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1. 发明申请

WO2004077512A3 UNIVERSAL SUBSTRATE HOLDER FOR TREATING OBJECTS IN FLUIDS 审中-公开
公开(公告)号：WO2004077512A3
公开(公告)日：2004-09-10
申请号：PCT/US2004/005214
申请日：2004-02-23
申请人： BLUE29 CORPORATION , IVANOV, Igor, C. , ZHANG, Jonathan, Weiguo
发明人： IVANOV, Igor, C. , ZHANG, Jonathan, Weiguo
IPC分类号： B23B31/14
摘要： A universal substrate holder of the invention for treating wafer substrates in liquids is provided with a shaft and a rod slidingly inserted into the central opening of the shaft. The end of the shaft that protrudes into the bowl supports a base platform for the substrate, while the end of the rod that protrudes into the bowl has radial arms that rigidly support an annular plate with pins that can pass through the opening of the base platform so that they can support the substrate above the surface of the platform. The annular plate supports clamping jaws made in the form of two-arm levers with shorter arms and longer arms. The longer arms are heavier and therefore in the stationary state of the holder keep the jaws turned into an open position. When the shaft begins to rotate, the jaws are turned under the effect of centrifugal forces into positions of clamping the substrate with the shorter arms. When the rod is pulled down, the ends of the longer arms come into contact with the base platform and are turned into the clamping position. The substrate holder of the invention allows clamping and releasing of the substrate in positions of the substrate above the platform and in a position of the substrate on the base substrate, when the backside of the substrate is inaccessible to the process liquid.

2. 发明申请

WO2004027837A1 TEMPERATURE-CONTROLLED SUBSTRATE HOLDER 审中-公开
标题翻译：温度控制基板支架
公开(公告)号：WO2004027837A1
公开(公告)日：2004-04-01
申请号：PCT/US2003/026697
申请日：2003-08-26
申请人： BLUE29 CORPORATION
发明人： IVANOV, Igor, C. , ZHANG, Jonathan, Weiguo , KOLICS, Artur
IPC分类号： H01L21/00
CPC分类号： C23C18/163 , B24B37/30 , B24B49/14 , C23C18/1678 , H01L21/288 , H01L21/2885 , H01L21/67248 , H01L21/68785
摘要： A substrate holder has a disk-like body with a central recess having diameter smaller than the diameter of the substrate placed onto the upper surface of the holder. The substrate can be clamped in place by the clamps of the edge-grip mechanism or placed into a seat without the use of clamps. In both cases, the substrate forms a partial wall that confines the heating/cooling recess or chamber. The aforementioned recess is filled with a cooling or heating liquid (depending on the mode of metal deposition) selectively supplied from a liquid heating or cooling system. In order to ensure in the working chamber above the substrate a pressure slightly higher than the pressure in the cooling/heating recess, the working chamber is first filled with the working solution under the atmospheric pressure, and then the recess is filled with a heating or cooling liquid with simultaneous increase of pressure in the working chamber to a level slightly exceeding the pressure in the recess. The substrate holder of the invention provides direct heat/cool-exchange between the heating/cooling medium and the substrate and allows instantaneous change of temperature of the heating/cooling liquid.
摘要翻译：衬底保持器具有盘状体，其具有直径小于放置在保持器的上表面上的衬底的直径的中心凹部。基板可以通过边缘抓握机构的夹具夹紧就位，或者不使用夹具而放置在座中。在这两种情况下，基板形成限制加热/冷却凹部或室的局部壁。上述凹部填充有从液体加热或冷却系统选择性地供应的冷却或加热液体（取决于金属沉积的模式）。为了确保在基板上方的工作室内的压力略高于冷却/加热凹槽中的压力，工作室首先在大气压力下被工作溶液填充，然后用加热或冷却液体，同时将工作室中的压力提高到稍微超过凹部中的压力的水平。本发明的衬底保持器在加热/冷却介质和衬底之间提供直接的热/冷交换，并且允许加热/冷却液体的温度的瞬时变化。

3. 发明申请

WO2004114386A3 METHODS AND SYSTEM FOR PROCESSING A MICROELECTRONIC TOPOGRAPHY 审中-公开
公开(公告)号：WO2004114386A3
公开(公告)日：2004-12-29
申请号：PCT/US2004/019349
申请日：2004-06-16
申请人： BLUE29 CORPORATION , IVANOV, Igor, C. , ZHANG, Weiguo , KOLICS, Artur
发明人： IVANOV, Igor, C. , ZHANG, Weiguo , KOLICS, Artur
IPC分类号： H01L21/288
摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, methods are provide which include loading a topography into a chamber and supplying fluids to an enclosed area about the topography. In particular, a method is provided for forming a hydrated metal oxide layer. In addition, a method is provided for selectively depositing a dielectric layer and a metal layer upon a topography. A topography having a single layer with at least four elements lining a lower surface and sidewalls of a metal feature is also provided. A process chamber which includes a gate configured to either seal or provide an air passage to the chamber and a substrate holder comprising a clamping jaw with a lever are contemplated herein. A process chamber with a reservoir arranged above a substrate holder is also provided.

4. 发明申请

WO2004114386A2 METHODS AND SYSTEM FOR PROCESSING A MICROELECTRONIC TOPOGRAPHY 审中-公开
标题翻译：用于处理微电子地理学的方法和系统
公开(公告)号：WO2004114386A2
公开(公告)日：2004-12-29
申请号：PCT/US2004/019349
申请日：2004-06-16
申请人： BLUE29 CORPORATION , IVANOV, Igor, C. , ZHANG, Weiguo , KOLICS, Artur
发明人： IVANOV, Igor, C. , ZHANG, Weiguo , KOLICS, Artur
IPC分类号： H01L21/288
CPC分类号： H01L21/288 , H01L21/768
摘要： Methods and systems are provided which are adapted to process a microelectronic topography, particularly in association with an electroless deposition process. In general, methods are provide which include loading a topography into a chamber and supplying fluids to an enclosed area about the topography. In particular, a method is provided for forming a hydrated metal oxide layer. In addition, a method is provided for selectively depositing a dielectric layer and a metal layer upon a topography. A topography having a single layer with at least four elements lining a lower surface and sidewalls of a metal feature is also provided. A process chamber which includes a gate configured to either seal or provide an air passage to the chamber and a substrate holder comprising a clamping jaw with a lever are contemplated herein. A process chamber with a reservoir arranged above a substrate holder is also provided.
摘要翻译：提供了适于处理微电子拓扑的方法和系统，特别是与无电沉积工艺相关联。通常，提供方法，其包括将形貌加载到室中并将流体供应到关于地形的封闭区域。特别地，提供了形成水合金属氧化物层的方法。此外，提供了一种在地形上选择性地沉积介电层和金属层的方法。还提供了具有单层的形状，其中至少四个元件衬在下表面和金属特征的侧壁。一种处理室，其包括构造成密封或提供到腔室的空气通道的门，以及包括具有杠杆的夹爪的衬底保持器。还提供了具有设置在衬底保持器上方的存储器的处理室。

5. 发明申请

WO2005010954A1 MULTI-STAGED HEATING SYSTEM FOR FABRICATING MICROELECTRONIC DEVICES 审中-公开
标题翻译：用于制造微电子器件的多级加热系统
公开(公告)号：WO2005010954A1
公开(公告)日：2005-02-03
申请号：PCT/US2004/022988
申请日：2004-07-16
申请人： BLUE29 CORPORATION , IVANOV, Igor, C. , ZHANG, Weigho
发明人： IVANOV, Igor, C. , ZHANG, Weigho
IPC分类号： H01L21/00
CPC分类号： H01L21/67248 , C23C18/1619 , C23C18/1676 , H01L21/67023 , H01L21/6715
摘要： A system is provided which is adapted to transport a fluid from a plurality of serially coupled tanks to a chamber configured to process microelectronic wafers. The system further includes a plurality of temperature controllers positioned such that the chamber and the tanks are characterized into at least three zones based upon the adaptations of the controllers to maintain the fluid within each zone within a distinct temperature range. A method is also provided which includes storing a fluid within a preliminary temperature range, transporting the fluid to an intermediate tank and controlling the fluid temperature within the intermediate tank to be within a transitional temperature range distinct from the preliminary temperature range. The method further includes delivering the fluid to a process chamber and controlling the fluid temperature within the process chamber to be within a process temperature range distinct from the preliminary and transitional temperature ranges.
摘要翻译：提供了一种系统，其适于将流体从多个串联耦合的罐输送到被配置为处理微电子晶片的室。该系统还包括多个温度控制器，其定位成使得基于控制器的适应性使得室和罐的特征在于至少三个区域，以将每个区域内的流体保持在不同的温度范围内。还提供了一种方法，其包括将流体存储在初步温度范围内，将流体输送到中间罐并将中间罐内的流体温度控制在与预备温度范围不同的过渡温度范围内。该方法还包括将流体输送到处理室并将处理室内的流体温度控制在与预备温度和过渡温度范围不同的过程温度范围内。

6. 发明申请

WO2004099466A2 METHOD FOR ELECTROLESS DEPOSITION OF PHOSPHORUS-CONTAINING METAL FILMS ONTO COPPER WITH PALLADIUM-FREE ACTIVATION 审中-公开
标题翻译：将含磷金属膜电沉积在铜层上的方法无磷活化
公开(公告)号：WO2004099466A2
公开(公告)日：2004-11-18
申请号：PCT/US2004/013944
申请日：2004-05-05
申请人： BLUE29 CORPORATION , KOLICS, Artur , PETROV, Nicolai , TING, Chiu , IVANOV, Igor, C.
发明人： KOLICS, Artur , PETROV, Nicolai , TING, Chiu , IVANOV, Igor, C.
IPC分类号： C23C18/16
CPC分类号： H01L21/76849 , C23C18/1608 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/7685 , H01L21/76855 , H01L21/76874
摘要： The method for selective deposition of Co-W-P system films onto copper with palladium-free activation consists of creating hydrogen-rich complexes on the metal surface prior to deposition. More specifically, the method consists of creating the aforementioned complexes on the copper surfaces prior to electroless deposition of a Co-W-P system films. This is achieved by contacting the copper surface with reducing agents for a short period of time and under an elevated temperature. Such reducing agents comprise a hypophosphorous-acid-based or borane-based reducing agents such as dimethylamine borane. Hypophosphorous acid is preferred since it is more compatible with the electroless deposition solution.
摘要翻译： Co-W-P系膜在铜上选择性沉积无钯活化的方法包括在沉积前在金属表面上产生富含氢的配合物。更具体地，该方法包括在Co-W-P系膜的无电沉积之前在铜表面上产生上述配合物。这是通过使铜表面与还原剂在短时间内和在高温下接触而实现的。这种还原剂包括次磷酸或基于硼烷的还原剂如二甲胺硼烷。次磷酸是优选的，因为它与无电解沉积溶液更相容。

7. 发明申请

WO2004081256A1 ACTIVATION-FREE ELECTROLESS SOLUTION FOR DEPOSITION OF COBALT AND METHOD FOR DEPOSITION OF COBALT CAPPING/ PASSIVATION LAYER ON COPPER 审中-公开
标题翻译：用于沉积钴的无活性电解质溶液和铜沉积铜/铜钝化层沉积方法
公开(公告)号：WO2004081256A1
公开(公告)日：2004-09-23
申请号：PCT/US2004/006607
申请日：2004-03-05
申请人： BLUE29 CORPORATION , IVANOV, Igor, C. , KOLICS, Artur , PETROV, Nicolai , TING, Chiu
发明人： KOLICS, Artur , PETROV, Nicolai , TING, Chiu
IPC分类号： C23C18/50
CPC分类号： H01L21/288 , C23C18/36 , C23C18/50 , H01L21/76849
摘要： The present invention relates to compositions and a method for electroless formation of alkaline-metal-free coatings on the basis of cobalt and composition of cobalt with tungsten and phosphorus, which have high resistance to oxidation and stability of electrical characteristics, when the Co-Cu system layer is used in IC chips. The composition of the electroless solution contains more than one reducing agents, one of which can catalyze the initial electroless deposition layer of cobalt on copper (called initiator), while the other maintains deposition of cobalt on the aforementioned initial layer as the process is continued. Small amount (100- 5000 ppm) of elements from the initiator also builds into the electroless film, which is expected to further improve the barrier properties of the resultant film compared to the deposition bath without initiator. Such coating may find application in semiconductor manufacturing where properties of deposited films and controllability of the composition and physical and chemical characteristics of the deposited films may be critically important.
摘要翻译：本发明涉及组合物和无碱形成无碱金属的涂层的方法，其中钴和钴与钨和磷的组成具有高抗氧化性和电特性的稳定性，当Co-Cu 系统层用于IC芯片。无电溶液的组成包含多于一种还原剂，其中之一可以催化铜上的钴的初始无电沉积层（称为引发剂），而另一种还原剂继续在上述初始层上沉积钴。来自引发剂的少量（100-5000ppm）元素也构成无电镀膜，与无引发剂的沉积浴相比，预期可进一步提高所得膜的阻隔性能。这种涂层可以应用于半导体制造中，其中沉积膜的性质和组成的可控性以及沉积膜的物理和化学特性可能是至关重要的。

8. 发明申请

WO2004047149A3 SPATIALLY-ARRANGED CHEMICAL PROCESSING STATION 审中-公开
公开(公告)号：WO2004047149A3
公开(公告)日：2004-06-03
申请号：PCT/US2003/036736
申请日：2003-11-18
申请人： BLUE29 CORPORATION
发明人： IVANOV, Igor, C. , TING, Chiu , ZHANG, Jonathan, Weiguo , KOLICS, Artur
IPC分类号： B05C11/00
摘要： The present invention discloses a station, e.g., for IC fabrication with a flexible configuration. It consists of an array of processing chambers, which are grouped into processing modules and arranged in a two-dimensional fashion, in vertical levels and horizontal rows, and is capable of operating independent of each other. Each processing chamber can perform electroless deposition and other related processing steps sequentially on a wafer with more than one processing fluid without having to remove it from the chamber. The system is served by a single common industrial robot, which may have a random to access to all the working chambers and cells of the storage unit for transporting wafers between the wafer cassettes and inlet/outlets ports of any of the chemical processing chambers. The station occupies a service-room floor space and a clean-room floor space. The processing modules and the main chemical management unit connected to the local chemical supply unit occupy a service-room floor space, while the robot and the wafer storage cassettes are located in a clean room. Thus, in distinction to the known cluster-tool machines, the station of the invention makes it possible to transfer part of the units from the expensive clean-room area to less-expensive service area.

9. 发明申请

WO2004024983A2 METHOD AND APPARATUS FOR ELECTROLESS DEPOSITION WITH TEMPERATURE-CONTROLLED CHUCK 审中-公开
标题翻译：用温度控制的电解沉积的方法和装置
公开(公告)号：WO2004024983A2
公开(公告)日：2004-03-25
申请号：PCT/US2003/026698
申请日：2003-08-26
申请人： BLUE29 CORPORATION
发明人： IVANOV, Igor, C. , ZHANG, Jonathan, Weiguo , KOLICS, Artur
IPC分类号： C23C18/16
CPC分类号： H01L21/67109 , C23C18/1619 , C23C18/1676 , C23C18/1678 , C23C18/168 , C23C18/1682
摘要： The method for electroless deposition of a coating material, which may be a metal, semiconductor, or dielectric, that is carried out at a relatively low temperature of the working solution compensated by an increased temperature on the substrate which is controlled by a heater built into the substrate chuck. A decrease in the temperature of the working solution prevents thermal decomposition of the solution and reduces formation of gas bubbles, normally generated at increased temperatures. Accumulation of bubbles on the surface of the substrate is further prevented due to upwardly-facing orientation of the treated surface of the substrate. The substrate holder is equipped with a substrate heater and a substrate cooler that can be used alternately for quick heating or cooling of the substrate surface.
摘要翻译：用于无电沉积涂覆材料的方法，其可以是金属，半导体或电介质，其在工作溶液的相对低的温度下进行，所述工作溶液由基板上升高的温度补偿，该温度由内置的基板卡盘。工作溶液的温度降低可防止溶液的热分解，并减少通常在升高的温度下产生的气泡的形成。由于衬底的处理表面的向上取向，进一步防止了衬底表面积聚的气泡。基板保持器配备有可以交替地用于基板表面的快速加热或冷却的基板加热器和基板冷却器。

10. 发明申请

WO2004046410A2 METHOD OF ELECTROLESS DEPOSITION OF THIN METAL AND DIELECTRIC FILMS WITH TEMPERATURE CONTROLLED ON STAGES OF FILM GROWTH 审中-公开
标题翻译：薄膜金属和电介质膜的电沉积方法与温度控制在薄膜生长阶段
公开(公告)号：WO2004046410A2
公开(公告)日：2004-06-03
申请号：PCT/US2003/036735
申请日：2003-11-18
申请人： BLUE29 CORPORATION
发明人： IVANOV, Igor, C.
IPC分类号： C23C
CPC分类号： C23C18/1651 , C23C18/168 , H01L21/288
摘要： The method of the invention comprises accumulating experimental data or obtaining existing data with regard to the optimal time-temperature relationship of the deposition process on various film-formation stages for various materials, forming nuclei of a selected material on the surface of the treated object in the first stage under first temperature-controlled conditions for the formation of nuclei of said selected material, converting the nuclei of the aforementioned selected material into island-structured deposited layer of said material by causing lateral growth of the nuclei under second temperature-controlled conditions; converting the island-structure layer into a continuously interconnected cluster structure by causing further lateral growth of said island-structured deposited layer under third temperature-controlled conditions; forming a first continuous film of said material under fourth temperature controlled conditions which provides said first continuous film with predetermined properties; and then completing the formation of a final coating film by growing at least one subsequent continuous film of said material under fifth temperature-controlled conditions until a film of a predetermined thickness is obtained. The fifth temperature-controlled conditions may be characterized by a pulse-mode or step-like variations of temperature in time with rapid cooling or heating for obtaining high degree of crystallinity or for increase in the rate of deposition. The method of the invention could be realized with the use of the electroless deposition apparatus with instantaneous cooling or heating of the object, e.g., a semiconductor substrate, in a deposition chamber.
摘要翻译：本发明的方法包括累积实验数据或获得关于各种材料的各种成膜阶段的沉积过程的最佳时间 - 温度关系的现有数据，在被处理物体的表面上形成选定材料的核在用于形成所述选定材料的核的第一温度控制条件下的第一阶段，通过在第二温度控制条件下引起核的横向生长，将上述选择的材料的核转化成所述材料的岛状沉积层; 通过在第三温度控制条件下进一步横向生长所述岛状沉积层，将岛状结构层转化为连续互连的簇结构; 在第四温度控制条件下形成所述材料的第一连续膜，其提供具有预定特性的所述第一连续膜; 然后通过在第五温度控制条件下生长所述材料的至少一个随后的连续膜直到获得预定厚度的膜来完成最终涂膜的形成。第五温度控制条件的特征可以在于快速冷却或加热以获得高结晶度或者提高沉积速率的时间上的脉冲模式或阶梯状的温度变化。本发明的方法可以通过在沉积室中使用具有瞬间冷却或加热物体（例如半导体衬底）的无电沉积设备来实现。

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