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1. 发明授权

US08968533B2 Electroplating processor with geometric electrolyte flow path 有权
标题翻译：具有几何电解质流动路径的电镀处理器
公开(公告)号：US08968533B2
公开(公告)日：2015-03-03
申请号：US13468273
申请日：2012-05-10
申请人： Randy A. Harris , Daniel J. Woodruff , Jeffrey I. Turner , Gregory J. Wilson , Paul R. McHugh
发明人： Randy A. Harris , Daniel J. Woodruff , Jeffrey I. Turner , Gregory J. Wilson , Paul R. McHugh
IPC分类号： C25D17/12 , C25D17/00 , C25D7/12
CPC分类号： C25D17/12 , C25D7/123 , C25D17/001 , C25D17/002
摘要： An electroplating processor includes an electrode plate having a continuous flow path formed in a channel. The flow path may optionally be a coiled flow path. One or more electrodes are positioned in the channel. A membrane plate is attached to the electrode plate with a membrane in between them. Electrolyte moves through the flow path at a high velocity, preventing bubbles from sticking to the bottom surface of membrane. Any bubbles in the flow path are entrained in the fast moving electrolyte and carried away from the membrane. The electroplating processor may alternatively have a wire electrode extending through a tubular membrane formed into a coil or other shape, optionally including shapes having straight segments.
摘要翻译：电镀处理器包括具有形成在通道中的连续流路的电极板。流路可以可选地是卷绕的流动路径。一个或多个电极定位在通道中。膜板在它们之间附着有电极板。电解液以高速移动通过流路，防止气泡粘到膜底部。流动路径中的任何气泡被夹带在快速移动的电解质中并从膜中带走。电镀处理器可以替代地具有延伸通过形成为线圈或其它形状的管状膜的线电极，任选地包括具有直段的形状。

2. 发明授权

US07927469B2 Electro-chemical processor 有权
标题翻译：电化学处理器
公开(公告)号：US07927469B2
公开(公告)日：2011-04-19
申请号：US11467232
申请日：2006-08-25
申请人： Nigel Stewart , Daniel J. Woodruff , Paul R. McHugh , Gregory J. Wilson , Kyle M. Hanson , Erik Lund , Steven L. Peace
发明人： Nigel Stewart , Daniel J. Woodruff , Paul R. McHugh , Gregory J. Wilson , Kyle M. Hanson , Erik Lund , Steven L. Peace
IPC分类号： C25F7/00
CPC分类号： H01L21/6719 , H01L21/67115 , H01L21/67126
摘要： A processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The second seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The second electrode may move with the second seal. A light source shines light onto the first side of the wafer. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.
摘要翻译：用于制造多孔硅或处理其它衬底的处理器具有第一和第二室组件。第一和第二室组件包括分别用于密封晶片的第一和第二密封件以及第一和第二电极。第二密封件可朝向和远离处理器中的晶片移动，以在晶片装载/卸载位置与晶片工艺位置之间移动。第二电极可以与第二密封件一起移动。光源将光照射到晶片的第一面上。处理器可以从用于加载和卸载晶片的基本上水平的方向枢转到基本垂直的取向，用于处理晶片。

3. 发明授权

US07857958B2 Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces 有权
标题翻译：用于控制容器特性的方法和装置，包括加工微型工件的形状和盗窃电流
公开(公告)号：US07857958B2
公开(公告)日：2010-12-28
申请号：US11776918
申请日：2007-07-12
申请人： Paul R. McHugh , Gregory J. Wilson , Kyle M. Hanson
发明人： Paul R. McHugh , Gregory J. Wilson , Kyle M. Hanson
IPC分类号： C25D5/00 , C25D21/12
CPC分类号： C25D21/12 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/007 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/6723
摘要： A method and apparatus for processing a microfeature workpiece. In one embodiment, the apparatus includes a support member configured to carry a microfeature workpiece at a workpiece plane, and a vessel positioned at least proximate to the support member. The vessel has a vessel surface facing toward the support member and positioned to carry a processing liquid. The vessel surface is shaped to provide an at least approximately uniform current density at the workpiece plane. At least one electrode, such as a thieving electrode, is disposed within the vessel. In a further aspect of this embodiment, the thieving electrode can be easily removable along with conductive material it attracts from the processing liquid. The shape of the vessel surface, the current supplied to the thieving electrode and/or the diameter of an aperture upstream of the workpiece are changed dynamically in other embodiments.
摘要翻译：一种用于处理微特征工件的方法和装置。在一个实施例中，该装置包括构造成在工件平面处承载微特征工件的支撑构件和至少靠近支撑构件定位的容器。容器具有面向支撑构件的容器表面并且定位成承载处理液体。容器表面成形为在工件平面处提供至少近似均匀的电流密度。至少一个电极，例如电极，设置在容器内。在该实施例的另一方面，该窃电电极可以容易地从其从处理液体吸引的导电材料移除。在其他实施例中，容器表面的形状，提供给电极的电流和/或工件上游的孔的直径被动态地改变。

4. 发明申请

US20100116671A1 Apparatus and method for electrochemically depositing metal on a semiconductor workpiece 审中-公开
标题翻译：在半导体工件上电化学沉积金属的装置和方法
公开(公告)号：US20100116671A1
公开(公告)日：2010-05-13
申请号：US11543270
申请日：2006-10-03
申请人： Linlin Chen , Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
发明人： Linlin Chen , Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
IPC分类号： C25D21/12
CPC分类号： H01L21/76868 , C25D3/38 , C25D5/08 , C25D5/10 , C25D5/50 , C25D7/123 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/288 , H01L21/2885 , H01L21/76843 , H01L21/76873 , H01L21/76877 , H01L2221/1089 , Y10S204/07 , Y10T428/12493
摘要： A process for metallization of a workpiece, such as a semiconductor workpiece. In an embodiment, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
摘要翻译：用于对诸如半导体工件的工件进行金属化的方法。在一个实施方案中，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积方法增强已经沉积在阻挡层上的超薄铜籽晶层作为PVD。所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

5. 发明申请

US20100078334A1 ELECTRO-CHEMICAL PROCESSOR 失效
标题翻译：电化学处理器
公开(公告)号：US20100078334A1
公开(公告)日：2010-04-01
申请号：US11457192
申请日：2006-07-13
申请人： Daniel J. Woodruff , Paul R. McHugh , Gregory J. Wilson , Kyle M. Hanson , Erik Lund , Steven L. Peace
发明人： Daniel J. Woodruff , Paul R. McHugh , Gregory J. Wilson , Kyle M. Hanson , Erik Lund , Steven L. Peace
IPC分类号： C25F3/00 , C25F7/00 , C25B9/00 , C25D17/00 , C25C7/00
CPC分类号： C25F7/00
摘要： An electro-chemical processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The first seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The first electrode may move along with the first seal. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.
摘要翻译：用于制造多孔硅或处理其它衬底的电化学处理器具有第一和第二室组件。第一和第二室组件包括分别用于密封晶片的第一和第二密封件以及第一和第二电极。第一密封件可朝向和远离处理器中的晶片移动，以在晶片装载/卸载位置与晶片工艺位置之间移动。第一电极可以与第一密封件一起移动。处理器可以从用于加载和卸载晶片的基本上水平的方向枢转到基本垂直的取向，用于处理晶片。

6. 发明申请

US20080006617A1 THERMAL WAFER PROCESSOR 失效
标题翻译：热处理器
公开(公告)号：US20080006617A1
公开(公告)日：2008-01-10
申请号：US11428742
申请日：2006-07-05
申请人： Randy A. Harris , Gregory J. Wilson , Paul R. McHugh
发明人： Randy A. Harris , Gregory J. Wilson , Paul R. McHugh
IPC分类号： F27B5/14
CPC分类号： F27B17/0025 , H01L21/67109 , H01L21/6719
摘要： A thermal processor may include a cooling jacket positionable around a process chamber within a process vessel or jar. A heater can move into a position substantially between the process chamber vessel and the cooling jacket. A holder having multiple workpiece holding positions is provided for holding a batch or workpieces or wafers. The process chamber vessel is moveable to a position where it substantially encloses the holder, so that wafers in the holder may be processed in a controlled environment. A cooling shroud may be provided to absorb heat from the heater before or after thermal processing. The thermal processor is compact and thermally shielded, and may be used in an automated processing system having other types of processors.
摘要翻译：热处理器可以包括可在处理容器或罐内的处理室周围定位的冷却套。加热器可以进入基本上处理室容器和冷却套之间的位置。提供具有多个工件保持位置的保持器，用于保持批次或工件或晶片。处理室容器可移动到其基本上包围保持器的位置，使得保持器中的晶片可以在受控环境中进行处理。可以提供冷却罩以在热处理之前或之后从加热器吸收热量。热处理器是紧凑的和热屏蔽的，并且可以用于具有其他类型的处理器的自动处理系统中。

7. 发明申请

US20080003781A1 ELECTRO-CHEMICAL PROCESSOR 有权
标题翻译：电化学处理器
公开(公告)号：US20080003781A1
公开(公告)日：2008-01-03
申请号：US11608151
申请日：2006-12-07
申请人： Daniel J. Woodruff , Paul R. McHugh , Gregory J. Wilson , Kyle M. Hanson , Nigel Stewart , Erik Lund , Steven L. Peace
发明人： Daniel J. Woodruff , Paul R. McHugh , Gregory J. Wilson , Kyle M. Hanson , Nigel Stewart , Erik Lund , Steven L. Peace
IPC分类号： H01L21/326
CPC分类号： C25D17/001 , C25D17/004
摘要： A processor for making porous silicon or processing other substrates has first and second chamber assemblies. The first and second chamber assemblies include first and second seals for sealing against a wafer, and first and second electrodes, respectively. The first and/or second seal is moveable towards and away from a wafer in the processor, to move between a wafer load/unload position, and a wafer process position. The first electrode may move along with the first seal, and the second electrode may move along with the second seal. A light source shines light onto the first side of the wafer. The processor may be pivotable from a substantially horizontal orientation, for loading and unloading a wafer, to a substantially vertical orientation, for processing a wafer.
摘要翻译：用于制造多孔硅或处理其它衬底的处理器具有第一和第二室组件。第一和第二室组件包括分别用于密封晶片的第一和第二密封件以及第一和第二电极。第一和/或第二密封件可朝向和远离处理器中的晶片移动，以在晶片装载/卸载位置与晶片工艺位置之间移动。第一电极可以与第一密封件一起移动，并且第二电极可以与第二密封件一起移动。光源将光照射到晶片的第一面上。处理器可以从用于加载和卸载晶片的基本上水平的方向枢转到基本垂直的取向，用于处理晶片。

8. 发明授权

US07247223B2 Method and apparatus for controlling vessel characteristics, including shape and thieving current for processing microfeature workpieces 有权
标题翻译：用于控制容器特性的方法和装置，包括加工微型工件的形状和盗窃电流
公开(公告)号：US07247223B2
公开(公告)日：2007-07-24
申请号：US10426029
申请日：2003-04-28
申请人： Paul R. McHugh , Gregory J. Wilson , Kyle M. Hanson
发明人： Paul R. McHugh , Gregory J. Wilson , Kyle M. Hanson
IPC分类号： C25D17/02 , C25D7/12
CPC分类号： C25D21/12 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/007 , C25D17/02 , C25D17/10 , C25D17/12 , H01L21/6723
摘要： A method and apparatus for processing a microfeature workpiece. In one embodiment, the apparatus includes a support member configured to carry a microfeature workpiece at a workpiece plane, and a vessel positioned at least proximate to the support member. The vessel has a vessel surface facing toward the support member and positioned to carry a processing liquid. The vessel surface is shaped to provide an at least approximately uniform current density at the workpiece plane. At least one electrode, such as a thieving electrode, is disposed within the vessel. In a further aspect of this embodiment, the thieving electrode can be easily removable along with conductive material it attracts from the processing liquid. The shape of the vessel surface, the current supplied to the thieving electrode and/or the diameter of an aperture upstream of the workpiece are changed dynamically in other embodiments.
摘要翻译：一种用于处理微特征工件的方法和装置。在一个实施例中，该装置包括构造成在工件平面处承载微特征工件的支撑构件和至少靠近支撑构件定位的容器。容器具有面向支撑构件的容器表面并且定位成承载处理液体。容器表面成形为在工件平面处提供至少近似均匀的电流密度。至少一个电极，例如电极，设置在容器内。在该实施例的另一方面，该窃电电极可以容易地从其从处理液体吸引的导电材料移除。在其他实施例中，容器表面的形状，提供给电极的电流和/或工件上游的孔的直径被动态地改变。

9. 发明授权

US07161689B2 Apparatus and method for processing a microelectronic workpiece using metrology 有权
标题翻译：使用计量处理微电子工件的装置和方法
公开(公告)号：US07161689B2
公开(公告)日：2007-01-09
申请号：US10685306
申请日：2003-10-14
申请人： Thomas L. Ritzdorf , Steve L. Eudy , Gregory J. Wilson , Paul R. McHugh
发明人： Thomas L. Ritzdorf , Steve L. Eudy , Gregory J. Wilson , Paul R. McHugh
IPC分类号： G01B11/28 , H01L21/00 , H01L21/66 , G01R31/26 , C25D5/00 , C25D21/12
CPC分类号： H01L21/67173 , H01L21/67103 , H01L21/67207 , H01L21/67219 , H01L21/67253 , H01L21/67276
摘要： A processing apparatus for processing a microelectronic workpiece includes a metrology unit and a control, signal-connected to the metrology unit. The control can modify a process recipe or a process sequence of the processing apparatus based on a feed forward or a feed back signal from the metrology unit. A seed layer deposition tool, a process layer electrochemical deposition tool, and a chemical mechanical polishing tool, arranged for sequential processing of a workpiece, can be controlled as an integrated system using one or more metrology units. A metrology unit can be located at each tool to measure workpiece parameters. Each of the metrology units can be used as a feed forward control and/or a feed back control at each of the tools.
摘要翻译：用于处理微电子工件的处理装置包括测量单元和与计量单元信号连接的控制。该控制可以基于来自计量单元的前馈或反馈信号来修改处理设备的处理配方或处理顺序。布置用于对工件进行连续加工的种子层沉积工具，工艺层电化学沉积工具和化学机械抛光工具可被控制为使用一个或多个计量单元的集成系统。每个工具都可以设置一个测量单元来测量工件参数。每个计量单元可用作每个工具的前馈控制和/或反馈控制。

10. 发明授权

US07160421B2 Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece 有权
标题翻译：用于电化学处理微电子工件的反应器中的调谐电极
公开(公告)号：US07160421B2
公开(公告)日：2007-01-09
申请号：US09866463
申请日：2001-05-24
申请人： Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
发明人： Gregory J. Wilson , Paul R. McHugh , Robert A. Weaver , Thomas L. Ritzdorf
IPC分类号： C25D17/00 , C25D17/12 , C25D7/12 , C25D5/16
CPC分类号： C25D5/08 , C25D7/123 , C25D17/001 , C25D17/12 , C25D21/12 , Y10S204/07
摘要： A facility for selecting and refining electrical parameters for processing a microelectronic workpiece in a processing chamber is described. The facility initially configures the electrical parameters in accordance with either a mathematical model of the processing chamber or experimental data derived from operating the actual processing chamber. After a workpiece is processed with the initial parameter configuration, the results are measured and a sensitivity matrix based upon the mathematical model of the processing chamber is used to select new parameters that correct for any deficiencies measured in the processing of the first workpiece. These parameters are then used in processing a second workpiece, which may be similarly measured, and the results used to further refine the parameters.
摘要翻译：描述了一种用于选择和精炼用于在处理室中处理微电子工件的电参数的设备。该设备最初根据处理室的数学模型或从操作实际处理室得到的实验数据来初始配置电参数。在用初始参数配置处理工件之后，测量结果，并且使用基于处理室的数学模型的灵敏度矩阵来选择校正在第一工件的处理中测量的任何缺陷的新参数。然后将这些参数用于处理可以类似地测量的第二工件，并且用于进一步改进参数的结果。

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