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31. 发明申请

WO2013104723A1 A NANOWIRE DEVICE HAVING GRAPHENE TOP AND BOTTOM ELECTRODES AND METHOD OF MAKING SUCH A DEVICE 审中-公开
标题翻译：具有石墨顶部和底部电极的纳米装置及其制造方法
公开(公告)号：WO2013104723A1
公开(公告)日：2013-07-18
申请号：PCT/EP2013/050419
申请日：2013-01-10
申请人： NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY (NTNU)
发明人： WEMAN, Helge , FIMLAND, Bjørn-Ove , KIM, Dong Chul
IPC分类号： H01L29/66 , B82Y10/00 , B82Y40/00 , H01L29/06 , H01L29/16 , H01L29/41
CPC分类号： H01L33/24 , B82Y10/00 , B82Y40/00 , C30B25/005 , C30B29/42 , H01L29/0676 , H01L29/1606 , H01L29/413 , H01L29/66469 , H01L31/022466 , H01L31/0304 , H01L31/035281 , H01L31/036 , H01L31/1852 , H01L31/1884 , H01L33/0066 , H01L33/18 , H01L33/30 , H01L33/42 , H01L2933/0016
摘要： A composition of matter comprising a plurality of nanowires on a substrate, said nanowires having been grown epitaxially on said substrate in the presence of a metal catalyst such that a catalyst deposit is located at the top of at least some of said nanowires, wherein said nanowires comprise at least one group lll-V compound or at least one group II-VI compound or comprises at least one non carbon group IV element; and wherein a graphitic layer is in contact with at least some of the catalyst deposits on top of said nanowires.
摘要翻译：一种在衬底上包含多个纳米线的物质组成，所述纳米线已经在金属催化剂存在下外延生长在所述衬底上，使得催化剂沉积物位于所述纳米线的至少一部分的顶部，其中所述纳米线包含至少一种III-V族化合物或至少一种II-VI族化合物或包含至少一种非碳基IV族元素; 并且其中石墨层与所述纳米线顶部上的至少一些催化剂沉积物接触。

32. 发明申请

WO2012131496A3 IMPROVED EMITTER STRUCTURE BASED ON SILICONE COMPONENTS TO BE USED IN A PHOTOVOLTAIC CONVERTER AND A METHOD FOR PRODUCTION OF THE PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：基于在光伏转换器中使用的硅酮组分的改进的发射体结构和用于生产光伏器件的方法
公开(公告)号：WO2012131496A3
公开(公告)日：2013-07-11
申请号：PCT/IB2012000867
申请日：2012-03-22
申请人： KUZNICKI ZBIGNIEW , MEYRUEIS PATRICK
发明人： KUZNICKI ZBIGNIEW , MEYRUEIS PATRICK
IPC分类号： H01L31/028 , H01L31/0352 , H01L31/18
CPC分类号： H01L31/035254 , B82Y20/00 , B82Y40/00 , H01L31/02363 , H01L31/028 , H01L31/035245 , H01L31/035281 , H01L31/03529 , H01L31/036 , H01L31/0376 , H01L31/03762 , H01L31/03845 , H01L31/1804 , H01L31/1864 , H01L31/202 , H01L31/208 , Y02E10/50 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： This invention aims to reduce and preferably to cancel the carrier collection limit effect in order to considerably encrease the conversion efficiency. This improvement is achieved by a suitable modification of the amorphized layer thickness or even by discontinuities separating amorphizing beams or amorphized nanopellets.
摘要翻译：本发明旨在减少并优选地消除载体收集极限效应，以便显着增加转化效率。这种改进通过非晶化层厚度的适当改性或甚至分离非晶化束或非晶化纳米粒子的不连续性来实现。

33. 发明申请

WO2013079976A1 PRODUCTION OF MONO-CRYSTALLINE SILICON 审中-公开
标题翻译：单晶硅的生产
公开(公告)号：WO2013079976A1
公开(公告)日：2013-06-06
申请号：PCT/GB2012/052985
申请日：2012-12-03
申请人： REC WAFER PTE. LTD , GILL JENNINGS & EVERY LLP
发明人： SAUAR, Erik , FEFELOV, Oleg , LODE, Canel
IPC分类号： C30B11/14 , C30B29/06
CPC分类号： C30B11/14 , B28D5/045 , C30B11/002 , C30B11/02 , C30B15/00 , C30B29/06 , H01L31/0312 , H01L31/036 , Y10T117/1092
摘要： A crystalline silicon ingot is produced using a directional solidification process. In particular, a crucible is loaded with silicon feedstock above a seed layer of uniform crystalline orientation. The silicon feedstock and an upper part of the seed layer are melted forming molten material in the crucible. This molten material is then solidified, during which process a crystalline structure based on that of the seed layer is formed in a silicon ingot. The seed layer is arranged such that a {110} crystallographic plane is normal to the direction of solidification. It is found that offers a substantial improvement in the proportion of mono- crystalline silicon formed in the ingot as compared to alternative crystallographic orientations and leads to highly uniform solar cells after an isotropic texture.
摘要翻译：使用定向凝固工艺制造晶体硅锭。特别地，坩埚在均匀晶体取向的种子层上方加载有硅原料。将硅原料和种子层的上部熔化成在坩埚中形成熔融材料。然后将该熔融材料固化，在此过程中，以硅锭形成基于籽晶层的晶体结构。种子层被布置成使得{110}晶面垂直于凝固方向。已经发现，与替代晶体取向相比，在锭中形成的单晶硅的比例提供了显着的改进，并且导致各向同性织构之后的高度均匀的太阳能电池。

34. 发明申请

WO2012165500A1 光電変換素子およびその製造方法审中-公开
标题翻译：光电转换元件及其制造方法
公开(公告)号：WO2012165500A1
公开(公告)日：2012-12-06
申请号：PCT/JP2012/063978
申请日：2012-05-30
申请人：京セラ株式会社 , 大前智史 , 黒須敬太
发明人：大前　智史 , 黒須　敬太
IPC分类号： H01L31/04
CPC分类号： H01L31/035272 , H01L31/0322 , H01L31/036 , H01L31/0465 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要：　【課題】　光電変換効率が高い光電変換素子を安定して得るのが困難であった。　【解決手段】　少なくともＣｕを含むＩｂ族元素、IIIｂ族元素およびVIｂ族元素を有する光電変換可能な化合物半導体を含む光吸収層と、該光吸収層の一方の表面側に設けられた、該光吸収層とは面方位が異なる、少なくともＣｕを含むＩｂ族元素、Ｃｄ、ＺｎおよびＩｎから選ばれる少なくとも１種の元素ならびにVIｂ族元素を含む半導体層とを有する光電変換素子であって、前記光吸収層から接合界面を越えて前記半導体層へ向かってＣｕ組成が減少する領域を有する。
摘要翻译： [问题]难以稳定地获得光转换效率高的光电转换元件。在本发明中，光电转换器具有以下：含有能够进行光电转换的化合物半导体的光吸收层，并且包含至少包含Cu，Ibb族元素和VIb族元素的Ib族元素 ; 以及设置在所述光吸收层的一个表面侧并且具有与所述光吸收层的取向不同的取向的半导体层，其中所述半导体层包含至少包含Cu的基团Ib元素，至少一种选自 Cd，Zn和In以及VIb族元素。光电转换元件具有从吸光层通过接合界面朝向半导体层的Cu比降低的区域。

35. 发明申请

WO2008131313A3 MATERIALS SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES 审中-公开
标题翻译：用于光电子器件的材料系统和方法
公开(公告)号：WO2008131313A3
公开(公告)日：2008-12-11
申请号：PCT/US2008060947
申请日：2008-04-18
申请人： INVISAGE TECHNOLOGIES INC , SARGENT EDWARD HARTLEY , KLEM ETHAN JACOB DUKENFIELD , MACNEIL DEAN DELEHANTY , SNELGROVE WILLIAM MARTIN , PATTANTYUS-ABRAHAM ANDRAS GEZA , KONSTANTATOS GERASIMOS , CLIFFORD JASON PAUL , TANG JIANG , JOHNSTON KEITH WILLIAM , LEVINA LARISSA , HINDS SEAN O'REILLY , FIFE KEITH GLEN , AGHAJANIAN ARTHUR , BRADING MICHAEL CHARLES , DELLA NAVE PIERRE HENRI RENE , DONG MILTON , HUNTER KEVIN , IVANOV IGOR CONSTANTIN , LEE JEES JAN YOUNG , OLIVER STEVEN DAVID , TIAN HUI , ADAMS IAN STUART , HOOGLAND SJOERD , FISCHER ARMIN , CHIK RAYMOND
发明人： SARGENT EDWARD HARTLEY , KLEM ETHAN JACOB DUKENFIELD , MACNEIL DEAN DELEHANTY , SNELGROVE WILLIAM MARTIN , PATTANTYUS-ABRAHAM ANDRAS GEZA , KONSTANTATOS GERASIMOS , CLIFFORD JASON PAUL , TANG JIANG , JOHNSTON KEITH WILLIAM , LEVINA LARISSA , HINDS SEAN O'REILLY , FIFE KEITH GLEN , AGHAJANIAN ARTHUR , BRADING MICHAEL CHARLES , DELLA NAVE PIERRE HENRI RENE , DONG MILTON , HUNTER KEVIN , IVANOV IGOR CONSTANTIN , LEE JEES JAN YOUNG , OLIVER STEVEN DAVID , TIAN HUI , ADAMS IAN STUART , HOOGLAND SJOERD , FISCHER ARMIN , CHIK RAYMOND
IPC分类号： H01L27/14
CPC分类号： H01L31/1013 , H01L27/14601 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14647 , H01L27/14652 , H01L27/14687 , H01L27/14692 , H01L31/036
摘要： A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is ovei at least a poition of the integrated circuit, and a second optically sensitive layer is over the fust optically sensitive layer Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers The signal is related to the number of photons received by the respective optically sensitive layer
摘要翻译：将描述光电探测器以及相应的材料，系统和方法。光电检测器包括集成电路和至少两个光敏层。第一光敏层至少是集成电路的一部分，并且第二光敏层位于第一光敏层上方。每个光敏层介于两个电极之间。两个电极包括相应的第一电极和相应的第二电极。集成电路选择性地向电极施加偏压并从光敏层读取信号。信号与由相应的光敏层接收的光子的数量有关

36. 发明申请

WO2008108981A1 HETERO-CRYSTALLINE SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME 审中-公开
标题翻译：异质结晶半导体器件及其制造方法
公开(公告)号：WO2008108981A1
公开(公告)日：2008-09-12
申请号：PCT/US2008/002694
申请日：2008-02-28
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P. , KOBAYASHI, Nobuhiko , WANG, Shih-Yuan
发明人： KOBAYASHI, Nobuhiko , WANG, Shih-Yuan
IPC分类号： H01L21/20 , B82B3/00 , B82B1/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/0237 , H01L21/02521 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/068 , H01L31/035281 , H01L31/036 , H01L33/18 , Y02E10/50
摘要： A hetero-crystalline semiconductor device 100 and a method 200 of making the same include a non-single crystalline semiconductor layer 110, 140 and a nanostructure layer 120 that comprises a single crystalline semiconductor nanostructure 122, 124 integral to a crystallite 112 of the non-single crystalline semiconductor layer 110. 140.
摘要翻译：异相半导体器件100和制造其的方法200包括非单晶半导体层110,140和纳米结构层120，纳米结构层120包括与非晶体半导体层130的微晶112成一体的单晶半导体纳米结构122,124，单晶半导体层110。

37. 发明申请

WO2007044322A2 CONDUCTIVE LAYER FOR BIAXIALLY ORIENTED SEMICONDUCTOR FILM GROWTH 审中-公开
标题翻译：用于双向导向的半导体膜生长的导电层
公开(公告)号：WO2007044322A2
公开(公告)日：2007-04-19
申请号：PCT/US2006038586
申请日：2006-09-29
申请人： LOS ALAMOS NAT SECURITY LLC , FINDIKOGLU ALP T , MATIAS VLADIMIR
发明人： FINDIKOGLU ALP T , MATIAS VLADIMIR
IPC分类号： H01L27/12 , C03C14/00
CPC分类号： H01L31/022408 , C03C14/008 , C03C2214/32 , H01L31/022466 , H01L31/036 , H01L31/1884 , Y02E10/50
摘要： A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.
摘要翻译：用于双轴取向半导体膜生长的导电层和诸如光电检测器，光伏电池或发光二极管（LED）的薄膜半导体结构，其包括设置在导电层上的晶体学取向的半导体膜。薄膜半导体结构包括：基板; 沉积在基板上的第一电极; 以及外延沉积在第一电极上的半导体层。第一电极包括沉积在衬底上的模板层和外延沉积在模板层上的缓冲层。模板层包括导电并具有岩盐晶体结构的第一金属氮化物，并且缓冲层包括导电的第二金属氮化物。半导体层外延沉积在缓冲层上。还描述了制造这种薄膜半导体结构的方法。

38. 发明申请

WO2006137940A2 METHODS OF MAKING FUNCTIONALIZED NANORODS 审中-公开
标题翻译：制备功能性纳米多糖的方法
公开(公告)号：WO2006137940A2
公开(公告)日：2006-12-28
申请号：PCT/US2005/041050
申请日：2005-11-10
申请人： THE REGENTS OF THE UNIVERSITY OF CALIFORNIA , GUR, Ilan , MILLIRON, Delia , ALIVISATOS, Paul, A. , LIU, Haitao
发明人： GUR, Ilan , MILLIRON, Delia , ALIVISATOS, Paul, A. , LIU, Haitao
IPC分类号： F21V9/16
CPC分类号： H01L51/4266 , B82Y30/00 , C08G2261/3223 , C08L65/00 , C23C18/1662 , C23C18/1844 , C23C18/1893 , C23C18/31 , C23C18/44 , H01L31/036 , H01L51/0036 , Y02E10/549 , Y02P70/521 , Y10T428/31504 , Y10T428/31678
摘要： A process for forming functionalized nanorods. The process includes providing a substrate, modifying the substrate by depositing a self-assembled monolayer of a bi-functional molecule on the substrate, wherein the monolayer is chosen such that one side of the bi-functional molecule binds to the substrate surface and the other side shows an independent affinity for binding to a nanocrystal surface, so as to form a modified substrate. The process further includes contacting the modified substrate with a solution containing nanocrystal colloids, forming a bound monolayer of nanocrystals on the substrate surface, depositing a polymer layer over the monolayer of nanocrystals to partially cover the monolayer of nanocrystals, so as to leave a layer of exposed nanocrystals, functionalizing the exposed nanocrystals, to form functionalized nanocrystals, and then releasing the functionalized nanocrystals from the substrate.
摘要翻译：一种形成官能化纳米棒的方法。该方法包括提供底物，通过在衬底上沉积双功能分子的自组装单层来修饰衬底，其中选择单层使得双功能分子的一侧结合到衬底表面而另一侧侧表现出与纳米晶体表面结合的独立亲和性，从而形成改性底物。该方法还包括使修饰的底物与含有纳米晶体胶体的溶液接触，在衬底表面上形成结合的纳米晶体单层，在纳米晶体的单层上沉积聚合物层以部分地覆盖纳米晶体的单层，以便留下一层暴露的纳米晶体，官能化暴露的纳米晶体，以形成官能化的纳米晶体，然后从底物释放官能化的纳米晶体。

39. 发明申请

WO2003009393A1 ELECTROMAGNETIC RADIATION SENSING WITH SINGLE CRYSTAL SiC 审中-公开
标题翻译：电磁辐射感应单晶SiC
公开(公告)号：WO2003009393A1
公开(公告)日：2003-01-30
申请号：PCT/US2002/015058
申请日：2002-05-13
申请人： HEETRONIX
发明人： PARSONS, James, D.
IPC分类号： H01L31/0256
CPC分类号： H01L31/0256 , H01L31/0312 , H01L31/036 , H01L31/09
摘要： Single crystal SiC (6) at least 200 micrometers thick is employed to detect electromagnetic radiation (4) having a wavelength less than about 10 micrometers via an acoustic absorption mechanism. Applications include IR radiation sensing, contactless temperature sensing and an IR controller varistor.
摘要翻译：使用至少200微米厚的单晶SiC（6）来通过声吸收机制检测波长小于约10微米的电磁辐射（4）。应用包括红外辐射检测，非接触式温度检测和IR控制器压敏电阻。

40. 发明申请

WO1995017016A1 NEW TYPE OF SILICON SEMICONDUCTOR PLATE AND PROCESS FOR PRODUCING THE SAME 审中-公开
标题翻译：新型硅半导体晶片及其制造方法
公开(公告)号：WO1995017016A1
公开(公告)日：1995-06-22
申请号：PCT/DE1994001489
申请日：1994-12-14
申请人： SIEMENS AKTIENGESELLSCHAFT , ENDRÖS, Arthur , MARTINELLI, Giuliano
发明人： SIEMENS AKTIENGESELLSCHAFT
IPC分类号： H01L31/068
CPC分类号： C30B29/06 , C30B15/36 , H01L31/036 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521 , Y10S117/902 , Y10S438/973
摘要： A silicon semiconductor wafer is made up of three mutually inclined monocrystalline areas (6, 7, 8) that form three sectors of the wafer. Their interfaces and boundary lines extend radially towards each other and enclose angles (W6, W7, W8) of less than 180 DEG . Two of the interfaces form twin, first order grain boundaries between two crystal planes. This silicon semiconductor wafer is used to produce economic, high power solar cells.
摘要翻译：所以建议从三个相互倾斜的单晶区域（6，7，8，）一个Sililziumhalbleiterscheibe（晶片）以建立该晶片，它们的接口的这种形式的三个圆形扇区，并因此下线运行针对彼此径向和角（W6，W7，W8）一起形成小于180°。这里有两个各<111>晶面之间的第一阶的接口孪晶晶界的。硅晶片被用于生产低成本高效率的太阳能电池。

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