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1. 发明申请

WO2012161501A3 METHOD FOR SEPARATING A GRAPHENE THIN FILM 审中-公开
标题翻译：分离薄膜薄膜的方法
公开(公告)号：WO2012161501A3
公开(公告)日：2013-01-24
申请号：PCT/KR2012004039
申请日：2012-05-22
申请人： IUCF HYU , KIM TAE WHAN , LEE SE WON , LEE DEA UK , JEONG JE MYUNG
发明人： KIM TAE WHAN , LEE SE WON , LEE DEA UK , JEONG JE MYUNG
IPC分类号： C01B31/02 , B01J19/12 , B01J23/755
CPC分类号： B01J23/755 , B01J21/18 , B01J23/10 , B01J23/26 , B01J23/34 , B01J23/745 , B01J23/75 , B01J23/78 , B01J27/04 , B01J27/132 , B01J33/00 , B01J35/0033 , B01J37/0244 , B82Y30/00 , B82Y40/00 , C01B32/184
摘要： Provided is a method for separating a graphene thin film. The method for separating a graphene thin film involves sequentially forming a magnetic catalyst layer and a graphene thin layer on a substrate, positioning a magnetic field-applying tool on the graphene thin layer, applying a magnetic field through the magnetic field-applying tool to separate the magnetic catalyst layer having the graphene thin layer from the substrate, then separating the graphene thin layer from the magnetic catalyst layer, thereby separating the graphene thin film in a safe and easy manner.
摘要翻译：提供了一种用于分离石墨烯薄膜的方法。用于分离石墨烯薄膜的方法包括在基板上顺序形成磁性催化剂层和石墨烯薄层，将磁场施加工具定位在石墨烯薄层上，通过磁场施加工具施加磁场以分离所述磁性催化剂层从所述基板具有所述石墨烯薄层，然后将所述石墨烯薄层与所述磁性催化剂层分离，从而以安全且容易的方式分离所述石墨烯薄膜。

2. 发明申请

WO2012070834A2 TOUCH SCREEN PANEL AND IMAGE DISPLAY DEVICE INCLUDING SAME 审中-公开
标题翻译：触摸屏面板和图像显示装置，包括它们
公开(公告)号：WO2012070834A2
公开(公告)日：2012-05-31
申请号：PCT/KR2011008909
申请日：2011-11-22
申请人： IUCF HYU , KIM TAE WHAN , HAN GYU WAN , PARK SU HYEONG
发明人： KIM TAE WHAN , HAN GYU WAN , PARK SU HYEONG
IPC分类号： G06F3/044
CPC分类号： G06F3/041 , G06F3/044 , G06F2203/04111
摘要： The present invention relates to a touch screen panel and to an image display device including same. The touch screen panel comprises: a first sensing wire pattern layer in which a plurality of first sensing wire pattern lines are formed in a first diagonal direction; a second sensing wire pattern layer in which a plurality of second sensing wire pattern lines are formed in a second diagonal direction so as to form a preset angle with the first sensing wires; and an insulation layer for providing insulation between the 1st sensing wire pattern layer and the 2nd sensing wire pattern layer. Since capacitive touch sensing wire pattern lines are disposed diagonally with a certain angle therebetween, the number of wires arranged on the major axis of the bezel of the touch screen panel can be reduced when compared to the resolution of touch screen panels of prior art in which the arrangement is perpendicular.
摘要翻译：触摸屏面板技术领域本发明涉及触摸屏面板及其构成的图像显示装置。触摸屏面板包括：第一感测线图案层，其中多个第一感测线图案线在第一对角线方向上形成; 第二感测线图案层，其中多个第二感测线图案线形成在第二对角线方向上以与第一感测线形成预设角度; 以及用于在第一感测线图案层和第二感测线图案层之间提供绝缘的绝缘层。由于电容式触摸感测线图案线以对角线设置在其间具有一定的角度，所以与现有技术的触摸屏面板的分辨率相比，布置在触摸屏面板的边框的长轴上的线数可以减少，其中排列垂直。

3. 发明申请

WO2011005013A3 SOLAR CELL USING P-I-N NANOWIRES 审中-公开
标题翻译：太阳能电池使用P-I-N纳米
公开(公告)号：WO2011005013A3
公开(公告)日：2011-04-14
申请号：PCT/KR2010004395
申请日：2010-07-06
申请人： IUCF HYU , KIM TAE-WHAN , YOU JOO-HYUNG , JUNG JAE-HUN , YI JAE-SEOK , PARK WON-IL
发明人： KIM TAE-WHAN , YOU JOO-HYUNG , JUNG JAE-HUN , YI JAE-SEOK , PARK WON-IL
IPC分类号： H01L31/042
CPC分类号： H01L31/03529 , H01L31/035281 , Y02E10/50
摘要： The present invention relates to a solar cell using p-i-n nanowires, which efficiently absorbs solar light of within a wide range of wavelengths without a loss of light and generates photovoltaic power, and which involves a simple process and has low process costs. The solar cell using p-i-n nanowires according to the present invention comprises a semiconductor layer and a photovoltaic layer. The photovoltaic layer includes a semiconductor structure constituted by a core-nanowire which extends upwardly from the semiconductor layer and which consists of an intrinsic semiconductor material, and a shell-nanowire which covers the outside of the core-nanowire and which consists of a semiconductor material. The semiconductor material which forms the semiconductor layer is an n-type and the semiconductor material which forms the cell-nanowire is a p-type. Alternatively, the semiconductor material which forms the semiconductor layer is a p-type and the semiconductor material which forms the cell-nanowire is an n-type.
摘要翻译：本发明涉及一种使用p-i-n纳米线的太阳能电池，其在不损失光线的情况下有效地吸收宽波长范围内的太阳光并且产生光伏电力，并且其涉及简单的工艺并且具有低的工艺成本。使用根据本发明的p-i-n纳米线的太阳能电池包括半导体层和光伏层。该光电层包括由从半导体层向上延伸并由本征半导体材料构成的核 - 纳米线和覆盖核 - 纳米线外部并且由半导体材料构成的壳纳米线构成的半导体结构。形成半导体层的半导体材料是n型，并且形成单元纳米线的半导体材料是p型。或者，形成半导体层的半导体材料是p型，并且形成单元纳米线的半导体材料是n型。

4. 发明申请

WO2009061134A1 METHOD OF FABRICATING SOLAR CELL UTILIZING SEMICONDUCTOR NANOPARTICLES EMBEDDED IN POLYMER LAYER 审中-公开
标题翻译：利用嵌入在聚合物层中的半导体纳米粒子制备太阳能电池的方法
公开(公告)号：WO2009061134A1
公开(公告)日：2009-05-14
申请号：PCT/KR2008/006533
申请日：2008-11-06
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY , KIM, Tae-Whan , KIM, Young-Ho , FUSHAN, Li , JUNG, Jae-Hoon
发明人： KIM, Tae-Whan , KIM, Young-Ho , FUSHAN, Li , JUNG, Jae-Hoon
IPC分类号： H01L31/042
CPC分类号： H01L31/03529 , B82Y20/00 , H01L51/0037 , H01L51/0042 , H01L51/4233 , H01L51/426 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： Provided is a method of fabricating a solar cell utilizing semiconductor nanoparticles embedded in a polymer layer. The method includes: forming anodes on a substrate; a semiconductor raw material layer on the anodes; spin coating a polymer precursor layer on the semiconductor raw material layer; forming semiconductor nanoparticles from the semiconductor raw material layer while a polymer layer is formed by performing heat treatment on the polymer precursor layer, thereby forming a photoelectro-motive force layer made of the polymer layer in which the nanoparticles are embedded; and forming cathodes on the photoelectro-motive force layer. Each layer excluding electrodes and nanoparticles in a solar cell is formed of polymer with low price so that a device can be fast and simply fabricated and various nanoparticles can be formed according to a semiconductor raw material to be deposited during a solar cell fabrication process. In addition, the size and density of the nanoparticles formed according to heat treatment conditions can be easily adjusted so that efficiency of a photoelectro-motive force of the solar cell can be optimized according to an operating environment.
摘要翻译：提供了利用嵌入聚合物层中的半导体纳米颗粒来制造太阳能电池的方法。该方法包括：在基板上形成阳极; 阳极上的半导体原料层; 在半导体原料层上旋涂聚合物前体层; 在通过对聚合物前体层进行热处理而形成聚合物层的同时从半导体原料层形成半导体纳米颗粒，从而形成由其中嵌入纳米颗粒的聚合物层制成的光电驱动层; 并在光电驱动层上形成阴极。除太阳能电池中的电极和纳米颗粒之外的每个层均由低价格的聚合物形成，使得可以快速简单地制造器件，并且可以根据要在太阳能电池制造工艺中沉积的半导体原料形成各种纳米粒子。此外，根据热处理条件形成的纳米颗粒的尺寸和密度可以容易地调节，从而可以根据操作环境优化太阳能电池的光电动势的效率。

5. 发明申请

WO2009038256A1 MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：存储器件及其制造方法
公开(公告)号：WO2009038256A1
公开(公告)日：2009-03-26
申请号：PCT/KR2008/000718
申请日：2008-02-05
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY , KIM, Tae-Whan , FUSHAN, Li , JUNG, Jae-Hoon
发明人： KIM, Tae-Whan , FUSHAN, Li , JUNG, Jae-Hoon
IPC分类号： H01L27/115
CPC分类号： G11C13/025 , B82Y10/00 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/141 , H01L45/16 , H01L45/1608
摘要： Provided are a memory device employing fullerene as a flexible electrode and method of fabricating the same. The memory device includes first and second electrodes each formed of a fullerene thin film, and a nanoparticle layer between the first and second electrodes configured to trap and emit electrons. If a flexible and light substrate such as a plastic substrate instead of an inorganic substrate such as a Si substrate is used, flexibility and portability of electronic equipment can be improved. In addition, the memory device is fabricated using only a spin-coating process, thereby reducing production cost and simplifying the fabricating method.
摘要翻译：提供了使用富勒烯作为柔性电极的存储器件及其制造方法。存储器件包括各自由富勒烯薄膜形成的第一和第二电极以及配置成捕获和发射电子的第一和第二电极之间的纳米颗粒层。如果使用诸如塑料基板的柔性和轻质基板而不是诸如Si基板的无机基板，则可以提高电子设备的灵活性和便携性。此外，仅使用旋涂工艺制造存储器件，从而降低生产成本并简化制造方法。

6. 发明申请

WO2013002501A3 ORGANIC LIGHT EMITTING DEVICE 审中-公开
标题翻译：有机发光装置
公开(公告)号：WO2013002501A3
公开(公告)日：2013-02-21
申请号：PCT/KR2012004767
申请日：2012-06-15
申请人： IUCF HYU , TOP ENG CO LTD , KIM TAE WHAN , BANG HYUN SUNG , CHOO DONG CHUL
发明人： KIM TAE WHAN , BANG HYUN SUNG , CHOO DONG CHUL
IPC分类号： H01L51/52 , H05B33/22 , H05B33/26
CPC分类号： H01L51/5203 , B82Y10/00 , H01L51/0048 , H01L51/502 , H01L51/5296
摘要： Provided is an organic light emitting device including a nano composite layer. The organic light emitting device adopts a nano composite layer including an insulator and light emitting nono particles within a device, thereby simultaneously insulating a control electrode and changing the color of light emitted from a light emitting layer, thereby improving external quantum efficiency. Further, the amount of electron holes and electrons injected into the light emitting layer may be adjusted through a voltage applied to the control electrode so as to secure a stable current when the device is operated. In addition, when compared to a conventional light emitting device, the surface area of positive and negative electrodes may be reduced so as to reduce reflectance with respect to external light.
摘要翻译：提供了一种包括纳米复合层的有机发光器件。有机发光器件在器件内采用包括绝缘体和发光非晶粒子的纳米复合层，由此同时绝缘控制电极并改变从发光层发射的光的颜色，由此提高外部量子效率。此外，注入到发光层中的电子空穴和电子的量可以通过施加到控制电极的电压来调整，从而在器件工作时确保稳定的电流。另外，当与传统的发光装置相比时，可以减小正极和负极的表面积，从而降低相对于外部光的反射率。

7. 发明申请

WO2012115392A2 SOLAR CELL HAVING A DOUBLE-SIDED STRUCTURE, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：具有双面结构的太阳能电池及其制造方法技术领域本发明涉及一种具有双面结构的太阳能电池及其制造方法
公开(公告)号：WO2012115392A2
公开(公告)日：2012-08-30
申请号：PCT/KR2012001188
申请日：2012-02-17
申请人： IUCF HYU , KIM TAE WHAN , HAN QIFENG , JUNG JAE HUN
发明人： KIM TAE WHAN , HAN QIFENG , JUNG JAE HUN
IPC分类号： H01L31/042 , H01L31/0749 , H01L31/18
CPC分类号： H01L31/0725 , H01L31/035218 , H01L31/035227 , H01L31/0684 , H01L31/0749 , H01L31/18 , H01L51/4233 , Y02E10/541 , Y02P70/521
摘要： The present invention relates to a solar cell having nanostructures on both surfaces of a transparent substrate, and to a method for manufacturing same. The nanostructures, which face each other with respect to the substrate and which transport electrons, are formed using zinc-oxide nanowires. Also, a hole-transport layer using CIS nanoparticles is formed in order to absorb light having a short wavelength and to transport generated holes. A hole-transport layer including CIGS nanoparticles for absorbing light having a relatively long wavelength is formed on the side facing the hole-transport layer including the CIS nanoparticles.
摘要翻译：本发明涉及在透明基板的两个表面上具有纳米结构的太阳能电池及其制造方法。使用氧化锌纳米线形成相对于衬底彼此面对并且传输电子的纳米结构。而且，使用CIS纳米颗粒形成空穴传输层以吸收短波长的光并传输产生的空穴。包括用于吸收具有相对较长波长的光的CIGS纳米粒子的空穴传输层形成在面对包含CIS纳米粒子的空穴传输层的一侧。

8. 发明申请

WO2010053338A3 PROCESS FOR FORMATION OF METAL OXIDE SEMICONDUCTOR NANOPARTICLES, POLYMER LIGHT-EMITTING DEVICES USING THE NANOPARTICLES AND FABRICATION METHOD 审中-公开
标题翻译：用于形成金属氧化物半导体纳米颗粒的方法，使用纳米颗粒和制备方法的聚合物发光装置
公开(公告)号：WO2010053338A3
公开(公告)日：2010-08-05
申请号：PCT/KR2009006591
申请日：2009-11-10
申请人： UNIV SOGANG IND UNIV COOP FOUN , KIM TAE-WHAN , SON DONG-ICK , YOO CHAN-HO , JUNG JAE-HOON , CHOO DONG-CHUL
发明人： KIM TAE-WHAN , SON DONG-ICK , YOO CHAN-HO , JUNG JAE-HOON , CHOO DONG-CHUL
IPC分类号： B82B3/00
CPC分类号： H05B33/20 , H01L51/0037 , H01L51/0042 , H01L51/5012
摘要： The present invention relates to a porcess for formation of metal oxide semiconductor nanoparticles, a polymer light-emitting device using the nanoparticles and a fabrication method thereof. A nanoparticle formation process according to the present invention involves dissolving raw metal salts into a solvent to prepare a mixed solution, followed by heating and then cooling the mixed solution in order to form metal oxide nanoparticles in the mixed solution. A polymer light-emitting device according to the present invention comprises a substrate; a first electrode formed over the substrate; a light-emitting layer formed over the first electrode, the light-emitting layer comprised of metal oxide nanoparticles in a composite single-layer polymer thin film formed of a conductive polymer and a dielectric polymer; and a second electrode formed over the light-emitting layer.
摘要翻译：本发明涉及形成金属氧化物半导体纳米粒子的方法，使用该纳米粒子的高分子发光元件及其制造方法。根据本发明的纳米颗粒形成方法包括将原料金属盐溶解到溶剂中以制备混合溶液，然后加热然后冷却混合溶液，以在混合溶液中形成金属氧化物纳米颗粒。根据本发明的高分子发光器件包括：衬底; 形成在所述基板上的第一电极; 形成在第一电极上的发光层，由导电性聚合物和电介质聚合物形成的复合单层聚合物薄膜中的金属氧化物纳米粒子构成的发光层; 以及形成在发光层上的第二电极。

9. 发明申请

WO2009154386A2 WORM MEMORY USING NANOPARTICLES CONTAINED IN A POLYMER THIN FILM 审中-公开
标题翻译：使用聚合物薄膜中含有纳米粒子的WORM记忆
公开(公告)号：WO2009154386A2
公开(公告)日：2009-12-23
申请号：PCT/KR2009003207
申请日：2009-06-16
申请人： UNIV SOGANG IND UNIV COOP FOUN , KIM TAE-WHAN , HAM JUNG-HOON , JUNG JAE-HOON , KIM SANG-WOOK
发明人： KIM TAE-WHAN , HAM JUNG-HOON , JUNG JAE-HOON , KIM SANG-WOOK
IPC分类号： H01L21/8246
CPC分类号： H01L27/10 , B82Y10/00 , H01L27/285
摘要： Disclosed is a WORM memory using nanoparticles contained in a polymer thin film. The WORM memory according to the present invention includes a substrate, and a lower electrode which is formed on the substrate, and consists of conductive materials. The WORM memory further includes a memory layer which is formed on the lower electrode, and has nanoparticles distributed in polymer materials, and an upper electrode which is formed on the memory layer, and consists of conductive materials. The WORM memory according to the present invention employs an insulating polymer and inorganic nanoparticles which are chemically stable, thus significantly improving resistances against an external environmental condition such as heat, light, etc. as compared to a WORM memory which employs organic matter, and maximally suppressing a memory time from being shortened due to the degradation of the characteristics of organic matter.
摘要翻译：公开了使用包含在聚合物薄膜中的纳米颗粒的WORM记忆。根据本发明的WORM存储器包括衬底和形成在衬底上的下电极，并由导电材料组成。 WORM存储器还包括形成在下电极上并具有分散在聚合物材料中的纳米颗粒的存储层，以及形成在存储层上的由导电材料组成的上电极。根据本发明的WORM存储器采用化学稳定的绝缘聚合物和无机纳米颗粒，因此与使用有机物质的WORM存储器相比，显着提高了耐热，光等外部环境条件的电阻，并且最大程度地抑制由于有机物的特性的劣化而引起的记忆时间的缩短。

10. 发明申请

WO2009104870A3 MEMORY DEVICE USING CARBON NANOTUBES ATTACHED NANOPARTICLES THERETO AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：使用碳纳米管的存储器件及其制造方法
公开(公告)号：WO2009104870A3
公开(公告)日：2009-10-22
申请号：PCT/KR2009000234
申请日：2009-01-16
申请人： UNIV SOGANG IND UNIV COOP FOUN , KIM TAE-WHAN , FUSHAN LI , SON DONG-ICK , KIM SANG-WOOK , JUNG JAE-HOON
发明人： KIM TAE-WHAN , FUSHAN LI , SON DONG-ICK , KIM SANG-WOOK , JUNG JAE-HOON
IPC分类号： H01L27/115
CPC分类号： H01L51/0049 , B82Y10/00 , G11C13/025 , H01L27/2472 , H01L45/10 , H01L45/1233 , H01L45/14 , H01L45/1608 , H01L51/0591
摘要： Provided are a memory device using carbon nanotubes (CNTs) and a method of fabricating the same. The memory device includes a substrate, a first electrode formed on the substrate, a charge trapping layer formed on the first electrode and comprised of carbon nanotubes (CNTs) to which nanoparticles are attached, and a second electrode formed on the charge trapping layer. The memory device is a new device which uses a structure in which the nanoparticles are attached to the surface of the CNTs to store a state.
摘要翻译：提供了使用碳纳米管（CNT）的存储器件及其制造方法。存储器件包括：衬底，形成在衬底上的第一电极，形成在第一电极上并由纳米颗粒附着的碳纳米管（CNT）组成的电荷捕获层，以及形成在电荷俘获层上的第二电极。存储器件是使用其中纳米颗粒附着到CNT的表面以存储状态的结构的新器件。

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