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1. 发明申请

WO2010090779A2 METHODS FOR PREVENTING PRECIPITATION OF ETCH BYPRODUCTS DURING AN ETCH PROCESS AND/OR A SUBSEQUENT RINSE PROCESS 审中-公开
标题翻译：用于在蚀刻过程和/或后续冲洗过程中防止蚀刻产物的降解的方法
公开(公告)号：WO2010090779A2
公开(公告)日：2010-08-12
申请号：PCT/US2010/020086
申请日：2010-01-05
申请人： LAM RESEARCH , WAGNER, Mark, I. , DEYOUNG, James, P.
发明人： WAGNER, Mark, I. , DEYOUNG, James, P.
IPC分类号： H01L21/302 , H01L21/306
CPC分类号： H01L21/02068
摘要： Methods for processing a microelectronic topography include selectively etching a layer of the topography using an etch solution which includes a fluid in a supercritical or liquid state. In some embodiments, the etch process may include introducing a fresh composition of the etch solution into a process chamber while simultaneously venting the chamber to inhibit the precipitation of etch byproducts. A rinse solution including the fluid in a supercritical or liquid state may be introduced into the chamber subsequent to the etch process. In some cases, the rinse solution may include one or more polar cosolvents, such as acids, polar alcohols, and/or water mixed with the fluid to help inhibit etch byproduct precipitation. In addition or alternatively, at least one of the etch solution and rinse solution may include a chemistry which is configured to modify dissolved etch byproducts within an ambient of the topography to inhibit etch byproduct precipitation.
摘要翻译：用于处理微电子拓扑的方法包括使用包括超临界或液态的流体的蚀刻溶液来选择性地蚀刻地形图。在一些实施例中，蚀刻工艺可以包括将蚀刻溶液的新鲜组合物引入处理室中，同时使该室排气以抑制蚀刻副产物的沉淀。包含超临界或液态的流体的冲洗溶液可以在蚀刻过程之后引入腔室。在一些情况下，漂洗溶液可以包括一种或多种极性助溶剂，例如酸，极性醇和/或与流体混合的水，以帮助抑制蚀刻副产物沉淀。另外或替代地，蚀刻溶液和冲洗溶液中的至少一个可以包括化学物质，其被配置为在局部环境中修饰溶解的蚀刻副产物以抑制蚀刻副产物沉淀。

2. 发明申请

WO2010090780A1 METHODS FOR PREVENTING PRECIPITATION OF ETCH BYPRODUCTS DURING AN ETCH PROCESS AND/OR A SUBSEQUENT RINSE PROCESS 审中-公开
标题翻译：预防蚀刻过程中和/或后续冲洗过程中蚀刻副产品的方法
公开(公告)号：WO2010090780A1
公开(公告)日：2010-08-12
申请号：PCT/US2010/020093
申请日：2010-01-05
申请人： LAM RESEARCH , WAGNER, Mark, I. , DEYOUNG, James, P.
发明人： WAGNER, Mark, I. , DEYOUNG, James, P.
IPC分类号： H01L21/306 , H01L21/302
CPC分类号： H01L21/76814 , H01L21/02068 , H01L21/02101 , H01L21/31111
摘要： Methods for processing a microelectronic topography include selectively etching a layer of the topography using an etch solution which includes a fluid in a supercritical or liquid state. In some embodiments, the etch process may include introducing a fresh composition of the etch solution into a process chamber while simultaneously venting the chamber to inhibit the precipitation of etch byproducts. A rinse solution including the fluid in a supercritical or liquid state may be introduced into the chamber subsequent to the etch process. In some cases, the rinse solution may include one or more polar cosolvents, such as acids, polar alcohols, and/or water mixed with the fluid to help inhibit etch byproduct precipitation. In addition or alternatively, at least one of the etch solution and rinse solution may include a chemistry which is configured to modify dissolved etch byproducts within an ambient of the topography to inhibit etch byproduct precipitation.
摘要翻译：用于处理微电子形貌的方法包括使用包括超临界或液体状态的流体的蚀刻溶液来选择性地蚀刻形貌层。在一些实施例中，蚀刻工艺可以包括将新鲜的蚀刻溶液组合物引入到处理室中，同时通风室以抑制蚀刻副产物的沉淀。包括处于超临界或液体状态的流体的冲洗溶液可以在蚀刻过程之后被引入到腔室中。在一些情况下，冲洗溶液可以包括与流体混合的一种或多种极性助溶剂，例如酸，极性醇和/或水，以帮助抑制蚀刻副产物沉淀。另外或可替代地，蚀刻溶液和冲洗溶液中的至少一种可以包括化学物质，其被配置为修改在形貌环境内的溶解的蚀刻副产物以抑制蚀刻副产物沉淀。

3. 发明申请

WO2010036575A2 METHODS AND SYSTEMS FOR PREVENTING FEATURE COLLAPSE DURING MICROELECTRONIC TOPOGRAPHY FABRICATION 审中-公开
标题翻译：微电子地层制造过程中预防特征的方法与系统
公开(公告)号：WO2010036575A2
公开(公告)日：2010-04-01
申请号：PCT/US2009/057490
申请日：2009-09-18
申请人： LAM RESEARCH CORPORATION , WAGNER, Mark, I. , DEYOUNG, James, P. , KROEKER, Tony, R.
发明人： WAGNER, Mark, I. , DEYOUNG, James, P. , KROEKER, Tony, R.
IPC分类号： H01L21/302
CPC分类号： H01L21/31111 , H01L21/02068 , H01L21/31116
摘要： Methods and systems for preventing feature collapse subsequent to etching include adding a rinse liquid to a microelectronic topography having remnants of another rinse liquid arranged upon its surface and subsequently exposing the topography to a pressurized chamber including a fluid at or greater than critical pressure. The methods include flushing from the pressurized chamber liquid arranged upon the topography and, thereafter, venting the chamber in a manner sufficient to prevent liquid formation therein.
摘要翻译：用于防止蚀刻后的特征崩溃的方法和系统包括将漂洗液体添加到具有布置在其表面上的另一冲洗液体残留物的微电子形貌，并随后将形貌暴露于包括大于或大于临界压力的流体的加压室。这些方法包括从设置在地形上的加压室液体冲洗，然后以足以防止其中形成液体的方式排出室。

4. 发明申请

WO2004070071A2 METHOD OF COATING MICROELECTRONIC SUBSTRATES 审中-公开
标题翻译：涂布微电子基板的方法
公开(公告)号：WO2004070071A2
公开(公告)日：2004-08-19
申请号：PCT/US2003/038324
申请日：2003-12-02
申请人： MICELL TECHNOLOGIES, INC. , DEYOUNG, James, P. , MCCLAIN, James, B. , GROSS, Stephen, M. , TAYLOR, Doug , WAGNER, Mark, I. , BRAINARD, David, E.
发明人： DEYOUNG, James, P. , MCCLAIN, James, B. , GROSS, Stephen, M. , TAYLOR, Doug , WAGNER, Mark, I. , BRAINARD, David, E.
IPC分类号： C23C
CPC分类号： H01L21/283 , B05D1/18 , B05D2401/90 , H01L21/28556 , H01L21/288 , H01L21/67028 , H01L28/65
摘要： A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.
摘要翻译：涂覆基材的方法包括以下步骤：（a）在密封容器中提供基材，所述基材具有表面部分; （b）用第一超临界流体至少部分地填充封闭的容器，使得所述第一超临界流体接触表面部分，第一超临界流体携带或包含涂层组分; 然后（c）向所述反应容器中加入单独的压缩气体气氛，使得在所述第一超临界流体和所述单独的压缩气体气氛之间形成边界，所述单独的压缩气体气氛的密度小于所述第一超临界流体; 然后（d）通过将所述单独的压缩气体气氛继续加入到所述容器中，使所述边界移动穿过所述表面部分并且将涂层组分的薄膜沉积在所述微电子衬底上，从而使所述第一超临界流体从所述容器移位。

5. 发明申请

WO2005072095A2 METHOD OF TREATING MICROELECTRONIC SUBSTRATES 审中-公开
标题翻译：微电子基板处理方法
公开(公告)号：WO2005072095A2
公开(公告)日：2005-08-11
申请号：PCT/US2004/042001
申请日：2004-12-15
申请人： MICELL TECHNOLOGIES, INC. , DEYOUNG, James, P. , MCCLAIN, James, B. , GROSS, Stephen, M. , TAYLOR, Doug , WAGNER, Mark, I. , BRAINARD, David
发明人： DEYOUNG, James, P. , MCCLAIN, James, B. , GROSS, Stephen, M. , TAYLOR, Doug , WAGNER, Mark, I. , BRAINARD, David
IPC分类号： H01L21/288 , H01L21/3205 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/32051 , H01L21/283 , H01L21/288 , H01L21/76814 , H01L21/76843 , H01L21/76871
摘要： A method of treating a dielectric surface portion of a semiconductor substrate, comprising the steps of: (a) providing a semiconductor substrate having a dielectric surface portion; and then (b) treating said dielectric surface portion with a coating reagent, the coating reagent comprising a reactive group coupled to a coordinating group, with the coordinating group having a metal bound thereto, so that the metal is deposited on the dielectric surface portion to produce a surface portion treated with a metal.
摘要翻译：一种处理半导体衬底的电介质表面部分的方法，包括以下步骤：（a）提供具有电介质表面部分的半导体衬底; 然后（b）用涂层试剂处理所述电介质表面部分，所述涂覆试剂包含与配位基团偶联的反应基团，所述配位基团与其结合金属，使得金属沉积在电介质表面部分上产生用金属处理的表面部分。

6. 发明申请

WO2004070776A2 METHODS FOR TRANSFERRING SUPERCRITICAL FLUIDS IN MICROELECTRONIC AND OTHER INDUSTRIAL PROCESSES 审中-公开
标题翻译：在微电子和其他工业过程中传输超临界流体的方法
公开(公告)号：WO2004070776A2
公开(公告)日：2004-08-19
申请号：PCT/US2003/040155
申请日：2003-12-08
申请人： MICELL TECHNOLOGIES, INC. , MCCLAIN, James, B. , DEYOUNG, James, P. , GROSS, Stephen, M. , WAGNER, Mark, I.
发明人： MCCLAIN, James, B. , DEYOUNG, James, P. , GROSS, Stephen, M. , WAGNER, Mark, I.
IPC分类号： H01L
CPC分类号： B08B7/0021 , B05D1/18 , B05D2401/90 , H01L21/02063 , H01L21/02101 , H01L21/67017 , H01L21/67028 , Y10T137/0324
摘要： A method of displacing a supercritical fluid from a pressure vessel (e.g., in a microelectronic manufacturing process), comprises the steps of: providing an enclosed pressure vessel containing a first supercritical fluid (said supercritical fluid preferably comprising carbon dioxide); adding a second fluid (typically also a supercritical fluid) to said vessel, with said second fluid being added at a pressure greater than the pressure of the first supercritical fluid, and with said second fluid having a density less than that of the first supercritical fluid; forming an interface between the first supercritical fluid and the second fluid; and displacing at least a portion of the first supercritical fluid from the vessel with the pressure of the second, preferably fluid while maintaining the interface therebetween.
摘要翻译：从压力容器（例如，微电子制造工艺）中移出超临界流体的方法包括以下步骤：提供包含第一超临界流体（所述超临界流体优选包含二氧化碳）的封闭压力容器; 向所述容器中加入第二流体（通常也是超临界流体），其中所述第二流体以大于第一超临界流体的压力的压力加入，并且所述第二流体的密度小于第一超临界流体的密度 ; 在所述第一超临界流体和所述第二流体之间形成界面; 并且使第二超临界流体的至少一部分与第二流体（优选流体）的压力从容器移位，同时保持其间的界面。

7. 发明申请

WO2004033758A3 COMPOSITIONS OF TRANSITION METAL SPECIES IN DENSE PHASE CARBON DIOXIDE AND METHODS OF USE THEREOF 审中-公开
公开(公告)号：WO2004033758A3
公开(公告)日：2004-04-22
申请号：PCT/US2003/030702
申请日：2003-09-30
申请人： MICELL TECHNOLOGIES, INC. , MCCLAIN, James, B. , GROSS, Stephen, M. , DEYOUNG, James, P. , WAGNER, Mark, I.
发明人： MCCLAIN, James, B. , GROSS, Stephen, M. , DEYOUNG, James, P. , WAGNER, Mark, I.
IPC分类号： C23G1/02
摘要： Compositions useful for cleaning metal from a substrate or coating metal onto a substrate are described: Such compositions comprise (a) a densified carbon dioxide continuous phase; (b) a polar discrete phase in said carbon dioxide continuous phase; (c) a metal in said discrete phase ( i.e ., a metal removed from the substrate, or to be coated onto the substrate); (d) at least one ligand in said continuous phase, said discrete phase, or both said continuous and said discrete phase.

8. 发明申请

WO2003097550A1 METHODS AND COMPOSITIONS FOR ETCH CLEANING MICROELECTRONIC SUBSTRATES IN CARBON DIOXIDE 审中-公开
标题翻译：在二氧化碳中清洗微电子基板的方法和组合物
公开(公告)号：WO2003097550A1
公开(公告)日：2003-11-27
申请号：PCT/US2003/014735
申请日：2003-05-13
申请人： MICELL TECHNOLOGIES, INC. , MCCLAIN, James, B. , DEYOUNG, James, P. , GROSS, Stephen, M. , WAGNER, Mark, I.
发明人： MCCLAIN, James, B. , DEYOUNG, James, P. , GROSS, Stephen, M. , WAGNER, Mark, I.
IPC分类号： C03C23/00
CPC分类号： C11D7/08 , B08B7/0021 , C11D7/02 , C11D11/0047 , H01L21/31116 , H01L21/31133
摘要： A method of cleaning a microelectronic substrate is carried out by providing a cleaning fluid, the cleaning fluid comprising an adduct of hydrogen fluoride with a Lewis base in a carbon dioxide solvent; and then cleaning the substrate by contacting the substrate to the cleaning fluid for a time sufficient to clean the substrate.
摘要翻译：清洁微电子基板的方法是通过提供一种清洗流体来进行的，该清洗流体包括氟化氢与路易斯碱在二氧化碳溶剂中的加合物; 然后通过使衬底与清洁流体接触足以清洁衬底的时间来清洁衬底。

9. 发明申请

WO2003023840A3 METHODS AND APPARATUS FOR CLEANING AND/OR TREATING A SUBSTRATE USING CO2 审中-公开
公开(公告)号：WO2003023840A3
公开(公告)日：2003-03-20
申请号：PCT/US2002/024007
申请日：2002-07-30
申请人： MICELL TECHNOLOGIES, INC. , DEYOUNG, James, P. , MCCLAIN, James, P. , COLE, Michael, E. , WORM, Steve, L. , BRAINARD, David, E.
发明人： DEYOUNG, James, P. , MCCLAIN, James, P. , COLE, Michael, E. , WORM, Steve, L. , BRAINARD, David, E.
IPC分类号： H01L21/306
摘要： According to method embodiments of the present invention, a method for cleaning a microelectronic substrate includes placing the substrate in a pressure chamber. A process fluid including dense phase CO 2 is circulated through the chamber such that the process fluid contacts the substrate. The phase of the CO 2 is cyclically modulated during at least a portion of the step of circulating the process fluid.

10. 发明申请

WO2003084680A1 ENHANCED PROCESSING OF PERFORMANCE FILMS USING HIGH-DIFFUSIVITY PENETRANTS 审中-公开
标题翻译：使用高分辨率渗透剂对性能膜进行加强处理
公开(公告)号：WO2003084680A1
公开(公告)日：2003-10-16
申请号：PCT/US2003/009245
申请日：2003-03-26
申请人： MICELL TECHNOLOGIES, INC. , CARBONELL, Ruben , DESIMONE, Joseph, M. , MCCLAIN, James, B. , DEYOUNG, James, P.
发明人： CARBONELL, Ruben , DESIMONE, Joseph, M. , MCCLAIN, James, B. , DEYOUNG, James, P.
IPC分类号： B05D3/04
CPC分类号： H01L21/3105 , G03F7/168 , G03F7/265 , G03F7/38 , H01L21/31058
摘要： A method of reducing undesired topographic features, increasing film density, and/or increasing adhesion to an underlying substrate in a polymer film formed on a microelectronic substrate, comprises: (a) providing a microelectronic substrate, the substrate having a polymer film deposited thereon; (b) contacting the substrate to carbon dioxide (optionally containing additional ingredients such as cosolvents or chemical intermediates); and (c) elevating the pressure of the carbon dioxide to plasticize the polymer film and reduce undesired topographic features, increase film density, and/or increase adhesion of the film to the underlying substrate.
摘要翻译：包括：（a）提供微电子衬底，所述衬底具有沉积在其上的聚合物膜;以及（c）提供微电子衬底，所述衬底具有沉积在其上的聚合物膜; （b）将底物与二氧化碳接触（任选地含有另外的成分，例如助溶剂或化学中间体）; 和（c）提高二氧化碳的压力以塑化聚合物膜并减少不期望的形貌特征，增加膜密度和/或增加膜与下面的基底的粘附。

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