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1. 发明申请

WO2012138357A1 NANOPORE SENSING BY LOCAL ELECTRICAL POTENTIAL MEASUREMENT 审中-公开
标题翻译：通过本地电位测量进行纳米感测
公开(公告)号：WO2012138357A1
公开(公告)日：2012-10-11
申请号：PCT/US2011/034426
申请日：2011-04-29
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , LIEBER, Charles, M. , XIE, Ping
发明人： LIEBER, Charles, M. , XIE, Ping
IPC分类号： C12Q1/68 , G01N33/487 , B82Y15/00
CPC分类号： G01N27/447 , B82Y15/00 , B82Y30/00 , C12Q1/6869 , G01N33/48721 , C12Q2565/631
摘要： There is provided a nanopore disposed in a support structure, with a fluidic connection between a first fluidic reservoir and an inlet to the nanopore and a second fluidic connection between a second fluidic reservoir and an outlet from the nanopore. A first ionic solution of a first buffer concentration is disposed in the first reservoir and a second ionic solution of a second buffer concentration, different than the first concentration, is disposed in the second reservoir, with the nanopore providing the sole path of fluidic communication between the first and second reservoirs. An electrical connection is disposed at a location in the nanopore sensor that develops an electrical signal indicative of electrical potential local to at least one site in the nanopore sensor as an object translocates through the nanopore between the two reservoirs.
摘要翻译：提供了一种设置在支撑结构中的纳米孔，在第一流体储存器和纳米孔的入口之间具有流体连接，以及在第二流体储存器和来自纳米孔的出口之间的第二流体连接。将第一缓冲液浓度的第一离子溶液设置在第一储存器中，并且将第二缓冲液浓度与第一浓度不同的第二离子溶液设置在第二储存器中，其中纳米孔提供在第二储存器之间的流体连通的唯一路径第一和第二水库。电连接被设置在纳米孔传感器中的位置处，当物体通过两个储存器之间的纳米孔移位时，该电信号产生指示纳米孔传感器中至少一个位点局部电势的电信号。

2. 发明申请

WO2012033869A1 CONTROLLED SYNTHESIS OF MONOLITHICALLY-INTEGRATED GRAPHENE STRUCTURES 审中-公开
标题翻译：单一组合的石墨结构的控制合成
公开(公告)号：WO2012033869A1
公开(公告)日：2012-03-15
申请号：PCT/US2011/050752
申请日：2011-09-08
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , PARK, Jang-Ung , NAM, SungWoo , LIEBER, Charles, M.
发明人： PARK, Jang-Ung , NAM, SungWoo , LIEBER, Charles, M.
IPC分类号： C01B31/04 , H01L21/336 , H01L29/786 , H01L29/16
CPC分类号： H01L21/02527 , B82Y30/00 , B82Y40/00 , C01B32/186 , H01L21/02381 , H01L21/02488 , H01L21/02491 , H01L21/02494 , H01L21/02502 , H01L21/0262 , H01L21/02645 , H01L21/02664 , H01L23/53276 , H01L29/1606 , H01L29/66477 , H01L29/66742 , H01L29/7781 , H01L29/78618 , H01L29/78684 , H01L2924/0002 , Y10S977/734 , Y10S977/936 , Y10S977/938 , H01L2924/00
摘要： In a method for fabricating a graphene structure, there is formed on a fabrication substrate a pattern of a plurality of distinct graphene catalyst materials. In one graphene synthesis step, different numbers of graphene layers are formed on the catalyst materials in the formed pattern. In a method for fabricating a graphene transistor, on a fabrication substrate at least one graphene catalyst material is provided at a substrate region specified for synthesizing a graphene transistor channel and at least one graphene catalyst material is provided at a substrate region specified for synthesizing a graphene transistor source, and at a substrate region specified for synthesizing a graphene transistor drain. Then in one graphene synthesis step, at least one layer of graphene is formed at the substrate region for the graphene transistor channel, and at the regions for the transistor source and drain there are formed a plurality of layers of graphene.
摘要翻译：在制造石墨烯结构的方法中，在制造衬底上形成多个不同的石墨烯催化剂材料的图案。在一个石墨烯合成步骤中，在所形成的图案中的催化剂材料上形成不同数量的石墨烯层。在制造石墨烯晶体管的方法中，在制造衬底上，在用于合成石墨烯晶体管沟道的衬底区域处提供至少一个石墨烯催化剂材料，并且至少一个石墨烯催化剂材料设置在用于合成石墨烯的基板区域晶体管源，以及在合成石墨烯晶体管漏极所规定的衬底区域。然后在一个石墨烯合成步骤中，在用于石墨烯晶体管沟道的衬底区域上形成至少一层石墨烯，在晶体管源极和漏极的区域形成多层石墨烯。

3. 发明申请

WO2009134291A3 NANOSCALE WIRE-BASED MEMORY DEVICES 审中-公开
标题翻译：基于纳米电路的存储器件
公开(公告)号：WO2009134291A3
公开(公告)日：2010-09-10
申请号：PCT/US2009000337
申请日：2009-01-21
申请人： HARVARD COLLEGE , LIEBER CHARLES M , DONG YAJIE , LU WEI , YU GUIHUA , MCALPINE MICHAEL
发明人： LIEBER CHARLES M , DONG YAJIE , LU WEI , YU GUIHUA , MCALPINE MICHAEL
IPC分类号： H01L27/10 , H01L29/06 , H01L29/16
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/0002 , G11C13/0069 , G11C2213/77 , G11C2213/81 , H01L27/10 , H01L27/101 , H01L29/0673 , H01L29/16 , H01L29/1602 , H01L29/1604 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to nanotechnology and sub- microelectronic devices that can be used in circuitry and, in particular, to nanoscale wires and other nanostructures able to encode data. One aspect of the present invention is directed to a device comprising an electrical crossbar array comprising at least two crossed wires at a cross point. In some cases, at least one of the crossed wires is a nanoscale wire, and in certain instances, at least one of the crossed wires is a nanoscale wire comprising a core and at least one shell surrounding the core. For instance, the core may comprise a crystal (e.g., crystalline silicon) and the shell may be at least partially amorphous (e.g., amorphous silicon). In certain embodiments, the cross point may exhibit intrinsic current rectification, or other electrical behaviors, and the cross point can be used as a memory device. For example, in one embodiment, the cross point may exhibit a first conductance at a positive voltage, and the cross point may exhibit a second conductance at a negative voltage. Accordingly, by applying suitable voltages to the cross point, data may be stored at the cross point. Other aspects of the present invention are directed to systems and methods for making or using such devices, kits involving such devices, or the like.
摘要翻译：本发明一般涉及可用于电路中的纳米技术和亚微电子器件，特别涉及能够对数据进行编码的纳米线和其他纳米结构。本发明的一个方面涉及一种装置，其包括在交叉点处包括至少两根交叉线的电横排阵列。在一些情况下，交叉导线中的至少一个是纳米线，并且在某些情况下，交叉导线中的至少一个是纳米线，其包括芯和围绕芯的至少一个壳。例如，芯可以包括晶体（例如，晶体硅），并且壳可以是至少部分无定形的（例如非晶硅）。在某些实施例中，交叉点可以表现出固有的电流整流或其他电气行为，并且交叉点可以用作存储器件。例如，在一个实施例中，交叉点可以在正电压下呈现第一电导，并且交叉点可以在负电压下显示第二电导。因此，通过向交叉点施加合适的电压，可以在交叉点存储数据。本发明的其他方面涉及用于制造或使用这种装置的系统和方法，涉及这种装置的套件等。

4. 发明申请

WO2009134291A2 NANOSCALE WIRE-BASED MEMORY DEVICES 审中-公开
标题翻译：基于纳米电路的存储器件
公开(公告)号：WO2009134291A2
公开(公告)日：2009-11-05
申请号：PCT/US2009/000337
申请日：2009-01-21
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , LIEBER, Charles, M. , DONG, Yajie , LU, Wei , YU, Guihua , MCALPINE, Michael
发明人： LIEBER, Charles, M. , DONG, Yajie , LU, Wei , YU, Guihua , MCALPINE, Michael
IPC分类号： H01L27/10 , H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/0002 , G11C13/0069 , G11C2213/77 , G11C2213/81 , H01L27/10 , H01L27/101 , H01L29/0673 , H01L29/16 , H01L29/1602 , H01L29/1604 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to nanotechnology and sub- microelectronic devices that can be used in circuitry and, in particular, to nanoscale wires and other nanostructures able to encode data. One aspect of the present invention is directed to a device comprising an electrical crossbar array comprising at least two crossed wires at a cross point. In some cases, at least one of the crossed wires is a nanoscale wire, and in certain instances, at least one of the crossed wires is a nanoscale wire comprising a core and at least one shell surrounding the core. For instance, the core may comprise a crystal (e.g., crystalline silicon) and the shell may be at least partially amorphous (e.g., amorphous silicon). In certain embodiments, the cross point may exhibit intrinsic current rectification, or other electrical behaviors, and the cross point can be used as a memory device. For example, in one embodiment, the cross point may exhibit a first conductance at a positive voltage, and the cross point may exhibit a second conductance at a negative voltage. Accordingly, by applying suitable voltages to the cross point, data may be stored at the cross point. Other aspects of the present invention are directed to systems and methods for making or using such devices, kits involving such devices, or the like.
摘要翻译：本发明一般涉及可用于电路中的纳米技术和亚微电子器件，特别涉及能够对数据进行编码的纳米线和其他纳米结构。本发明的一个方面涉及一种装置，其包括在交叉点处包括至少两根交叉线的电横排阵列。在一些情况下，交叉导线中的至少一个是纳米线，并且在某些情况下，交叉导线中的至少一个是纳米线，其包括芯和围绕芯的至少一个壳。例如，芯可以包括晶体（例如，晶体硅），并且壳可以是至少部分无定形的（例如非晶硅）。在某些实施例中，交叉点可以表现出固有的电流整流或其他电气行为，并且交叉点可以用作存储器件。例如，在一个实施例中，交叉点可以在正电压下呈现第一电导，并且交叉点可以在负电压下显示第二电导。因此，通过向交叉点施加合适的电压，可以在交叉点存储数据。本发明的其他方面涉及用于制造或使用这种装置的系统和方法，涉及这种装置的套件等。

5. 发明申请

WO2007145701A2 NANOSCALE WIRE METHODS AND DEVICES 审中-公开
标题翻译：纳米线方法和器件
公开(公告)号：WO2007145701A2
公开(公告)日：2007-12-21
申请号：PCT/US2007/008540
申请日：2007-04-06
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , NAM, Sung, Woo , JAVEY, Ali , LIEBER, Charles, M.
发明人： NAM, Sung, Woo , JAVEY, Ali , LIEBER, Charles, M.
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L29/1606 , H01L29/7781 , H01L29/78
摘要： The present invention generally relates to nanoscale wire methods and devices, including systems and methods for positioning nanoscale wires on a surface, and articles made therefrom. One aspect of the invention is generally directed to aligned nanoscale wires on a surface of a substrate, and systems and methods of positioning such nanoscale wires on the surface. In one set of embodiments, a first substrate is provided having a plurality of nanoscale wires, and at least some of the nanoscale wires are transferred to a second substrate by contacting at least some of the nanoscale wires with the second substrate, e.g., by moving or "sliding" the substrates relative to each other, in some cases causing alignment of the nanoscale wires on the second substrate. Another aspect of the invention is generally directed to electrical devices comprising a number of planes defined by nanoscale wires, e.g., in a "stacked" configuration. Yet other aspects of the invention are directed to nanoscale wires that can be used as sensors, e.g., in such devices. Still other aspects of the invention are directed to systems and methods for making and using such devices, kits involving the same, and the like.
摘要翻译：本发明一般涉及纳米线材的方法和装置，包括用于在表面上定位纳米尺度线的系统和方法，以及由其制成的制品。本发明的一个方面通常涉及衬底表面上的对准的纳米尺度线，以及将这种纳米级线定位在表面上的系统和方法。在一组实施例中，提供具有多个纳米尺寸线的第一衬底，并且通过使至少一些纳米级导线与第二衬底接触，例如通过移动而将至少一些纳米级导线转移到第二衬底或者使基板相对于彼此“滑动”，在一些情况下引起第二基板上的纳米线的对准。本发明的另一方面通常涉及包括由纳米尺度线限定的多个平面（例如，“堆叠”）构造的电气装置。本发明的其它方面涉及可用作例如在这种装置中的传感器的纳米级线。本发明的其它方面涉及用于制造和使用这些装置的系统和方法，涉及其的套件等。

6. 发明申请

WO2007044034A3 NANOSCALE WIRE-BASED DATA STORAGE 审中-公开
标题翻译：基于NANOSCALE WIRE的数据存储
公开(公告)号：WO2007044034A3
公开(公告)日：2007-09-13
申请号：PCT/US2005044212
申请日：2005-12-06
申请人： HARVARD COLLEGE , LIEBER CHARLES M , WU YUE , YAN HAO
发明人： LIEBER CHARLES M , WU YUE , YAN HAO
IPC分类号： G11C11/22 , H01L29/78
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , G11C11/22 , G11C11/223 , G11C11/54 , G11C11/56 , G11C11/5657 , G11C13/003 , G11C13/025 , G11C2213/16 , G11C2213/17 , G11C2213/18 , G11C2213/75 , G11C2213/77 , H01L29/0673 , H01L29/068 , H01L29/78391
摘要： The present invention generally relates to nanotechnology and submicroelectronic devices that can be used in circuitry and, in some cases, to nanoscale wires and other nanostructures able to encode data. One aspect of the invention provides a nanoscale wire or other nanostructure having a region that is electrically-polarizable, for example, a nanoscale wire may comprise a core and an electrically-polarizable shell. In some cases, the electrically-polarizable region is able to retain its polarization state in the absence of an external electric field. All, or only a portion, of the electricallypolarizable region may be polarized, for example, to encode one or more bits of data. In one set of embodiments, the electrically-polarizable region comprises a functional oxide or a ferroelectric oxide material, for example, BaTiO 3 , lead zirconium titanate, or the like. In some embodiments, the nanoscale wire (or other nanostructure) may further comprise other materials, for example, a separation region separating the electricallypolarizable region from other regions of the nanoscale wire. For example, in a nanoscale wire, one or more intermediate shells may separate the core from the electricallypolarizable shell.
摘要翻译：本发明一般涉及纳米技术和亚微米电子器件，其可用于电路中，并且在一些情况下可用于能够对数据进行编码的纳米线和其他纳米结构。本发明的一个方面提供了具有可电极化的区域的纳米级线或其它纳米结构，例如，纳米线可以包括芯和电可极化的壳。在一些情况下，电极化区域能够在没有外部电场的情况下保持其极化状态。可电极化区域的全部或仅一部分可以被极化，例如编码一个或多个数据位。在一组实施方案中，电极化区域包括功能性氧化物或铁电氧化物材料，例如BaTiO 3，钛酸铅锆等。在一些实施例中，纳米线（或其他纳米结构）可以进一步包括其它材料，例如将电极化区域与纳米尺度线的其它区域分开的分离区域。例如，在纳米尺度的线中，一个或多个中间壳可以将芯与电极化的壳分开。

7. 发明申请

WO2004061859A3 STOCHASTIC ASSEMBLY OF SUBLITHOGRAPHIC NANOSCALE INTERFACES 审中-公开
标题翻译：分层纳米结构界面的组装
公开(公告)号：WO2004061859A3
公开(公告)日：2005-02-03
申请号：PCT/US0323198
申请日：2003-07-24
申请人： CALIFORNIA INST OF TECHN , HARVARD COLLEGE , STANFORD RES INST INT , UNIV BROWN , DEHON ANDRE , LIEBER CHARLES M , LINCOLN PATRICK D , SAVAGE JOHN
发明人： DEHON ANDRE , LIEBER CHARLES M , LINCOLN PATRICK D , SAVAGE JOHN
IPC分类号： G11C13/00 , G11C8/10 , G11C13/02 , H01L21/3205 , H01L23/52 , H01L23/522 , H01L27/10 , H01L29/06 , H01L49/00
CPC分类号： H01L49/00 , B82Y10/00 , G11C8/10 , G11C13/0023 , G11C13/02 , G11C13/025 , G11C2213/71 , G11C2213/77 , G11C2213/81 , H01L23/522 , H01L27/101 , H01L29/0665 , H01L29/0673 , H01L2924/0002 , Y10S977/762 , Y10S977/943 , H01L2924/00
摘要： A method for controlling electric conduction on nanoscale wires is disclosed.The nanoscale wires are provided with controllable regions axially and/or radially distributed. Controlling those regions by means of microscale wires or additional nanoscale wires allows or prevents electric conduction on the controlled nanoscale wires. The controllable regions are of two different types.For example, a first type of controllable region can exhibit a different dopingfrom a second type of controllable region. The method allows one or more of a set of nanoscale wires, packed at sublithographic pitch, to be independentlyselected.
摘要翻译：公开了一种用于控制纳米尺寸导线上的导电的方法。纳米尺寸线材设有轴向和/或径向分布的可控区域。通过微细线或额外的纳米线控制这些区域可以允许或防止受控纳米尺寸导线上的电导。可控区域具有两种不同类型。例如，第一类型的可控区域可以表现出与第二类型可控区域不同的掺杂。该方法允许独立地选择以亚光刻间距包装的一组纳米级线。

8. 发明申请

WO2003053851A3 TRANSITION METAL OXIDE NANOWIRES 审中-公开
公开(公告)号：WO2003053851A3
公开(公告)日：2003-07-03
申请号：PCT/US2002/023062
申请日：2002-07-22
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , PARK, Hongkun , LIEBER, Charles, M. , URBAN, Jeffrey, J. , YUN, Wan, Soo , GU, Qian
发明人： PARK, Hongkun , LIEBER, Charles, M. , URBAN, Jeffrey, J. , YUN, Wan, Soo , GU, Qian
IPC分类号： C01B13/18
摘要： Nanowires are disclosed which comprise transition metal oxides. The transition metal oxides may include oxides of group II, group III, group IV and lanthanide metals. Also disclosed are methods for making nanowires which comprise injecting decomposition agents into a solution comprising solvents and metallic alkoxide or metallic salt precursors.

9. 发明申请

WO2012170630A3 NANOSCALE WIRES, NANOSCALE WIRE FET DEVICES, AND NANOTUBE-ELECTRONIC HYBRID DEVICES FOR SENSING AND OTHER APPLICATIONS 审中-公开
公开(公告)号：WO2012170630A3
公开(公告)日：2012-12-13
申请号：PCT/US2012/041253
申请日：2012-06-07
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , LIEBER, Charles, M. , DUAN, Xiaojie , GAO, Ruixuan , XIE, Ping , JIANG, Xiaocheng
发明人： LIEBER, Charles, M. , DUAN, Xiaojie , GAO, Ruixuan , XIE, Ping , JIANG, Xiaocheng
IPC分类号： H01L29/78 , H01L21/336
摘要： The present invention generally relates to nanotechnology, including field effect transistors and other devices used as sensors (for example, for electrophysiological studies), nanotube structures, and applications. Certain aspects of the present invention are generally directed to transistors such as field effect transistors, and other similar devices. In one set of embodiments, a field effect transistor is used where a nanoscale wire, for example, a silicon nanowire, acts as a transistor channel connecting a source electrode to a drain electrode. In some cases, a portion of the transistor channel is exposed to an environment that is to be determined, for example, the interior or cytosol of a cell. A nanotube or other suitable fluidic channel may be extended from the transistor channel into a suitable environment, such as a contained environment within a cell, so that the environment is in electrical communication with the transistor channel via the fluidic channel. In some embodiments, the rest of the transistor channel may be coated, e.g., so that the electrical properties of the transistor channel reflect the electrical behavior of the environment that the fluidic channel is in communication with. Other aspects of the invention are generally directed to methods of making such sensors, methods of using such sensors, kits involving such sensors, or the like.

10. 发明申请

WO2011038228A1 BENT NANOWIRES AND RELATED PROBING OF SPECIES 审中-公开
标题翻译： BENT NANOWIRES和相关物种的探索
公开(公告)号：WO2011038228A1
公开(公告)日：2011-03-31
申请号：PCT/US2010/050199
申请日：2010-09-24
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , TIAN, Bozhi , XIE, Ping , KEMPA, Thomas, J. , LIEBER, Charles, M. , COHEN-KARNI, Tzahi , QING, Quan , DUAN, Xiaojie
发明人： TIAN, Bozhi , XIE, Ping , KEMPA, Thomas, J. , LIEBER, Charles, M. , COHEN-KARNI, Tzahi , QING, Quan , DUAN, Xiaojie
IPC分类号： G01N33/487 , H01L29/06
CPC分类号： G01N27/4146 , B82Y10/00 , B82Y15/00 , G01N33/48728 , H01L21/02603 , H01L29/045 , H01L29/0665 , H01L29/0669 , H01L51/0048
摘要： Kinked nanowires are used for measuring electrical potentials inside simple cells. An improved intracellular entrance is achieved by modifying the kinked nanowires with phospholipids.
摘要翻译：扭曲的纳米线用于测量简单电池内的电位。改进的细胞内入口通过用磷脂修饰扭结的纳米线来实现。

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