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1. 发明申请

WO2005081789A2 FORMATION OF CIGS ABSORBER LAYER MATERIALS USING ATOMIC LAYER DEPOSITION AND HIGH THROUGHPUT SURFACE TREATMENT 审中-公开
标题翻译：使用原子层沉积和高通量表面处理形成CIGS吸收层材料
公开(公告)号：WO2005081789A2
公开(公告)日：2005-09-09
申请号：PCT/US2005/003748
申请日：2005-02-07
申请人： NANOSOLAR, INC. , SAGER, Brian, M. , ROSCHEISEN, Martin, R. , LEIDHOLM, Craig
发明人： SAGER, Brian, M. , ROSCHEISEN, Martin, R. , LEIDHOLM, Craig
摘要： An absorber layer may be formed on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions.
摘要翻译：可以使用原子层沉积反应在衬底上形成吸收层。包含IB，IIIA和VIB族元素的吸收层可以通过将基底放置在处理室中并且将IB族元素和/或一种或多种IIIA族元素从单独的源原子层沉积到基底上形成，以形成一个电影。然后将VIA族元素并入膜中并退火以形成吸收层。吸收层可以大于约25nm厚。衬底可以被卷绕成一个或多个线圈，使得线圈的相邻匝不彼此接触。卷绕的基板可以放置在处理室中，其中可以通过原子层沉积工艺来处理一个或多个卷绕的基板的基本上整个表面。可以通过使用一个或多个自限制反应的原子层沉积以化学计量控制的比例将一个或多个IB族元素和/或一个或多个IIIA族元素沉积到基底上。

2. 发明申请

WO2006073437A3 PHOTOVOLTAIC THIN-FILM CELL PRODUCED FROM METALLIC BLEND USING HIGH-TEMPERATURE PRINTING 审中-公开
公开(公告)号：WO2006073437A3
公开(公告)日：2006-07-13
申请号：PCT/US2005/013932
申请日：2005-04-22
申请人： NANOSOLAR, INC. , ROSCHEISEN, Martin, R. , SAGER, Brian, M.
发明人： ROSCHEISEN, Martin, R. , SAGER, Brian, M.
IPC分类号： H01L31/00 , B05D5/12
摘要： The metallic components of a IB-IIIA-VIA photovoltaic cell active layer may be directly coated onto a substrate by using relatively low melting point (e.g., less than about 500°C) metals such as indium and gallium. Specifically, CI(G)S thin-film solar cells may be fabricated by blending molten group IIIA metals with solid nanoparticles of group IB and (optionally) group IIIA metals. The molten mixture may be coated onto a substrate in the molten state, e.g., using coating techniques such as hot-dipping, hot microgravure and/or air-knife coating. After coating, the substrate may be cooled and the film annealed, e.g., in a sulfur-containing or selenium-containing atmosphere.

3. 发明申请

WO2007065096A2 CHALCOGENIDE SOLAR CELLS 审中-公开
标题翻译：硫化胶太阳能电池
公开(公告)号：WO2007065096A2
公开(公告)日：2007-06-07
申请号：PCT/US2006/061324
申请日：2006-11-29
申请人： NANOSOLAR, INC. , VAN DUREN, Jeroen, K., J. , BOLLMAN, Brent , ROSCHEISEN, Martin, R. , SAGER, Brian, M.
发明人： VAN DUREN, Jeroen, K., J. , BOLLMAN, Brent , ROSCHEISEN, Martin, R. , SAGER, Brian, M.
IPC分类号： C23C16/00 , H01L21/02 , C07F5/00
CPC分类号： H01L31/0322 , C23C4/123 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , C23C24/10 , C23C26/00 , C23C26/02 , H01L51/0026 , H01L51/426 , Y02E10/541 , Y02E10/549
摘要： A precursor material for forming a film of a group IB-IIIA- chalcogenide compound and a method of making this film are disclosed. The film contains group IB-chalcogenide nanoparticles and/or group IIIA-chalcogenide nanoparticles and/or nanoglobules and/or nanodroplets and a source of extra chalcogen. Alternatively, the film may contain core-shell nanoparticles having core nanoparticles include group IB and/or IDA elements, which are coated with a shell of elemental chalcogen material. The method of making a film of group IB-IIIA- chalcogenide compound includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.
摘要翻译：公开了用于形成IB-IIIA族硫族化合物膜的前体材料及其制造方法。该薄膜含有IB族硫属元素化物纳米颗粒和/或IIIA族硫族化物纳米颗粒和/或纳米小球和/或纳米小滴以及额外硫属元素来源。或者，所述膜可以包含芯 - 纳米颗粒，所述核 - 壳纳米颗粒具有芯部纳米颗粒，所述芯 - 纳米颗粒包括IB族和/或IDA元素，其被涂覆有元素硫属元素材料的壳。制备IB-IIIA族硫族化合物膜的方法包括混合纳米颗粒和/或纳米小球和/或纳米小滴以形成墨，将墨沉积在基底上，加热以熔化多余的硫族元素并使硫族元素与 IB族和IIIA族元素和/或硫属元素化物形成致密膜。

4. 发明申请

WO2005044551A1 INORGANIC/ORGANIC HYBRID NANOLAMINATE BARRIER FILM 审中-公开
标题翻译：无机/有机杂交纳米酰胺屏障膜
公开(公告)号：WO2005044551A1
公开(公告)日：2005-05-19
申请号：PCT/US2004/034993
申请日：2004-10-18
申请人： NANOSOLAR, INC. , SAGER, Brian, M. , ROSCHEISEN, Martin, R.
发明人： SAGER, Brian, M. , ROSCHEISEN, Martin, R.
IPC分类号： B32B1/00
CPC分类号： B05D7/56 , B05D1/005 , B05D1/02 , B05D1/18 , B05D1/30 , B05D3/0254 , B05D5/083 , B82Y30/00 , H01L51/5256 , Y10T428/13 , Y10T428/1303 , Y10T428/1352 , Y10T428/1359 , Y10T428/139 , Y10T428/265 , Y10T428/2991 , Y10T428/2998
摘要： An inorganic/organic hybrid nanolaminate barrier film (100) has a plurality of layers of an inorganic material (102) that alternate with a plurality of layers of an organic material (104). Such a barrier film can be fabricated using nanocomposite self-assembly techniques based on sol-gel chemistry.
摘要翻译：无机/有机杂化纳米酸盐阻隔膜（100）具有与多层有机材料（104）交替的多层无机材料（102）。可以使用基于溶胶 - 凝胶化学的纳米复合自组装技术来制造这种阻挡膜。

5. 发明申请

WO2008137966A2 STRUCTURES FOR LOW COST, RELIABLE SOLAR ROOFING 审中-公开
标题翻译：低成本，可靠的太阳能屋顶结构
公开(公告)号：WO2008137966A2
公开(公告)日：2008-11-13
申请号：PCT/US2008/062967
申请日：2008-05-07
申请人： STANCEL, Robert , ROSCHEISEN, Martin, R. , SAGER, Brian, M. , ADRIANI, Paul, M.
发明人： STANCEL, Robert , ROSCHEISEN, Martin, R. , SAGER, Brian, M. , ADRIANI, Paul, M.
IPC分类号： E04D13/18 , H01L31/04
CPC分类号： H01L31/02008 , F24S20/69 , H01L31/0521 , H02S20/25 , Y02A30/62 , Y02B10/12 , Y02B10/20 , Y02E10/44 , Y02E10/50
摘要： Improved photovoltaic devices, and more specifically, improved building integrated photovoltaic devices are described herein. In one embodiment, the photovoltaic roofing structure may be comprised of a roofing tile having a top surface, a bottom surface, and a recessed portion; a photovoltaic module sized to fit within the recessed portion of the roofing structure.
摘要翻译：本文描述了改进的光伏器件，更具体地，改进的建筑集成光伏器件。在一个实施例中，光伏屋顶结构可以由具有顶表面，底表面和凹陷部分的屋顶瓦片组成; 尺寸适于装配在屋顶结构的凹陷部分内的光伏组件。

6. 发明申请

WO2009051862A2 SEMICONDUCTOR THIN FILMS FORMED FROM NON-SPHERICAL PARTICLES 审中-公开
标题翻译：从非球形颗粒形成的半导体薄膜
公开(公告)号：WO2009051862A2
公开(公告)日：2009-04-23
申请号：PCT/US2008/067569
申请日：2008-06-19
申请人： VAN DUREN, Jeroen, K.J. , ROBINSON, Matthew, R. , LEIDHOLM, Craig, R. , SAGER, Brian, M.
发明人： VAN DUREN, Jeroen, K.J. , ROBINSON, Matthew, R. , LEIDHOLM, Craig, R. , SAGER, Brian, M.
IPC分类号： H01L31/042 , H01L21/36
CPC分类号： H01L31/1864 , C23C18/08 , C23C18/1204 , C23C18/1275 , C23C18/1287 , H01L21/02565 , H01L21/02568 , H01L21/02614 , H01L21/02628 , H01L31/0322 , H01L31/0352 , H01L31/04 , H01L31/1876 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily,, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices.. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
摘要翻译：提供了用于在合适的条件下在合适的载体中转化非平面或平面前体材料的方法和装置，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在选择性力沉降之后。特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。这些平面颗粒可以是具有高纵横比的纳米片。由纳米片形成的致密膜特别适用于形成光电器件。在一个实施例中，油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族的金属间片状微粒（微花纹或纳米薄片）金属间合金相。

7. 发明申请

WO2006135377A2 COATED NANOPARTICLES AND QUANTUM DOTS FOR SOLUTION-BASED FABRICATION OF PHOTOVOLTAIC CELLS 审中-公开
标题翻译：用于基于溶液的光伏电池制造的包覆纳米颗粒和量子点
公开(公告)号：WO2006135377A2
公开(公告)日：2006-12-21
申请号：PCT/US2005/026412
申请日：2005-07-26
申请人： NANOSOLAR, INC. , SAGER, Brian, M. , YU, Dong , ROBINSON, Matthew, R.
发明人： SAGER, Brian, M. , YU, Dong , ROBINSON, Matthew, R.
IPC分类号： B05D5/12 , H01L21/00
CPC分类号： H01L31/0322 , B22F1/0018 , B22F1/025 , B22F2999/00 , B82Y20/00 , B82Y30/00 , C23C16/45544 , C23C18/1216 , C23C18/52 , H01L31/035281 , H01L31/0384 , H01L31/0749 , H01L51/0026 , H01L51/0037 , H01L51/426 , Y02E10/541 , Y02E10/549 , Y10S977/773 , Y10S977/857 , Y10S977/89 , Y10S977/892 , Y10T428/12181 , Y10T428/2991 , B22F1/02 , B22F2202/15 , B22F2202/01
摘要： CIGS absorber layers fabricated using coated semiconducting nanoparticles and/or quantum dots are disclosed. Core nanoparticles and/or quantum dots containing one or more elements from group IB and/or IIIA and/or VIA may be coated with one or more layers containing elements group IB, IIIA or VIA. Using nanoparticles with a defined surface area, a layer thickness could be tuned to give the proper stoichiometric ratio, and/or crystal phase, and/or size, and/or shape. The coated nanoparticles could then be placed in a dispersant for use as an ink, paste, or paint. By appropriate coating of the core nanoparticles, the resulting coated nanoparticles can have the desired elements intermixed within the size scale of the nanoparticle, while the phase can be controlled by tuning the stochiometry, and the stoichiometry of the coated nanoparticle may be tuned by controlling the thickness of the coating(s).
摘要翻译：公开了使用涂覆的半导体纳米颗粒和/或量子点制造的CIGS吸收层。含IB和/或IIIA和/或VIA的一种或多种元素的核心纳米颗粒和/或量子点可以涂覆有含有IB，IIIA或VIA族元素的一层或多层。使用具有限定表面积的纳米颗粒，可以调节层厚度以获得适当的化学计量比和/或晶体相，和/或尺寸和/或形状。然后将涂覆的纳米颗粒置于分散剂中用作油墨，糊剂或油漆。通过适当地涂覆核心纳米颗粒，所得到的涂覆的纳米颗粒可以将期望的元素混合在纳米颗粒的尺寸范围内，而可以通过调整化学计量来控制相位，并且涂覆的纳米颗粒的化学计量可以通过控制涂层厚度。

8. 发明申请

WO2009062140A2 IMPROVED ANTI-REFLECTIVE COATING 审中-公开
标题翻译：改进的防反射涂层
公开(公告)号：WO2009062140A2
公开(公告)日：2009-05-14
申请号：PCT/US2008/082960
申请日：2008-11-10
申请人： SAGER, Brian, M. , SHEATS, James, R.
发明人： SAGER, Brian, M. , SHEATS, James, R.
IPC分类号： G02B1/11 , B29D11/00
CPC分类号： B29D11/00865 , G02B1/113 , G02B2207/107
摘要： Methods and devices are provided for improved anti-reflective coatings. Non- vacuum deposition of transparent conductive electrodes in a roll-to-roll manufacturing environment is disclosed. In one embodiment of the present invention, a device is provided comprising a multi-layer anti-reflective coating formed over a substantially transparent substrate; wherein the multi-layer anti-reflective coating comprises of a plurality of nanostructured layers, wherein each of the layers has a tuned porosity and at least some of the nanostructured layers have different porosities to create a different index of refraction for those layers. In some embodiments, the absorber layer for use with this anti-reflective layer is a group IB-IIIA-VIA absorber layer.
摘要翻译：提供了改进的抗反射涂层的方法和装置。公开了在卷对卷制造环境中的非真空沉积透明导电电极。在本发明的一个实施例中，提供一种装置，其包括在基本上透明的基板上形成的多层抗反射涂层; 其中所述多层抗反射涂层由多个纳米结构层组成，其中每个层具有调谐的孔隙度，并且所述纳米结构层中的至少一些具有不同的孔隙率以产生对于那些层的不同折射率。在一些实施例中，与该抗反射层一起使用的吸收层是IB-IIIA-VIA族吸收层。

9. 发明申请

WO2010094048A2 SOLAR CELL ABSORBER LAYER FORMED FROM EQUILIBRIUM PRECURSOR(S) 审中-公开
标题翻译：太阳能电池吸收层由均衡器前体形成（S）
公开(公告)号：WO2010094048A2
公开(公告)日：2010-08-19
申请号：PCT/US2010/024342
申请日：2010-02-16
申请人： WOODRUFF, Jacob , VAN DUREN, Jeroen, K., J. , ROBINSON, Matthew, R. , SAGER, Brian, M.
发明人： WOODRUFF, Jacob , VAN DUREN, Jeroen, K., J. , ROBINSON, Matthew, R. , SAGER, Brian, M.
IPC分类号： H01L31/042
CPC分类号： H01L31/0322 , C23C18/08 , C23C18/1204 , C23C18/127 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C28/021 , C23C28/023 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/341 , C23C28/345 , C23C28/36 , H01L21/02425 , H01L21/02568 , H01L21/02601 , H01L21/02614 , H01L21/02628 , H01L31/1864 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a solution on a substrate to form a precursor layer. The solution comprises of at least one equilibrium and/or near equilibrium material. The precursor layer is processed in one or more steps to form a photovoltaic absorber layer. In one embodiment, the absorber layer may be created by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. Optionally, the absorber layer may be processed by thermal reaction of the precursor layer in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer.
摘要翻译：提供了用于形成吸收层的方法和装置。在一个实施方案中，提供了一种方法，其包括在基底上沉积溶液以形成前体层。溶液包含至少一种平衡和/或近平衡材料。在一个或多个步骤中处理前体层以形成光伏吸收层。在一个实施方案中，吸收层可以通过将前体层加工成固体膜，然后在至少含有元素周期表第VIA族元素的气氛中使固体膜热反应形成光伏吸收层来产生。任选地，吸收层可以通过前体层在至少含有周期表第VIA族元素的气氛中进行热反应来加工，以形成光伏吸收层。

10. 发明申请

WO2008095146A3 SOLAR CELL ABSORBER LAYER FORMED FROM METAL ION PRECURSORS 审中-公开
公开(公告)号：WO2008095146A3
公开(公告)日：2008-08-07
申请号：PCT/US2008/052730
申请日：2008-01-31
申请人： VAN DUREN, Jeroen, K.J. , ROBINSON, Matthew, R. , SAGER, Brian, M.
发明人： VAN DUREN, Jeroen, K.J. , ROBINSON, Matthew, R. , SAGER, Brian, M.
IPC分类号： H01L31/04
摘要： Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a solution on a substrate to form a precursor layer. The solution comprises of at least one polar solvent, at least one binder, and at least one Group IB and/or IIIA hydroxide. The precursor layer is processed in one or more steps to form a photovoltaic absorber layer. In one embodiment, the absorber layer may be created by processing the precursor layer into a solid film and then thermally reacting the solid film in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer. Optionally, the absorber layer may be processed by thermal reaction of the precursor layer in an atmosphere containing at least an element of Group VIA of the Periodic Table to form the photovoltaic absorber layer.

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