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1. 发明申请

US20160052791A1 Method for Producing Trichlorosilane 审中-公开
标题翻译：生产三氯硅烷的方法
公开(公告)号：US20160052791A1
公开(公告)日：2016-02-25
申请号：US14929873
申请日：2015-11-02
申请人： MITSUBISHI MATERIALS CORPORATION
发明人： Toshiyuki Ishii , Hideo Ito , Yuji Shimizu
IPC分类号： C01B33/107
CPC分类号： C01B33/1071 , B01J12/007 , B01J19/02 , B01J19/243 , B01J2219/00135 , B01J2219/00155 , B01J2219/0272
摘要： An apparatus for producing trichlorosilane, including: a reaction vessel in which a supply gas containing silicon tetrachloride and hydrogen is supplied to produce a reaction product gas containing trichlorosilane and hydrogen chloride; a heating mechanism that heats the interior of the reaction vessel; a gas supply section that supplies the supply gas in the reaction vessel; and a gas discharge section that discharges the reaction product gas from the reaction vessel to the outside, wherein a reaction passageway is formed in the interior of the reaction vessel, in which a plurality of small spaces partitioned by a plurality of reaction tubular walls that have different inner diameters and are substantially concentrically disposed communicate by flow penetration sections formed alternately in lower portions and upper portions of the reaction tubular walls in order from the inside, and the gas supply section and the gas discharge section are connected to the reaction passageway.
摘要翻译：一种三氯硅烷的制造装置，包括：供给含有四氯化硅和氢气的供给气体的反应容器，生成含有三氯硅烷和氯化氢的反应生成气体; 加热反应容器内部的加热机构; 气体供给部，其供给反应容器内的供给气体; 以及气体排出部，其将反应产物气体从反应容器排出到外部，其中反应通道形成在反应容器的内部，其中多个由多个反应管壁分隔的小空间，其具有不同的内径并且基本上同心设置，由内部依次形成在反应管壁的下部和上部交替形成的流动穿透部分，气体供应部分和气体排出部分连接到反应通道。

2. 发明授权

US08673035B2 Solar-thermal reaction processing 失效
标题翻译：太阳热反应加工
公开(公告)号：US08673035B2
公开(公告)日：2014-03-18
申请号：US13088185
申请日：2011-04-15
申请人： Alan W Weimer , Jaimee K Dahl , Allan A Lewandowski , Carl Bingham , Karen J Raska Buechler , Willy Grothe
发明人： Alan W Weimer , Jaimee K Dahl , Allan A Lewandowski , Carl Bingham , Karen J Raska Buechler , Willy Grothe
IPC分类号： B01J7/00 , C10J3/00 , C01B3/24
CPC分类号： B01J8/0045 , B01J8/025 , B01J8/087 , B01J10/002 , B01J19/127 , B01J2208/00212 , B01J2208/0038 , B01J2208/00451 , B01J2208/00513 , B01J2208/00522 , B01J2208/00752 , B01J2219/00006 , B01J2219/0272 , B01J2219/0883 , C01B3/04 , C01B3/24 , C01B3/34 , C01B3/344 , C01B17/0495 , C01B2203/0216 , C01B2203/0222 , C01B2203/0272 , C01B2203/04 , C01B2203/049 , C01B2203/0805 , C01B2203/0833 , C01B2203/085 , C01B2203/0866 , C01P2006/80 , C09C1/48 , F24S20/20 , F28C3/12 , Y02E10/41 , Y02E60/364 , Y02P20/134
摘要： In an embodiment, a method of conducting a high temperature chemical reaction that produces hydrogen or synthesis gas is described. The high temperature chemical reaction is conducted in a reactor having at least two reactor shells, including an inner shell and an outer shell. Heat absorbing particles are included in a gas stream flowing in the inner shell. The reactor is heated at least in part by a source of concentrated sunlight. The inner shell is heated by the concentrated sunlight. The inner shell re-radiates from the inner wall and heats the heat absorbing particles in the gas stream flowing through the inner shell, and heat transfers from the heat absorbing particles to the first gas stream, thereby heating the reactants in the gas stream to a sufficiently high temperature so that the first gas stream undergoes the desired reaction(s), thereby producing hydrogen or synthesis gas in the gas stream.
摘要翻译：在一个实施方案中，描述了进行产生氢气或合成气体的高温化学反应的方法。高温化学反应在具有至少两个反应器壳的反应器中进行，所述反应器壳包括内壳和外壳。在内壳中流动的气流中包含吸热颗粒。反应器至少部分由浓度太阳光源加热。内壳由集中的阳光加热。内壳从内壁再辐射并加热流过内壳的气流中的吸热颗粒，并将热量从吸热颗粒转移到第一气流，从而将气流中的反应物加热至足够高的温度使得第一气流经历所需的反应，从而在气流中产生氢气或合成气。

3. 发明授权

US07727483B2 Reactor for chlorosilane compound 失效
标题翻译：氯硅烷化合物反应器
公开(公告)号：US07727483B2
公开(公告)日：2010-06-01
申请号：US11660414
申请日：2005-08-17
申请人： Manabu Sakida , Satoru Wakamatsu
发明人： Manabu Sakida , Satoru Wakamatsu
IPC分类号： B01J12/00 , B01J19/00 , C23C16/00
CPC分类号： C01B33/03 , B01J19/02 , B01J19/24 , B01J2219/00148 , B01J2219/0272 , C01B33/027 , C30B29/06
摘要： In a reaction apparatus of the chlorosilanes for heating a reaction portion that is a section from the bottom end portion to a specified height in the carbon reaction vessel and that has an inside face to which silicon has deposited, and for reacting the chlorosilanes by making the chlorosilanes and hydrogen to come into contact with the inside face of the reaction portion, a gas penetration preventing processing for preventing the chlorosilanes supplied to the reaction vessel from penetrating a pipe wall of the non reaction portion in the reaction vessel is carried out to the inside face and/or the outside face of the non reaction portion on the side upper than the reaction portion in the reaction vessel.
摘要翻译：在用于加热反应部分的反应装置中，该反应部分是在碳反应容器中从底端部分到特定高度的部分，并且具有硅沉积的内表面，并使氯硅烷通过使氯硅烷和氢气与反应部分的内表面接触，防止供给反应容器的氯硅烷渗入反应容器内的非反应部分的管壁的气体渗透防止处理进行到内部面和/或非反应部分的外表面在反应容器中的反应部分上方。

4. 发明申请

US20070034146A1 Silicon manufacturing apparatus 有权
标题翻译：硅制造装置
公开(公告)号：US20070034146A1
公开(公告)日：2007-02-15
申请号：US10569149
申请日：2004-08-17
申请人： Junichirou Nakashima , Oda Hiroyuki
发明人： Junichirou Nakashima , Oda Hiroyuki
IPC分类号： C30B11/00 , C23C16/00
CPC分类号： C01B33/027 , B01J19/02 , B01J2219/0218 , B01J2219/0227 , B01J2219/0272 , C01B33/029 , C01B33/03 , C30B11/003 , C30B29/06 , Y10T117/10 , Y10T117/1004
摘要： A polycrystalline silicon production apparatus is provided whereby when deposited silicon is caused to drip down into an underlying collection part by heating the reaction tube inner surface at a temperature equal to or above the melting point of silicon, the silicon melt can be prevented from solidifying at a lower end portion of the reaction tube due to temperature lowering at the lower end portion. When a reaction tube is heated with a high frequency heating coil, the temperature lowering at a lower end portion of the reaction tube is prevented through temperature lowering prevention means which may be an infrared device capable of heating the outer periphery of the lower end portion by means of infrared rays, or which may be a lower end coil that is constituted by a coil near the lower end of the high frequency heating coil and has an increased heating intensity relative to an upper coil.
摘要翻译：提供一种多晶硅制造装置，通过在硅的熔点以上的温度下加热反应管内表面，使沉积的硅滴入下面的收集部分时，可以防止硅熔体固化由于下端部的温度降低，反应管的下端部。当用高频加热线圈加热反应管时，通过防止降温装置防止反应管的下端部的温度降低，该装置可以是可以通过下述方式加热下端部的外周的红外线装置红外线的手段，也可以是由高频加热线圈的下端附近的线圈构成的下端线圈，并且相对于上线圈具有增加的加热强度。

5. 发明授权

US06849244B2 Method for producing highly-pure granular silicon 失效
标题翻译：生产高纯度粒状硅的方法
公开(公告)号：US06849244B2
公开(公告)日：2005-02-01
申请号：US10432154
申请日：2001-11-03
申请人： Theo König , Matthias Pfaffelhuber , Heiko Herold , Günter Holdenried , Leslaw Mleczko
发明人： Theo König , Matthias Pfaffelhuber , Heiko Herold , Günter Holdenried , Leslaw Mleczko
IPC分类号： B01J19/02 , C01B33/027 , C01B33/029 , C01B33/03 , C01B33/02
CPC分类号： B01J19/02 , B01J2219/00155 , B01J2219/0272 , B01J2219/029 , C01B33/027 , C01B33/029 , C01B33/03
摘要： The invention relates to a method for producing hyper-pure, granular silicon by decomposing a gas containing silicon in a reactor consisting of a silicon carbide-based, carbon-fiber reinforced material; to a corresponding reactor; and to the use of said reactor for producing silicon.
摘要翻译：本发明涉及一种通过在由碳化硅类碳纤维增强材料构成的反应器中分解含硅气体来生产高纯度粒状硅的方法; 到相应的反应器; 以及所述反应器用于生产硅的用途。

6. 发明授权

US5045398A Silicon carbide product 失效
标题翻译：碳化硅产品
公开(公告)号：US5045398A
公开(公告)日：1991-09-03
申请号：US462260
申请日：1990-01-09
申请人： Harry Levin
发明人： Harry Levin
IPC分类号： B01J19/02 , C01B33/029 , C01B33/03
CPC分类号： C01B33/03 , B01J19/02 , C01B33/029 , B01J2219/0204 , B01J2219/0209 , B01J2219/0272 , Y10T428/30
摘要： A silicon carbide product by converting carbon preforms by utilizing a reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.
摘要翻译：公开了通过利用适于通过合适的前体气体例如硅烷（SiH 4）的热反应连续生产熔融的太阳能级纯度元素硅的反应器装置（10）来转换碳预制件的碳化硅产品。反应器装置（10）包括具有石墨或碳壁的细长反应器主体（32），其被加热到超过硅的熔融温度的温度。前体气体通过有效冷却的入口管组件（22）和相对薄的碳或石墨隔膜（44）进入反应器主体（32）。在一侧与冷却的入口（22）接触的隔膜（44）和另一侧的反应器（32）的加热内部，为进入反应器（32）的前体气体提供了急剧的温度梯度，以及使得入口管组件（22）的操作基本上没有堵塞。前体气体以基本平滑，基本上轴向的方式在反应器（32）中流动。在热反应的初始阶段形成的液态硅与石墨或碳壁反应，在壁上提供碳化硅涂层。碳化硅涂层反应器高度适用于长时间用于生产高纯度太阳能级硅。在反应器装置（10）中生产的液态硅（20）可以直接用于切克劳斯（Czochralski）或其它晶体成形设备。

7. 发明授权

US4737348A Apparatus for making molten silicon 失效
标题翻译：用于制造熔融硅的设备
公开(公告)号：US4737348A
公开(公告)日：1988-04-12
申请号：US618712
申请日：1984-06-08
申请人： Harry Levin
发明人： Harry Levin
IPC分类号： B01J19/02 , C01B33/029 , C01B33/03 , C01B33/02
CPC分类号： C01B33/03 , B01J19/02 , C01B33/029 , B01J2219/0204 , B01J2219/0209 , B01J2219/0272 , Y10S117/90 , Y10T117/1056
摘要： A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.
摘要翻译：公开了一种用于通过合适的前体气体如硅烷（SiH 4）的热反应连续生产熔融的太阳能级纯度元素硅的反应器装置（10）。反应器装置（10）包括具有石墨或碳壁的细长反应器主体（32），其被加热到超过硅的熔融温度的温度。前体气体通过有效冷却的入口管组件（22）和相对薄的碳或石墨隔膜（44）进入反应器主体（32）。在一侧与冷却的入口（22）接触的隔膜（44）和另一侧的反应器（32）的加热内部，为进入反应器（32）的前体气体提供了急剧的温度梯度，以及使得入口管组件（22）的操作基本上没有堵塞。前体气体以基本平滑，基本上轴向的方式在反应器（32）中流动。在热反应的初始阶段形成的液态硅与石墨或碳壁反应，在壁上提供碳化硅涂层。碳化硅涂层反应器高度适用于长时间用于生产高纯度太阳能级硅。在反应器装置（10）中生产的液态硅（20）可以直接用于切克劳斯（Czochralski）或其它晶体成形设备。

8. 发明授权

US4354987A Consolidation of high purity silicon powder 失效
标题翻译：合并高纯硅粉
公开(公告)号：US4354987A
公开(公告)日：1982-10-19
申请号：US249443
申请日：1981-03-31
申请人： Sridhar K. Iya
发明人： Sridhar K. Iya
IPC分类号： B01J2/04 , C01B33/02 , C01B33/029
CPC分类号： B01J19/02 , B01J19/0013 , B01J19/24 , B01J2/04 , C01B33/02 , C01B33/029 , B01J2219/00083 , B01J2219/00148 , B01J2219/00159 , B01J2219/00166 , B01J2219/0272
摘要： Consolidation of very fine silicon powder into shotted form using heated crucible.
摘要翻译：使用加热坩埚将非常细的硅粉整合成成型。

9. 发明授权

US2906632A Oxidation resistant articles 失效
标题翻译：耐氧化物品
公开(公告)号：US2906632A
公开(公告)日：1959-09-29
申请号：US68311157
申请日：1957-09-10
申请人： UNION CARBIDE CORP
发明人： NICKERSON JOHN D
IPC分类号： B01J19/02 , C04B33/13 , C04B41/50 , C04B41/85
CPC分类号： C04B35/522 , B01J19/02 , B01J2219/0272 , C04B33/13 , C04B33/1315 , C04B41/009 , C04B41/5092 , C04B41/85 , C04B41/4535 , C04B41/455 , C04B41/5006 , C04B35/52

10. 发明授权

US08017024B2 Method for continual preparation of polycrystalline silicon using a fluidized bed reactor 有权
标题翻译：使用流化床反应器连续制备多晶硅的方法
公开(公告)号：US08017024B2
公开(公告)日：2011-09-13
申请号：US12281041
申请日：2007-06-14
申请人： Hee Young Kim , Kyung Koo Yoon , Yong Ki Park , Won Choon Choi
发明人： Hee Young Kim , Kyung Koo Yoon , Yong Ki Park , Won Choon Choi
IPC分类号： B44C1/22
CPC分类号： C30B29/06 , B01J8/1809 , B01J8/1827 , B01J8/1836 , B01J8/24 , B01J8/34 , B01J19/02 , B01J2208/00398 , B01J2208/00407 , B01J2208/00415 , B01J2208/00495 , B01J2208/00539 , B01J2208/0084 , B01J2208/00991 , B01J2219/0209 , B01J2219/0218 , B01J2219/0236 , B01J2219/0254 , B01J2219/0272 , B01J2219/029 , C01B33/027 , C30B28/14
摘要： There is provided a method for continual preparation of granular polycrystalline silicon using a fluidized bed reactor, enabling a stable, long-term operation of the reactor by effective removal of silicon deposit accumulated on the inner wall of the reactor tube. The method comprises (i) a silicon particle preparation step, wherein silicon deposition occurs on the surface of the silicon particles, while silicon deposit is accumulated on the inner wall of the reactor tube encompassing the reaction zone; (ii) a silicon particle partial discharging step, wherein a part of the silicon particles remaining inside the reactor tube is discharged out of the fluidized bed reactor so that the height of the bed of the silicon particles does not exceed the height of the reaction gas outlet; and (iii) a silicon deposit removal step, wherein the silicon deposit is removed by supplying an etching gas into the reaction zone.
摘要翻译：提供了一种使用流化床反应器连续制备颗粒状多晶硅的方法，通过有效去除积聚在反应器管内壁上的硅沉积物，能够稳定地长期运行反应器。该方法包括：（i）硅颗粒制备步骤，其中在硅颗粒的表面上发生硅沉积，同时硅沉积物堆积在包围反应区的反应器管的内壁上; （ii）硅颗粒部分排出步骤，其中残留在反应器管内的硅颗粒的一部分从流化床反应器中排出，使得硅颗粒的床的高度不超过反应气体的高度出口; 和（iii）硅沉积物去除步骤，其中通过向反应区域中提供蚀刻气体来除去硅沉积物。

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