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1. 发明申请

US20060231016A1 Deposition apparatuses 审中-公开
标题翻译：沉积装置
公开(公告)号：US20060231016A1
公开(公告)日：2006-10-19
申请号：US11471106
申请日：2006-06-19
申请人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Alan Colwell , Eduardo Tovar
发明人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Alan Colwell , Eduardo Tovar
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/67248 , C23C16/481 , C23C16/52 , C30B25/165 , C30B31/18
摘要： The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The invention also includes deposition apparatuses in which flow of mixed gases is controlled by mass flow controllers provided downstream of the location where the gases are mixed and/or where flow of gases is measured with mass flow measurement devices provided downstream of the location where the gases are mixed. Additionally, the invention encompasses deposition apparatuses in which mass flow controllers and/or mass flow measurement devices are provided upstream of a header which splits a source gas into multiple paths directed toward multiple different reaction chambers.
摘要翻译：本发明包括沉积设备，其被配置为通过利用将辐射从衬底传送到检测器/信号处理器系统的管道来监测半导体晶片衬底的温度。在特定方面，可以在衬底在反应室内旋转的同时测量衬底的温度。本发明还包括沉积装置，其中混合气体的流动由设置在气体混合位置下游的质量流量控制器控制，和/或在气体流量测量时，质量流量测量装置设置在气体的位置的下游混合此外，本发明还包括沉积装置，其中质量流量控制器和/或质量流量测量装置设置在将源气体分成多个指向多个不同反应室的路径的集管的上游。

2. 发明申请

US20050223985A1 Deposition apparatuses, methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses, and methods for deposition of epitaxial semiconductive material 审中-公开
标题翻译：沉积装置，沉积装置内的半导体晶片基板的温度的评估方法以及沉积外延半导体材料的方法
公开(公告)号：US20050223985A1
公开(公告)日：2005-10-13
申请号：US10822208
申请日：2004-04-08
申请人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Alan Colwell , Eduardo Tovar
发明人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Alan Colwell , Eduardo Tovar
IPC分类号： C23C16/00 , C23C16/48 , C23C16/52 , C30B25/16 , C30B31/18 , H01L21/00 , H01L21/66
CPC分类号： H01L21/67248 , C23C16/481 , C23C16/52 , C30B25/165 , C30B31/18
摘要： The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The invention also includes deposition apparatuses in which flow of mixed gases is controlled by mass flow controllers provided downstream of the location where the gases are mixed and/or where flow of gases is measured with mass flow measurement devices provided downstream of the location where the gases are mixed. Additionally, the invention encompasses deposition apparatuses in which mass flow controllers and/or mass flow measurement devices are provided upstream of a header which splits a source gas into multiple paths directed toward multiple different reaction chambers.
摘要翻译：本发明包括沉积设备，其被配置为通过利用将辐射从衬底传送到检测器/信号处理器系统的管道来监测半导体晶片衬底的温度。在特定方面，可以在衬底在反应室内旋转的同时测量衬底的温度。本发明还包括沉积装置，其中混合气体的流动由设置在气体混合位置下游的质量流量控制器控制，和/或在气体流量测量时，质量流量测量装置设置在气体的位置的下游混合此外，本发明还包括沉积装置，其中质量流量控制器和/或质量流量测量装置设置在将源气体分成多个指向多个不同反应室的路径的集管的上游。

3. 发明申请

US20070012241A1 Methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses 审中-公开
标题翻译：评价沉积装置内的半导体晶片基板的温度的方法
公开(公告)号：US20070012241A1
公开(公告)日：2007-01-18
申请号：US11525666
申请日：2006-09-22
申请人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Alan Colwell , Eduardo Tovar
发明人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Alan Colwell , Eduardo Tovar
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/67248 , C23C16/481 , C23C16/52 , C30B25/165 , C30B31/18
摘要： The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The invention also includes deposition apparatuses in which flow of mixed gases is controlled by mass flow controllers provided downstream of the location where the gases are mixed and/or where flow of gases is measured with mass flow measurement devices provided downstream of the location where the gases are mixed. Additionally, the invention encompasses deposition apparatuses in which mass flow controllers and/or mass flow measurement devices are provided upstream of a header which splits a source gas into multiple paths directed toward multiple different reaction chambers.
摘要翻译：本发明包括沉积设备，其被配置为通过利用将辐射从衬底传送到检测器/信号处理器系统的管道来监测半导体晶片衬底的温度。在特定方面，可以在衬底在反应室内旋转的同时测量衬底的温度。本发明还包括沉积装置，其中混合气体的流动由设置在气体混合位置下游的质量流量控制器控制，和/或在气体流量测量时，质量流量测量装置设置在气体的位置的下游混合此外，本发明还包括沉积装置，其中质量流量控制器和/或质量流量测量装置设置在将源气体分成多个指向多个不同反应室的路径的集管的上游。

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