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    • 5. 发明申请
    • HIGH DENSITY, HARD TIP ARRAYS
    • 高密度,硬尖端阵列
    • WO2012158838A2
    • 2012-11-22
    • PCT/US2012038206
    • 2012-05-16
    • NANOINK INCHENNING ALBERT KSHILE RAYMOND ROGERFRAGALA JOSEPH SAMRO NABIL AHAAHEIM JASON R
    • HENNING ALBERT KSHILE RAYMOND ROGERFRAGALA JOSEPH SAMRO NABIL AHAAHEIM JASON R
    • B81C99/00
    • B81C99/009B82Y10/00B82Y40/00G03F7/0002Y10T156/10Y10T156/1052
    • Improved high density, hard tip arrays for use in patterning including an article comprises a handle chip; and a silicon nitride membrane bonded to at least a portion of the handle chip. The silicon nitride membrane comprises an array of a plurality of silicon nitride tips extending directly from a surface of the silicon nitride membrane. A method comprises preparing a silicon nitride membrane comprising an array of a plurality of silicon nitride tips extending directly from a surface of the silicon nitride membrane; preparing a handle wafer; and bonding the silicon nitride membrane to at least a portion of the handle wafer to form an bonded tip array. Another article comprises an elastomeric backing member; and an array of tips disposed on the elastomeric backing member. The tips of the array comprise a refractory material. Another method comprises providing at least one mold for a tip array comprising a plurality of mold regions for tips; filling or coating the mold regions for tips with a refractory material, to form an array of tips comprising a refractory material; and disposing a liquid elastomer precursor material in contact with the refractory material of the tips.
    • 用于包括制品的图案化中的改进的高密度硬尖头阵列包括手柄芯片; 以及结合到手柄芯片的至少一部分的氮化硅膜。 氮化硅膜包括直接从氮化硅膜的表面延伸的多个氮化硅尖端的阵列。 一种方法包括制备氮化硅膜,其包括直接从氮化硅膜的表面延伸的多个氮化硅尖端的阵列; 准备一个处理晶圆; 以及将所述氮化硅膜结合到所述处理晶片的至少一部分以形成接合的尖端阵列。 另一制品包括弹性体背衬构件; 以及布置在弹性体背衬构件上的尖端阵列。 阵列的尖端包括耐火材料。 另一种方法包括提供至少一个用于尖端阵列的模具,其包括用于尖端的多个模具区域; 用耐火材料填充或涂覆用于尖端的模具区域,以形成包括耐火材料的尖端阵列; 并且将液体弹性体前体材料设置成与尖端的耐火材料接触。