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1. 发明申请

WO2010090779A2 METHODS FOR PREVENTING PRECIPITATION OF ETCH BYPRODUCTS DURING AN ETCH PROCESS AND/OR A SUBSEQUENT RINSE PROCESS 审中-公开
标题翻译：用于在蚀刻过程和/或后续冲洗过程中防止蚀刻产物的降解的方法
公开(公告)号：WO2010090779A2
公开(公告)日：2010-08-12
申请号：PCT/US2010/020086
申请日：2010-01-05
申请人： LAM RESEARCH , WAGNER, Mark, I. , DEYOUNG, James, P.
发明人： WAGNER, Mark, I. , DEYOUNG, James, P.
IPC分类号： H01L21/302 , H01L21/306
CPC分类号： H01L21/02068
摘要： Methods for processing a microelectronic topography include selectively etching a layer of the topography using an etch solution which includes a fluid in a supercritical or liquid state. In some embodiments, the etch process may include introducing a fresh composition of the etch solution into a process chamber while simultaneously venting the chamber to inhibit the precipitation of etch byproducts. A rinse solution including the fluid in a supercritical or liquid state may be introduced into the chamber subsequent to the etch process. In some cases, the rinse solution may include one or more polar cosolvents, such as acids, polar alcohols, and/or water mixed with the fluid to help inhibit etch byproduct precipitation. In addition or alternatively, at least one of the etch solution and rinse solution may include a chemistry which is configured to modify dissolved etch byproducts within an ambient of the topography to inhibit etch byproduct precipitation.
摘要翻译：用于处理微电子拓扑的方法包括使用包括超临界或液态的流体的蚀刻溶液来选择性地蚀刻地形图。在一些实施例中，蚀刻工艺可以包括将蚀刻溶液的新鲜组合物引入处理室中，同时使该室排气以抑制蚀刻副产物的沉淀。包含超临界或液态的流体的冲洗溶液可以在蚀刻过程之后引入腔室。在一些情况下，漂洗溶液可以包括一种或多种极性助溶剂，例如酸，极性醇和/或与流体混合的水，以帮助抑制蚀刻副产物沉淀。另外或替代地，蚀刻溶液和冲洗溶液中的至少一个可以包括化学物质，其被配置为在局部环境中修饰溶解的蚀刻副产物以抑制蚀刻副产物沉淀。

2. 发明申请

WO2005072095A2 METHOD OF TREATING MICROELECTRONIC SUBSTRATES 审中-公开
标题翻译：微电子基板处理方法
公开(公告)号：WO2005072095A2
公开(公告)日：2005-08-11
申请号：PCT/US2004/042001
申请日：2004-12-15
申请人： MICELL TECHNOLOGIES, INC. , DEYOUNG, James, P. , MCCLAIN, James, B. , GROSS, Stephen, M. , TAYLOR, Doug , WAGNER, Mark, I. , BRAINARD, David
发明人： DEYOUNG, James, P. , MCCLAIN, James, B. , GROSS, Stephen, M. , TAYLOR, Doug , WAGNER, Mark, I. , BRAINARD, David
IPC分类号： H01L21/288 , H01L21/3205 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/32051 , H01L21/283 , H01L21/288 , H01L21/76814 , H01L21/76843 , H01L21/76871
摘要： A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the coating reagent comprising a reactive group coupled to a coordinating group, with the coordinating group having a metal bound thereto, so that the metal is deposited on the dielectric surface portion to produce a surface portion treated with a metal.
摘要翻译：一种处理半导体衬底的电介质表面部分的方法，包括以下步骤：（a）提供具有电介质表面部分的半导体衬底; 然后（b）用涂层试剂处理所述电介质表面部分，所述涂覆试剂包含与配位基团偶联的反应基团，所述配位基团与其结合金属，使得金属沉积在电介质表面部分上产生用金属处理的表面部分。

3. 发明申请

WO2004070776A2 METHODS FOR TRANSFERRING SUPERCRITICAL FLUIDS IN MICROELECTRONIC AND OTHER INDUSTRIAL PROCESSES 审中-公开
标题翻译：在微电子和其他工业过程中传输超临界流体的方法
公开(公告)号：WO2004070776A2
公开(公告)日：2004-08-19
申请号：PCT/US2003/040155
申请日：2003-12-08
申请人： MICELL TECHNOLOGIES, INC. , MCCLAIN, James, B. , DEYOUNG, James, P. , GROSS, Stephen, M. , WAGNER, Mark, I.
发明人： MCCLAIN, James, B. , DEYOUNG, James, P. , GROSS, Stephen, M. , WAGNER, Mark, I.
IPC分类号： H01L
CPC分类号： B08B7/0021 , B05D1/18 , B05D2401/90 , H01L21/02063 , H01L21/02101 , H01L21/67017 , H01L21/67028 , Y10T137/0324
摘要： A method of displacing a supercritical fluid from a pressure vessel (e.g., in a microelectronic manufacturing process), comprises the steps of: providing an enclosed pressure vessel containing a first supercritical fluid (said supercritical fluid preferably comprising carbon dioxide); adding a second fluid (typically also a supercritical fluid) to said vessel, with said second fluid being added at a pressure greater than the pressure of the first supercritical fluid, and with said second fluid having a density less than that of the first supercritical fluid; forming an interface between the first supercritical fluid and the second fluid; and displacing at least a portion of the first supercritical fluid from the vessel with the pressure of the second, preferably fluid while maintaining the interface therebetween.
摘要翻译：从压力容器（例如，微电子制造工艺）中移出超临界流体的方法包括以下步骤：提供包含第一超临界流体（所述超临界流体优选包含二氧化碳）的封闭压力容器; 向所述容器中加入第二流体（通常也是超临界流体），其中所述第二流体以大于第一超临界流体的压力的压力加入，并且所述第二流体的密度小于第一超临界流体的密度 ; 在所述第一超临界流体和所述第二流体之间形成界面; 并且使第二超临界流体的至少一部分与第二流体（优选流体）的压力从容器移位，同时保持其间的界面。

4. 发明申请

WO0157303A9 METHODS FOR CARBON DIOXIDE DRY CLEANING WITH INTEGRATED DISTRIBUTION 审中-公开
标题翻译：用于二氧化碳干燥清洗与一体化分布的方法
公开(公告)号：WO0157303A9
公开(公告)日：2002-10-31
申请号：PCT/US0103545
申请日：2001-02-01
申请人： MICELL TECHNOLOGIES INC , MCCLAIN JAMES B , ROMACK TIMOTHY J , DEYOUNG JAMES P , LIENHART R BRADLEY , DESIMONE JOSEPH M , HUGGINS KENNETH L
发明人： MCCLAIN JAMES B , ROMACK TIMOTHY J , DEYOUNG JAMES P , LIENHART R BRADLEY , DESIMONE JOSEPH M , HUGGINS KENNETH L
IPC分类号： D06L1/02 , D06L1/04 , D06L1/08 , D06L1/10
CPC分类号： D06L1/02
摘要： The present invention provides a dry cleaning process that facilitates distribution of detergent and solvent and (optionally) facilitates recovery of cleaning by-products in conjunction with the cleaning of articles at a dry cleaning facility. The proces comprises the steps of: (a) receiving from a source a dry cleaning solvent at the dry cleaning facility, the solvent consisting essentially of carbon dioxide; (b) receiving a concentrated detergent formulation (preferably a liquid formulation) at the cleaning facility; (c) accepting from customers soiled articles to be cleaned at the cleaning facility; (d) mixing the dry cleaning solvent and the concentrated detergent formulation to provide a dry cleaning formulation comprised of from 30 or 40 to 99 percent by weight of carbon dioxide solvent; (e) cleaning the articles in a cleaning apparatus to produce cleaned articles; (f) at least periodically distilling the dry cleaning formulation to produce a still residue comprising surfactant and soil; and then (g) returning the cleaned articles to the customers. Optionally but preferably, the process further comprises the step of: (h) returning the still residue to a waste collector or reprocessor for suitable disposal.
摘要翻译：本发明提供了一种便于洗涤剂和溶剂的分配的干洗方法，并且（任选地）便于在干洗设施处清洁物品的同时回收清洁副产物。方法包括以下步骤：（a）在干洗设备处从干燥清洁设备处获得干洗溶剂，所述溶剂基本上由二氧化碳组成; （b）在清洁设施处接收浓缩洗涤剂配制剂（优选液体制剂）; （c）客户接受在清洁设施上清洁的污物; （d）混合干洗溶剂和浓缩洗涤剂配方以提供由30或40至99重量％的二氧化碳溶剂组成的干洗制剂; （e）清洁清洁设备中的物品以产生清洁物品; （f）至少定期蒸馏干洗制剂以产生包含表面活性剂和土壤的残余物; 然后（g）将清洁的物品送回顾客。可选地，但优选地，该方法还包括以下步骤：（h）将残余物返回到废物收集器或再处理器以进行适当处置。

5. 发明申请

WO0231253A3 DEVICE AND PROCESS FOR DRY-CLEANING PROCESS USING CARBON DIOXIDE AND A DIVIDED PRESSURE VESSEL 审中-公开
标题翻译：使用二氧化碳和分压压力容器进行干燥清洗工艺的装置和方法
公开(公告)号：WO0231253A3
公开(公告)日：2002-08-01
申请号：PCT/US0131507
申请日：2001-10-10
申请人： MICELL TECHNOLOGIES INC , WORM STEVE L , DEYOUNG JAMES P , MCCLAIN JAMES B , BRAINARD DAVID E
发明人： WORM STEVE L , DEYOUNG JAMES P , MCCLAIN JAMES B , BRAINARD DAVID E
IPC分类号： A23L27/10 , D06F43/00 , D06L1/08 , F17C1/00 , F17C5/00 , F17C7/00
CPC分类号： D06L1/08 , A23L27/11 , D06F43/00 , D06F43/081 , F17C1/00 , F17C1/005 , F17C5/00 , F17C7/00 , F17C2201/0109 , F17C2201/0171 , F17C2201/032 , F17C2201/035 , F17C2201/056 , F17C2203/0643 , F17C2205/0347 , F17C2205/0397 , F17C2221/013 , F17C2221/014 , F17C2221/017 , F17C2221/033 , F17C2221/035 , F17C2227/0157 , F17C2227/0383 , F17C2250/0408 , F17C2265/012 , F17C2270/02 , F17C2270/0518
摘要： Processing systems employing one or more divided pressure vessels (653) are described. These systems may allow for multiple solvent baths each having a different chemical composition to be stored and/or processed in a single pressure vessel (653) while maintaining the different chemical compositions of the multiple solvent baths. Thus, such systems employing one or more divided pressure vessels (653) may provide the improved operational efficiency of a carbon dioxide based system having multiple solvent baths while decreasing the capital costs that may be associated with such systems.
摘要翻译：描述了采用一个或多个分压的压力容器（653）的处理系统。这些系统可以允许具有不同化学组成的多个溶剂浴在单个压力容器（653）中储存和/或加工，同时保持多个溶剂浴的不同化学组成。因此，采用一个或多个分压的压力容器（653）的这种系统可以提供具有多个溶剂浴的具有二氧化碳的系统的改进的操作效率，同时减少可能与这种系统相关联的资本成本。

6. 发明申请

WO2010090779A3 METHODS FOR PREVENTING PRECIPITATION OF ETCH BYPRODUCTS DURING AN ETCH PROCESS AND/OR A SUBSEQUENT RINSE PROCESS 审中-公开
标题翻译：预防蚀刻过程中和/或后续冲洗过程中蚀刻副产品的方法
公开(公告)号：WO2010090779A3
公开(公告)日：2010-09-30
申请号：PCT/US2010020086
申请日：2010-01-05
申请人： LAM RES , WAGNER MARK I , DEYOUNG JAMES P
发明人： WAGNER MARK I , DEYOUNG JAMES P
IPC分类号： H01L21/302 , H01L21/306
CPC分类号： H01L21/02068
摘要： Methods for processing a microelectronic topography include selectively etching a layer of the topography using an etch solution which includes a fluid in a supercritical or liquid state. In some embodiments, the etch process may include introducing a fresh composition of the etch solution into a process chamber while simultaneously venting the chamber to inhibit the precipitation of etch byproducts. A rinse solution including the fluid in a supercritical or liquid state may be introduced into the chamber subsequent to the etch process. In some cases, the rinse solution may include one or more polar cosolvents, such as acids, polar alcohols, and/or water mixed with the fluid to help inhibit etch byproduct precipitation. In addition or alternatively, at least one of the etch solution and rinse solution may include a chemistry which is configured to modify dissolved etch byproducts within an ambient of the topography to inhibit etch byproduct precipitation.
摘要翻译：用于处理微电子形貌的方法包括使用包括处于超临界或液体状态的流体的蚀刻溶液来选择性地蚀刻形貌层。在一些实施例中，蚀刻工艺可以包括将新鲜的蚀刻溶液组合物引入到处理室中，同时通风室以抑制蚀刻副产物的沉淀。包括处于超临界或液体状态的流体的冲洗溶液可以在蚀刻过程之后被引入到腔室中。在一些情况下，冲洗溶液可以包括与流体混合的一种或多种极性助溶剂，例如酸，极性醇和/或水，以帮助抑制蚀刻副产物沉淀。另外或可选地，蚀刻溶液和冲洗溶液中的至少一种可以包括化学物质，该化学物质被配置为修改在形貌环境内的溶解的蚀刻副产物以抑制蚀刻副产物沉淀。

7. 发明申请

WO2010036575A3 METHODS AND SYSTEMS FOR PREVENTING FEATURE COLLAPSE DURING MICROELECTRONIC TOPOGRAPHY FABRICATION 审中-公开
标题翻译：用于防止微电子地形制造过程中的特征塌陷的方法和系统
公开(公告)号：WO2010036575A3
公开(公告)日：2010-06-03
申请号：PCT/US2009057490
申请日：2009-09-18
申请人： LAM RES CORP , WAGNER MARK I , DEYOUNG JAMES P , KROEKER TONY R
发明人： WAGNER MARK I , DEYOUNG JAMES P , KROEKER TONY R
IPC分类号： H01L21/302
CPC分类号： H01L21/31111 , H01L21/02068 , H01L21/31116
摘要： Methods and systems for preventing feature collapse subsequent to etching include adding a rinse liquid to a microelectronic topography having remnants of another rinse liquid arranged upon its surface and subsequently exposing the topography to a pressurized chamber including a fluid at or greater than critical pressure. The methods include flushing from the pressurized chamber liquid arranged upon the topography and, thereafter, venting the chamber in a manner sufficient to prevent liquid formation therein.
摘要翻译：用于防止蚀刻之后特征坍塌的方法和系统包括将冲洗液添加到具有布置在其表面上的另一冲洗液的残余物的微电子拓扑中，并且随后将该拓扑结构暴露于包括处于或高于临界压力的流体的加压室。该方法包括从设置在形貌上的加压室液体中冲洗，然后以足以防止其中形成液体的方式排出室。

8. 发明申请

WO2004070071A2 METHOD OF COATING MICROELECTRONIC SUBSTRATES 审中-公开
标题翻译：涂布微电子基板的方法
公开(公告)号：WO2004070071A2
公开(公告)日：2004-08-19
申请号：PCT/US2003/038324
申请日：2003-12-02
申请人： MICELL TECHNOLOGIES, INC. , DEYOUNG, James, P. , MCCLAIN, James, B. , GROSS, Stephen, M. , TAYLOR, Doug , WAGNER, Mark, I. , BRAINARD, David, E.
发明人： DEYOUNG, James, P. , MCCLAIN, James, B. , GROSS, Stephen, M. , TAYLOR, Doug , WAGNER, Mark, I. , BRAINARD, David, E.
IPC分类号： C23C
CPC分类号： H01L21/283 , B05D1/18 , B05D2401/90 , H01L21/28556 , H01L21/288 , H01L21/67028 , H01L28/65
摘要： A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.
摘要翻译：涂覆基材的方法包括以下步骤：（a）在密封容器中提供基材，所述基材具有表面部分; （b）用第一超临界流体至少部分地填充封闭的容器，使得所述第一超临界流体接触表面部分，第一超临界流体携带或包含涂层组分; 然后（c）向所述反应容器中加入单独的压缩气体气氛，使得在所述第一超临界流体和所述单独的压缩气体气氛之间形成边界，所述单独的压缩气体气氛的密度小于所述第一超临界流体; 然后（d）通过将所述单独的压缩气体气氛继续加入到所述容器中，使所述边界移动穿过所述表面部分并且将涂层组分的薄膜沉积在所述微电子衬底上，从而使所述第一超临界流体从所述容器移位。

9. 发明申请

WO2004046826A2 POSITIVE TONE LITHOGRAPHY IN CARBON DIOXIDE SOLVENTS 审中-公开
标题翻译：二氧化碳溶液中的积极色调
公开(公告)号：WO2004046826A2
公开(公告)日：2004-06-03
申请号：PCT/US0336670
申请日：2003-11-12
申请人： MICELL TECHNOLOGIES INC , MCCLAIN JAMES B , DEYOUNG JAMES P
发明人： MCCLAIN JAMES B , DEYOUNG JAMES P
IPC分类号： G03F20060101 , G03F7/00 , G03F7/32 , G03F7/36 , G03F
CPC分类号： G03F7/36 , G03F7/32 , G03F7/325 , G03F7/327
摘要： A method for carrying out positive tone lithography with a carbon dioxide solvent system is carried out by (a) providing a substrate having a polymer resist layer formed thereon; (b) exposing at least one portion of the polymer resist layer to radiant energy to form at least one light field region in the polymer resist layer; and then (c) contacting the polymer resist layer to a carbon dioxide solvent system, the solvent system preferably comprising a polar group, under conditions in which the at least one light field region is preferentially removed.
摘要翻译：通过（a）提供其上形成有聚合物抗蚀剂层的基材，进行用二氧化碳溶剂系统进行正色调光刻的方法; （b）将聚合物抗蚀剂层的至少一部分暴露于辐射能以在聚合物抗蚀剂层中形成至少一个光场区域; 然后（c）在其中优选除去所述至少一个光场区域的条件下，使所述聚合物抗蚀剂层与二氧化碳溶剂体系接触，所述溶剂体系优选包含极性基团。

10. 发明申请

WO2003084680A1 ENHANCED PROCESSING OF PERFORMANCE FILMS USING HIGH-DIFFUSIVITY PENETRANTS 审中-公开
标题翻译：使用高分辨率渗透剂对性能膜进行加强处理
公开(公告)号：WO2003084680A1
公开(公告)日：2003-10-16
申请号：PCT/US2003/009245
申请日：2003-03-26
申请人： MICELL TECHNOLOGIES, INC. , CARBONELL, Ruben , DESIMONE, Joseph, M. , MCCLAIN, James, B. , DEYOUNG, James, P.
发明人： CARBONELL, Ruben , DESIMONE, Joseph, M. , MCCLAIN, James, B. , DEYOUNG, James, P.
IPC分类号： B05D3/04
CPC分类号： H01L21/3105 , G03F7/168 , G03F7/265 , G03F7/38 , H01L21/31058
摘要： A method of reducing undesired topographic features, increasing film density, and/or increasing adhesion to an underlying substrate in a polymer film formed on a microelectronic substrate, comprises: (a) providing a microelectronic substrate, the substrate having a polymer film deposited thereon; (b) contacting the substrate to carbon dioxide (optionally containing additional ingredients such as cosolvents or chemical intermediates); and (c) elevating the pressure of the carbon dioxide to plasticize the polymer film and reduce undesired topographic features, increase film density, and/or increase adhesion of the film to the underlying substrate.
摘要翻译：包括：（a）提供微电子衬底，所述衬底具有沉积在其上的聚合物膜;以及（c）提供微电子衬底，所述衬底具有沉积在其上的聚合物膜; （b）将底物与二氧化碳接触（任选地含有另外的成分，例如助溶剂或化学中间体）; 和（c）提高二氧化碳的压力以塑化聚合物膜并减少不期望的形貌特征，增加膜密度和/或增加膜与下面的基底的粘附。

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