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1. 发明申请

WO2009151665A3 METHODS AND DEVICES FOR PROCESSING A PRECURSOR LAYER IN A GROUP VIA ENVIRONMENT 审中-公开
标题翻译：用于通过环境加工前驱层的方法和装置
公开(公告)号：WO2009151665A3
公开(公告)日：2010-03-04
申请号：PCT/US2009036083
申请日：2009-03-04
申请人： BOLLMAN BRENT , LEIDHOLM CRAIG R , STANLEY NATHANIEL , RAIL MATTHEW
发明人： BOLLMAN BRENT , LEIDHOLM CRAIG R , STANLEY NATHANIEL , RAIL MATTHEW
IPC分类号： H01L31/042 , H01L21/20 , H01L21/324
CPC分类号： H01L21/02614 , H01L21/02568 , H01L21/02601 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA- chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in one or more steps in a VIA environment.
摘要翻译：公开了用于形成IB-III族 - 硫族化合物化合物的膜的前体材料的高通量印刷的方法和装置。在一个实施方案中，该方法包括在基底上形成前体层，随后在VIA环境中以一个或多个步骤处理前体。

2. 发明申请

WO2009076322A3 METHODS AND DEVICES FOR PROCESSING A PRECURSOR LAYER IN A GROUP VIA ENVIRONMENT 审中-公开
标题翻译：通过环境处理组中前驱层的方法和装置
公开(公告)号：WO2009076322A3
公开(公告)日：2009-09-11
申请号：PCT/US2008085987
申请日：2008-12-08
申请人： LEIDHOLM CRAIG , BOLLMAN BRENT
发明人： LEIDHOLM CRAIG , BOLLMAN BRENT
IPC分类号： H01L31/042
CPC分类号： H01L31/18 , B22F2998/00 , B32B15/01 , B32B15/017 , B82Y30/00 , C22C9/00 , H01L21/02425 , H01L21/02568 , H01L21/02573 , H01L21/02601 , H01L21/02614 , H01L21/02628 , H01L31/0322 , H01L31/0749 , Y02E10/541 , B22F1/0018 , B22F1/02
摘要： Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA-chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in a VIA environment.
摘要翻译：公开了用于形成IB-IIIA族硫族化合物膜的前体材料的高通量印刷的方法和装置。在一个实施例中，该方法包括在衬底上形成前体层，随后在VIA环境中处理该前体。

3. 发明申请

WO2008121997A2 FORMATION OF PHOTOVOLTAIC ABSORBER LAYERS ON FOIL SUBSTRATES 审中-公开
标题翻译：在箔基底上形成光伏吸收层
公开(公告)号：WO2008121997A2
公开(公告)日：2008-10-09
申请号：PCT/US2008/058961
申请日：2008-03-31
申请人： LEIDHOLM, Craig , BOLLMAN, Brent , ROUSSILLON, Yann
发明人： LEIDHOLM, Craig , BOLLMAN, Brent , ROUSSILLON, Yann
IPC分类号： H01L31/04
CPC分类号： H01L31/18 , H01L31/0322 , H01L31/03928 , Y02E10/541
摘要： An absorber layer of a photovoltaic device may be formed on an aluminum or metallized polymer foil substrate. A nascent absorber layer containing one or more elements of group IB and one or more elements of group IIIA is formed on the substrate. The nascent absorber layer and/or substrate is then rapidly heated from an ambient temperature to an average plateau temperature range of between about 200ºC and about 600ºC and maintained in the average plateau temperature range 1 to 30 minutes after which the temperature is reduced.
摘要翻译：光电器件的吸收层可以形成在铝或金属化的聚合物箔基底上。在衬底上形成包含组IB的一种或多种元素和一组或多种IIIA族元素的初生吸收层。然后将新生吸收剂层和/或基材从环境温度快速加热至约200℃至约600℃的平均平台温度范围，并保持在平均平台温度范围1至30分钟，之后温度降低。

4. 发明申请

WO2007101138A2 HIGH-THROUGHPUT PRINTING OF SEMICONDUCTOR PRECURSOR LAYER FROM INTER-METALLIC NANOFLAKE PARTICLES 审中-公开
标题翻译：来自金属间纳米颗粒的半导体前驱层的高通量印刷
公开(公告)号：WO2007101138A2
公开(公告)日：2007-09-07
申请号：PCT/US2007062766
申请日：2007-02-23
申请人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
发明人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
CPC分类号： H01L31/06 , B82Y30/00 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , C23C18/1283 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, , form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. . In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
摘要翻译：提供了用于在合适的条件下在合适的载体中转化非平面或平面前体材料的方法和装置，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在选择性力沉降之后。特别地，平面颗粒更容易分散，形成更密集的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。这些平面颗粒可以是具有高纵横比的纳米片。由纳米片形成的致密膜特别适用于形成光电器件。。在一个实施方案中，油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族金属间合金相的金属间薄片（微花纹或纳米薄片）。

5. 发明申请

WO2009151665A2 METHODS AND DEVICES FOR PROCESSING A PRECURSOR LAYER IN A GROUP VIA ENVIRONMENT 审中-公开
标题翻译：用于通过环境加工前驱层的方法和装置
公开(公告)号：WO2009151665A2
公开(公告)日：2009-12-17
申请号：PCT/US2009/036083
申请日：2009-03-04
申请人： BOLLMAN, Brent , LEIDHOLM, Craig, R. , STANLEY, Nathaniel , RAIL, Matthew
发明人： BOLLMAN, Brent , LEIDHOLM, Craig, R. , STANLEY, Nathaniel , RAIL, Matthew
IPC分类号： H01L31/042 , H01L21/20 , H01L21/324
CPC分类号： H01L21/02614 , H01L21/02568 , H01L21/02601 , H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA- chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, the precursor is subsequently processed in one or more steps in a VIA environment.
摘要翻译：公开了用于形成IB-III族 - 硫族化合物化合物的膜的前体材料的高通量印刷的方法和装置。在一个实施方案中，该方法包括在基底上形成前体层，随后在VIA环境中以一个或多个步骤处理前体。

6. 发明申请

WO2009120340A1 IMPROVED JUNCTIONS IN SUBSTRATE SOLAR CELLS 审中-公开
标题翻译：在底层太阳能电池中改善连接
公开(公告)号：WO2009120340A1
公开(公告)日：2009-10-01
申请号：PCT/US2009/001874
申请日：2009-03-24
申请人： SOLEXANT CORP. , PAULSON, Puthur , HOTZ, Charlie , LEIDHOLM, Craig , REDDY, Damoder
发明人： PAULSON, Puthur , HOTZ, Charlie , LEIDHOLM, Craig , REDDY, Damoder
IPC分类号： C23C14/34 , H01L31/18
CPC分类号： H01L31/1836 , C23C14/0629 , C23C14/24 , C23C14/54 , C23C14/562 , H01L31/073 , Y02E10/543 , Y02P70/521
摘要： The present invention discloses thin film photovoltaic devices comprising Group II- VI semiconductor layers with a substrate configuration having an interface layer between the absorber layer and the window layer to create improved junctions. The present invention also discloses methods for making and surface treatments for thin film photovoltaic devices comprising Group II-VI semiconductor layers with a substrate configuration to create devices with improved junctions.
摘要翻译：本发明公开了包括II-VI族半导体层的薄膜光伏器件，衬底结构具有在吸收层和窗口层之间的界面层，以产生改善的结。本发明还公开了用于制造和表面处理薄膜光伏器件的方法，该器件包括具有衬底配置的II-VI族半导体层以产生具有改进结的器件。

7. 发明申请

WO2009051862A2 SEMICONDUCTOR THIN FILMS FORMED FROM NON-SPHERICAL PARTICLES 审中-公开
标题翻译：从非球形颗粒形成的半导体薄膜
公开(公告)号：WO2009051862A2
公开(公告)日：2009-04-23
申请号：PCT/US2008/067569
申请日：2008-06-19
申请人： VAN DUREN, Jeroen, K.J. , ROBINSON, Matthew, R. , LEIDHOLM, Craig, R. , SAGER, Brian, M.
发明人： VAN DUREN, Jeroen, K.J. , ROBINSON, Matthew, R. , LEIDHOLM, Craig, R. , SAGER, Brian, M.
IPC分类号： H01L31/042 , H01L21/36
CPC分类号： H01L31/1864 , C23C18/08 , C23C18/1204 , C23C18/1275 , C23C18/1287 , H01L21/02565 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/0322 , H01L31/0352 , H01L31/04 , H01L31/1876 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily,, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
摘要翻译：提供了用于在合适的条件下在合适的载体中转化非平面或平面前体材料的方法和装置，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在选择性力沉降之后。特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。这些平面颗粒可以是具有高纵横比的纳米片。由纳米片形成的致密膜特别适用于形成光电器件。在一个实施例中，油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族的金属间片状微粒（微花纹或纳米薄片）金属间合金相。

8. 发明申请

WO2005081789A2 FORMATION OF CIGS ABSORBER LAYER MATERIALS USING ATOMIC LAYER DEPOSITION AND HIGH THROUGHPUT SURFACE TREATMENT 审中-公开
标题翻译：使用原子层沉积和高通量表面处理形成CIGS吸收层材料
公开(公告)号：WO2005081789A2
公开(公告)日：2005-09-09
申请号：PCT/US2005/003748
申请日：2005-02-07
申请人： NANOSOLAR, INC. , SAGER, Brian, M. , ROSCHEISEN, Martin, R. , LEIDHOLM, Craig
发明人： SAGER, Brian, M. , ROSCHEISEN, Martin, R. , LEIDHOLM, Craig
摘要： An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions.
摘要翻译：可以使用原子层沉积反应在衬底上形成吸收层。包含IB，IIIA和VIB族元素的吸收层可以通过将基底放置在处理室中并且将IB族元素和/或一种或多种IIIA族元素从单独的源原子层沉积到基底上形成，以形成一个电影。然后将VIA族元素并入膜中并退火以形成吸收层。吸收层可以大于约25nm厚。衬底可以被卷绕成一个或多个线圈，使得线圈的相邻匝不彼此接触。卷绕的基板可以放置在处理室中，其中可以通过原子层沉积工艺来处理一个或多个卷绕的基板的基本上整个表面。可以通过使用一个或多个自限制反应的原子层沉积以化学计量控制的比例将一个或多个IB族元素和/或一个或多个IIIA族元素沉积到基底上。

9. 发明申请

WO2008128122A2 FORMATION OF PHOTOVOLTAIC ABSORBER LAYERS ON FOIL SUBSTRATES 审中-公开
标题翻译：在铁基底上形成光伏吸收层
公开(公告)号：WO2008128122A2
公开(公告)日：2008-10-23
申请号：PCT/US2008060141
申请日：2008-04-11
申请人： LEIDHOLM CRAIG , BOLLMAN BRENT , ROUSSILLON YANN
发明人： LEIDHOLM CRAIG , BOLLMAN BRENT , ROUSSILLON YANN
IPC分类号： H01L31/04 , H01L21/324 , H01L31/042
CPC分类号： H01L31/0322 , Y02E10/541
摘要： An absorber layer of a photovoltaic device may be formed on an aluminum or metallized polymer foil substrate. A nascent absorber layer containing one or more elements of group IB and one or more elements of group IIIA is formed on the substrate. The nascent absorber layer and/or substrate is then rapidly heated from an ambient temperature to an average plateau temperature range of between about 200°C and about 600°C and maintained in the average plateau temperature range 1 to 30 minutes after which the temperature is reduced.
摘要翻译：光伏器件的吸收层可以形成在铝或金属化聚合物箔基底上。包含一种或多种IB族元素和一种或多种IIIA族元素的新生吸收层形成在基底上。然后将新生吸收层和/或基材从环境温度快速加热到约200℃至约600℃的平均平台温度范围，并保持平均平台温度范围1-30分钟，此后温度为降低。

10. 发明申请

WO2007101136A3 HIGH-THROUGHPUT FORMATION OF SEMICONDUCTOR LAYER BY USE OF CHALCOGEN AND INTER-METALLIC MATERIAL 审中-公开
标题翻译：通过使用CHALCOGEN和金属间材料形成半导体层的高通量
公开(公告)号：WO2007101136A3
公开(公告)日：2008-03-06
申请号：PCT/US2007062764
申请日：2007-02-23
申请人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
发明人： VAN DUREN JEROEN K J , LEIDHOLM CRAIG R , ROBINSON MATTHEW R
IPC分类号： B05D3/00 , H01L31/032 , H01L31/0336
CPC分类号： H01L31/0322 , C22C1/002 , H01L31/06 , H01L31/0749 , H01L31/18 , H01L31/1876 , Y02E10/541 , Y02P70/521
摘要： A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and/or group IDA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen- free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature.
摘要翻译：公开了一种通过使用含硫属原子的蒸气形成半导体前体层的高通量方法。在一个实施方案中，该方法包括形成包含任何形状的组IB和/或组IDA颗粒的前体材料。该方法可以包括在衬底的表面上形成前体材料的前体层。该方法还可以包括将基本上无氧的硫属元素气氛中的颗粒前体材料加热到足以使颗粒反应并从硫族化物颗粒中释放硫属元素的处理温度，其中硫族元素呈现液体形式并用作助熔剂以改善元素的混合以期望的化学计量比形成IB-IIIA族硫族化合物膜。硫属化合物气氛可以在处理温度下提供大于或等于前体层中液态硫属元素的蒸气压的分压。

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