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1. 发明授权

US08175131B2 Laser media with controlled concentration profile of active laser ions and method of making the same 有权
标题翻译：具有活性激光离子受控浓度分布的激光介质及其制备方法
公开(公告)号：US08175131B2
公开(公告)日：2012-05-08
申请号：US12397082
申请日：2009-03-03
申请人： Kevin W. Kirby , David S. Sumida
发明人： Kevin W. Kirby , David S. Sumida
IPC分类号： H01S3/14
CPC分类号： H01S3/0617 , C30B29/28 , C30B31/08 , C30B31/18 , H01S3/061 , H01S3/08045 , H01S3/1618 , H01S3/1643
摘要： A laser medium comprises a solid-state host material and dopant species provided within the solid-state host material. A first portion of the dopant species has a first valence state, and a second portion of the dopant species has a second valence state. In an embodiment, a concentration of the first portion of the dopant species decreases radially with increasing distance from a center of the medium, and a concentration of the second portion of the dopant species increases radially with increasing distance from the center of the medium. The laser medium further comprises impurities within the solid-state host material, the impurities converting the first portion of the dopant species having the first valence state into the second portion of dopant species having the second valence state.
摘要翻译：激光介质包括固态主体材料和设置在固态主体材料内的掺杂物质。掺杂剂物质的第一部分具有第一价态，并且掺杂剂物质的第二部分具有第二价态。在一个实施方案中，掺杂剂物质的第一部分的浓度随着距离介质中心的距离增加而径向减小，并且掺杂剂物质的第二部分的浓度随着距离介质中心的距离增加而径向增加。激光介质还包括在固态主体材料内的杂质，杂质将具有第一价态的掺杂物种的第一部分转化成具有第二价态的掺杂物种的第二部分。

2. 发明授权

US06409503B1 Heat treatment method and heat treatment apparatus 有权
标题翻译：热处理方法和热处理装置
公开(公告)号：US06409503B1
公开(公告)日：2002-06-25
申请号：US09620912
申请日：2000-07-20
申请人： Seiichi Yoshida , Takashi Tanahashi , Akira Onodera , Motoki Akimoto
发明人： Seiichi Yoshida , Takashi Tanahashi , Akira Onodera , Motoki Akimoto
IPC分类号： F27D300
CPC分类号： H01L21/67017 , C23C16/4412 , C23C16/54 , C30B31/18 , Y10S414/139
摘要： When carrying workpieces from a loading area in which the workpieces are handled into a heat treatment furnace to make the workpieces subjected to a heat treatment process using a predetermined process gas, the loading area is evacuated and controlled at a predetermined low negative pressure. An exhaust for evacuating the loading area is connected to the loading area, and a controller controls the exhaust so that the loading area is maintained at the predetermined low negative pressure. A specific gas and particles contained in a gas discharged from the loading area are removed by filters.
摘要翻译：当将工件从其中处理工件的装载区域运送到热处理炉中以使工件使用预定的处理气体进行热处理工艺时，将装载区域抽真空并控制在预定的低负压。用于排出装载区域的排气口连接到装载区域，并且控制器控制排气，使得装载区域保持在预定的低负压。通过过滤器除去从装载区域排出的气体中包含的特定气体和颗粒。

3. 发明授权

US06222164B1 Temperature control system for a thermal reactor 有权
标题翻译：热反应器的温度控制系统
公开(公告)号：US06222164B1
公开(公告)日：2001-04-24
申请号：US09387001
申请日：1999-08-31
申请人： Kevin Stoddard , Paul R. McHugh , Konstantinos Tsakalis
发明人： Kevin Stoddard , Paul R. McHugh , Konstantinos Tsakalis
IPC分类号： H05B102
CPC分类号： H01L21/67248 , C23C16/52 , C30B25/10 , C30B25/16 , C30B31/12 , C30B31/18 , F27B9/024 , F27B9/063 , F27B9/40 , F27D19/00 , F27D21/0014 , H01L21/67109
摘要： A temperature control system for a thermal reactor is disclosed that addresses many of the problems in the art. In accordance with one aspect of the disclosed control system, a plurality of temperature controllers are employed. Each temperature controller employs one or more dynamic models that are optimized for a given temperature range. The temperature range over which a particular controller is optimized is preferably generally exclusive of the temperature ranges over which other controllers of the plurality of temperature controllers are optimized. In accordance with another aspect of the control system the control system employs enhanced ramp trajectory logic. In accordance with another aspect of the control system, the control system employs a virtual temperature sensor in the event of a hardware failure of the corresponding non-virtual temperature sensor. Upon the detection of a failure of the non-virtual temperature sensor, the temperature control system automatically substitutes a virtual temperature sensor in its place as a control system input. In accordance with a still further aspect of the temperature control system, the control system is provided with control logic that switches the control mode of the system in the event of a failure of a heating element. All of the foregoing aspect of the present invention may be combined into a single temperature controller. Alternatively, these temperature control system improvements may be incorporated as individual elements, without reliance on the other inventive aspects disclosed herein.
摘要翻译：公开了一种用于热反应器的温度控制系统，其解决了本领域的许多问题。根据所公开的控制系统的一个方面，采用多个温度控制器。每个温度控制器都使用一个或多个针对给定温度范围进行优化的动态模型。特定控制器优化的温度范围优选地通常不超过多个温度控制器中的其它控制器被优化的温度范围。根据控制系统的另一方面，控制系统采用增强的斜坡轨迹逻辑。根据控制系统的另一方面，在对应的非虚拟温度传感器发生硬件故障的情况下，控制系统采用虚拟温度传感器。在检测到非虚拟温度传感器的故障时，温度控制系统自动地将虚拟温度传感器替代为控制系统输入。根据温度控制系统的另一方面，控制系统设置有控制逻辑，其在加热元件发生故障的情况下切换系统的控制模式。本发明的所有前述方面可以组合成单个温度控制器。或者，这些温度控制系统改进可以作为单独的元件并入，而不依赖于本文公开的其它发明方面。

4. 发明授权

US6072164A Heat-treating method and radiant heating device 失效
标题翻译：热处理方法和辐射加热装置
公开(公告)号：US6072164A
公开(公告)日：2000-06-06
申请号：US142646
申请日：1998-09-11
申请人： Naoto Tate , Tomoyuki Sakai , Naohisa Toda , Hitoshi Habuka
发明人： Naoto Tate , Tomoyuki Sakai , Naohisa Toda , Hitoshi Habuka
IPC分类号： G01K13/00 , C30B29/06 , C30B31/18 , G01J5/00 , G01J5/02 , H01L21/00 , H01L21/205 , H01L21/22 , H01L21/26 , H01L21/265 , H01L21/324 , H01L21/66 , H05B1/02
CPC分类号： H01L21/67248 , C30B31/18 , H01L21/324 , H01L21/67115 , H01L22/26
摘要： There is provided a heat-treating method and a radiant heating device by which an object to be heat-treated can be heat-treated at an actually desired temperature regardless of the dopant concentration or resistivity of the object at the time of heat-treating the object with a radiant heating device using a radiation thermometer as a temperature detector. In the method, the object is heat-treated at an actually desired temperature by correcting the temperature of the object in accordance with the dopant concentration or resistivity of the object. In the apparatus, the dopant concentration or resistivity of the object is inputted in advance to a temperature controller and the controller calculates an actual temperature of the object by correcting and computing the temperature of the object detected with the radiation thermometer in accordance with the dopant concentration or resistivity of the object and controls the temperature of the object based on the calculated temperature value.
摘要翻译： PCT No.PCT / JP97 / 00734 Sec。 371日期：1998年9月11日 102（e）1998年9月11日PCT PCT 1997年3月10日PCT公布。第WO97 / 34318号公报日期1997年9月18日提供了一种热处理方法和辐射加热装置，通过该装置，可以在实际期望的温度下对待热处理的物体进行热处理，而不管当时物体的掺杂剂浓度或电阻率如何使用辐射温度计作为温度检测器的辐射加热装置对物体进行热处理。在该方法中，通过根据物体的掺杂剂浓度或电阻率校正物体的温度，在实际所需温度下对物体进行热处理。在该装置中，物体的掺杂剂浓度或电阻率预先输入到温度控制器，并且控制器通过根据掺杂剂浓度校正和计算用辐射温度计检测的物体的温度来计算物体的实际温度或电阻率，并根据计算出的温度值控制物体的温度。

5. 发明授权

US5767486A Rapid thermal heating apparatus including a plurality of radiant energy sources and a source of processing gas 失效
标题翻译：快速热加热设备包括多个辐射能源和处理气体源
公开(公告)号：US5767486A
公开(公告)日：1998-06-16
申请号：US782839
申请日：1997-01-13
申请人： Christian M. Gronet , James F. Gibbons
发明人： Christian M. Gronet , James F. Gibbons
IPC分类号： C23C16/48 , C30B25/10 , C30B31/12 , C30B31/18 , F27B17/00 , F27D99/00 , G01J5/00 , G01J5/06 , H01L21/00 , H02G3/04 , H05B3/62 , F27B5/14 , F27D11/02
CPC分类号： F27D99/0006 , C23C16/481 , C23C16/482 , C30B25/10 , C30B25/105 , C30B31/12 , C30B31/18 , F27B17/0025 , F27D99/0033 , G01J5/0003 , G01J5/06 , H01L21/67115 , H02G3/0425
摘要： A rapid thermal heating apparatus including an evacuable chamber having a window, a plurality of radiant energy sources and reflectors associated with the radiant energy sources. The radiant energy sources are disposed outside of the chamber and positioned adjacent to the window. They have a central longitudinal axis that extends in a substantially perpendicular direction relative to the window. The reflectors direct radiant energy through the window to radiate predetermined regions of a backside surface of a substrate in the chamber. The reflectors extend along a major portion of the longitudinal axis of the radiant energy sources. The substrate sits on a support in the chamber, and a source of processing gas, including a gas inlet manifold, is provided for passing processing gas to a frontside surface of the substrate.
摘要翻译：一种快速热加热设备，包括具有窗口的可抽空室，多个辐射能源和与辐射能源相关联的反射器。辐射能量源设置在室外并且定位成与窗口相邻。它们具有中心纵向轴线，该中心纵向轴线相对于窗口沿基本上垂直的方向延伸。反射器通过窗口直接辐射能量以辐射腔室中的衬底的背面的预定区域。反射器沿辐射能源的纵向轴线的主要部分延伸。衬底位于室中的支撑件上，并且提供包括气体入口歧管的处理气体源，用于将处理气体传递到衬底的前侧表面。

6. 发明授权

US5708755A Rapid thermal heating apparatus and method 失效
公开(公告)号：US5708755A
公开(公告)日：1998-01-13
申请号：US626893
申请日：1996-04-03
申请人： Christian M. Gronet , James F. Gibbons
发明人： Christian M. Gronet , James F. Gibbons
IPC分类号： C23C16/48 , C30B25/10 , C30B31/12 , C30B31/18 , F27B17/00 , F27D99/00 , G01J5/00 , G01J5/06 , H01L21/00 , H02G3/04 , H05B3/40 , C23C16/00
CPC分类号： F27D99/0006 , C23C16/481 , C23C16/482 , C30B25/10 , C30B25/105 , C30B31/12 , C30B31/18 , F27B17/0025 , F27D99/0033 , G01J5/0003 , G01J5/06 , H01L21/67115 , H02G3/0425
摘要： A rapid thermal heating apparatus in which lamps are disposed in a plurality of light pipes arranged to illuminate and supply heat to a substrate. The light pipes are positioned so that the illumination patterns overlap. The energy supplied to the lamps is controlled to provide a predetermined heating pattern to the substrate. A liquid cooled window cooperates with the light pipes to transmit energy to a wafer disposed in an evacuated chamber.

7. 发明授权

US4925388A Apparatus for heat treating substrates capable of quick cooling 失效
标题翻译：用于热处理能够快速冷却的基板的装置
公开(公告)号：US4925388A
公开(公告)日：1990-05-15
申请号：US411224
申请日：1989-09-22
申请人： Izuru Iseki , Akihiro Higashi , Seihiro Sasaki
发明人： Izuru Iseki , Akihiro Higashi , Seihiro Sasaki
IPC分类号： C23C16/46 , C30B31/12 , C30B31/16 , C30B31/18 , C30B33/00 , F27B5/16 , H01L21/205 , H01L21/22 , H01L21/31
CPC分类号： C30B33/00 , C30B31/12 , C30B31/16 , C30B31/18 , F27B5/16
摘要： An apparatus for heat treating and quickly cooling substrates. The apparatus includes a cylindrical furnace core tube for containing substrates, a heater enclosing the furnace core tube, and outer cylinder enclosing and containing the furnace core tube and the heater, a blower for drafting cooling air to the space between the furnace core tube and the outer cylinder along the longitudinal direction of the furnace core tube, and a switching valve connected between the blower and both ends of the outer cylinder for switching the direction in which the cooling air travels. Since the direction of the cooling air is changed, the entire furnace core tube is uniformly cooled.
摘要翻译：一种热处理和快速冷却基板的设备。该装置包括用于容纳基板的圆柱形炉芯管，包围炉芯管的加热器和封闭并容纳炉芯管和加热器的外筒，用于将冷却空气抽吸到炉芯管和炉芯管之间的空间的鼓风机外筒沿着炉芯管的长度方向，以及连接在鼓风机与外筒的两端之间的切换阀，用于切换冷却空气行进的方向。由于冷却空气的方向改变，整个炉芯管被均匀地冷却。

8. 发明授权

US4370158A Heat-treating method for semiconductor components 失效
标题翻译：半导体元件的热处理方法
公开(公告)号：US4370158A
公开(公告)日：1983-01-25
申请号：US225564
申请日：1981-01-16
申请人： Karl A. Schulke
发明人： Karl A. Schulke
IPC分类号： H01L21/205 , C30B31/10 , C30B31/18 , H01L21/22 , H01L21/324 , C03B32/00
CPC分类号： C30B31/10 , C30B31/18 , H01L21/324
摘要： An improved method for the heat treatment of quartz-glass tubes at temperatures above 1200.degree. C. is disclosed wherein a pressure is maintained within the glass tube which is 3 to 110 mm Hg higher than the pressure on the external surface of the quartz tube over the heated area of the tube for at least the length of time that a temperature of 1200.degree. C. is exceeded. The process is particularly useful for the treatment of quartz-glass tubes within which silicon wafers are disposed for the purpose of diffusing doping agent into silicon wafers or of depositing doped epitaxial layers on silicon wafers.
摘要翻译：公开了一种用于在高于1200℃的温度下对石英玻璃管进行热处理的改进方法，其中在玻璃管内保持比石英管外表面上的压力高3至110mm Hg的压力，管的加热面积至少超过1200℃的时间长度。该方法对于处理其中设置硅晶片以将掺杂剂扩散到硅晶片或在硅晶片上沉积掺杂的外延层的目的的石英玻璃管特别有用。

9. 发明授权

US3377216A Method for indiffusion of foreign material into a monocrystalline semiconductor member 失效
标题翻译：将异物向单晶半导体部件中扩散的方法
公开(公告)号：US3377216A
公开(公告)日：1968-04-09
申请号：US46550465
申请日：1965-06-21
申请人： SIEMENS AG
发明人： KURT RAITHEL
IPC分类号： C09K8/28 , C30B31/10 , C30B31/18 , H01L21/223
CPC分类号： H01L21/223 , C09K8/28 , C30B31/10 , C30B31/18 , Y10S252/951

10. 发明申请

US20070012241A1 Methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses 审中-公开
标题翻译：评价沉积装置内的半导体晶片基板的温度的方法
公开(公告)号：US20070012241A1
公开(公告)日：2007-01-18
申请号：US11525666
申请日：2006-09-22
申请人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Alan Colwell , Eduardo Tovar
发明人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Alan Colwell , Eduardo Tovar
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/67248 , C23C16/481 , C23C16/52 , C30B25/165 , C30B31/18
摘要： The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The invention also includes deposition apparatuses in which flow of mixed gases is controlled by mass flow controllers provided downstream of the location where the gases are mixed and/or where flow of gases is measured with mass flow measurement devices provided downstream of the location where the gases are mixed. Additionally, the invention encompasses deposition apparatuses in which mass flow controllers and/or mass flow measurement devices are provided upstream of a header which splits a source gas into multiple paths directed toward multiple different reaction chambers.
摘要翻译：本发明包括沉积设备，其被配置为通过利用将辐射从衬底传送到检测器/信号处理器系统的管道来监测半导体晶片衬底的温度。在特定方面，可以在衬底在反应室内旋转的同时测量衬底的温度。本发明还包括沉积装置，其中混合气体的流动由设置在气体混合位置下游的质量流量控制器控制，和/或在气体流量测量时，质量流量测量装置设置在气体的位置的下游混合此外，本发明还包括沉积装置，其中质量流量控制器和/或质量流量测量装置设置在将源气体分成多个指向多个不同反应室的路径的集管的上游。

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