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11. 发明申请

WO2012026952A1 IN-SITU SYNTHESIS AND DEPOSITION OF BATTERY ACTIVE LITHIUM MATERIALS BY SPRAYING 审中-公开
标题翻译：电喷活性锂离子电池的现场合成与沉积
公开(公告)号：WO2012026952A1
公开(公告)日：2012-03-01
申请号：PCT/US2010/058493
申请日：2010-12-01
申请人： APPLIED MATERIALS, INC. , SHANG, Quanyuan , YANG, Lu , BROWN, Karl, M. , OLGADO, Donald, J., K. , PEBENITO, Victor , BOLANDI, Hooman , ISHIKAWA, Tetsuya , BACHRACH, Robert, Z. , CHEN, Liang-Yuh
发明人： SHANG, Quanyuan , YANG, Lu , BROWN, Karl, M. , OLGADO, Donald, J., K. , PEBENITO, Victor , BOLANDI, Hooman , ISHIKAWA, Tetsuya , BACHRACH, Robert, Z. , CHEN, Liang-Yuh
IPC分类号： H01M4/04 , H01M10/0525 , H01G9/04
CPC分类号： H01G11/50 , H01G11/06 , H01M4/0419 , H01M10/04 , Y02E60/13
摘要： A method and apparatus for forming an electrochemical layer of a thin film battery is provided. A liquid precursor mixture comprising electrochemically active metals is reacted with oxygen to form electrochemically active metal oxides, which are deposited in a layer on a substrate. Carbon may be added to the mixture to control energy input to the reaction and to provide adhesion and conductivity between crystals deposited on the substrate. Conversion of precursors to deposition crystals may be accomplished in a two-stage process.
摘要翻译：提供一种用于形成薄膜电池的电化学层的方法和装置。将包含电化学活性金属的液体前体混合物与氧气反应以形成沉积在基底上的层中的电化学活性金属氧化物。可以向混合物中加入碳以控制反应的能量输入并提供沉积在基底上的晶体之间的粘附和导电性。前体转化为沉积晶体可以在两阶段工艺中完成。

12. 发明申请

WO2011044451A2 MULTI-GAS CENTRALLY COOLED SHOWERHEAD DESIGN 审中-公开
标题翻译：多气体中央冷却式喷头设计
公开(公告)号：WO2011044451A2
公开(公告)日：2011-04-14
申请号：PCT/US2010/051961
申请日：2010-10-08
申请人： APPLIED MATERIALS, INC. , SONG, Eddy , ISHIKAWA, Tetsuya
发明人： SONG, Eddy , ISHIKAWA, Tetsuya
IPC分类号： H01L21/205
CPC分类号： H01L21/67115 , B05B1/18 , C23C16/4411 , C23C16/455 , C23C16/45514 , C23C16/45565 , C23C16/45572 , C23C16/45574 , C23C16/45576 , C30B25/14 , C30B29/403 , H01L21/0254 , H01L21/0262
摘要： A method and apparatus for chemical vapor deposition and/or hydride vapor phase epitaxial deposition are provided. The apparatus generally include a lower bottom plate and an upper bottom plate defining a first plenum. The upper bottom plate and a mid-plate positioned above the upper bottom plate define a heat exchanging channel. The mid-plate and a top plate positioned above the mid-plate define a second plenum. A plurality of gas conduits extend from the second plenum through the heat exchanging channel and the first plenum. The method generally includes flowing a first gas through a first plenum into a processing region, and flowing a second gas through a second plenum into a processing region. A heat exchanging fluid is introduced to a heat exchanging channel disposed between the first plenum and the second plenum. The first gas and the second gas are then reacted to form a film on a substrate.
摘要翻译：提供了用于化学气相沉积和/或氢化物气相外延沉积的方法和设备。该设备通常包括限定第一充气室的下底板和上底板。上底板和位于上底板上方的中板限定了热交换通道。位于中间板上方的中板和顶板限定第二充气室。多个气体管道从第二充气室延伸穿过热交换通道和第一充气室。该方法通常包括使第一气体流过第一气室进入处理区域，以及使第二气体流过第二气室进入处理区域。热交换流体被引入设置在第一充气室和第二充气室之间的热交换通道。第一种气体和第二种气体然后反应以在基底上形成膜。

13. 发明申请

WO2010127156A2 METHOD OF FORMING IN-SITU PRE-GAN DEPOSITION LAYER IN HVPE 审中-公开
标题翻译：在HVPE中形成原位预沉积层的方法
公开(公告)号：WO2010127156A2
公开(公告)日：2010-11-04
申请号：PCT/US2010/033030
申请日：2010-04-29
申请人： APPLIED MATERIALS, INC. , MELNIK, Yuriy , KOJIRI, Hidehiro , KRYLIOUK, Olga , ISHIKAWA, Tetsuya
发明人： MELNIK, Yuriy , KOJIRI, Hidehiro , KRYLIOUK, Olga , ISHIKAWA, Tetsuya
IPC分类号： H01L21/205 , H01L33/02
CPC分类号： C23C16/4488 , C23C16/303 , C23C16/45523 , C30B25/02 , C30B29/403
摘要： A method and apparatus is provided for preparing a substrate for forming electronic devices incorporating III/V compound semiconductors. Elemental halogen gases, hydrogen halide gases, or other halogen or halide gases, are contacted with liquid or solid group III metals to form precursors which are reacted with nitrogen sources to deposit a nitride buffer layer on the substrate. The buffer layer, which may be a transition layer, may incorporate more than one group III metal, and may be deposited with amorphous or crystalline morphology. An amorphous layer may be partially or fully recrystallized by thermal treatment. Instead of a layer, a plurality of discrete nucleation sites may be formed, whose size, density, and distribution may be controlled. The nitrogen source may include reactive nitrogen compounds as well as active nitrogen from a remote plasma source. The composition of the buffer or transition layer may also vary with depth according to a desired profile.
摘要翻译：提供了一种用于制备用于形成结合III / V化合物半导体的电子器件的衬底的方法和装置。元素卤素气体，卤化氢气体或其它卤素或卤化物气体与液体或固体III族金属接触以形成与氮源反应以在衬底上沉积氮化物缓冲层的前体。可以是过渡层的缓冲层可以结合多于一个III族金属，并且可以以无定形或结晶形态沉积。非晶层可以通过热处理部分或完全重结晶。代替层，可以形成多个离散的成核位点，其尺寸，密度和分布可以被控制。氮源可以包括反应性氮化合物以及来自远程等离子体源的活性氮。缓冲层或过渡层的组成也可根据所需的轮廓随深度而变化。

14. 发明申请

WO2007021520A3 SUBSTRATE SUPPORT FOR INCREASING SUBSTRATE TEMPERATURE IN PLASMA REACTORS 审中-公开
公开(公告)号：WO2007021520A3
公开(公告)日：2007-02-22
申请号：PCT/US2006/029753
申请日：2006-07-28
申请人： APPLIED MATERIALS, INC. , LI, Shijian , LU, Siqing , CHOU, Irene , LEE, Young, S. , ISHIKAWA, Tetsuya
发明人： LI, Shijian , LU, Siqing , CHOU, Irene , LEE, Young, S. , ISHIKAWA, Tetsuya
IPC分类号： H01J37/32 , C23C14/50 , C23C16/458 , H01L21/683 , H01L21/02
摘要： A substrate processing system is provided. A housing (304) defines a processing chamber. A plasma (308) -generating system is operatively coupled to the processing chamber. A substrate support member (312) is disposed within the processing chamber and configured to hold a substrate (316) during substrate processing. A ceramic insert (320) is disposed over the substrate support member such that the ceramic insert is disposed between the substrate support member and the substrate during substrate processing. A gas-delivery system is configured to introduce gases into the processing chamber. A controller controls the plasma-generating system and the gas-delivery system.

15. 发明申请

WO2006069348A2 COAT/DEVELOP MODULE WITH SHARED DISPENSE 审中-公开
标题翻译： COAT /开发模块具有共享的配置
公开(公告)号：WO2006069348A2
公开(公告)日：2006-06-29
申请号：PCT/US2005/046906
申请日：2005-12-21
申请人： APPLIED MATERIALS, INC. , ISHIKAWA, Tetsuya , ROBERTS, Rick, J.
发明人： ISHIKAWA, Tetsuya , ROBERTS, Rick, J.
IPC分类号： B05D5/00
CPC分类号： H01L21/6719 , G03F7/3021 , H01L21/6715 , H01L21/67225
摘要： An apparatus for dispensing fluid during semiconductor substrate processing operations. The apparatus includes a central fluid dispense bank comprising a plurality of dispense nozzles coupled to a plurality of fluid sources and a first processing chamber positioned to a first side of the central fluid dispense bank. The apparatus also includes a second processing chamber positioned to a second side of the central fluid dispense bank and a dispense arm adapted to translate between the central fluid dispense bank, the first processing chamber, and the second processing chamber.
摘要翻译：一种用于在半导体衬底处理操作期间分配流体的装置。该装置包括中央流体分配库，其包括耦合到多个流体源的多个分配喷嘴和位于中央流体分配池的第一侧的第一处理室。该装置还包括位于中央流体分配库的第二侧的第二处理室和适于在中央流体分配库，第一处理室和第二处理室之间平移的分配臂。

16. 发明申请

WO2011014822A3 LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF FABRICATION 审中-公开
公开(公告)号：WO2011014822A3
公开(公告)日：2011-02-03
申请号：PCT/US2010/043993
申请日：2010-07-30
申请人： APPLIED MATERIALS, INC. , SU, Jie , KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , CHEN, Lu , ISHIKAWA, Tetsuya
发明人： SU, Jie , KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , CHEN, Lu , ISHIKAWA, Tetsuya
IPC分类号： H01L33/08 , H01L33/04 , H01L33/06
摘要： One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg-GaN) or magnesium doped aluminum gallium nitride (Mg-AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species.

17. 发明申请

WO2010129292A2 CLUSTER TOOL FOR LEDS 审中-公开
标题翻译： LED集群工具
公开(公告)号：WO2010129292A2
公开(公告)日：2010-11-11
申请号：PCT/US2010/032597
申请日：2010-04-27
申请人： APPLIED MATERIALS, INC. , NIJHAWAN, Sandeep , BURROWS, Brian, H. , ISHIKAWA, Tetsuya , KRYLIOUK, Olga , VASUDEV, Anand , SU, Jie , QUACH, David, H. , CHANG, Anzhong , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
发明人： NIJHAWAN, Sandeep , BURROWS, Brian, H. , ISHIKAWA, Tetsuya , KRYLIOUK, Olga , VASUDEV, Anand , SU, Jie , QUACH, David, H. , CHANG, Anzhong , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
IPC分类号： H01L33/00
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的第一层和氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层第二层通过MOCVD过程。

18. 发明申请

WO2010124261A4 SUBSTRATE PRETREATMENT FOR SUBSEQUENT HIGH TEMPERATURE GROUP III DEPOSITIONS 审中-公开
公开(公告)号：WO2010124261A4
公开(公告)日：2010-10-28
申请号：PCT/US2010/032313
申请日：2010-04-23
申请人： APPLIED MATERIALS, INC. , MELNIK, Yuriy , KRYLIOUK, Olga , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
发明人： MELNIK, Yuriy , KRYLIOUK, Olga , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
IPC分类号： H01L21/302 , H01L21/20 , H01L33/02 , H01S5/30
摘要： Embodiments of the present invention relate to apparatus and method for pretreatment of substrates for manufacturing devices such as light emitting diodes (LEDs) or laser diodes (LDs). One embodiment of the present invention comprises pre-treating the aluminum oxide containing substrate by exposing a surface of the aluminum oxide containing substrate to a pretreatment gas mixture, wherein the pretreatment gas mixture comprises ammonia (NH 3 ) and a halogen gas.

19. 发明申请

WO2010118295A2 HVPE PRECURSOR SOURCE HARDWARE 审中-公开
标题翻译： HVPE前驱源硬件
公开(公告)号：WO2010118295A2
公开(公告)日：2010-10-14
申请号：PCT/US2010/030496
申请日：2010-04-09
申请人： APPLIED MATERIALS, INC. , ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
发明人： ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C23C16/34 , C23C16/4401 , C23C16/45565 , C23C16/46 , C30B25/02 , C30B29/406 , Y10T137/479 , Y10T137/4807 , Y10T137/4824 , Y10T137/7504 , Y10T137/8376
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
摘要翻译：本文公开的实施例通常涉及HVPE室。腔室可以具有耦合到其上的两个分离的前体源，以允许沉积两个分开的层。例如，镓源和单独的铝源可以耦合到处理室以允许氮化镓和氮化铝分别沉积在相同处理室中的衬底上。氮可以在与镓和铝分开的位置和在较低温度下被引入处理室。不同的温度导致气体混合在一起，反应并沉积在基板上，在室壁上很少或没有沉积。

20. 发明申请

WO2010118219A2 METHODS AND APPARATUS FOR TREATING EFFLUENT 审中-公开
标题翻译：处理液体的方法和装置
公开(公告)号：WO2010118219A2
公开(公告)日：2010-10-14
申请号：PCT/US2010/030372
申请日：2010-04-08
申请人： APPLIED MATERIALS, INC. , HOOSHDARAN, Frank, F. , ISHIKAWA, Tetsuya , JUNG, Jay, J. , CHANDLER, Phil , CLARK, Daniel, O.
发明人： HOOSHDARAN, Frank, F. , ISHIKAWA, Tetsuya , JUNG, Jay, J. , CHANDLER, Phil , CLARK, Daniel, O.
IPC分类号： H01L21/00 , H01L21/02 , H01L31/18 , H01L33/02
CPC分类号： B01D53/68 , B01D2251/102 , B01D2251/202 , B01D2257/204 , B01D2257/206 , B01D2257/2066 , B01D2257/708 , B01D2258/0216 , Y02W10/37
摘要： Methods and apparatus for treating effluents in process systems are provided In some embodiments, a system for treating effluent includes a process chamber having a processing volume; an exhaust conduit coupled to the process chamber to remove an effluent from the processing volume; and a reactive species generator coupled to the exhaust conduit to inject a reactive species into the exhaust conduit to treat the effluent, wherein the reactive species generator generates a reactive species comprising at least one of singlet hydrogen, hydrogen ions or hydrogen radicals. In some embodiments, a method for treating effluent includes flowing an effluent from a processing volume of a process system through an exhaust conduit fluidly coupled to the processing volume; treating the effluent in the exhaust conduit with a reactive species comprising at least one of singlet hydrogen, hydrogen ions, or hydrogen radicals; and flowing the treated effluent to an abatement system.
摘要翻译：在一些实施例中，用于处理流出物的系统包括具有处理容积的处理室; 排出管道，其耦合到所述处理室以从所述处理容积中除去流出物; 以及反应物质发生器，其耦合到所述排气管道以将反应物质注入所述排气管道中以处理所述流出物，其中所述反应物种发生器产生包含单一氢，氢离子或氢自由基中的至少一种的活性物质。在一些实施方案中，用于处理流出物的方法包括将来自处理系统的处理体积的流出物流经流体耦合到处理体积的排气导管; 用包含单一氢，氢离子或氢自由基中的至少一种的活性物质处理排气管道中的流出物; 并将经处理的流出物流入减排系统。

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