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1. 发明申请

WO2012070834A2 TOUCH SCREEN PANEL AND IMAGE DISPLAY DEVICE INCLUDING SAME 审中-公开
标题翻译：触摸屏面板和图像显示装置，包括它们
公开(公告)号：WO2012070834A2
公开(公告)日：2012-05-31
申请号：PCT/KR2011008909
申请日：2011-11-22
申请人： IUCF HYU , KIM TAE WHAN , HAN GYU WAN , PARK SU HYEONG
发明人： KIM TAE WHAN , HAN GYU WAN , PARK SU HYEONG
IPC分类号： G06F3/044
CPC分类号： G06F3/041 , G06F3/044 , G06F2203/04111
摘要： The present invention relates to a touch screen panel and to an image display device including same. The touch screen panel comprises: a first sensing wire pattern layer in which a plurality of first sensing wire pattern lines are formed in a first diagonal direction; a second sensing wire pattern layer in which a plurality of second sensing wire pattern lines are formed in a second diagonal direction so as to form a preset angle with the first sensing wires; and an insulation layer for providing insulation between the 1st sensing wire pattern layer and the 2nd sensing wire pattern layer. Since capacitive touch sensing wire pattern lines are disposed diagonally with a certain angle therebetween, the number of wires arranged on the major axis of the bezel of the touch screen panel can be reduced when compared to the resolution of touch screen panels of prior art in which the arrangement is perpendicular.
摘要翻译：触摸屏面板技术领域本发明涉及触摸屏面板及其构成的图像显示装置。触摸屏面板包括：第一感测线图案层，其中多个第一感测线图案线在第一对角线方向上形成; 第二感测线图案层，其中多个第二感测线图案线形成在第二对角线方向上以与第一感测线形成预设角度; 以及用于在第一感测线图案层和第二感测线图案层之间提供绝缘的绝缘层。由于电容式触摸感测线图案线以对角线设置在其间具有一定的角度，所以与现有技术的触摸屏面板的分辨率相比，布置在触摸屏面板的边框的长轴上的线数可以减少，其中排列垂直。

2. 发明申请

WO2012093873A2 METHOD FOR DETECTING TOUCH POSITION OF TOUCH SCREEN AND TOUCH SCREEN USING SAME 审中-公开
标题翻译：用于检测触摸屏的触摸位置和触摸屏的方法
公开(公告)号：WO2012093873A2
公开(公告)日：2012-07-12
申请号：PCT/KR2012000127
申请日：2012-01-05
申请人： IUCF HYU , KIM TAE WHAN , RYU JU TAE , PARK SU HYEONG
发明人： KIM TAE WHAN , RYU JU TAE , PARK SU HYEONG
IPC分类号： G06F3/03 , G06F3/041
CPC分类号： G06F3/041 , G06F3/0416 , G06F3/044
摘要： Disclosed are a method for detecting a touch position of a touch screen and the touch screen using the same. A method for detecting a touch position on a touch screen comprises the steps of: detecting a touched touch screen block among touch screen blocks by using signals that are generated from at least one touch sensor among touch sensors, which are included in a plurality of touch screen blocks divided on an area of the touch screen; and detecting a touch position in the detected touch screen block on the basis of a signal of a touch sensor which is included in the detected touch screen block. Thus, compared to an existing method of processing a signal by reading measurement values of all measurement sensors, the invention enables fast signal processing, thereby reducing measurement signal processing time for measuring a touch position of a touch screen.
摘要翻译：公开了一种用于检测触摸屏和使用其的触摸屏的触摸位置的方法。一种用于检测触摸屏上的触摸位置的方法，包括以下步骤：通过使用包括在多个触摸中的触摸传感器中的至少一个触摸传感器产生的信号来检测触摸屏块中触摸的触摸屏块屏幕块分割在触摸屏的一个区域上; 并且根据检测到的触摸屏块中包含的触摸传感器的信号来检测检测到的触摸屏块中的触摸位置。因此，与通过读取所有测量传感器的测量值来处理信号的现有方法相比，本发明实现了快速信号处理，从而减少了用于测量触摸屏的触摸位置的测量信号处理时间。

3. 发明申请

WO2012161501A3 METHOD FOR SEPARATING A GRAPHENE THIN FILM 审中-公开
标题翻译：分离薄膜薄膜的方法
公开(公告)号：WO2012161501A3
公开(公告)日：2013-01-24
申请号：PCT/KR2012004039
申请日：2012-05-22
申请人： IUCF HYU , KIM TAE WHAN , LEE SE WON , LEE DEA UK , JEONG JE MYUNG
发明人： KIM TAE WHAN , LEE SE WON , LEE DEA UK , JEONG JE MYUNG
IPC分类号： C01B31/02 , B01J19/12 , B01J23/755
CPC分类号： B01J23/755 , B01J21/18 , B01J23/10 , B01J23/26 , B01J23/34 , B01J23/745 , B01J23/75 , B01J23/78 , B01J27/04 , B01J27/132 , B01J33/00 , B01J35/0033 , B01J37/0244 , B82Y30/00 , B82Y40/00 , C01B32/184
摘要： Provided is a method for separating a graphene thin film. The method for separating a graphene thin film involves sequentially forming a magnetic catalyst layer and a graphene thin layer on a substrate, positioning a magnetic field-applying tool on the graphene thin layer, applying a magnetic field through the magnetic field-applying tool to separate the magnetic catalyst layer having the graphene thin layer from the substrate, then separating the graphene thin layer from the magnetic catalyst layer, thereby separating the graphene thin film in a safe and easy manner.
摘要翻译：提供了一种用于分离石墨烯薄膜的方法。用于分离石墨烯薄膜的方法包括在基板上顺序形成磁性催化剂层和石墨烯薄层，将磁场施加工具定位在石墨烯薄层上，通过磁场施加工具施加磁场以分离所述磁性催化剂层从所述基板具有所述石墨烯薄层，然后将所述石墨烯薄层与所述磁性催化剂层分离，从而以安全且容易的方式分离所述石墨烯薄膜。

4. 发明申请

WO2013002501A3 ORGANIC LIGHT EMITTING DEVICE 审中-公开
标题翻译：有机发光装置
公开(公告)号：WO2013002501A3
公开(公告)日：2013-02-21
申请号：PCT/KR2012004767
申请日：2012-06-15
申请人： IUCF HYU , TOP ENG CO LTD , KIM TAE WHAN , BANG HYUN SUNG , CHOO DONG CHUL
发明人： KIM TAE WHAN , BANG HYUN SUNG , CHOO DONG CHUL
IPC分类号： H01L51/52 , H05B33/22 , H05B33/26
CPC分类号： H01L51/5203 , B82Y10/00 , H01L51/0048 , H01L51/502 , H01L51/5296
摘要： Provided is an organic light emitting device including a nano composite layer. The organic light emitting device adopts a nano composite layer including an insulator and light emitting nono particles within a device, thereby simultaneously insulating a control electrode and changing the color of light emitted from a light emitting layer, thereby improving external quantum efficiency. Further, the amount of electron holes and electrons injected into the light emitting layer may be adjusted through a voltage applied to the control electrode so as to secure a stable current when the device is operated. In addition, when compared to a conventional light emitting device, the surface area of positive and negative electrodes may be reduced so as to reduce reflectance with respect to external light.
摘要翻译：提供了一种包括纳米复合层的有机发光器件。有机发光器件在器件内采用包括绝缘体和发光非晶粒子的纳米复合层，由此同时绝缘控制电极并改变从发光层发射的光的颜色，由此提高外部量子效率。此外，注入到发光层中的电子空穴和电子的量可以通过施加到控制电极的电压来调整，从而在器件工作时确保稳定的电流。另外，当与传统的发光装置相比时，可以减小正极和负极的表面积，从而降低相对于外部光的反射率。

5. 发明申请

WO2012115392A2 SOLAR CELL HAVING A DOUBLE-SIDED STRUCTURE, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：具有双面结构的太阳能电池及其制造方法技术领域本发明涉及一种具有双面结构的太阳能电池及其制造方法
公开(公告)号：WO2012115392A2
公开(公告)日：2012-08-30
申请号：PCT/KR2012001188
申请日：2012-02-17
申请人： IUCF HYU , KIM TAE WHAN , HAN QIFENG , JUNG JAE HUN
发明人： KIM TAE WHAN , HAN QIFENG , JUNG JAE HUN
IPC分类号： H01L31/042 , H01L31/0749 , H01L31/18
CPC分类号： H01L31/0725 , H01L31/035218 , H01L31/035227 , H01L31/0684 , H01L31/0749 , H01L31/18 , H01L51/4233 , Y02E10/541 , Y02P70/521
摘要： The present invention relates to a solar cell having nanostructures on both surfaces of a transparent substrate, and to a method for manufacturing same. The nanostructures, which face each other with respect to the substrate and which transport electrons, are formed using zinc-oxide nanowires. Also, a hole-transport layer using CIS nanoparticles is formed in order to absorb light having a short wavelength and to transport generated holes. A hole-transport layer including CIGS nanoparticles for absorbing light having a relatively long wavelength is formed on the side facing the hole-transport layer including the CIS nanoparticles.
摘要翻译：本发明涉及在透明基板的两个表面上具有纳米结构的太阳能电池及其制造方法。使用氧化锌纳米线形成相对于衬底彼此面对并且传输电子的纳米结构。而且，使用CIS纳米颗粒形成空穴传输层以吸收短波长的光并传输产生的空穴。包括用于吸收具有相对较长波长的光的CIGS纳米粒子的空穴传输层形成在面对包含CIS纳米粒子的空穴传输层的一侧。

6. 发明申请

WO2012169731A3 NAND FLASH MEMORY HAVING 3-DIMENSIONAL STRUCTURE 审中-公开
标题翻译：具有三维结构的NAND闪存
公开(公告)号：WO2012169731A3
公开(公告)日：2013-02-07
申请号：PCT/KR2012003784
申请日：2012-05-15
申请人： IUCF HYU , KIM TAE WHAN , YOU JOO HYUNG , JIN JUN
发明人： KIM TAE WHAN , YOU JOO HYUNG , JIN JUN
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L27/11582 , H01L29/7926
摘要： Disclosed is a NAND flash memory which is vertically elongated from a substrate and has a multi-layered lamination structure. A control gate is formed by alternating with an interlayer insulating film. In addition, the control gate is separated in a direction parallel to the substrate through a barrier insulating film. Therefore, only one side of the control gate is in contact with a blocking insulating film. As a result, independent charge-trapping is enabled from one stack structure to both sides thereof. Consequently, the density of flash memory is increased and charge controllability is improved.
摘要翻译：公开了一种从衬底垂直伸长并具有多层层压结构的NAND闪速存储器。通过与层间绝缘膜交替形成控制栅极。此外，控制栅极通过阻挡绝缘膜在与衬底平行的方向上分离。因此，只有控制栅极的一侧与阻挡绝缘膜接触。结果，可以从一个堆叠结构到其两侧实现独立的电荷俘获。因此，闪存的密度增加，并且电荷控制性提高。

7. 发明申请

WO2012077951A3 FLASH MEMORY USING FRINGING EFFECTS AND ELECTROSTATIC SHIELDING 审中-公开
标题翻译：闪光存储器使用切片效果和静电屏蔽
公开(公告)号：WO2012077951A3
公开(公告)日：2012-09-27
申请号：PCT/KR2011009364
申请日：2011-12-05
申请人： IUCF HYU , KIM TAE WHAN , YOU JOO HYUNG , KIM SUNG HO
发明人： KIM TAE WHAN , YOU JOO HYUNG , KIM SUNG HO
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L29/792 , H01L27/11568 , H01L29/4234 , H01L29/66833
摘要： Disclosed is a flash memory using fringing effects and an electrostatic shielding function. A gap between adjacent gate stacks is controlled by fringing effects, and an operation of each of the gate stacks is electrostatically shielded by a gate electrode extended to a tunneling insulation layer. Thus, a coupling phenomenon between adjacent gate stacks is minimized by electrostatic shielding.
摘要翻译：公开了一种使用边缘效果和静电屏蔽功能的闪存。通过边缘效应来控制相邻栅极堆叠之间的间隙，并且每个栅极堆叠的操作被延伸到隧道绝缘层的栅电极静电屏蔽。因此，通过静电屏蔽使相邻栅极叠层之间的耦合现象最小化。

8. 发明申请

WO2013032191A3 NON-VOLATILE POLYMER MEMORY DEVICE INCLUDING A BUFFER LAYER, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：包含缓冲层的非易失性聚合物存储器件及其制造方法
公开(公告)号：WO2013032191A3
公开(公告)日：2013-04-25
申请号：PCT/KR2012006806
申请日：2012-08-27
申请人： IUCF HYU , KIM TAE WHAN , SON JUNG MIN
发明人： KIM TAE WHAN , SON JUNG MIN
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： G11C13/0016 , G11C2213/15 , G11C2213/51 , H01L51/0037 , H01L51/0591
摘要： The present invention relates to a non-volatile polymer memory device, and to a method for manufacturing same, and more particularly, to a non-volatile polymer memory device, and to a method for manufacturing same, wherein the device comprises: a substrate; a lower electrode formed on the substrate; a buffer layer formed on the lower electrode; a PEDOT:PSS thin film layer formed on the buffer layer; and an upper electrode formed on the PEDOT:PSS thin film layer. The non-volatile memory device of the present invention has the buffer layer inserted between the lower electrode and the PEDOT:PSS thin film layer, thereby exhibiting the effects of preventing oxide film formation between the lower electrode and the PEDOT:PSS thin film layer and causing the upper surface of the PEDOT:PSS thin film layer to have a uniform roughness despite being manufactured using a flexible substrate. Therefore, the flexibility and high memory margin of a PEDOT:PSS memory device can be maintained.
摘要翻译：本发明涉及一种非挥发性聚合物存储装置及其制造方法，更具体地涉及一种非挥发性聚合物存储装置及其制造方法，其中该装置包括：一基板; 形成在所述基板上的下电极; 形成在下电极上的缓冲层; PEDOT：形成在缓冲层上的PSS薄膜层; 以及形成在PEDOT：PSS薄膜层上的上电极。本发明的非易失性存储器件具有插入在下电极和PEDOT：PSS薄膜层之间的缓冲层，从而表现出防止下电极和PEDOT：PSS薄膜层和尽管使用柔性基板制造，但是使PEDOT：PSS薄膜层的上表面具有均匀的粗糙度。因此，可以保持PEDOT：PSS存储器件的灵活性和高存储容限。

9. 发明申请

WO2013012271A3 METHOD FOR PREPARING LIGHT ABSORPTION LAYER FOR SOLAR CELL, SOLAR CELL INCLUDING LIGHT ABSORPTION LAYER, AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：用于太阳能电池，包括光吸收层的太阳能电池制备光吸收层的方法及其制造方法
公开(公告)号：WO2013012271A3
公开(公告)日：2013-04-04
申请号：PCT/KR2012005783
申请日：2012-07-19
申请人： IUCF HYU , KIM TAE WHAN , CHOO DONG CHUL , KIM DAE HUN
发明人： KIM TAE WHAN , CHOO DONG CHUL , KIM DAE HUN
IPC分类号： H01L31/042 , H01L31/0236 , H01L31/18
CPC分类号： H01L51/0007 , B82Y10/00 , H01L51/0036 , H01L51/0037 , H01L51/0046 , H01L51/0085 , H01L51/4253 , H01L51/426 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： Provided are a method for preparing a light absorption layer for a solar cell, a solar cell including the light absorption layer, and a manufacturing method thereof.The method for preparing a light absorption layer for a solar cell can increase the transport efficiency of charges moving to positive and negative electrodes through the reduction of exciton recombination by spontaneously forming nano aggregates due to a solubility difference of a light absorption material in a good solvent and a poor solvent. In addition, the solar cell can improve photocurrent and photoelectric conversion efficiency by increasing the area of a bonded interface between the light absorption layer and an electron transport layer through the formation of an uneven structure on the surface of the light absorption layer due to the arrangement of the nano aggregates. Furthermore, the method for manufacturing the solar cell can simply and easily manufacture a large-sized high efficiency solar cell using a solution process.
摘要翻译：提供一种制备太阳能电池用光吸收层的方法，包括该光吸收层的太阳能电池及其制造方法。制备太阳能电池用光吸收层的方法可提高电荷移动的输送效率通过由于光吸收材料在良溶剂和不良溶剂中的溶解度差异而自发形成纳米聚集体而通过还原激子复合而形成正极和负极。此外，太阳能电池可以通过在光吸收层的表面上由于形成不均匀结构而增加光吸收层和电子传输层之间的键合界面的面积来提高光电流和光电转换效率的纳米骨料。此外，制造太阳能电池的方法可以简单且容易地制造使用溶液工艺的大型高效率太阳能电池。

10. 发明申请

WO2013032191A2 NON-VOLATILE POLYMER MEMORY DEVICE INCLUDING A BUFFER LAYER, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：包含缓冲层的非挥发性聚合物存储器装置及其制造方法
公开(公告)号：WO2013032191A2
公开(公告)日：2013-03-07
申请号：PCT/KR2012006806
申请日：2012-08-27
申请人： IUCF HYU , KIM TAE WHAN , SON JUNG MIN
发明人： KIM TAE WHAN , SON JUNG MIN
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： G11C13/0016 , G11C2213/15 , G11C2213/51 , H01L51/0037 , H01L51/0591
摘要： The present invention relates to a non-volatile polymer memory device, and to a method for manufacturing same, and more particularly, to a non-volatile polymer memory device, and to a method for manufacturing same, wherein the device comprises: a substrate; a lower electrode formed on the substrate; a buffer layer formed on the lower electrode; a PEDOT:PSS thin film layer formed on the buffer layer; and an upper electrode formed on the PEDOT:PSS thin film layer. The non-volatile memory device of the present invention has the buffer layer inserted between the lower electrode and the PEDOT:PSS thin film layer, thereby exhibiting the effects of preventing oxide film formation between the lower electrode and the PEDOT:PSS thin film layer and causing the upper surface of the PEDOT:PSS thin film layer to have a uniform roughness despite being manufactured using a flexible substrate. Therefore, the flexibility and high memory margin of a PEDOT:PSS memory device can be maintained.
摘要翻译：非易失性聚合物存储器件及其制造方法技术领域本发明涉及一种非易失性聚合物存储器件及其制造方法，更具体地涉及一种非易失性聚合物存储器件及其制造方法，其中该器件包括：衬底; 形成在基板上的下部电极; 形成在下电极上的缓冲层; 在缓冲层上形成的PEDOT：PSS薄膜层; 以及在PEDOT：PSS薄膜层上形成的上电极。本发明的非易失性存储器件具有在下电极和PEDOT：PSS薄膜层之间插入的缓冲层，由此表现出防止在下电极和PEDOT：PSS薄膜层之间形成氧化膜的作用;以及尽管使用柔性衬底制造，但是导致PEDOT：PSS薄膜层的上表面具有均匀的粗糙度。因此，可以保持PEDOT：PSS存储设备的灵活性和高存储容量。

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