发明申请
WO0250336A3 INTEGRATED MUTLI-STEP GAP FILL AND ALL FEATURE PLANARIZATION FOR CONDUCTIVE MATERIALS
审中-公开
基本信息:
- 专利标题: INTEGRATED MUTLI-STEP GAP FILL AND ALL FEATURE PLANARIZATION FOR CONDUCTIVE MATERIALS
- 专利标题(中):集成的MUTLI-STEP GAP填充和所有导电材料的特征平面化
- 申请号:PCT/US0146449 申请日:2001-12-03
- 公开(公告)号:WO0250336A3 公开(公告)日:2005-01-06
- 发明人: HSU WEI-YUNG , CHEN LIANG-YUH , MORAD RATSON , CARL DANIEL A , SOMEKH SASSON
- 申请人: APPLIED MATERIALS INC
- 专利权人: APPLIED MATERIALS INC
- 当前专利权人: APPLIED MATERIALS INC
- 优先权: US73913900 2000-12-18
- 主分类号: B24B37/00
- IPC分类号: B24B37/00 ; B24B37/04 ; C25D5/00 ; C25D5/22 ; C25D7/12 ; H01L21/288 ; H01L21/304 ; H01L21/321 ; H01L21/768 ; C23C18/16 ; C25D5/02
摘要:
A method and apparatus is provided for depositing and planarizing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a partial enclosure, a permeable disc, a diffuser plate and optionally an anode. A substrate carrier is positionable above the partial enclosure and is adapted to move a substrate into and out of contact or close proximity with the permeable disc. The partial enclosure and the substrate carrier are rotatable to provide relative motion between a substrate and the permeable disc. In another aspect, a method is provided in which a substrate is positioned in a partial enclosure having an electrolyte therein at a first distance from a permeable disc. A current is optionally applied to the surface of the substrate and a first thickness is deposited on the substrate. Next, the substrate is positioned closer to the permeable disc and a second thickness is deposited on the substrate. During the deposition, the partial enclosure and the substrate are rotated relative one another.
摘要(中):
提供了一种用于沉积和平坦化衬底上的材料层的方法和装置。 在一个实施例中,提供了一种装置,其包括部分外壳,可渗透盘,漫射板和任选的阳极。 衬底载体可定位在部分外壳上方,并且适于将衬底移动到与可渗透盘接触或接近的位置。 部分外壳和基板载体可旋转以提供基板和可渗透盘之间的相对运动。 在另一方面,提供了一种方法,其中将基板定位在其中具有电解质的部分封闭体中,其中离开可渗透盘离第一距离。 任选地将电流施加到衬底的表面,并且在衬底上沉积第一厚度。 接下来,将基板定位成更靠近可渗透盘,并且在基板上沉积第二厚度。 在沉积期间,部分封闭物和基底相对彼此旋转。