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1. 发明申请

WO2009134291A3 NANOSCALE WIRE-BASED MEMORY DEVICES 审中-公开
标题翻译：基于纳米电路的存储器件
公开(公告)号：WO2009134291A3
公开(公告)日：2010-09-10
申请号：PCT/US2009000337
申请日：2009-01-21
申请人： HARVARD COLLEGE , LIEBER CHARLES M , DONG YAJIE , LU WEI , YU GUIHUA , MCALPINE MICHAEL
发明人： LIEBER CHARLES M , DONG YAJIE , LU WEI , YU GUIHUA , MCALPINE MICHAEL
IPC分类号： H01L27/10 , H01L29/06 , H01L29/16
CPC分类号： H01L29/0665 , B82Y10/00 , G11C13/0002 , G11C13/0069 , G11C2213/77 , G11C2213/81 , H01L27/10 , H01L27/101 , H01L29/0673 , H01L29/16 , H01L29/1602 , H01L29/1604 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to nanotechnology and sub- microelectronic devices that can be used in circuitry and, in particular, to nanoscale wires and other nanostructures able to encode data. One aspect of the present invention is directed to a device comprising an electrical crossbar array comprising at least two crossed wires at a cross point. In some cases, at least one of the crossed wires is a nanoscale wire, and in certain instances, at least one of the crossed wires is a nanoscale wire comprising a core and at least one shell surrounding the core. For instance, the core may comprise a crystal (e.g., crystalline silicon) and the shell may be at least partially amorphous (e.g., amorphous silicon). In certain embodiments, the cross point may exhibit intrinsic current rectification, or other electrical behaviors, and the cross point can be used as a memory device. For example, in one embodiment, the cross point may exhibit a first conductance at a positive voltage, and the cross point may exhibit a second conductance at a negative voltage. Accordingly, by applying suitable voltages to the cross point, data may be stored at the cross point. Other aspects of the present invention are directed to systems and methods for making or using such devices, kits involving such devices, or the like.
摘要翻译：本发明一般涉及可用于电路中的纳米技术和亚微电子器件，特别涉及能够对数据进行编码的纳米线和其他纳米结构。本发明的一个方面涉及一种装置，其包括在交叉点处包括至少两根交叉线的电横排阵列。在一些情况下，交叉导线中的至少一个是纳米线，并且在某些情况下，交叉导线中的至少一个是纳米线，其包括芯和围绕芯的至少一个壳。例如，芯可以包括晶体（例如，晶体硅），并且壳可以是至少部分无定形的（例如非晶硅）。在某些实施例中，交叉点可以表现出固有的电流整流或其他电气行为，并且交叉点可以用作存储器件。例如，在一个实施例中，交叉点可以在正电压下呈现第一电导，并且交叉点可以在负电压下显示第二电导。因此，通过向交叉点施加合适的电压，可以在交叉点存储数据。本发明的其他方面涉及用于制造或使用这种装置的系统和方法，涉及这种装置的套件等。

2. 发明申请

WO2008027078A2 NANOBIOELECTRONICS 审中-公开
公开(公告)号：WO2008027078A2
公开(公告)日：2008-03-06
申请号：PCT/US2007006545
申请日：2007-03-15
申请人： HARVARD COLLEGE , PATOLSKY FERNANDO , TIMKO BRIAN P , YU GUIHUA , LIEBER CHARLES M
发明人： PATOLSKY FERNANDO , TIMKO BRIAN P , YU GUIHUA , LIEBER CHARLES M
CPC分类号： G01N33/5058 , B82Y10/00 , H01L29/0665 , H01L29/0673 , H01L29/1606
摘要： The present invention generally relates to nanobioelectronics and, in some cases, to circuits comprising nanoelectronic elements, such as nanotubes and/or nanowires, and biological components, such as neurons. In one aspect, cells, such as neurons, are positioned in electrical communication with one or more nanoscale wires. The nanoscale wires may be used to stimulate the cells, and/or determine an electrical condition of the cells. More than one nanoscale wire may be positioned in electrical communication with the cell, for example, in distinct regions of the cell. However, the nanoscale wires may be positioned such that they are relatively close together, for example, spaced apart by no more than about 200 nm. The nanoscale wires may be disposed on a substrate, for example, between electrodes, and the cells may be adhered to the substrate, for example, using cell adhesion factors such as polylysine. Also provided in other aspects of the invention are methods for making and using such devices, kits for using the same, and the like.
摘要翻译：本发明一般涉及纳米生物电子学，并且在一些情况下涉及包含纳米电子元件（例如纳米管和/或纳米线）和生物组分（例如神经元）的电路。在一个方面，诸如神经元的细胞被定位成与一个或多个纳米级导线电连通。纳米级线可用于刺激细胞，和/或确定细胞的电状况。例如，在电池的不同区域中，可以放置多于一根的纳米级电线与电池电连通。然而，纳米级线材可以定位成使得它们相对靠近在一起，例如间隔不超过约200nm。纳米级线可以设置在例如电极之间的基板上，并且例如可以使用细胞粘附因子例如聚赖氨酸将细胞粘附到基板。在本发明的其他方面也提供了制造和使用这种装置的方法，使用它们的试剂盒等。

3. 发明申请

WO2007084114A3 SYSTEM AND METHOD FOR PROCESSING NANOWIRES WITH HOLOGRAPHIC OPTICAL TWEEZERS 审中-公开
标题翻译：用全息光学镊子处理纳米线的系统和方法
公开(公告)号：WO2007084114A3
公开(公告)日：2007-12-13
申请号：PCT/US2006000946
申请日：2006-01-11
申请人： UNIV NEW YORK , UNIV HARVARD , GRIER DAVID G , AGARWAL RITESH , YU GUIHUA , LIEBER CHARLES M , LADAVAC KOSTA , ROICHMAN YAEL
发明人： GRIER DAVID G , AGARWAL RITESH , YU GUIHUA , LIEBER CHARLES M , LADAVAC KOSTA , ROICHMAN YAEL
IPC分类号： B82B3/00 , G03H1/08 , G21K1/00 , H05H3/04
CPC分类号： B82B3/00 , B82Y10/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C23C14/3407 , G03H1/2294 , G03H2001/0077 , G03H2210/30 , H01J37/3423 , H01L51/0002 , H01L51/0048 , H01L51/0052
摘要： A system and method for manipulating and processing nanowires in solution with arrays of holographic optical traps. The system and method of the present invention is capable of creating hundreds of individually controlled optical traps with the ability to manipulate objects in three dimensions. Individual nanowires with cross-sections as small as 20 nm and lengths exceeding 20 µm are capable of being isolated, translated, rotated and deposited onto a substrate with holographic optical trap arrays under conditions where single traps have no discernible influence. Spatially localized photothermal and photochemical processes induced by the well-focused traps can also be used to melt localized domains on individual nanowires and to fuse nanowire junctions.
摘要翻译：用全息光阱阵列处理和处理溶液中纳米线的系统和方法。本发明的系统和方法能够创建数百个单独控制的光阱，并具有三维操纵物体的能力。横截面小至20纳米且长度超过20微米的单个纳米线能够在单个陷阱没有可察觉的影响的情况下被隔离，平移，旋转并沉积到具有全息光阱阵列的基板上。由聚焦阱诱发的空间局部光热和光化学过程也可用于熔化单个纳米线上的局部区域并融合纳米线结。

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