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51. 发明申请

WO2016122004A1 METAL NANOWIRE, METHOD FOR SYNTHESIZING THE METAL NANOWIRE, AND TRANSPARENT ELECTRODE AND ORGANIC LIGHT EMITTING DIODE INCLUDING THE METAL NANOWIRE MANUFACTURED BY THE METHOD 审中-公开
标题翻译：金属纳米线，合成金属纳米线的方法，透明电极和有机发光二极管，包括通过该方法制造的金属纳米线
公开(公告)号：WO2016122004A1
公开(公告)日：2016-08-04
申请号：PCT/KR2015/000799
申请日：2015-01-26
申请人： DUKSAN HI-METAL CO., LTD.
发明人： YOO, Young Jo , PARK, Tae Heon , KIM, Da Eun , SON, Yoon Sang , CHOI, Yoon Soo
IPC分类号： H01L21/02 , H01L29/66
CPC分类号： H01L51/5215 , H01B1/02 , H01L21/02425 , H01L21/02428 , H01L21/0243 , H01L21/02554 , H01L21/0259 , H01L21/02628 , H01L51/5268
摘要： A metal nanowire according to an embodiment of the invention includes at least one bent portion. An angle (a) between an n-th wire portion and an (n+1)-th wire portion connected to the n-th wire portion through an n-th bent portion satisfies an inequation of 0°
摘要翻译：根据本发明的实施例的金属纳米线包括至少一个弯曲部分。通过第n个弯曲部连接到第n线部分的第n线部分和第（n + 1）线部分之间的角度（a）满足0°

52. 发明申请

WO2014159036A1 LIGHT EMITTING DEVICE ON METAL FOAM SUBSTRATE 审中-公开
标题翻译：金属泡沫基材上的发光装置
公开(公告)号：WO2014159036A1
公开(公告)日：2014-10-02
申请号：PCT/US2014/021649
申请日：2014-03-07
申请人： THE GOVERNMENT OF THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE NAVY , MASTRO, Michael, A. , KUB, Francis, J.
发明人： MASTRO, Michael, A. , KUB, Francis, J.
IPC分类号： H01L33/36
CPC分类号： H01L21/02425 , H01L21/02428 , H01L21/02458 , H01L21/02521 , H01L21/0254 , H01L21/02603 , H01L21/02653 , H01L33/005 , H01L33/02 , H01L33/24
摘要： A light emitting device having an electrically conductive metal foam or porous metal substrate, one or more light emitting nanowires in contact with the substrate, and a metal or conductive oxide contact layer in contact with each nanowire junction opposite of the substrate. More specifically, a light emitting device having an electrically conductive metal foam substrate, one or more light emitting nanowires in contact with the substrate, a quantum well on the nanowire(s), a p-type shell on the quantum well, a metal or conductive oxide contact layer in contact with the shell, and an energy down-converting material. Also disclosed is the related method of making a light emitting device.
摘要翻译：具有导电金属泡沫或多孔金属基底的发光器件，与衬底接触的一个或多个发光纳米线以及与衬底相对的每个纳米线结的接触的金属或导电氧化物接触层。更具体地说，具有导电金属泡沫衬底，与衬底接触的一个或多个发光纳米线，纳米线上的量子阱，量子阱上的p型壳，金属或与外壳接触的导电氧化物接触层和能量下变换材料。还公开了制造发光器件的相关方法。

53. 发明申请

WO2014093938A1 FABRICATION OF THREE-DIMENSIONAL HIGH SURFACE AREA ELECTRODES 审中-公开
标题翻译：三维高表面电极的制造
公开(公告)号：WO2014093938A1
公开(公告)日：2014-06-19
申请号：PCT/US2013/075192
申请日：2013-12-13
申请人： CALIFORNIA INSTITUTE OF TECHNOLOGY
发明人： MUJEEB-U-RAHMAN, Muhammad , SCHERER, Axel
IPC分类号： H01L21/28
CPC分类号： H01L21/285 , A61B2562/125 , B81C1/00111 , B81C1/0038 , H01L21/02425 , H01L21/28556 , H01L24/14 , H01L29/41 , H01L31/00 , H01L33/387 , H01L2224/1401 , H01L2924/11
摘要： A method for fabricating three dimensional high surface electrodes is described. The methods including the steps: designing the pillars; selecting a material for the formation of the pillars; patterning the material; transferring the pattern to form the pillars; insulating the pillars and providing a metal layer for increased conductivity. Alternative methods for fabrication of the electrodes and fabrication of the electrodes using CMOS are also described.
摘要翻译：描述制造三维高表面电极的方法。方法包括步骤：设计支柱; 选择用于形成支柱的材料; 图案化材料; 转移模式形成支柱; 绝缘柱并提供用于增加导电性的金属层。还描述了用于制造电极和使用CMOS制造电极的替代方法。

54. 发明申请

WO2014045090A1 METHODS OF FORMING III-V SEMICONDUCTOR STRUCTURES USING MULTIPLE SUBSTRATES, AND SEMICONDUCTOR DEVICES FABRICATED USING SUCH METHODS 审中-公开
标题翻译：使用多个基板形成III-V半导体结构的方法和使用这种方法制作的半导体器件
公开(公告)号：WO2014045090A1
公开(公告)日：2014-03-27
申请号：PCT/IB2013/001911
申请日：2013-09-03
申请人： SOITEC
发明人： SADAKA, Mariam
IPC分类号： H01L29/778 , H01L21/20 , H01L21/762 , H01L23/528 , H01L29/417 , H01L29/20
CPC分类号： H01L29/7787 , H01L21/02425 , H01L21/0254 , H01L21/6835 , H01L21/76256 , H01L23/36 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/73 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/4175 , H01L29/66462 , H01L29/7781 , H01L29/7788 , H01L2221/68327 , H01L2221/6834 , H01L2224/0401 , H01L2224/05025 , H01L2224/131 , H01L2224/16237 , H01L2224/29147 , H01L2224/29184 , H01L2224/2929 , H01L2224/293 , H01L2224/32245 , H01L2224/73253 , H01L2224/81191 , H01L2224/81203 , H01L2224/81815 , H01L2224/83851 , H01L2224/83895 , H01L2924/1461 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： Methods of forming semiconductor devices include epitaxially growing a lll-V base layer (120) over a first substrate in a first deposition chamber. The lll-V base layer is transferred from the first substrate to a second substrate (124), and at least one lll-V device layer is epitaxially grown on the lll-V base layer in a second deposition chamber separate from the first deposition chamber while the lll-V base layer is disposed on the second substrate. The first substrate exhibits an average coefficient of thermal expansion (CTE) closer to an average CTE exhibited by the lll-V base layer than an average CTE exhibited by the second substrate. Semiconductor devices may be fabricated using such methods.
摘要翻译：形成半导体器件的方法包括在第一沉积室中的第一衬底上外延生长III-V基极层（120）。 111V基底层从第一衬底转移到第二衬底（124），并且在与第一沉积室分开的第二沉积室中在111-V基底层上外延生长至少一个III-V器件层而111-V基层设置在第二基板上。第一衬底的平均热膨胀系数（CTE）比第二衬底显示的平均CTE更接近于III-V基层所表现的平均CTE。可以使用这样的方法制造半导体器件。

55. 发明申请

WO2013016215A2 ELECTROCHEMICAL LIQUID-LIQUID-SOLID DEPOSITION PROCESSES FOR PRODUCTION OF GROUP IV SEMICONDUCTOR MATERIALS 审中-公开
标题翻译：用于生产IV族半导体材料的电化学液体 - 固体沉积工艺
公开(公告)号：WO2013016215A2
公开(公告)日：2013-01-31
申请号：PCT/US2012/047666
申请日：2012-07-20
申请人： THE REGENTS OF THE UNIVERSITY OF MICHIGAN , MALDONADO, Stephen , CARIM, Azhar
发明人： MALDONADO, Stephen , CARIM, Azhar
IPC分类号： H01L21/208
CPC分类号： C25B1/006 , C25C1/22 , C30B7/12 , C30B29/06 , C30B29/08 , C30B29/52 , H01L21/02425 , H01L21/02532 , H01L21/02603 , H01L21/02628 , H01L21/02645 , H01L21/02653
摘要： An electrochemical liquid-liquid-solid (LLS) process that produces unlimited amounts of crystalline semiconductor, such as Ge or Si, from aqueous or polar solutions with tunable nanostructured shapes without any physical or chemical templating agent is presented. Dissolution into, saturation within, and precipitation of the semiconductor from a liquid electrode (e.g., Hg pool) or near an electrode comprising metallic nanoparticles (e.g., In nanoparticles) yields a polycrystalline semiconductor material, as deposited. Such a process can be conducted at conditions, in a single step, and under electrochemical control, while affording control over formation of a variety of material morphologies. Materials formed by such processes are also provided.
摘要翻译：提出了一种电化学液 - 液 - 固体（LLS）工艺，其从具有可调谐纳米结构形状的水性或极性溶液中产生无限量的晶体半导体，例如Ge或Si，而没有任何物理或化学模板剂。从液体电极（例如，Hg池）或包含金属纳米颗粒（例如，In纳米颗粒）的电极附近溶解，饱和和半导体沉淀产生沉积的多晶半导体材料。这种方法可以在单一步骤的条件下和在电化学控制下进行，同时可以控制多种材料形态的形成。还提供了由这些方法形成的材料。

56. 发明申请

WO2013005427A1 バッファ層及びそれを備えた光電変換素子の製造方法、光電変換素子审中-公开
标题翻译：缓冲层，制造包含它们的光电转换元件的方法和光电转换元件
公开(公告)号：WO2013005427A1
公开(公告)日：2013-01-10
申请号：PCT/JP2012/004327
申请日：2012-07-04
申请人：富士フイルム株式会社 , 河野哲夫
发明人：河野　哲夫
IPC分类号： H01L31/04 , H01L21/368
CPC分类号： H01L21/02628 , H01L21/02425 , H01L21/02485 , H01L21/02557 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要：【課題】ＣＢＤ法によるバッファ層の成膜において、密着性の良好なバッファ層を、粒子状固形物の生成を抑制し、生産性良く製造する。【解決手段】【解決手段】基板（１０）上に、下部電極層（２０）と、化合物半導体を主成分とする光電変換半導体層（３０）と、バッファ層（４０）と、透光性導電層（５０）が積層された光電変換素子（１，１'）におけるバッファ層（４０）の製造方法において、光電変換半導体層（３０）上に金属塩水和物を含む前駆体層（４０Ｒ）を塗布成膜する工程（Ａ）と、前駆体層（４０Ｒ）を不溶化処理する工程（Ｂ）と、不溶化処理された基板（１０）の少なくとも前駆体層（４０Ｐ）側の表面を、硫黄源を含むアルカリ性の反応液（Ｌ１，Ｌ２）に浸漬させて、バッファ層（４０）を化学浴析出法により形成する工程（Ｃ）とを備える。
摘要翻译： [问题]通过CBD法在抑制缓冲层成膜的同时抑制颗粒固体的产生，生产出具有良好粘附性的缓冲层。 [解决方案]一种在光电转换元件（1,1'）中制造缓冲层（40）的方法，其中主要由化合物半导体（1）组成的下电极层（20），光电转换半导体层（30），缓冲层（40）和透光性导电层（50）层叠在基板（10）上。该方法包括：步骤（A），其中通过涂覆在光电转换半导体层（30）上形成含有金属盐水合物的前体层（40R）; 步骤（B），其中所述前体层（40R）不溶; 以及步骤（C），其中至少将不溶解基材（10）的前体层（40P）侧表面浸渍在含有硫源的碱性反应液（L1，L2）中，从而形成缓冲层（40 ）通过化学浴沉积法。

57. 发明申请

WO2012021677A3 LARGE-SCALE GRAPHENE SHEET: ARTICLES, COMPOSITIONS, METHODS AND DEVICES INCORPORATING SAME 审中-公开
标题翻译：大规格石墨片：与其合成的文章，组成，方法和设备
公开(公告)号：WO2012021677A3
公开(公告)日：2012-08-09
申请号：PCT/US2011047369
申请日：2011-08-11
申请人： UNIV PENNSYLVANIA , JOHNSON ALAN T , LUO ZHENGTANG
发明人： JOHNSON ALAN T , LUO ZHENGTANG
IPC分类号： C01B31/00
CPC分类号： C01B32/186 , B82Y30/00 , B82Y40/00 , C01B32/194 , C01B2204/02 , C01B2204/20 , C01B2204/32 , H01L21/02425 , H01L21/0243 , H01L21/02527 , H01L21/0262 , H01L21/02658 , H01L21/28506 , H01L29/1606 , H01L29/7782
摘要： Provided are methods for growing large-size, uniform graphene layers on planarized substrates using Chemical Vapor Deposition (CVD) at atmospheric pressure; graphene produced according to these methods may have a single layer content exceeding 95%. Field effect transistors fabricated by the inventive process have room temperature hole mobilities that are a factor of 2-5 larger than those measured for samples grown on commercially-available copper foil substrates.
摘要翻译：提供了在大气压下使用化学气相沉积（CVD）在平坦化衬底上生长大尺寸均匀石墨烯层的方法; 根据这些方法生产的石墨烯可以具有超过95％的单层含量。通过本发明方法制造的场效应晶体管具有比在商业上可获得的铜箔衬底上生长的样品测量的室温孔迁移率高2-5倍的室温空穴迁移率。

58. 发明申请

WO2012031238A3 UNIFORM MULTILAYER GRAPHENE BY CHEMICAL VAPOR DEPOSITION 审中-公开
标题翻译：通过化学蒸气沉积法制成均匀的多层石墨
公开(公告)号：WO2012031238A3
公开(公告)日：2012-06-07
申请号：PCT/US2011050396
申请日：2011-09-02
申请人： UNIV MICHIGAN , ZHONG ZHAOHUI , LEE SEUNGHYUN , LEE KYUNGHOON
发明人： ZHONG ZHAOHUI , LEE SEUNGHYUN , LEE KYUNGHOON
IPC分类号： C23C16/44 , C01B31/04 , C23C16/26 , C23C16/448 , H01L21/205
CPC分类号： H01L21/0262 , B82Y30/00 , B82Y40/00 , C01B32/184 , C01B32/186 , C01B2204/32 , C23C16/0209 , C23C16/26 , C23C16/45502 , C23C16/45557 , H01L21/02381 , H01L21/02425 , H01L21/02488 , H01L21/02527 , Y10T428/30
摘要： A method of producing uniform multilayer graphene by chemical vapor deposition (CVD) is provided. The method is limited in size only by CVD reaction chamber size and is scalable to produce multilayer graphene films on a wafer scale that have the same number of layers of graphene throughout substantially the entire film. Uniform bilayer graphene may be produced using a method that does not require assembly of independently produced single layer graphene. The method includes a CVD process wherein a reaction gas is flowed in the chamber at a relatively low pressure compared to conventional processes and the temperature in the reaction chamber is thereafter decreased relatively slowly compared to conventional processes. One application for uniform multilayer graphene is transparent conductors. In processes that require multiple transfers of single layer graphene to achieve multilayer graphene structures, the disclosed method can reduce the number of process steps by at least half.
摘要翻译：提供了通过化学气相沉积（CVD）制造均匀的多层石墨烯的方法。该方法仅通过CVD反应室尺寸限制，并且可扩展以在基片上生产具有相同数量的石墨烯层的多晶石墨烯薄膜。可以使用不需要组装独立生产的单层石墨烯的方法来生产均匀的双层石墨烯。该方法包括CVD方法，其中与常规方法相比，反应气体在相对低的压力下在室中流动，然后与常规方法相比，反应室中的温度相对较慢地降低。均匀多层石墨烯的一个应用是透明导体。在需要多次转移单层石墨烯以实现多层石墨烯结构的工艺中，所公开的方法可以将工艺步骤的数量减少至少一半。

59. 发明申请

WO2011137216A3 METHOD OF MANUFACTURE OF CHALCOGENIDE-BASED PHOTOVOLTAIC CELLS 审中-公开
标题翻译：基于聚合物的光伏电池的制备方法
公开(公告)号：WO2011137216A3
公开(公告)日：2012-04-12
申请号：PCT/US2011034269
申请日：2011-04-28
申请人： DOW GLOBAL TECHNOLOGIES LLC , BRYDEN TODD R , FENTON JEFFREY L JR , MITCHELL GARY E , THOMPSON KIRK R , MILLS MICHAEL E , PARRILLO DAVID J
发明人： BRYDEN TODD R , FENTON JEFFREY L JR , MITCHELL GARY E , THOMPSON KIRK R , MILLS MICHAEL E , PARRILLO DAVID J
IPC分类号： H01L31/0749 , C23C14/06 , H01L21/02 , H01L31/032 , H01L31/0336 , H01L31/18
CPC分类号： H01L31/18 , C23C14/0629 , C23C14/3414 , H01L21/0237 , H01L21/02425 , H01L21/02485 , H01L21/02557 , H01L21/02631 , H01L31/022466 , H01L31/0322 , H01L31/03928 , H01L31/0749 , H01L31/1884 , Y02E10/541 , Y02P70/521
摘要： The invention is a method of forming a cadmium sulfide based buffer on a copper chalcogenide based absorber in making a photovoltaic cell. The buffer is sputtered at relatively high pressures. The resulting cell has good efficiency and according to one embodiment is characterized by a narrow interface between the absorber and buffer layers. The buffer is further characterized according to a second embodiment by a relatively high oxygen content.
摘要翻译：本发明是一种在制造光伏电池的同时在铜硫属元素化物系吸收体上形成硫化镉基缓冲剂的方法。缓冲液在相对高的压力下溅射。所得到的电池具有良好的效率，并且根据一个实施例的特征在于吸收体和缓冲层之间的窄界面。根据第二实施方案，缓冲剂通过相对高的氧含量被进一步表征。

60. 发明申请

WO2011090959A2 CONTROL OF COMPOSITION PROFILES IN ANNEALED CIGS ABSORBERS 审中-公开
标题翻译：厌氧消化吸收器中组成型号的控制
公开(公告)号：WO2011090959A2
公开(公告)日：2011-07-28
申请号：PCT/US2011/021611
申请日：2011-01-19
申请人： AQT SOLAR, INC. , MUNTEANU, Mariana, Rodica
发明人： MUNTEANU, Mariana, Rodica
IPC分类号： H01L31/18 , H01L31/032 , H01L21/20
CPC分类号： H01L31/18 , H01L21/02425 , H01L21/02568 , H01L21/02614 , H01L21/02631 , H01L31/0322 , H01L31/065 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Particular embodiments of the present disclosure relate to the use of sputtering, and more particularly magnetron sputtering, in forming absorber structures, and particular multilayer absorber structures, that are subsequently annealed to obtain desired composition profiles across the absorber structures for use in photovoltaic devices.
摘要翻译：本公开的特定实施例涉及在形成吸收体结构和特定的多层吸收体结构中使用溅射，更具体而言是磁控管溅射，随后进行退火以获得跨越用于光伏器件的吸收体结构的期望的组成分布。

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