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1. 发明申请

US20140033968A1 Controlled Doping Device For Single Crystal Semiconductor Material and Related Methods 审中-公开
标题翻译：单晶半导体材料的控制掺杂装置及相关方法
公开(公告)号：US20140033968A1
公开(公告)日：2014-02-06
申请号：US13562445
申请日：2012-07-31
申请人： Armando Giannattasio , Stephan Haringer , Roberto Scala , Valentino Moser
发明人： Armando Giannattasio , Stephan Haringer , Roberto Scala , Valentino Moser
IPC分类号： C30B15/04 , B21D51/16
CPC分类号： C30B31/10 , C30B15/04 , C30B35/007 , Y10T29/494 , Y10T117/1032
摘要： A doping device for a furnace containing a melt includes an upper chamber configured to hold solid dopant particles, a lower chamber, and a feeding tube coupled between the upper chamber and the lower chamber. The feeding tube is configured to supply dopant gas from the upper chamber to the lower chamber, and the lower chamber is configured to diffuse dopant gas over a top surface of the melt.
摘要翻译：含有熔体的炉子的掺杂装置包括被配置为保持固体掺杂剂颗粒的上室，下室和连接在上室和下室之间的进料管。供料管被配置成将掺杂气体从上室供应到下室，而下室被配置成将掺杂气体扩散到熔体顶表面上。

2. 发明申请

US20050109275A1 Reactor chamber 有权
标题翻译：反应室
公开(公告)号：US20050109275A1
公开(公告)日：2005-05-26
申请号：US10719416
申请日：2003-11-21
申请人： Eric Wood
发明人： Eric Wood
IPC分类号： C23C16/44 , C23C16/48 , C30B31/10 , C23C16/00
CPC分类号： C23C16/44 , C23C16/481 , C30B31/10
摘要： A semiconductor processing chamber having an upper wall, a lower wall, and two side walls. The upper and lower walls each comprise two thin, flat plates that are slightly out of parallel so that the wall has a pitch. The pitches point away from the interior chamber space to enable the chamber to withstand reduced pressures.
摘要翻译：具有上壁，下壁和两个侧壁的半导体处理室。上壁和下壁各自包括两个薄的平板，其略微不平行，使得壁具有间距。间距指向内部腔室空间，以使腔室承受减小的压力。

3. 发明申请

US20030221623A1 Fabricating a semiconductor device 审中-公开
标题翻译：制造半导体器件
公开(公告)号：US20030221623A1
公开(公告)日：2003-12-04
申请号：US10452250
申请日：2003-06-03
申请人： Hitachi Kokusai Electric Inc.
发明人： Nobuhito Shima , Tomoshi Taniyama , Shigeru Odake , Tomoharu Shimada
IPC分类号： C23C016/00
CPC分类号： C30B31/10 , C23C16/44
摘要： An apparatus for fabricating a semiconductor device includes a reaction or process tube provided with at least one reinforcement member. The reinforcement member is attached to a body portion of the reaction tube and extends in a longitudinal direction of the reaction tube. A heater surrounds the reaction tube and a substrate loaded in the reaction tube is heat-treated by the heater.
摘要翻译：一种用于制造半导体器件的设备包括设置有至少一个加强构件的反应或处理管。加强构件附接到反应管的主体部分并沿着反应管的纵向方向延伸。加热器围绕反应管，并且装载在反应管中的基板由加热器进行热处理。

4. 发明授权

US06538237B1 Apparatus for holding a quartz furnace 有权
标题翻译：用于保持石英炉的装置
公开(公告)号：US06538237B1
公开(公告)日：2003-03-25
申请号：US10043057
申请日：2002-01-08
申请人： Ming-Hsun Yang , Chen-Mei Fan , Allan Wang , June-Yie Kao
发明人： Ming-Hsun Yang , Chen-Mei Fan , Allan Wang , June-Yie Kao
IPC分类号： F27B508
CPC分类号： H01L21/67098 , C30B25/08 , C30B31/10 , H01L21/68728
摘要： An apparatus for fixing the position of a quartz furnace tube in a semiconductor processing furnace is described. The furnace is of the type that has a cylindrical body possessing an open end through which the tube may be withdrawn, and a base postioned on the open end, wherein the tube includes a flange portion secured to the base through which gas may be withdrawn from or introduced into the furnace tube. The tube is coaxially disposed within the furnace body. The apparatus may include two clamp halves each has a half-circular shape for engaging the flange portion of the furnace tube onto the base, and a mounting means for mounting the two clamp halves to the base.
摘要翻译：描述了一种将石英炉管的位置固定在半导体加工炉中的装置。该炉具有一个具有开口端的圆柱形主体，管可以被抽出，并且一个基座位于开口端，其中该管包括固定到底部的凸缘部分，气体可通过该凸缘部分被从或引入炉管。管同轴地设置在炉体内。该装置可以包括两个夹具半部，每个具有用于将炉管的凸缘部分接合到基座上的半圆形形状，以及用于将两个夹具半部安装到基座的安装装置。

5. 发明申请

US20030000458A1 Quartz member for semiconductor manufacturing equipment and method for metal analysis in quartz member 审中-公开
标题翻译：石英构件用于半导体制造设备和金属分析方法的石英构件
公开(公告)号：US20030000458A1
公开(公告)日：2003-01-02
申请号：US10181980
申请日：2002-07-24
发明人： Yoshinori Marumo , Kaname Suzuki , Teruyuki Hayashi , Takashi Tanahashi
IPC分类号： C30B001/00
CPC分类号： C30B35/00 , C30B31/10 , G01N1/32 , G01N1/4044 , Y10T117/10
摘要： Quartz member such as a quartz tube for semiconductor manufacturing equipment capable of heat treating a substrate to be treated without causing contamination, a manufacturing method of such quartz member, thermal treatment equipment furnished with such quartz member, and an analysis method of metal in quartz member are provided. A quartz specimen is immersed in hydrofluoric acid to expose a layer to be analyzed located at a prescribed depth. On an exposed surface, a decomposition liquid such as hydrofluoric acid or nitric acid is dripped to decompose only an extremely thin layer to be analyzed, followed by recovering of the decomposition liquid. The decomposition liquid is quantitatively analyzed by use of atomic absorption spectroscopy (AAS) or the like to measure an amount of metal contained in the decomposition liquid. From a difference of thicknesses before and after the decomposition and an area of dripped decomposition liquid, a volume of a decomposed layer to be analyzed is obtained. From this and the amount of metal contained in the decomposition liquid, a concentration of metal contained in the layer to be analyzed, in addition a diffusion coefficient of a layer to be analyzed is calculated. With thus obtained diffusion coefficient as an index, quartz material in which metal diffuses with difficulty is sorted out. With thus sorted quartz material, a quartz member used for semiconductor manufacturing equipment such as a quartz tube is manufactured.
摘要翻译：石英部件，例如能够对被处理基板进行热处理而不引起污染的半导体制造设备的石英管，这种石英部件的制造方法，配备有这种石英部件的热处理设备以及石英部件中的金属分析方法被提供。将石英样品浸入氢氟酸中以暴露位于规定深度的被分析层。在暴露的表面上，滴加氢氟酸或硝酸等分解液，仅分解极薄的待分析层，然后回收分解液。通过使用原子吸收光谱法（AAS）等对分解液进行定量分析，以测量分解液中所含的金属的量。根据分解前后的厚度差和滴落分解液的面积，得到待分析体积的分解层。由此和分解液中所含的金属的量，计算待分析层中所含的金属的浓度，另外计算待分析层的扩散系数。以这样获得的扩散系数作为指标，分析难以扩散金属的石英材料。通过这样排列的石英材料，制造了用于诸如石英管的半导体制造设备的石英部件。

6. 发明授权

US5601428A Vertical heat-treating apparatus and heat insulator 失效
标题翻译：立式热处理装置和隔热材料
公开(公告)号：US5601428A
公开(公告)日：1997-02-11
申请号：US540136
申请日：1995-10-06
申请人： Shinichi Okoshi , Hiroyuki Kimura
发明人： Shinichi Okoshi , Hiroyuki Kimura
IPC分类号： C30B31/10 , C30B31/12 , C30B33/00 , F27B17/00 , F27D7/02 , F27D3/12
CPC分类号： C30B33/00 , C30B31/10 , F27B17/0025 , F27D7/02
摘要： It is an object of the present invention to provide a vertical heat treatment apparatus having a heat insulator, which has sufficient heat insulation, heat retention and high load pressure bearing properties to cope with increased size dimensions and number of layers of wafer workpieces and can be particularly advantageously used as a semiconductor and TFT substrate heat treatment apparatus. The apparatus features the use of a heat insulator casing 40 supporting a substrate holder 3 on its top and receiving a heat insulator 50 having numerous inner microspaces in its lower space, and defining a substrate holder or boat insulator receiving space A and a heat insulator receiving space B such that these spaces are hermetically sealed with respect to each other by the heat insulator casing. It is also a feature of the apparatus that the heat insulator receiving space B is in communication with the exterior or that the pressure in the heat insulator receiving space B can be reduced or increased through a contact section of a closure member 70 which supports the heat insulator casing 40 or a heat insulator casing flange 41.
摘要翻译：本发明的目的是提供一种具有绝热体的立式热处理装置，其具有足够的隔热性，保温性和高负载压力承载性能，以应对尺寸增加的尺寸和晶片工件的层数，并且可以特别有利地用作半导体和TFT基板热处理装置。该装置的特征在于使用在其顶部上支撑衬底保持器3的绝热器壳体40，并且在其下部空间中容纳具有多个内部微型体的隔热件50，并且限定衬底保持器或舟形绝缘体容纳空间A和隔热件接收空间B，使得这些空间通过绝热壳体相对于彼此气密密封。绝热体接收空间B与外部连通的装置的特征还在于，能够通过支撑热量的封闭构件70的接触部来减小或增加绝热体容纳空间B中的压力绝缘体套管40或绝热体套管凸缘41。

7. 发明授权

US5483041A Thermocouple for a horizontal diffusion furnace 失效
标题翻译：用于水平扩散炉的热电偶
公开(公告)号：US5483041A
公开(公告)日：1996-01-09
申请号：US230706
申请日：1994-04-21
申请人： Kevin B. Peck , Ronald E. Erickson
发明人： Kevin B. Peck , Ronald E. Erickson
IPC分类号： F27D1/00 , C30B31/10 , F27B5/04 , F27B5/14 , F27D7/06 , F27D21/00 , H01L21/00 , H01L21/22 , H01L21/31
CPC分类号： H01L21/67115 , C30B31/10
摘要： Performance of a high temperature diffusion furnace is enhanced by an improved multi-furnace module design. The furnace is constructed of materials suitable for clean room environments with an adjustable leveling frame assembly. A slide out assembly and heating element alignment mechanism of individual furnace tube modules with a heating element hoist mechanism allows for enhanced maintainability. Heat treatment performance is improved by a sealed heating element with individual furnace module cooling system. Improved thermocouple positioning and composition has also enhanced heat treatment process control and heating element maintainability.
摘要翻译：通过改进的多炉模块设计，提高了高温扩散炉的性能。该炉由适用于洁净室环境的材料构成，具有可调节的调平架组件。具有加热元件起重机构的单独炉管模块的滑出组件和加热元件对准机构允许增强的可维护性。通过具有单独的炉模块冷却系统的密封加热元件来改善热处理性能。改进的热电偶定位和组成也增强了热处理过程控制和加热元件的可维护性。

8. 发明授权

US5395452A Apparatus made of silica for semiconductor device fabrication 失效
标题翻译：由二氧化硅制成的用于半导体器件制造的器件
公开(公告)号：US5395452A
公开(公告)日：1995-03-07
申请号：US77645
申请日：1993-06-17
申请人： Masanori Kobayashi , Ken Yamazaki , Tsutomu Ogawa , Yoshiko Okui
发明人： Masanori Kobayashi , Ken Yamazaki , Tsutomu Ogawa , Yoshiko Okui
IPC分类号： C03C3/06 , C23C16/44 , C30B25/08 , C30B31/10 , H01L21/00 , H01L21/22 , H01L21/673 , C23C16/00
CPC分类号： H01L21/67115 , C23C16/4404 , C30B25/08 , C30B31/10 , H01L21/67313
摘要： In a apparatus made of silica such as a heating furnace, a wafer basket, stick or the like used for semiconductor device fabrication, a first silica layer on the side faced to a semiconductor wafer contains a large amount of the OH group, and a second silica layer on the opposed side contains a small amount of the OH group. With this structure, it is possible to reduce the amount of impurities released through the first silica layer, and to suppress the deformation of the apparatus by the second silica layer. Also, by holding a third silica layer between the first and second silica layers, it is possible to further reduce the amount of impurities released from the first silica layer.
摘要翻译：在用于半导体器件制造的加热炉，晶圆筐，棒等二氧化硅的装置中，与半导体晶片相对的一侧的第一二氧化硅层含有大量的OH基，第二相对侧的二氧化硅层含有少量的OH基。通过这种结构，可以减少通过第一二氧化硅层释放的杂质的量，并且抑制第二二氧化硅层的装置的变形。此外，通过在第一和第二二氧化硅层之间保持第三二氧化硅层，可以进一步减少从第一二氧化硅层释放的杂质的量。

9. 发明授权

US4761134B1 SILICON CARBIDE DIFFUSION FURNACE COMPONENTS WITH AN IMPERVIOUS COATING THEREON 失效
标题翻译：碳化硅扩散炉组件与其不同的涂层
公开(公告)号：US4761134B1
公开(公告)日：1993-11-16
申请号：US3150087
申请日：1987-03-30
IPC分类号： C04B35/573 , C04B35/565 , C04B41/87 , C30B31/10 , C30B31/14 , H01L21/22 , F27D5/00
CPC分类号： C30B31/14 , C30B31/10

10. 发明授权

US5179049A Heat treating apparatuses for semiconductors and high purity silicon carbide parts for the apparatuses and a method of making thereof 失效
标题翻译：用于设备的半导体和高纯度碳化硅部件的热处理装置及其制造方法
公开(公告)号：US5179049A
公开(公告)日：1993-01-12
申请号：US794945
申请日：1991-11-20
申请人： Hideji Numata , Takuro Ono , Nobuo Kageyama , Koji Furukawa , Ryuhei Makimura
发明人： Hideji Numata , Takuro Ono , Nobuo Kageyama , Koji Furukawa , Ryuhei Makimura
IPC分类号： C04B35/573 , C30B31/10 , C30B31/14
CPC分类号： C30B31/10 , C04B35/573 , C30B31/14
摘要： High purity silicon carbide parts for a heat treating apparatuses for semiconductors; composed mainly of .alpha.-type silicon carbide and silicon; characterized in that a particle sizes of the .alpha.-type silicon carbide crystals composing the high purity silicon carbide parts are not larger than 44 .mu.m; a weight mean particle size of the .alpha.-type silicon carbide crystals is in a range from 2 to 25 .mu.m; high purity silicon is filled up among the particles of the .alpha.-type silicon carbide crystals; and a content of iron as an impurity element contained in the high purity silicon carbide parts is not larger than 5 ppm.

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