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1. 发明申请

WO2009104870A2 MEMORY DEVICE USING CARBON NANOTUBES ATTACHED NANOPARTICLES THERETO AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：使用碳纳米管附着在纳米颗粒上的存储装置及其制造方法
公开(公告)号：WO2009104870A2
公开(公告)日：2009-08-27
申请号：PCT/KR2009/000234
申请日：2009-01-16
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY , KIM, Tae-Whan , FUSHAN, Li , SON, Dong-Ick , KIM, Sang-Wook , JUNG, Jae-Hoon
发明人： KIM, Tae-Whan , FUSHAN, Li , SON, Dong-Ick , KIM, Sang-Wook , JUNG, Jae-Hoon
IPC分类号： H01L27/115
CPC分类号： H01L51/0049 , B82Y10/00 , G11C13/025 , H01L27/2472 , H01L45/10 , H01L45/1233 , H01L45/14 , H01L45/1608 , H01L51/0591
摘要： Provided are a memory device using carbon nanotubes (CNTs) and a method of fabricating the same. The memory device includes a substrate, a first electrode formed on the substrate, a charge trapping layer formed on the first electrode and comprised of carbon nanotubes (CNTs) to which nanoparticles are attached, and a second electrode formed on the charge trapping layer. The memory device is a new device which uses a structure in which the nanoparticles are attached to the surface of the CNTs to store a state.
摘要翻译：提供了一种使用碳纳米管（CNT）的存储器件及其制造方法。所述存储器件包括衬底，形成在所述衬底上的第一电极，形成在所述第一电极上并由附着有纳米颗粒的碳纳米管（CNT）组成的电荷俘获层以及形成在所述电荷俘获层上的第二电极。存储器件是一种新型器件，其使用纳米颗粒附着到CNT表面以存储状态的结构。

2. 发明申请

WO2009061134A1 METHOD OF FABRICATING SOLAR CELL UTILIZING SEMICONDUCTOR NANOPARTICLES EMBEDDED IN POLYMER LAYER 审中-公开
标题翻译：利用嵌入在聚合物层中的半导体纳米粒子制备太阳能电池的方法
公开(公告)号：WO2009061134A1
公开(公告)日：2009-05-14
申请号：PCT/KR2008/006533
申请日：2008-11-06
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY , KIM, Tae-Whan , KIM, Young-Ho , FUSHAN, Li , JUNG, Jae-Hoon
发明人： KIM, Tae-Whan , KIM, Young-Ho , FUSHAN, Li , JUNG, Jae-Hoon
IPC分类号： H01L31/042
CPC分类号： H01L31/03529 , B82Y20/00 , H01L51/0037 , H01L51/0042 , H01L51/4233 , H01L51/426 , H01L2251/308 , Y02E10/549 , Y02P70/521
摘要： Provided is a method of fabricating a solar cell utilizing semiconductor nanoparticles embedded in a polymer layer. The method includes: forming anodes on a substrate; a semiconductor raw material layer on the anodes; spin coating a polymer precursor layer on the semiconductor raw material layer; forming semiconductor nanoparticles from the semiconductor raw material layer while a polymer layer is formed by performing heat treatment on the polymer precursor layer, thereby forming a photoelectro-motive force layer made of the polymer layer in which the nanoparticles are embedded; and forming cathodes on the photoelectro-motive force layer. Each layer excluding electrodes and nanoparticles in a solar cell is formed of polymer with low price so that a device can be fast and simply fabricated and various nanoparticles can be formed according to a semiconductor raw material to be deposited during a solar cell fabrication process. In addition, the size and density of the nanoparticles formed according to heat treatment conditions can be easily adjusted so that efficiency of a photoelectro-motive force of the solar cell can be optimized according to an operating environment.
摘要翻译：提供了利用嵌入聚合物层中的半导体纳米颗粒来制造太阳能电池的方法。该方法包括：在基板上形成阳极; 阳极上的半导体原料层; 在半导体原料层上旋涂聚合物前体层; 在通过对聚合物前体层进行热处理而形成聚合物层的同时从半导体原料层形成半导体纳米颗粒，从而形成由其中嵌入纳米颗粒的聚合物层制成的光电驱动层; 并在光电驱动层上形成阴极。除太阳能电池中的电极和纳米颗粒之外的每个层均由低价格的聚合物形成，使得可以快速简单地制造器件，并且可以根据要在太阳能电池制造工艺中沉积的半导体原料形成各种纳米粒子。此外，根据热处理条件形成的纳米颗粒的尺寸和密度可以容易地调节，从而可以根据操作环境优化太阳能电池的光电动势的效率。

3. 发明申请

WO2009038256A1 MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：存储器件及其制造方法
公开(公告)号：WO2009038256A1
公开(公告)日：2009-03-26
申请号：PCT/KR2008/000718
申请日：2008-02-05
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY , KIM, Tae-Whan , FUSHAN, Li , JUNG, Jae-Hoon
发明人： KIM, Tae-Whan , FUSHAN, Li , JUNG, Jae-Hoon
IPC分类号： H01L27/115
CPC分类号： G11C13/025 , B82Y10/00 , H01L45/10 , H01L45/1233 , H01L45/1253 , H01L45/141 , H01L45/16 , H01L45/1608
摘要： Provided are a memory device employing fullerene as a flexible electrode and method of fabricating the same. The memory device includes first and second electrodes each formed of a fullerene thin film, and a nanoparticle layer between the first and second electrodes configured to trap and emit electrons. If a flexible and light substrate such as a plastic substrate instead of an inorganic substrate such as a Si substrate is used, flexibility and portability of electronic equipment can be improved. In addition, the memory device is fabricated using only a spin-coating process, thereby reducing production cost and simplifying the fabricating method.
摘要翻译：提供了使用富勒烯作为柔性电极的存储器件及其制造方法。存储器件包括各自由富勒烯薄膜形成的第一和第二电极以及配置成捕获和发射电子的第一和第二电极之间的纳米颗粒层。如果使用诸如塑料基板的柔性和轻质基板而不是诸如Si基板的无机基板，则可以提高电子设备的灵活性和便携性。此外，仅使用旋涂工艺制造存储器件，从而降低生产成本并简化制造方法。

4. 发明申请

WO2009044963A1 MEMORY DEVICE USING CARBON NANOTUBE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：使用碳纳米管的存储器件及其制造方法
公开(公告)号：WO2009044963A1
公开(公告)日：2009-04-09
申请号：PCT/KR2008/000717
申请日：2008-02-05
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY , KIM, Tae-Whan , KIM, Bong-Jun , LEE, Dong-Ik , JUNG, Jae-Hoon
发明人： KIM, Tae-Whan , KIM, Bong-Jun , LEE, Dong-Ik , JUNG, Jae-Hoon
IPC分类号： H01L27/115
CPC分类号： H01L51/0591 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/35 , H01L29/42332 , H01L51/0048
摘要： Provided are a memory device using a carbon nanotube and a method of fabricating the same. The memory device includes a substrate, a gate dielectric layer formed on the substrate, a charge-trapping layer formed on the gate dielectric layer and formed of a carbon nanotube, a source and a drain formed in the substrate at both sides of the charge-trapping layer, and electrodes formed on the charge-trapping layer, the source, and the drain, respectively.
摘要翻译：提供了使用碳纳米管的存储器件及其制造方法。存储器件包括：衬底，形成在衬底上的栅极电介质层，形成在栅极电介质层上并由碳纳米管形成的电荷俘获层，形成于基底中的电荷 - 捕获层和形成在电荷捕获层，源极和漏极上的电极。

5. 发明申请

WO2009022774A1 METHOD OF FABRICATING NONVOLATILE ORGANIC BISTABLE MEMORY DEVICE INCLUDING POLYMER THIN FILM WITH NANOPARTICLES SERVING AS CHARGE TRAPPING REGION 审中-公开
标题翻译：使用作为电荷捕获区域服务的纳米颗粒制造非线性有机耐久性存储器件（包括聚合物薄膜）的方法
公开(公告)号：WO2009022774A1
公开(公告)日：2009-02-19
申请号：PCT/KR2008/000716
申请日：2008-02-05
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY , KIM, Tae-Whan , SON, Dong-Ick , LEEM, Jae-Hyeon , JUNG, Jae-Hoon
发明人： KIM, Tae-Whan , SON, Dong-Ick , LEEM, Jae-Hyeon , JUNG, Jae-Hoon
IPC分类号： H01L27/115
CPC分类号： H01L21/28273 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L27/115 , H01L51/0038 , H01L51/0042 , H01L51/0575 , H01L51/0591
摘要： Provided is a method of fabricating a nonvolatile organic bistable memory device including a polymer thin film with nanoparticles serving as a charge trapping region. The method includes forming a first electrode on a substrate, forming a nanoparticle layer on the first electrode, forming a polymer thin film on the nanoparticle layer, and forming a second electrode on the polymer thin film.
摘要翻译：提供一种制造包含具有纳米粒子的聚合物薄膜作为电荷俘获区域的非挥发性有机双稳态存储器件的方法。该方法包括在衬底上形成第一电极，在第一电极上形成纳米颗粒层，在纳米颗粒层上形成聚合物薄膜，并在聚合物薄膜上形成第二电极。

6. 发明申请

WO2009022773A1 FULLERENE-BASED FLASH MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：基于全能的闪速存储器件及其制造方法
公开(公告)号：WO2009022773A1
公开(公告)日：2009-02-19
申请号：PCT/KR2008/000715
申请日：2008-02-05
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY , KIM, Tae-Whan , KIM, Hyuk-Ju , HAM, Jung-Hoon , JUNG, Jae-Hoon
发明人： KIM, Tae-Whan , KIM, Hyuk-Ju , HAM, Jung-Hoon , JUNG, Jae-Hoon
IPC分类号： H01L27/115
CPC分类号： H01L21/28273 , B82Y10/00 , G11C13/0014 , G11C13/0016 , G11C13/025 , G11C16/0416 , H01L27/115 , H01L29/42332 , H01L29/7883 , H01L51/0038 , H01L51/0046 , H01L51/0575 , H01L51/0591
摘要： Provided are a flash memory device using fullerene dispersed in a dielectric polymer as a floating gate, and a method of fabricating the same. The flash memory device includes a semiconductor substrate, a stack structure disposed on the semiconductor substrate and formed of a dielectric polymer with fullerene dispersed, a source and a drain disposed in the semiconductor substrate at both sides of the stack structure, and a control gate disposed on the stack structure. Herein, the stack structure includes a tunneling dielectric layer formed of the dielectric polymer under the fullerene, a floating gate formed of the fullerene, and a gate dielectric layer formed of the dielectric polymer over the fullerene.
摘要翻译：提供了使用分散在介电聚合物中的富勒烯作为浮动栅极的闪存器件及其制造方法。闪速存储器件包括半导体衬底，堆叠结构，其设置在半导体衬底上，由具有富勒烯分散的介电聚合物形成，源极和漏极设置在堆叠结构的两侧的半导体衬底中;以及控制栅极，堆栈结构。这里，堆叠结构包括由富勒烯下的电介质聚合物形成的隧道电介质层，由富勒烯形成的浮栅，以及由富勒烯构成的介电聚合物形成的栅介质层。

7. 发明申请

WO2004086215A2 LIGHT PEN 审中-公开
标题翻译：光笔
公开(公告)号：WO2004086215A2
公开(公告)日：2004-10-07
申请号：PCT/KR2004/000639
申请日：2004-03-24
申请人： SAMSUNG ELECTRONICS CO., LTD. , CHO, Jong-Whan , PARK, Sang-Jin , PARK, Won-Sang , UH, Kee-Han , KIM, Hyung-Guel , JUNG, Jae-Hoon
发明人： CHO, Jong-Whan , PARK, Sang-Jin , PARK, Won-Sang , UH, Kee-Han , KIM, Hyung-Guel , JUNG, Jae-Hoon
IPC分类号： G06F3/033
CPC分类号： G06F3/03545
摘要： A photo detective LCD device includes a light pen. The light pen includes a body, a driving pulse generating module and a light generating module. The body has a pen shape, and an end of the body includes an opening through which light exits. The driving pulse generating module is disposed in the body and generates first and second driving power pulses having first and second frequencies, respectively. The light generating module generates first and second light in response to the first and second driving power pulses, respectively. The first and second light flickers in a third frequency and a fourth frequency, respectively. The power consumption is reduced, and the brightness of sensing light is enhanced. The light pen generates light having at least two different frequencies, and the display device recognizes light generated from the light pen effectively. Therefore, the display device may operate without failure.
摘要翻译：一个照片侦探LCD装置包括一个光笔。光笔包括主体，驱动脉冲发生模块和发光模块。身体具有笔形，并且身体的一端包括光离开的开口。驱动脉冲发生模块设置在主体中，分别产生具有第一和第二频率的第一和第二驱动功率脉冲。光产生模块分别响应于第一和第二驱动功率脉冲产生第一和第二光。第一和第二光分别以第三频率和第四频率闪烁。功耗降低，感光的亮度提高。光笔产生具有至少两个不同频率的光，并且显示装置有效地识别从光笔产生的光。因此，显示装置可以无故障地运行。

8. 发明申请

WO2002088446A1 A KNITTED FABRIC HAVING AN EXCELLENT WASH FASTNESS AND LIGHT FASTNESS, AND A PROCESS OF PREPARING FOR THE SAME 审中-公开
标题翻译：具有优异洗涤速度和光弹性的针织织物及其制备方法
公开(公告)号：WO2002088446A1
公开(公告)日：2002-11-07
申请号：PCT/KR2002/000776
申请日：2002-04-26
申请人： KOLON INDUSTRIES, INC , JUNG, Sang-Woo , JUNG, Jae-Hoon , YOON, Joon-Young
发明人： JUNG, Sang-Woo , JUNG, Jae-Hoon , YOON, Joon-Young
IPC分类号： D04B1/14
CPC分类号： D04B21/16 , D04B1/16
摘要： The present invention discloses a knitted fabric having excellent wash fastness and light fastness, and a process of preparing for the same. More particularly, the knitted fabric of the present invention has a ultra fine yarn including a dope dyed component selected from the group consisting of carbon black, pigments and dyestuffs on the face and/or back and has a wash fastness of more than level 2-3 and a light fastness of more than level (5). In addition, in the process of the present invention, a sea-island type conjugate fiber is used in which a dope dyed component such as carbon black or the like is contained in a fiber forming component as a face yarn and/or back yarn. The knitted fabric of the present invention is used for materials of artificial leathers or ladies' clothes.
摘要翻译：本发明公开了一种耐洗涤牢度和耐光性优异的针织物及其制备方法。更具体地说，本发明的针织物具有超细纱线，该超细纱线包括选自碳黑，颜料和表面和/或背面上的染料的掺杂染色成分，并且具有多于2- 3，耐光性高于（5）级。此外，在本发明的方法中，使用海岛型复合纤维，其中在作为面纱和/或背纱的纤维成形组分中包含诸如炭黑等的涂料染色组分。本发明的针织物用于人造皮革或女士服装的材料。

9. 发明申请

WO2008088167A1 ELECTROLYTE COMPRISING EUTECTIC MIXTURE AND SECONDARY BATTERY USING THE SAME 审中-公开
标题翻译：包含保护性混合物的电解质和使用其的二次电池
公开(公告)号：WO2008088167A1
公开(公告)日：2008-07-24
申请号：PCT/KR2008/000272
申请日：2008-01-16
申请人： LG CHEM, LTD. , LEE, Byoung-Bae , CHOI, Shin-Jung , OH, Jae-Seung , PARK, Ji-Won , HAN, Young-Kyu , JUNG, Jae-Hoon , PARK, Jae-Duk
发明人： LEE, Byoung-Bae , CHOI, Shin-Jung , OH, Jae-Seung , PARK, Ji-Won , HAN, Young-Kyu , JUNG, Jae-Hoon , PARK, Jae-Duk
IPC分类号： H01M10/40
CPC分类号： H01M10/0568 , H01M10/0565 , H01M10/0567
摘要： Disclosed is an electrolyte for a secondary battery, comprising an eutectic mixture consisting of: (a) am amide group-containing compound with at least one EDG introduced into the N-position thereof; and (b) an ionizable lithium salt. Also, provided are a secondary battery comprising such an electrolyte, and a method of adjusting an electrochemical stability window of an eutectic mixture consisting of an amide group-containing compound and a lithium salt by regulating electron donating properties of at least one substituent group introduced into the N-position of the amide group-containing compound.
摘要翻译：公开了一种用于二次电池的电解质，其包含由以下组分组成的共晶混合物：（a）含酰胺基的化合物与引入其N-位的至少一种EDG; 和（b）可电离的锂盐。此外，提供了包含这种电解质的二次电池，以及通过调节引入至少一个取代基的给电子性质来调节由含酰胺基的化合物和锂盐组成的共晶混合物的电化学稳定性窗口的方法含酰胺基的化合物的N-位。

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