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    • 1. 发明申请
    • TOUCH SCREEN PANEL AND IMAGE DISPLAY DEVICE INCLUDING SAME
    • 触摸屏面板和图像显示装置,包括它们
    • WO2012070834A2
    • 2012-05-31
    • PCT/KR2011008909
    • 2011-11-22
    • IUCF HYUKIM TAE WHANHAN GYU WANPARK SU HYEONG
    • KIM TAE WHANHAN GYU WANPARK SU HYEONG
    • G06F3/044
    • G06F3/041G06F3/044G06F2203/04111
    • The present invention relates to a touch screen panel and to an image display device including same. The touch screen panel comprises: a first sensing wire pattern layer in which a plurality of first sensing wire pattern lines are formed in a first diagonal direction; a second sensing wire pattern layer in which a plurality of second sensing wire pattern lines are formed in a second diagonal direction so as to form a preset angle with the first sensing wires; and an insulation layer for providing insulation between the 1st sensing wire pattern layer and the 2nd sensing wire pattern layer. Since capacitive touch sensing wire pattern lines are disposed diagonally with a certain angle therebetween, the number of wires arranged on the major axis of the bezel of the touch screen panel can be reduced when compared to the resolution of touch screen panels of prior art in which the arrangement is perpendicular.
    • 触摸屏面板技术领域本发明涉及触摸屏面板及其构成的图像显示装置。 触摸屏面板包括:第一感测线图案层,其中多个第一感测线图案线在第一对角线方向上形成; 第二感测线图案层,其中多个第二感测线图案线形成在第二对角线方向上以与第一感测线形成预设角度; 以及用于在第一感测线图案层和第二感测线图案层之间提供绝缘的绝缘层。 由于电容式触摸感测线图案线以对角线设置在其间具有一定的角度,所以与现有技术的触摸屏面板的分辨率相比,布置在触摸屏面板的边框的长轴上的线数可以减少,其中 排列垂直。
    • 2. 发明申请
    • METHOD FOR DETECTING TOUCH POSITION OF TOUCH SCREEN AND TOUCH SCREEN USING SAME
    • 用于检测触摸屏的触摸位置和触摸屏的方法
    • WO2012093873A2
    • 2012-07-12
    • PCT/KR2012000127
    • 2012-01-05
    • IUCF HYUKIM TAE WHANRYU JU TAEPARK SU HYEONG
    • KIM TAE WHANRYU JU TAEPARK SU HYEONG
    • G06F3/03G06F3/041
    • G06F3/041G06F3/0416G06F3/044
    • Disclosed are a method for detecting a touch position of a touch screen and the touch screen using the same. A method for detecting a touch position on a touch screen comprises the steps of: detecting a touched touch screen block among touch screen blocks by using signals that are generated from at least one touch sensor among touch sensors, which are included in a plurality of touch screen blocks divided on an area of the touch screen; and detecting a touch position in the detected touch screen block on the basis of a signal of a touch sensor which is included in the detected touch screen block. Thus, compared to an existing method of processing a signal by reading measurement values of all measurement sensors, the invention enables fast signal processing, thereby reducing measurement signal processing time for measuring a touch position of a touch screen.
    • 公开了一种用于检测触摸屏和使用其的触摸屏的触摸位置的方法。 一种用于检测触摸屏上的触摸位置的方法,包括以下步骤:通过使用包括在多个触摸中的触摸传感器中的至少一个触摸传感器产生的信号来检测触摸屏块中触摸的触摸屏块 屏幕块分割在触摸屏的一个区域上; 并且根据检测到的触摸屏块中包含的触摸传感器的信号来检测检测到的触摸屏块中的触摸位置。 因此,与通过读取所有测量传感器的测量值来处理信号的现有方法相比,本发明实现了快速信号处理,从而减少了用于测量触摸屏的触摸位置的测量信号处理时间。
    • 8. 发明申请
    • NON-VOLATILE POLYMER MEMORY DEVICE INCLUDING A BUFFER LAYER, AND METHOD FOR MANUFACTURING SAME
    • 包含缓冲层的非易失性聚合物存储器件及其制造方法
    • WO2013032191A3
    • 2013-04-25
    • PCT/KR2012006806
    • 2012-08-27
    • IUCF HYUKIM TAE WHANSON JUNG MIN
    • KIM TAE WHANSON JUNG MIN
    • H01L27/115H01L21/8247
    • G11C13/0016G11C2213/15G11C2213/51H01L51/0037H01L51/0591
    • The present invention relates to a non-volatile polymer memory device, and to a method for manufacturing same, and more particularly, to a non-volatile polymer memory device, and to a method for manufacturing same, wherein the device comprises: a substrate; a lower electrode formed on the substrate; a buffer layer formed on the lower electrode; a PEDOT:PSS thin film layer formed on the buffer layer; and an upper electrode formed on the PEDOT:PSS thin film layer. The non-volatile memory device of the present invention has the buffer layer inserted between the lower electrode and the PEDOT:PSS thin film layer, thereby exhibiting the effects of preventing oxide film formation between the lower electrode and the PEDOT:PSS thin film layer and causing the upper surface of the PEDOT:PSS thin film layer to have a uniform roughness despite being manufactured using a flexible substrate. Therefore, the flexibility and high memory margin of a PEDOT:PSS memory device can be maintained.
    • 本发明涉及一种非挥发性聚合物存储装置及其制造方法,更具体地涉及一种非挥发性聚合物存储装置及其制造方法,其中该装置包括:一基板; 形成在所述基板上的下电极; 形成在下电极上的缓冲层; PEDOT:形成在缓冲层上的PSS薄膜层; 以及形成在PEDOT:PSS薄膜层上的上电极。 本发明的非易失性存储器件具有插入在下电极和PEDOT:PSS薄膜层之间的缓冲层,从而表现出防止下电极和PEDOT:PSS薄膜层和 尽管使用柔性基板制造,但是使PEDOT:PSS薄膜层的上表面具有均匀的粗糙度。 因此,可以保持PEDOT:PSS存储器件的灵活性和高存储容限。
    • 10. 发明申请
    • NON-VOLATILE POLYMER MEMORY DEVICE INCLUDING A BUFFER LAYER, AND METHOD FOR MANUFACTURING SAME
    • 包含缓冲层的非挥发性聚合物存储器装置及其制造方法
    • WO2013032191A2
    • 2013-03-07
    • PCT/KR2012006806
    • 2012-08-27
    • IUCF HYUKIM TAE WHANSON JUNG MIN
    • KIM TAE WHANSON JUNG MIN
    • H01L27/115H01L21/8247
    • G11C13/0016G11C2213/15G11C2213/51H01L51/0037H01L51/0591
    • The present invention relates to a non-volatile polymer memory device, and to a method for manufacturing same, and more particularly, to a non-volatile polymer memory device, and to a method for manufacturing same, wherein the device comprises: a substrate; a lower electrode formed on the substrate; a buffer layer formed on the lower electrode; a PEDOT:PSS thin film layer formed on the buffer layer; and an upper electrode formed on the PEDOT:PSS thin film layer. The non-volatile memory device of the present invention has the buffer layer inserted between the lower electrode and the PEDOT:PSS thin film layer, thereby exhibiting the effects of preventing oxide film formation between the lower electrode and the PEDOT:PSS thin film layer and causing the upper surface of the PEDOT:PSS thin film layer to have a uniform roughness despite being manufactured using a flexible substrate. Therefore, the flexibility and high memory margin of a PEDOT:PSS memory device can be maintained.
    • 非易失性聚合物存储器件及其制造方法技术领域本发明涉及一种非易失性聚合物存储器件及其制造方法,更具体地涉及一种非易失性聚合物存储器件及其制造方法,其中该器件包括:衬底; 形成在基板上的下部电极; 形成在下电极上的缓冲层; 在缓冲层上形成的PEDOT:PSS薄膜层; 以及在PEDOT:PSS薄膜层上形成的上电极。 本发明的非易失性存储器件具有在下电极和PEDOT:PSS薄膜层之间插入的缓冲层,由此表现出防止在下电极和PEDOT:PSS薄膜层之间形成氧化膜的作用;以及 尽管使用柔性衬底制造,但是导致PEDOT:PSS薄膜层的上表面具有均匀的粗糙度。 因此,可以保持PEDOT:PSS存储设备的灵活性和高存储容量。