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61. 发明申请

WO2005013335A2 METHOD OF DEPOSITING PATTERNED FILMS OF MATERIALS USING A POSITIVE IMAGING PROCESS 审中-公开
标题翻译：使用正式成像过程沉积图案化材料膜的方法
公开(公告)号：WO2005013335A2
公开(公告)日：2005-02-10
申请号：PCT/US2004/025075
申请日：2004-07-30
申请人： EKC TECHNOLOGY, INC. , HILL, Ross, H. , BLAIR, Sharon, Louise , LI, Grace , ZHANG, Xin , RUAN, Haixiong
发明人： HILL, Ross, H. , BLAIR, Sharon, Louise , LI, Grace , ZHANG, Xin , RUAN, Haixiong
IPC分类号： H01L
CPC分类号： H01L21/0337 , G03F7/0042 , H01L21/0332 , H01L21/288 , H01L21/3081 , H01L21/3086 , H01L21/31144 , H01L21/316 , H01L21/31691 , H05K3/106 , H05K2203/121
摘要： The invention generally encompasses a method for forming a pattern on a substrate. The method comprises applying a precursor comprising at least one metal to a substrate to form a precursor layer, exposing a predetermined portion of the precursor layer and developing the predetermined portion of the precursor layer. The developing step removes, or at least substantially removes, the predetermined portion from the substrate, thereby forming a pattern on the substrate that comprises a remaining portion of the precursor. In one embodiment, the precursor layer comprises Ti(Pr i O) 2 (EAA) 2 .
摘要翻译：本发明总体上包括用于在衬底上形成图案的方法。该方法包括将包含至少一种金属的前体施加到基底以形成前体层，暴露前体层的预定部分并显影前体层的预定部分。显影步骤从基板去除或至少基本上去除预定部分，由此在基板上形成包含前体剩余部分的图案。在一个实施方案中，前体层包含Ti（Pr 2 O）2（EAA）2。

62. 发明申请

WO0250336A3 INTEGRATED MUTLI-STEP GAP FILL AND ALL FEATURE PLANARIZATION FOR CONDUCTIVE MATERIALS 审中-公开
标题翻译：集成的MUTLI-STEP GAP填充和所有导电材料的特征平面化
公开(公告)号：WO0250336A3
公开(公告)日：2005-01-06
申请号：PCT/US0146449
申请日：2001-12-03
申请人： APPLIED MATERIALS INC
发明人： HSU WEI-YUNG , CHEN LIANG-YUH , MORAD RATSON , CARL DANIEL A , SOMEKH SASSON
IPC分类号： B24B37/00 , B24B37/04 , C25D5/00 , C25D5/22 , C25D7/12 , H01L21/288 , H01L21/304 , H01L21/321 , H01L21/768 , C23C18/16 , C25D5/02
CPC分类号： C25D7/123 , C25D5/06 , C25D5/22 , C25D17/001 , C25D17/008 , H01L21/288 , H01L21/2885 , H01L21/3212 , H01L21/7684 , H01L21/76877
摘要： A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate. During the deposition, the partial enclosure and the substrate are rotated relative one another.
摘要翻译：提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。在一个实施例中，提供了一种装置，其包括部分外壳，可渗透盘，漫射板和任选的阳极。衬底载体可定位在部分外壳上方，并且适于将衬底移动到与可渗透盘接触或接近的位置。部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。在另一方面，提供了一种方法，其中将基板定位在其中具有电解质的部分封闭体中，其中离开可渗透盘离第一距离。任选地将电流施加到衬底的表面，并且在衬底上沉积第一厚度。接下来，将基板定位成更靠近可渗透盘，并且在基板上沉积第二厚度。在沉积期间，部分封闭物和基底相对彼此旋转。

63. 发明申请

WO2004101855A2 ELECTROCHEMICAL FABRICATION METHODS INCLUDING USE OF SURFACE TREATMENTS TO REDUCE OVERPLATING AND/OR PLANARIZATION DURING FORMATION OF MULTI-LAYER THREE-DIMENSIONAL STRUCTURES 审中-公开
标题翻译：电化学制备方法包括在形成多层三维结构时减少表面处理和/或平面化的表面处理
公开(公告)号：WO2004101855A2
公开(公告)日：2004-11-25
申请号：PCT/US2004/014299
申请日：2004-05-07
申请人： MICROFABRICA INC.
发明人： COHEN, Adam, L. , SMALLEY, Dennis, R. , LOCKARD, Michael, S. , LE, Qui, T.
IPC分类号： C25D
CPC分类号： H01L21/288 , B33Y10/00 , C23C18/1605 , C25D5/022 , C25D5/10 , H01L21/311 , H01L21/7682 , H01L21/76879
摘要： A method of fabricating three-dimensional structures from a plurality of adhered layers of at least a first and a second material wherein the first material is a conductive material and wherein each of a plurality of layers includes treating a surface of a first material prior to deposition of the second material. The treatment of the surface of the first material either (1) decreases the susceptibility of deposition of the second material onto the surface of the first material or (2) eases or quickens the removal of any second material deposited on the treated surface of the first material. In some embodiments the treatment of the first surface includes forming a dielectric coating over the surface and the second material is electrode posited (e.g. using an electroplating or electrophoretic process). In other embodiments the first material is coated with a conductive material that doesn't readily accept deposits of electroplated or electroless deposited materials.
摘要翻译：从至少第一和第二材料的多个粘附层制造三维结构的方法，其中所述第一材料是导电材料，并且其中多个层中的每一个包括在沉积之前处理第一材料的表面的第二种材料。第一材料的表面的处理（1）降低了将第二材料沉积到第一材料的表面上的敏感性，或（2）减轻或加快了沉积在第一材料的处理表面上的任何第二材料的去除材料。在一些实施例中，第一表面的处理包括在表面上形成电介质涂层，并且第二材料是电极定位的（例如使用电镀或电泳工艺）。在其它实施例中，第一材料涂覆有不容易接受电镀或无电沉积材料沉积物的导电材料。

64. 发明申请

WO2004099466A2 METHOD FOR ELECTROLESS DEPOSITION OF PHOSPHORUS-CONTAINING METAL FILMS ONTO COPPER WITH PALLADIUM-FREE ACTIVATION 审中-公开
标题翻译：将含磷金属膜电沉积在铜层上的方法无磷活化
公开(公告)号：WO2004099466A2
公开(公告)日：2004-11-18
申请号：PCT/US2004/013944
申请日：2004-05-05
申请人： BLUE29 CORPORATION , KOLICS, Artur , PETROV, Nicolai , TING, Chiu , IVANOV, Igor, C.
发明人： KOLICS, Artur , PETROV, Nicolai , TING, Chiu , IVANOV, Igor, C.
IPC分类号： C23C18/16
CPC分类号： H01L21/76849 , C23C18/1608 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/7685 , H01L21/76855 , H01L21/76874
摘要： The method for selective deposition of Co-W-P system films onto copper with palladium-free activation consists of creating hydrogen-rich complexes on the metal surface prior to deposition. More specifically, the method consists of creating the aforementioned complexes on the copper surfaces prior to electroless deposition of a Co-W-P system films. This is achieved by contacting the copper surface with reducing agents for a short period of time and under an elevated temperature. Such reducing agents comprise a hypophosphorous-acid-based or borane-based reducing agents such as dimethylamine borane. Hypophosphorous acid is preferred since it is more compatible with the electroless deposition solution.
摘要翻译： Co-W-P系膜在铜上选择性沉积无钯活化的方法包括在沉积前在金属表面上产生富含氢的配合物。更具体地，该方法包括在Co-W-P系膜的无电沉积之前在铜表面上产生上述配合物。这是通过使铜表面与还原剂在短时间内和在高温下接触而实现的。这种还原剂包括次磷酸或基于硼烷的还原剂如二甲胺硼烷。次磷酸是优选的，因为它与无电解沉积溶液更相容。

65. 发明申请

WO2004081261A2 PLATING APPARATUS 审中-公开
标题翻译：电镀设备
公开(公告)号：WO2004081261A2
公开(公告)日：2004-09-23
申请号：PCT/JP2004003040
申请日：2004-03-09
申请人： EBARA CORP , KURIYAMA FUMIO , TAKEMURA TAKASHI , SAITO NOBUTOSHI , KIMURA MASAAKI , KIUMI REI
发明人： KURIYAMA FUMIO , TAKEMURA TAKASHI , SAITO NOBUTOSHI , KIMURA MASAAKI , KIUMI REI
IPC分类号： C23C18/16 , C23C18/54 , C25D5/02 , C25D5/08 , C25D7/12 , C25D17/00 , C25D21/10 , H01L21/288 , H01L21/60 , C25D
CPC分类号： C25D17/008 , C23C18/1628 , C25D5/08 , C25D7/123 , C25D17/001 , C25D21/10 , H01L21/288 , H01L21/2885 , H01L24/11 , H01L2224/05568 , H01L2224/05573 , H01L2224/1147 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/00
摘要： The present invention is concerned with a plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus (170) has a plating tank (186) for holding a plating solution (188), a holder (160) for holding a workpiece (W) and bringing a surface to be plated of the workpiece into contact with the plating solution (188) in the plating tank (186), and a ring-shaped nozzle pipe (220) disposed in the plating tank (186) and having a plurality of plating solution injection nozzles (222) for injecting the plating solution (188) to the surface to be plated of the workpiece held by the holder (160) to supply the plating solution (188) into the plating tank (186).
摘要翻译：本发明涉及用于在半导体晶片的表面中限定的沟槽，通孔或抗蚀剂开口中形成电镀膜的电镀设备，以及形成电连接到封装的电极的凸块，半导体晶片的表面。电镀装置（170）具有用于保持电镀液（188）的电镀槽（186），用于保持工件（W）的保持架（160），使被处理体的表面与电镀液接触（186）中的电镀液注入喷嘴（188），以及设置在所述镀槽（186）内的多个电镀液注入喷嘴（222）的环状喷嘴管（220）被保持器（160）保持的工件的待镀表面，以将镀液（188）供应到镀槽（186）中。

66. 发明申请

WO2004081256A1 ACTIVATION-FREE ELECTROLESS SOLUTION FOR DEPOSITION OF COBALT AND METHOD FOR DEPOSITION OF COBALT CAPPING/ PASSIVATION LAYER ON COPPER 审中-公开
标题翻译：用于沉积钴的无活性电解质溶液和铜沉积铜/铜钝化层沉积方法
公开(公告)号：WO2004081256A1
公开(公告)日：2004-09-23
申请号：PCT/US2004/006607
申请日：2004-03-05
申请人： BLUE29 CORPORATION , IVANOV, Igor, C. , KOLICS, Artur , PETROV, Nicolai , TING, Chiu
发明人： KOLICS, Artur , PETROV, Nicolai , TING, Chiu
IPC分类号： C23C18/50
CPC分类号： H01L21/288 , C23C18/36 , C23C18/50 , H01L21/76849
摘要： The present invention relates to compositions and a method for electroless formation of alkaline-metal-free coatings on the basis of cobalt and composition of cobalt with tungsten and phosphorus, which have high resistance to oxidation and stability of electrical characteristics, when the Co-Cu system layer is used in IC chips. The composition of the electroless solution contains more than one reducing agents, one of which can catalyze the initial electroless deposition layer of cobalt on copper (called initiator), while the other maintains deposition of cobalt on the aforementioned initial layer as the process is continued. Small amount (100- 5000 ppm) of elements from the initiator also builds into the electroless film, which is expected to further improve the barrier properties of the resultant film compared to the deposition bath without initiator. Such coating may find application in semiconductor manufacturing where properties of deposited films and controllability of the composition and physical and chemical characteristics of the deposited films may be critically important.
摘要翻译：本发明涉及组合物和无碱形成无碱金属的涂层的方法，其中钴和钴与钨和磷的组成具有高抗氧化性和电特性的稳定性，当Co-Cu 系统层用于IC芯片。无电溶液的组成包含多于一种还原剂，其中之一可以催化铜上的钴的初始无电沉积层（称为引发剂），而另一种还原剂继续在上述初始层上沉积钴。来自引发剂的少量（100-5000ppm）元素也构成无电镀膜，与无引发剂的沉积浴相比，预期可进一步提高所得膜的阻隔性能。这种涂层可以应用于半导体制造中，其中沉积膜的性质和组成的可控性以及沉积膜的物理和化学特性可能是至关重要的。

67. 发明申请

WO2004070821A1 表示装置の作製方法审中-公开
标题翻译：显示器制造方法
公开(公告)号：WO2004070821A1
公开(公告)日：2004-08-19
申请号：PCT/JP2004/000899
申请日：2004-01-30
申请人：株式会社半導体エネルギー研究所 , 山崎舜平
发明人：山崎舜平
IPC分类号： H01L21/3213
CPC分类号： H01L21/32136 , G02F1/13439 , G02F2001/136295 , H01L21/288 , H01L21/32139 , H01L21/76838 , H01L27/3244 , H01L29/66765 , H01L29/78669 , H01L51/0005 , H01L51/0021 , H01L51/0022 , H01L51/0023 , H01L51/56
摘要：表示装置を製造工程において使用する原材料の使用量および真空処理工程に係る手間を低減し、表示装置製造の低コスト化を実現するために、本発明では、複数の液滴噴射孔を配置した液滴噴射ヘッドを有する第１の液滴噴射装置を用いて、被処理膜上に導電性粒子を含有する液滴を噴射し、導電性膜を形成した後、複数の液滴噴射孔を配置した液滴噴射ヘッドを有する第２の液滴噴射装置を用いて前記導電性膜の上に局所的にレジストパターンを形成し、前記レジストパターンをマスクとして前記導電性膜をエッチングし、配線を形成することを特徴とする。
摘要翻译：在显示器的制造过程中使用的原料量以及真空处理步骤所需的时间和劳动力减少，从而降低了显示器的制造成本。显示器制造方法的特征在于，通过使用具有液滴喷射头的第一液滴喷射装置喷射滴入含有导电粒子的液滴，从而形成导电膜，抗蚀剂图案通过使用具有液滴喷射头的第二液滴喷射装置局部地形成在导电膜上，其中设置了液滴喷嘴，通过使用抗蚀剂图案作为掩模来蚀刻导电膜，因此制造了布线。

68. 发明申请

WO2004070071A2 METHOD OF COATING MICROELECTRONIC SUBSTRATES 审中-公开
标题翻译：涂布微电子基板的方法
公开(公告)号：WO2004070071A2
公开(公告)日：2004-08-19
申请号：PCT/US2003/038324
申请日：2003-12-02
申请人： MICELL TECHNOLOGIES, INC. , DEYOUNG, James, P. , MCCLAIN, James, B. , GROSS, Stephen, M. , TAYLOR, Doug , WAGNER, Mark, I. , BRAINARD, David, E.
发明人： DEYOUNG, James, P. , MCCLAIN, James, B. , GROSS, Stephen, M. , TAYLOR, Doug , WAGNER, Mark, I. , BRAINARD, David, E.
IPC分类号： C23C
CPC分类号： H01L21/283 , B05D1/18 , B05D2401/90 , H01L21/28556 , H01L21/288 , H01L21/67028 , H01L28/65
摘要： A method of coating a substrate comprises the steps of: (a) providing a substrate in an enclosed vessel, the substrate having a surface portion; (b) at least partially filling the enclosed vessel with a first supercritical fluid so that said first supercritical fluid contacts the surface portion, with the first supercritical fluid carrying or containing a coating component; then (c) adding a separate compressed gas atmosphere to the reaction vessel so that a boundary is formed between the first supercritical fluid and the separate compressed gas atmosphere, said separate compressed gas atmosphere having a density less than said first supercritical fluid; and then (d) displacing said first supercritical fluid from said vessel by continuing adding said separate compressed gas atmosphere to said vessel so that said boundary moves across said surface portion and a thin film of coating component is deposited on said microelectronic substrate.
摘要翻译：涂覆基材的方法包括以下步骤：（a）在密封容器中提供基材，所述基材具有表面部分; （b）用第一超临界流体至少部分地填充封闭的容器，使得所述第一超临界流体接触表面部分，第一超临界流体携带或包含涂层组分; 然后（c）向所述反应容器中加入单独的压缩气体气氛，使得在所述第一超临界流体和所述单独的压缩气体气氛之间形成边界，所述单独的压缩气体气氛的密度小于所述第一超临界流体; 然后（d）通过将所述单独的压缩气体气氛继续加入到所述容器中，使所述边界移动穿过所述表面部分并且将涂层组分的薄膜沉积在所述微电子衬底上，从而使所述第一超临界流体从所述容器移位。

69. 发明申请

WO2004061948A2 METHOD FOR FORMING A SEMICONDUCTOR DEVICE AND STRUCTURE THEREOF 审中-公开
标题翻译：形成半导体器件及其结构的方法
公开(公告)号：WO2004061948A2
公开(公告)日：2004-07-22
申请号：PCT/US2003/030590
申请日：2003-09-23
申请人： MOTOROLA, INC., A CORPORATION OF THE STATE OF DELAWARE
发明人： GOLDBERG, Cindy, K. , FILIPIAK, Stanley, M. , FLAKE, John, C. , LII, Yeong-Jyh, T. , SMITH, Bradley, P. , SOLOMENTSEV, Yuri, E. , SPARKS, Terry, G. , STROZEWSKI, Kirk, J. , YU, Kathleen, C.
IPC分类号： H01L21/768
CPC分类号： H01L21/76844 , H01L21/288 , H01L21/7682 , H01L21/76849 , H01L21/76874
摘要： Dummy features (64, 65, 48a, 48b) are formed within an interlevel dielectric layer (36). In one embodiment, a non-gap filling dielectric layer (72) is formed over the dummy features (64, 65, 48a, 48b) to form voids (74) between the dummy features (64, 65, 48a, 48b) or a dummy feature (48a) and a current carrying region (44). In one embodiment, passivation layers (32 and 54) are formed by electroless deposition to protect the underlying conductive regions (44, 48a, 48b and 30) from being penetrated from the air gaps (74). In addition, the passivation layers( 32 and 54) overhang the underlying conductive regions (44, 48a, 48b and 30), thereby defining dummy features (65a, 65b and 67) adjacent the conductive regions (48a, 44 and 48b). The passivation layers (32 and 54) can be formed without additional patterning steps and help minimize misaligned vias from puncturing air gaps.
摘要翻译：虚拟特征（64,65,48a，48b）形成在层间电介质层（36）内。在一个实施例中，在虚拟特征（64,65,48a，48b）之上形成非间隙填充介电层（72），以在虚拟特征（64,65,48a，48b）之间形成空隙（74），或者虚拟特征（48a）和载流区（44）。在一个实施例中，通过无电沉积形成钝化层（32和54），以保护下面的导电区域（44,48a，48b和30）免受气隙（74）的侵入。此外，钝化层（32和54）突出在下面的导电区域（44,48a，48b和30）上，从而限定邻近导电区域（48a，44和48b）的虚拟特征（65a，65b和67）。可以形成钝化层（32和54），而无需额外的图案化步骤，并且有助于最小化穿孔气隙的不对准过孔。

70. 发明申请

WO2004057054A1 異方成長バンプ形成用無電解ニッケルめっき浴、異方成長バンプの形成方法、異方成長バンプが形成された物品及び無電解ニッケルめっき浴用異方成長促進剤审中-公开
标题翻译：用于形成各向异性烧结块的电镀镍镀层，形成各向异性烧结块的方法，具有形成的各向异性烧结块的方法和用于电镀镍镀层的各向异性生长加速器
公开(公告)号：WO2004057054A1
公开(公告)日：2004-07-08
申请号：PCT/JP2003/016404
申请日：2003-12-19
申请人：日本カニゼン株式会社 , 齋木幸則 , 根本憲一
发明人：齋木幸則 , 根本憲一
IPC分类号： C23C18/32
CPC分类号： C23C18/32 , H01L21/288 , H01L24/11 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01018 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01052 , H01L2924/01058 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01093 , H01L2924/014 , H01L2924/09701
摘要：　本発明は、広範囲多ピン化及び狭ピッチ化に対応するために必要な、高さばらつきの少ない高アスペクト比のドーム型バンプの形成を可能にする異方成長バンプ形成用無電解ニッケルめっき浴、異方成長ニッケルバンプを有する製品の形成方法、異方成長ニッケルバンプが形成された物品及び無電解ニッケルめっき浴用異方成長促進剤を提供することを目的とする。　本発明は、異方成長促進効果を有する量の異方成長促進剤を含有することを特徴とする異方成長バンプ形成用無電解ニッケルめっき浴を提供する。
摘要翻译：一种用于形成各向异性生长的凸块的化学镀镍浴，其特征在于，其包含必须具有加速各向异性生长的效果所需量的各向异性生长促进剂; 一种用于形成具有各向异性生长的镍凸块的制品的方法; 其上形成有各向异性生长的镍凸块的制品; 和用于化学镀镍浴的各向异性生长促进剂。化学镀镍浴允许形成具有圆顶形状的凸块，具有高的纵横比并且减小其高度的变化，这些凸起对应于较宽的范围，更多的引脚和较窄的音高。

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