空间（110）的流动路径（104）。分级体积（114）优选在前体容器（102）和反应空间（110）之间，用于从前体容器（102）接收至少一个剂量的前体材料，从反应空间（110）向其释放一系列脉冲，。前体材料通常在加载到前体容器（102）中之后，通过加热或降低前体容器（102）内部的压力而被蒸发。优选地耦合到前体容器（102）的真空管线（156）绕过反应空间（110），用于减小前体容器（102）内的压力，而不将颗粒吸入反应空间（110）。可以包括具有惯性陷阱的高导电性粒子过滤器，优选在前体容器（102）和分级体积（114）之间，用于过滤来自前体材料的颗粒。

2. 发明申请

WO2006064081A1 SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：半导体衬底，半导体器件及制造半导体衬底的方法
公开(公告)号：WO2006064081A1
公开(公告)日：2006-06-22
申请号：PCT/FI2005/000233
申请日：2005-05-19
申请人： OPTOGAN OY , ODNOBLYUDOV, Maxim , BOUGROV, Vladislav , ROMANOV, Alexei , LANG, Teemu
发明人： ODNOBLYUDOV, Maxim , BOUGROV, Vladislav , ROMANOV, Alexei , LANG, Teemu
IPC分类号： H01L21/205
CPC分类号： H01L29/045 , H01L21/0242 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L29/2003
摘要： A semiconductor substrate (1) of the present invention is made of nitrides of group III metals having wurtzite crystal structure and is grown in vapor phase either on a (0001) oriented foreign substrate (2), lattice mismatched to the semiconductor substrate materials, or on existing (0001) oriented highly dislocated layer (3) of the semiconductor substrate materials and has a highly reduced dislocation density. According to the present invention, a structure is utilized for the dislocation density reduction, which comprises a dislocation redirection layer (4) providing intentional inclination of threading dislocations (6) towards high index crystallographic planes having crystallographic indexes other than (0001) and those of the type {1100}, in order to enhance the probability for dislocation reactions; and a dislocation reaction layer (5) positioned above said dislocation layer (4), in which the threading dislocations (6) coalesce with each other resulting in reduced threading dislocation density at the semiconductor substrate surface (7).
摘要翻译：本发明的半导体衬底（1）由具有纤锌矿晶体结构的III族金属的氮化物制成，并且在（0001）取向的异质衬底（2）上的气相中生长，晶格与半导体衬底材料失配，或在半导体衬底材料的现有（0001）取向的高位错层（3）上，并且具有高度降低的位错密度。根据本发明，利用了一种用于位错密度降低的结构，其包括位错重定向层（4），其提供穿透位错（6）有意倾斜于具有（0001）以外的结晶指数的高折射率结晶平面，类型{1100}，以增加错位反应的可能性; 以及位于所述位错层（4）上方的位错反应层（5），其中所述穿透位错（6）彼此结合，导致在半导体衬底表面（7）处的穿透位错密度降低。

3. 发明申请

WO2004024981A2 PRECURSOR MATERIAL DELIVERY SYSTEM FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的前体物质传送系统
公开(公告)号：WO2004024981A2
公开(公告)日：2004-03-25
申请号：PCT/US2003/028436
申请日：2003-09-10
申请人： PLANAR SYSTEMS, INC. , AITCHISON, Bradley, J. , MAULA, Jarmo , LESKINEN, Hannu , LANG, Teemu , KUOSMANEN, Pekka , HÄRKÖNEN, Kari , SONNINEN, Martti
发明人： AITCHISON, Bradley, J. , MAULA, Jarmo , LESKINEN, Hannu , LANG, Teemu , KUOSMANEN, Pekka , HÄRKÖNEN, Kari , SONNINEN, Martti
IPC分类号： C23C16/44
CPC分类号： B01D45/06 , C23C16/4402 , C23C16/4404 , C23C16/4412 , C23C16/45525 , C23C16/45544 , C23C16/4557 , C30B25/14 , Y10S55/14
摘要： A precursor delivery system (100) includes a flow path (104) from a precursor container (102) to a reaction space (110) of a thin film deposition system, such as an atomic layer deposition reactor. A staging volume (114) is preferably between precursor container (102) and reaction space (110) for receiving at least one dose of precursor material from precursor container (102), from which a series of pulses is released toward reaction space (110). Precursor material is typically vaporized after loading in precursor container (102), by heating or reducing the pressure inside precursor container (102). A vacuum line (156) preferably coupled to precursor container (102) bypasses reaction space (110) for reducing pressure inside precursor container (102) without drawing particles into reaction space (110). A high conductivity particle filter having inertial traps may be included, preferably between precursor container (102) and a staging volume (114), for filtering particles from the precursor material.
摘要翻译：前体输送系统（100）包括从前体容器（102）到薄膜沉积系统的反应空间（110）的流动路径（104），所述薄膜沉积系统例如为原子层沉积反应器。分级体积（114）优选位于前体容器（102）和反应空间（110）之间，用于从前体容器（102）接收至少一个剂量的前体材料，从反应空间（110）释放一系列脉冲，。前体材料通常在加载到前体容器（102）中之后通过加热或减小前体容器（102）内的压力而蒸发。优选地连接至前体容器（102）的真空管线（156）绕过反应空间（110）以减小前体容器（102）内的压力而不将颗粒吸入反应空间（110）中。可以包括具有惯性陷阱的高电导率粒子过滤器，优选地在前体容器（102）和分级体积（114）之间，用于从前体材料过滤粒子。

4. 发明申请

WO2005003605A3 DIAPHRAGM VALVE FOR ATOMIC LAYER DEPOSITION 审中-公开
公开(公告)号：WO2005003605A3
公开(公告)日：2005-01-13
申请号：PCT/US2004/020916
申请日：2004-06-28
申请人： PLANAR SYSTEMS, INC. , MAULA, Jarmo, Ilmari , LESKINEN, Hannu , LANG, Teemu , KUOSMANEN, Pekka , HÄRKÖNEN, Kari , AITCHISON, Bradley, J.
发明人： MAULA, Jarmo, Ilmari , LESKINEN, Hannu , LANG, Teemu , KUOSMANEN, Pekka , HÄRKÖNEN, Kari , AITCHISON, Bradley, J.
IPC分类号： F16K49/00
摘要： Diaphragm valves (200) for use in an atomic layer deposition (ALD) system are disclosed. In one embodiment, a heating body (290) forms a thermally conductive pathway between the diaphragm (220) and the valve body (210) to help maintain an operating temperature at the diaphragm and inhibit condensation or freezing of high-temperature ALD precursor gases in the valve passage (214). In another embodiment, a pressure vent (302, 306, 310) communicating with an enclosed space (296) behind the diaphragm reduces resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction (316) is coupled to the pressure vent to reduce fluid pressure in the enclosed space. In yet another embodiment, a valve seat (230) includes an annular seating surface that surrounds an inlet (216) of the valve and contacts a substantial portion of one side of the diaphragm when closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm.

5. 发明申请

WO2005003605A2 DIAPHRAGM VALVE FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的膜片阀
公开(公告)号：WO2005003605A2
公开(公告)日：2005-01-13
申请号：PCT/US2004020916
申请日：2004-06-28
申请人： PLANAR SYSTEMS INC , MAULA JARMO ILMARI , LESKINEN HANNU , LANG TEEMU , KUOSMANEN PEKKA , HAERKOENEN KARI , AITCHISON BRADLEY J
发明人： MAULA JARMO ILMARI , LESKINEN HANNU , LANG TEEMU , KUOSMANEN PEKKA , HAERKOENEN KARI , AITCHISON BRADLEY J
IPC分类号： F16K7/14 , F16K31/06 , F16K49/00 , F16K
CPC分类号： F16K31/0693 , F16K7/14 , F16K49/002
摘要： Diaphragm valves (200) for use in an atomic layer deposition (ALD) system are disclosed. In one embodiment, a heating body (290) forms a thermally conductive pathway between the diaphragm (220) and the valve body (210) to help maintain an operating temperature at the diaphragm and inhibit condensation or freezing of high-temperature ALD precursor gases in the valve passage (214). In another embodiment, a pressure vent (302, 306, 310) communicating with an enclosed space (296) behind the diaphragm reduces resistance to transitioning of the diaphragm between the open and closed positions. In some implementations, a pump or other source of suction (316) is coupled to the pressure vent to reduce fluid pressure in the enclosed space. In yet another embodiment, a valve seat (230) includes an annular seating surface that surrounds an inlet (216) of the valve and contacts a substantial portion of one side of the diaphragm when closed, to facilitate heat transfer and counteract dissipative cooling of the diaphragm.
摘要翻译：公开了用于原子层沉积（ALD）系统的隔膜阀（200）。在一个实施例中，加热体（290）在隔膜（220）和阀体（210）之间形成导热通路，以帮助保持隔膜处的工作温度并且抑制高温ALD前体气体的冷凝或冷冻阀通道（214）。在另一个实施例中，与隔膜后面的封闭空间（296）连通的压力通风口（302,306,310）减小了隔膜在打开位置和关闭位置之间的过渡的阻力。在一些实施方案中，泵或其它吸入源（316）联接到压力通风口以减少封闭空间中的流体压力。在另一个实施例中，阀座（230）包括环形座表面，环形座表面围绕阀的入口（216）并且在关闭时与隔膜的一侧的大部分接触，以便于传热并抵消散热隔膜。

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